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1.发明申请Direct patterning method for manufacturing a metal layer of a semiconductor device 审中-公开用于制造半导体器件的金属层的直接图案化方法公开(公告)号：US20070141838A1
公开(公告)日：2007-06-21
申请号：US11441095
申请日：2006-05-26
IPC分类号： H01L21/44
CPC分类号： H01L21/288 , C23C18/1608 , C23C18/1879 , C23C18/42 , H01L21/76838 , H01L27/1292 , H05K3/185
摘要： A direct patterning method for manufacturing a metal layer of a semiconductor device is provided. The claimed method reduces the materials and hours required by prior methods such as the thin film depositing method for a substrate, and the photolithographic method for manufacturing a transistor. The preferred embodiment of the present invention comprises a step of defining the pattern of the seeder material and a step of selectively thin film deposition. The direct patterned technology for the seeder and a chemical bath deposition (CBD) are utilized to provide the thin film growing method with non-vacuum and selective deposition. The object of the invention is applied to produce the wire or electrode, within the semiconductor device, or to deposit and manufacture the thin film in the large-area transistor array or a reflective layer.
摘要翻译： 提供了用于制造半导体器件的金属层的直接图案化方法。 所要求保护的方法减少了诸如用于衬底的薄膜沉积方法等现有方法所需的材料和时间，以及用于制造晶体管的光刻方法。 本发明的优选实施例包括限定播种机材料的图案的步骤和选择性薄膜沉积的步骤。 用于播种机的直接图案化技术和化学浴沉积（CBD）用于提供具有非真空和选择性沉积的薄膜生长方法。 本发明的目的是用于在半导体器件内生产线或电极，或者在大面积晶体管阵列或反射层中沉积和制造薄膜。
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公开(公告)号：US08614444B2
公开(公告)日：2013-12-24
申请号：US13286902
申请日：2011-11-01
申请人： Huang-Chung Cheng , Yu-Chih Huang , Po-Yu Yang , Shin-Chuan Chiang , Huai-An Li
发明人： Huang-Chung Cheng , Yu-Chih Huang , Po-Yu Yang , Shin-Chuan Chiang , Huai-An Li
IPC分类号： H01L29/10
CPC分类号： H01L29/78603 , H01L27/1225 , H01L29/78606 , H01L29/7869
摘要： A top-gate transistor array substrate includes a transparent substrate with a plane, an ion release layer, a pixel array, and a first insulating layer. The ion release layer is disposed on the transparent substrate and completely covers the plane. The pixel array is disposed on the ion release layer and includes a plurality of transistors and a plurality of pixel electrodes. Each of the transistors includes a source, a drain, a gate and a MOS (metal oxide semiconductor) layer. The drain, the source and the MOS layer are disposed on the ion release layer. The pixel electrodes are electrically connected to the drains respectively. The gate is disposed above the MOS layer. The first insulating layer is disposed between the MOS layers and the gates. The MOS layer contacts the ion release layer. The ion release layer can release a plurality of ions into the MOS layers.
摘要翻译： 顶栅晶体管阵列基板包括具有平面的透明基板，离子剥离层，像素阵列和第一绝缘层。 离子剥离层设置在透明基板上并完全覆盖平面。 像素阵列设置在离子剥离层上，并且包括多个晶体管和多个像素电极。 每个晶体管包括源极，漏极，栅极和MOS（金属氧化物半导体）层。 漏极，源极和MOS层设置在离子剥离层上。 像素电极分别与漏极电连接。 栅极设置在MOS层的上方。 第一绝缘层设置在MOS层和栅极之间。 MOS层与离子释放层接触。 离子剥离层可以将多个离子释放到MOS层中。
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公开(公告)号：US07745267B2
公开(公告)日：2010-06-29
申请号：US11614977
申请日：2006-12-22
IPC分类号： H01L21/00
CPC分类号： H01L29/78681 , H01L27/1292 , H01L29/7869
摘要： A manufacturing method of an active layer of a thin film transistor is provided. The method includes following steps. First a substrate is provided, and a semiconductor precursor solution is then prepared through a liquid process. Thereafter, the semiconductor precursor solution is provided on the substrate to form a semiconductor precursor thin film. After that, a light source is used to irradiate the semiconductor precursor thin film to remove residual solvent and allow the semiconductor precursor thin film to produce semiconductor property, so as to form a semiconductor active layer.
摘要翻译： 提供了薄膜晶体管的有源层的制造方法。 该方法包括以下步骤。 首先提供衬底，然后通过液体工艺制备半导体前体溶液。 此后，将半导体前体溶液设置在基板上以形成半导体前体薄膜。 之后，使用光源照射半导体前体薄膜以除去残留的溶剂，并使半导体前体薄膜产生半导体性质，从而形成半导体活性层。
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公开(公告)号：US20100044696A1
公开(公告)日：2010-02-25
申请号：US12607991
申请日：2009-10-28
IPC分类号： H01L51/54 , H01L29/786 , H01L51/30
CPC分类号： H01L29/78681 , H01L27/1292 , H01L29/7869
摘要： A thin film transistor is provided. The thin film transistor includes a substrate, a gate, a source/drain, an insulating layer, and a semiconductor active layer. The gate and the source/drain are respectively deposited on the substrate and are separated by the insulating layer on the substrate. The semiconductor active layer connects the source and the drain. The material of the semiconductor active layer is a semiconductor precursor which produces semiconductor property after being irradiated by a light source. A liquid crystal display which includes the above thin film transistor is also provided.
