公开(公告)号：US08307449B2

公开(公告)日：2012-11-06

申请号：US12021479

申请日：2008-01-29

申请人： Hiroyuki Kimura ,  Yoichi Takaragi ,  Tsutomu Murayama ,  Kunio Yoshihara ,  Shinichi Fukada ,  Tatsuo Shinagawa

发明人： Hiroyuki Kimura ,  Yoichi Takaragi ,  Tsutomu Murayama ,  Kunio Yoshihara ,  Shinichi Fukada ,  Tatsuo Shinagawa

IPC分类号： G06F21/00

CPC分类号： H04N1/32128 ,  H04N1/00856 ,  H04N1/00957 ,  H04N2201/3246 ,  H04N2201/3247 ,  H04N2201/3277

摘要： An image processing apparatus which is capable of managing security information on electronic documents before and after merging at a low cost. A CPU circuit causes input electronic documents with attribute information added thereto to be stored in a HDD. The CPU circuit causes selected ones of the electronic documents to be merged while updating attribute information on the merged electronic document.

摘要翻译： 一种图像处理装置，其能够以低成本在合并之前和之后管理电子文档的安全信息。 CPU电路使具有添加有属性信息的输入电子文档存储在HDD中。 在更新合并的电子文档上的属性信息的同时，CPU电路使所选择的电子文档合并。

公开(公告)号：US08034715B2

公开(公告)日：2011-10-11

申请号：US12492276

申请日：2009-06-26

申请人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

发明人： Shinji Nishihara ,  Shuji Ikeda ,  Naotaka Hashimoto ,  Hiroshi Momiji ,  Hiromi Abe ,  Shinichi Fukada ,  Masayuki Suzuki

IPC分类号： H01L21/44 ,  H01L21/8238

CPC分类号： H01L21/823814 ,  C23C14/16 ,  C23C14/3414 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/31608 ,  H01L21/76229 ,  H01L21/76828 ,  H01L21/823835 ,  H01L21/823842 ,  H01L21/823871 ,  H01L23/53223 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

摘要： A Co silicide layer having a low resistance and a small junction leakage current is formed on the surface of the gate electrode, source and drain of MOSFETS by silicidizing a Co film deposited on a main plane of a wafer by sputtering using a high purity Co target having a Co purity of at least 99.99% and Fe and Ni contents of not greater than 10 ppm, preferably having a Co purity of 99.999%.

摘要翻译： 在MOSFET的栅电极，源极和漏极的表面上形成具有低电阻和小的漏电流的Co硅化物层，通过使用高纯度Co靶溅射沉积在晶片的主平面上的Co膜， Co纯度至少为99.99％，Fe和Ni含量不大于10ppm，Co的纯度优选为99.999％。

公开(公告)号：US07920291B2

公开(公告)日：2011-04-05

申请号：US11441891

申请日：2006-05-26

申请人： Shinichi Fukada ,  Akio Suzuki

发明人： Shinichi Fukada ,  Akio Suzuki

IPC分类号： G06K15/00

CPC分类号： H04N1/46

摘要： An image processing apparatus includes a comparison unit adapted to compare a color of a first master page and a color of an edge area of an object in a variable page, and a change unit adapted to, when the color difference between the first master page and the edge area of the object is equal to or less than a predetermined threshold value, change the first master page to a second master page having a color that is not similar to the color of the object.

摘要翻译： 一种图像处理装置，包括：比较单元，用于比较第一母版的颜色和可变页中的对象的边缘区域的颜色;以及改变单元，适于当第一母版页和第 对象的边缘区域等于或小于预定阈值，将第一母版页更改为具有与对象的颜色不相似的颜色的第二母版页。

公开(公告)号：US07663906B2

公开(公告)日：2010-02-16

申请号：US11865095

申请日：2007-10-01

申请人： Shinichi Fukada

发明人： Shinichi Fukada

IPC分类号： G11C11/22

CPC分类号： G11C11/22 ,  G11C7/24

摘要： A semiconductor memory device includes: a memory section; and a control section that controls writing and reading of data with respect to the memory section, wherein the memory section includes a first memory region formed from nonvolatile memory cells, each of the memory cells storing binary data corresponding to a first polarization state and a second polarization state; and the control section controls, for all of the memory cells included in the first memory region, such that, before writing data to each of the memory cells based on new data externally inputted, the memory cell is polarized in the first polarization state, and then the memory cell is further polarized in the second polarization state.

摘要翻译： 半导体存储器件包括：存储器部分; 以及控制部分，其控制相对于存储器部分的数据的写入和读取，其中存储器部分包括由非易失性存储器单元形成的第一存储器区域，每个存储器单元存储对应于第一偏振态的二进制数据和第二存储器单元 极化状态; 并且所述控制部对于包含在所述第一存储区域中的所有存储单元进行控制，使得在基于从外部输入的新数据向所述存储单元写入数据之前，所述存储单元在所述第一偏振状态下极化， 那么存储单元在第二偏振状态下被进一步极化。

公开(公告)号：US20100025747A1

公开(公告)日：2010-02-04

申请号：US12487104

申请日：2009-06-18

申请人： Shinichi FUKADA

发明人： Shinichi FUKADA

IPC分类号： H01L29/00 ,  H01L21/00

CPC分类号： H01L27/11507 ,  G11C11/22 ,  G11C11/221

摘要： A method for initializing a ferroelectric memory device is provided. The method includes the steps of: packaging a ferroelectric memory device having memory cells arranged in an array, each of the memory cells having a ferroelectric film disposed between a lower electrode and an upper electrode; applying a potential between the lower electrode and the upper electrode in an examination step; and after the examination step, applying a first potential to the upper electrode and applying a second voltage higher than the first potential to the lower electrode, and thereafter conducting a heat treatment at a first temperature higher than an operation guarantee temperature.

摘要翻译： 提供了一种用于初始化铁电存储器件的方法。 该方法包括以下步骤：封装具有以阵列布置的存储单元的铁电存储器件，每个存储单元具有设置在下电极和上电极之间的铁电膜; 在检查步骤中在下电极和上电极之间施加电位; 并且在检查步骤之后，向上部电极施加第一电位并向下部电极施加高于第一电位的第二电压，然后在高于操作保证温度的第一温度下进行热处理。

公开(公告)号：US20100000859A1

公开(公告)日：2010-01-07

申请号：US12495056

申请日：2009-06-30

申请人： Shinichi FUKADA

发明人： Shinichi FUKADA

IPC分类号： C23C14/34

CPC分类号： C23C14/226 ,  C23C14/352

摘要： A sputtering apparatus includes: a film forming chamber housing a substrate, and a sputtered particle ejecting section ejecting a sputtered particle from a pair of targets facing each other with a plasma generation region between the targets. In the device, the sputtered particle ejecting section includes an electron capture unit that is disposed opposite to the film forming chamber and captures an electron in the plasma generation region, and a sputtered particle attach section that is disposed adjacent to the film forming chamber and attaches the particle.

摘要翻译： 溅射装置包括：容纳基板的成膜室和溅射粒子喷射部分，其在靶之间具有等离子体产生区域，将溅射的颗粒从相互面对的一对靶排出。 在该器件中，溅射粒子喷射部分包括与成膜室相对设置并捕获等离子体产生区域中的电子的电子捕获单元和与成膜室相邻设置的溅射颗粒附着部分 颗粒。

公开(公告)号：US20090297025A1

公开(公告)日：2009-12-03

申请号：US12464493

申请日：2009-05-12

申请人： Tsutomu Murayama ,  Kunio Yoshihara ,  Hiroyuki Kimura ,  Shinichi Fukada ,  Mineko Sato ,  Nobushige Nomura ,  Makoto Fukumizu ,  Hirotsugu Matsumoto

发明人： Tsutomu Murayama ,  Kunio Yoshihara ,  Hiroyuki Kimura ,  Shinichi Fukada ,  Mineko Sato ,  Nobushige Nomura ,  Makoto Fukumizu ,  Hirotsugu Matsumoto

IPC分类号： G06K9/00 ,  G06K9/34

CPC分类号： H04N1/60

摘要： An image processing device corrects brightness/hue in appearance of an object of interest while suppressing an effect of an optical illusion even if the object of interest is overlapped with a background part of any color. The image processing device includes an evaluation device that evaluates a record value of the object of interest and the background part thereof, a device that corrects the record value of the object of interest in order to correct the optical illusion of a human being according to a result of evaluation by the evaluation device, and a device that performs record with the record value after the correction.