摘要翻译： 提供薄膜晶体管。 薄膜晶体管包括衬底，栅极，源极/漏极，绝缘层和半导体有源层。 栅极和源极/漏极分别沉积在衬底上并被衬底上的绝缘层分离。 半导体有源层连接源极和漏极。 半导体有源层的材料是在被光源照射之后产生半导体性能的半导体前体。 还提供了一种包括上述薄膜晶体管的液晶显示器。
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公开(公告)号：US20090305473A1
公开(公告)日：2009-12-10
申请号：US12258451
申请日：2008-10-27
IPC分类号： H01L21/336
CPC分类号： H01L29/7869
摘要： A method for fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulating layer is formed on the substrate to cover the gate. A metal oxide material layer is formed on the gate insulating layer. A photoresist layer is formed on the metal oxide material layer, in which a thickness of the photoresist layer above the gate is larger than that of the photoresist layer above two sides adjacent to the gate. A portion of the metal oxide material layer is removed to form a metal oxide active layer by using the photoresist layer as a mask. The photoresist layer above the two sides adjacent to the gate is removed and the remaining photoresist layer covers a portion of the metal oxide active layer. A source and a drain are formed on the metal oxide active layer covered by the photoresist layer.
摘要翻译： 提供一种制造薄膜晶体管的方法。 栅极形成在基板上。 在基板上形成栅极绝缘层以覆盖栅极。 在栅极绝缘层上形成金属氧化物材料层。 在金属氧化物材料层上形成光致抗蚀剂层，其中栅极上方的光致抗蚀剂层的厚度大于与栅极相邻的两侧上方的光致抗蚀剂层的厚度。 通过使用光致抗蚀剂层作为掩模，去除金属氧化物材料层的一部分以形成金属氧化物活性层。 去除与栅极相邻的两侧上方的光致抗蚀剂层，剩余的光致抗蚀剂层覆盖金属氧化物活性层的一部分。 在由光致抗蚀剂层覆盖的金属氧化物有源层上形成源极和漏极。
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6.发明申请THIN FILM TRANSISTOR, METHOD OF FABRICATING ACTIVE LAYER THEREOF, AND LIQUID CRYSTAL DISPLAY 有权薄膜晶体管，其活性层的制备方法和液晶显示公开(公告)号：US20080057631A1
公开(公告)日：2008-03-06
申请号：US11614977
申请日：2006-12-22
IPC分类号： H01L21/84
CPC分类号： H01L29/78681 , H01L27/1292 , H01L29/7869
摘要： A manufacturing method of an active layer of a thin film transistor is provided. The method includes following steps. First a substrate is provided, and a semiconductor precursor solution is then prepared through a liquid process. Thereafter, the semiconductor precursor solution is provided on the substrate to form a semiconductor precursor thin film. After that, a light source is used to irradiate the semiconductor precursor thin film to remove residual solvent and allow the semiconductor precursor thin film to produce semiconductor property, so as to form a semiconductor active layer.
摘要翻译： 提供了薄膜晶体管的有源层的制造方法。 该方法包括以下步骤。 首先提供衬底，然后通过液体工艺制备半导体前体溶液。 此后，将半导体前体溶液设置在基板上以形成半导体前体薄膜。 之后，使用光源照射半导体前体薄膜以除去残留的溶剂，并使半导体前体薄膜产生半导体性质，从而形成半导体活性层。
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公开(公告)号：US20120231588A1
公开(公告)日：2012-09-13
申请号：US13117130
申请日：2011-05-26
申请人： Shin-Chuan Chiang , Yu-Hao Lai , Huai-An Li
发明人： Shin-Chuan Chiang , Yu-Hao Lai , Huai-An Li
IPC分类号： H01L21/336
CPC分类号： H01L29/7869
摘要： A manufacturing method of thin film transistors is provided. The manufacturing method includes: providing a substrate; forming a gate electrode; forming a gate insulating layer; forming a patterned oxide semiconductor layer; forming a source electrode and a drain electrode; and executing a localized laser treatment. A laser beam is used to irradiate at least a part of the patterned oxide semiconductor layer in the localized laser treatment. An electrical resistitivity of the patterned oxide semiconductor layer irradiated by the laser beam is lower than an electrical resistitivity of the patterned oxide semiconductor layer without being irradiated by the laser beam.