摘要翻译： 即使感兴趣的对象与任何颜色的背景部分重叠，图像处理装置在抑制视觉错觉的效果的同时校正感兴趣对象的外观上的亮度/色调。 图像处理装置包括评估感兴趣对象的记录值及其背景部分的评估装置，修正感兴趣对象的记录值的装置，以便根据对象的错觉来校正人的视觉错觉 由评估装置评价的结果，以及在修正后执行具有记录值的记录的装置。

公开(公告)号：US07507662B2

公开(公告)日：2009-03-24

申请号：US11468962

申请日：2006-08-31

申请人： Shinichi Fukada

发明人： Shinichi Fukada

IPC分类号： H01L21/44

CPC分类号： H01L27/11507 ,  H01L21/76807 ,  H01L21/76816 ,  H01L27/11502 ,  H01L28/55 ,  H01L28/65

摘要： A ferroelectric memory includes a substrate, an interlayer dielectric layer composed of at least one layer formed above the substrate, a plurality of ferroelectric capacitors formed above the interlayer dielectric layer, a coating layer that covers the plurality of ferroelectric capacitors, a first opening section provided between the plurality of ferroelectric capacitors, a second opening section that is connected to the first opening section and formed in the coating layer and the interlayer dielectric layer, and a conductive layer provided in one piece inside the first opening section and the second opening section.

摘要翻译： 铁电存储器包括基板，由在基板上形成的至少一层构成的层间电介质层，形成在层间电介质层上方的多个铁电电容器，覆盖多个铁电电容器的涂层，设置有第一开口部 在所述多个强电介质电容器之间，与所述第一开口部连接并形成在所述涂层和所述层间绝缘膜中的第二开口部以及设置在所述第一开口部和所述第二开口部内的一体的导电层。

公开(公告)号：US20090066529A1

公开(公告)日：2009-03-12

申请号：US12185227

申请日：2008-08-04

申请人： Shinichi FUKADA

发明人： Shinichi FUKADA

IPC分类号： G08B21/00

CPC分类号： G01R31/3648 ,  G01R31/371

摘要： A remaining battery level management system includes a battery-driven measurement device and a data collection server device. The measurement device includes: a communication data generation section that generates communication data to be transmitted to the data collection server device based on the measured value; and a wireless transmission section that transmits the communication data via wireless communication; and the data collection server device includes: a wireless reception section that receives the communication data transmitted from the measurement device via wireless communication; a remaining battery level calculation section that calculates a remaining battery level of the measurement device based on the received communication data; and an alarm output section that outputs an alarm about the remaining battery level of the measurement device based on a remaining battery level calculation result.

摘要翻译： 剩余的电池电量管理系统包括电池驱动测量装置和数据收集服务器装置。 测量装置包括：通信数据生成部，其基于测量值生成要发送到数据收集服务器装置的通信数据; 以及无线发送部，其经由无线通信发送所述通信数据; 数据收集服务器装置包括：无线接收部，其经由无线通信接收从测量装置发送的通信数据; 剩余电池电平计算部，其基于所接收的通信数据计算所述测量装置的剩余电池电平; 以及报警输出部，其基于剩余电池电平计算结果输出关于测量装置的剩余电池电平的警报。

公开(公告)号：US20080145954A1

公开(公告)日：2008-06-19

申请号：US11998177

申请日：2007-11-28

申请人： Shinichi Fukada ,  Naoya Sashida

发明人： Shinichi Fukada ,  Naoya Sashida

IPC分类号： H01L21/02

CPC分类号： H01L28/65 ,  H01L27/11502 ,  H01L27/11507 ,  H01L28/57

摘要： A manufacturing method for a ferroelectric memory device includes: forming a ferroelectric capacitor on a substrate, the ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode; forming a first hydrogen barrier film that covers the ferroelectric capacitor by a chemical vapor deposition method; forming a dielectric film on the first hydrogen barrier film; forming a sidewall composed of the dielectric film on a side of the ferroelectric capacitor by etching back the dielectric film; forming a second hydrogen barrier film on the first hydrogen barrier film and the sidewall by a chemical vapor deposition method; and forming an interlayer dielectric film on the second hydrogen barrier film.

摘要翻译： 铁电存储器件的制造方法包括：在基板上形成铁电电容器，所述强电介质电容器包括下电极，铁电体膜和上电极; 通过化学气相沉积法形成覆盖铁电电容器的第一氢阻挡膜; 在第一氢阻挡膜上形成电介质膜; 通过蚀刻所述电介质膜，在所述强电介质电容器一侧上形成由所述电介质膜构成的侧壁; 通过化学气相沉积法在第一氢阻挡膜和侧壁上形成第二氢阻挡膜; 以及在所述第二氢阻挡膜上形成层间电介质膜。