摘要翻译： 提供薄膜晶体管的制造方法。 该制造方法包括：提供基板; 形成栅电极; 形成栅极绝缘层; 形成图案化氧化物半导体层; 形成源电极和漏电极; 并执行局部激光治疗。 在局部激光处理中使用激光束照射图案化的氧化物半导体层的至少一部分。 由激光束照射的图案化氧化物半导体层的电阻率低于图案化氧化物半导体层的电阻率而不被激光束照射。
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公开(公告)号：US08222095B2
公开(公告)日：2012-07-17
申请号：US12258451
申请日：2008-10-27
IPC分类号： H01L21/00
CPC分类号： H01L29/7869
摘要： A method for fabricating a thin film transistor is provided. A gate is formed on a substrate. A gate insulating layer is formed on the substrate to cover the gate. A metal oxide material layer is formed on the gate insulating layer. A photoresist layer is formed on the metal oxide material layer, in which a thickness of the photoresist layer above the gate is larger than that of the photoresist layer above two sides adjacent to the gate. A portion of the metal oxide material layer is removed to form a metal oxide active layer by using the photoresist layer as a mask. The photoresist layer above the two sides adjacent to the gate is removed and the remaining photoresist layer covers a portion of the metal oxide active layer. A source and a drain are formed on the metal oxide active layer covered by the photoresist layer.
摘要翻译： 提供一种制造薄膜晶体管的方法。 栅极形成在基板上。 在基板上形成栅极绝缘层以覆盖栅极。 在栅极绝缘层上形成金属氧化物材料层。 在金属氧化物材料层上形成光致抗蚀剂层，其中栅极上方的光致抗蚀剂层的厚度大于与栅极相邻的两侧上方的光致抗蚀剂层的厚度。 通过使用光致抗蚀剂层作为掩模，去除金属氧化物材料层的一部分以形成金属氧化物活性层。 去除与栅极相邻的两侧上方的光致抗蚀剂层，剩余的光致抗蚀剂层覆盖金属氧化物活性层的一部分。 在由光致抗蚀剂层覆盖的金属氧化物有源层上形成源极和漏极。
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公开(公告)号：US20130009144A1
公开(公告)日：2013-01-10
申请号：US13286902
申请日：2011-11-01
申请人： Huang-Chung CHENG , Yu-Chih HUANG , Po-Yu YANG , Shin-Chuan CHIANG , Huai-An LI
发明人： Huang-Chung CHENG , Yu-Chih HUANG , Po-Yu YANG , Shin-Chuan CHIANG , Huai-An LI
IPC分类号： H01L29/24
CPC分类号： H01L29/78603 , H01L27/1225 , H01L29/78606 , H01L29/7869
摘要： A top-gate transistor array substrate includes a transparent substrate with a plane, an ion release layer, a pixel array, and a first insulating layer. The ion release layer is disposed on the transparent substrate and completely covers the plane. The pixel array is disposed on the ion release layer and includes a plurality of transistors and a plurality of pixel electrodes. Each of the transistors includes a source, a drain, a gate and a MOS (metal oxide semiconductor) layer. The drain, the source and the MOS layer are disposed on the ion release layer. The pixel electrodes are electrically connected to the drains respectively. The gate is disposed above the MOS layer. The first insulating layer is disposed between the MOS layers and the gates. The MOS layer contacts the ion release layer. The ion release layer can release a plurality of ions into the MOS layers.
摘要翻译： 顶栅晶体管阵列基板包括具有平面的透明基板，离子剥离层，像素阵列和第一绝缘层。 离子剥离层设置在透明基板上并完全覆盖平面。 像素阵列设置在离子剥离层上，并且包括多个晶体管和多个像素电极。 每个晶体管包括源极，漏极，栅极和MOS（金属氧化物半导体）层。 漏极，源极和MOS层设置在离子剥离层上。 像素电极分别与漏极电连接。 栅极设置在MOS层的上方。 第一绝缘层设置在MOS层和栅极之间。 MOS层与离子释放层接触。 离子剥离层可以将多个离子释放到MOS层中。
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10.发明授权Thin film transistor with semiconductor precursor and liquid crystal display having the same 有权具有半导体前体的薄膜晶体管和具有相同的液晶显示器公开(公告)号：US08106389B2
公开(公告)日：2012-01-31
申请号：US12607991
申请日：2009-10-28
IPC分类号： H01L29/12
CPC分类号： H01L29/78681 , H01L27/1292 , H01L29/7869
摘要： A thin film transistor is provided. The thin film transistor includes a substrate, a gate, a source/drain, an insulating layer, and a semiconductor active layer. The gate and the source/drain are respectively deposited on the substrate and are separated by the insulating layer on the substrate. The semiconductor active layer connects the source and the drain. The material of the semiconductor active layer is a semiconductor precursor which produces semiconductor property after being irradiated by a light source. A liquid crystal display which includes the above thin film transistor is also provided.
摘要翻译： 提供薄膜晶体管。 薄膜晶体管包括衬底，栅极，源极/漏极，绝缘层和半导体有源层。 栅极和源极/漏极分别沉积在衬底上并被衬底上的绝缘层分离。 半导体有源层连接源极和漏极。 半导体有源层的材料是在被光源照射之后产生半导体性能的半导体前体。 还提供了一种包括上述薄膜晶体管的液晶显示器。
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