公开(公告)号：US09792197B2

公开(公告)日：2017-10-17

申请号：US14905444

申请日：2013-08-01

申请人： Shinichi Ishida ,  Tsutomu Matsuzaki ,  I-SYSTEM CO., LTD.

发明人： Shinichi Ishida

IPC分类号： G06F9/44 ,  G06F9/45 ,  G06F11/36

CPC分类号： G06F11/362 ,  G06F8/31 ,  G06F8/70 ,  G06F8/75

摘要： This apparatus is provided with a storage device and a CPU. The storage device has two or more modules stored therein. The CPU acquires, from the storage device, a first module and a second module from among the modules stored in the storage device. Furthermore, the CPU creates a message that indicates whether a hierarchical structure of the first module matches a hierarchical structure of the second module.

公开(公告)号：US20160162384A1

公开(公告)日：2016-06-09

申请号：US14905444

申请日：2013-08-01

申请人： Shinichi ISHIDA ,  Tsutomu MATSUZAKI ,  I-SYSTEM CO., LTD.

发明人： Shinichi SHIDA

IPC分类号： G06F11/36 ,  G06F9/44

CPC分类号： G06F11/362 ,  G06F8/31 ,  G06F8/70 ,  G06F8/75

摘要： This apparatus is provided with a storage means and a comparison means. The storage means has two or more modules stored therein. The comparison means acquires, from the storage means, a first module and a second module from among the modules stored in the storage means. Furthermore, the comparison means creates a message that indicates whether a hierarchical structure of the first module matches a hierarchical structure of the second module.

摘要翻译： 该装置具有存储装置和比较装置。 存储装置具有存储在其中的两个或多个模块。 比较装置从存储装置中从存储在存储装置中的模块中获取第一模块和第二模块。 此外，比较装置创建指示第一模块的层次结构是否匹配第二模块的层次结构的消息。

公开(公告)号：US20150128109A1

公开(公告)日：2015-05-07

申请号：US14391377

申请日：2013-04-05

申请人： Shinichi ISHIDA ,  Tsutomu MATSUZAKI ,  I-SYSTEM CO., LTD.

发明人： Shinichi Ishida

IPC分类号： G06F9/44

CPC分类号： G06F8/75 ,  G06F11/3604

摘要： A structure analysis device comprises a storage means wherein modules are stored, and an analysis means for carrying out a structural analysis of a prescribed subject module of the modules which are stored in the storage means. If a hierarchical structure of a first subject range and a hierarchical structure of a second subject range of the subject module are the same, the analysis means creates similarity notification information in association with the first subject range and/or the second subject range. The first subject range and the second subject range are respectively different subject ranges of the subject ranges of the subject modules which are acquired from the storage means. The similarity notification information denotes that respectively similar subject ranges are present in the subject module.

摘要翻译： 结构分析装置包括存储模块的存储装置和用于对存储在存储装置中的模块的规定主体模块进行结构分析的分析装置。 如果对象模块的第一对象范围和第二对象范围的分层结构的分层结构相同，则分析装置与第一对象范围和/或第二对象范围相关联地创建相似性通知信息。 第一被摄体范围和第二被摄体范围分别是从存储装置获取的被摄体模块的被摄体范围的不同的被摄体范围。 相似性通知信息表示在对象模块中存在相应的相似的对象范围。

公开(公告)号：US20140196009A1

公开(公告)日：2014-07-10

申请号：US14235040

申请日：2012-07-10

申请人： Shinichi Ishida

发明人： Shinichi Ishida

IPC分类号： G06F9/44

CPC分类号： G06F8/75 ,  G06F8/51

摘要： A device supporting the structural analysis of a module comprises: a storage means storing at least one module; and a conversion means that converts a prescribed target module among the modules stored by the storage means to a secondary module and stores same in the storage means. The conversion means reads the target module from the storage means and sequentially outputs to the secondary module each sentence written from a prescribed processing start location in the target module to a prescribed processing end location. The conversion means also recursively develops a sentence written in processing units etc., for execution, and outputs same to the secondary module, when the sentence is a module internal processing unit or a sentence that executes another module.

摘要翻译： 支持模块的结构分析的装置包括：存储装置，存储至少一个模块; 以及将由存储装置存储的模块中的规定目标模块转换为二次模块并将其存储在存储装置中的转换装置。 转换装置从存储装置读取目标模块，并且将从目标模块中的规定处理开始位置写入的每个句子顺序输出到辅助模块到规定的处理结束位置。 转换装置还递归地生成以处理单元等编写的用于执行的句子，并且当句子是模块内部处理单元或执行另一个模块的句子时，将其输出到次级模块。

公开(公告)号：US20090058050A1

公开(公告)日：2009-03-05

申请号：US12230347

申请日：2008-08-28

申请人： Ikuo Yamada ,  Shinichi Ishida ,  Yasushi Okada ,  Tsuyoshi Furuno

发明人： Ikuo Yamada ,  Shinichi Ishida ,  Yasushi Okada ,  Tsuyoshi Furuno

IPC分类号： B60R21/215

CPC分类号： B60R21/231 ,  B60R21/2346 ,  B60R21/239 ,  B60R2021/23324

摘要： An airbag for a front passenger's seat includes a left outer panel, right outer panel, left inner panel and right inner panel. The left and right outer panels are prepared as laterally symmetrical separate entities. Each of the left and right inner panels includes at the upper front end at full inflation a crossing edge that extends in a transverse direction on the airbag at full inflation. Each of the left and right outer panels includes at the upper periphery a central extended region that includes a joint edge for joint with the crossing edge of each of the inner panels. The central extended regions of the left and right outer panels are coupled together at their circumferences except the joint edges.

摘要翻译： 用于前乘客座椅的气囊包括左外板，右外板，左内板和右内板。 左右外板准备为横向对称的独立实体。 左和右内板中的每一个在完全充气的上前端包括在充气充气时在气囊上沿横向方向延伸的交叉边缘。 左和右外板中的每一个在上周边包括一个中心延伸区域，该中心延伸区域包括用于与每个内板的交叉边缘接合的接合边缘。 左右外板的中心延伸区域除了接头边缘之外围绕其周边连接在一起。

公开(公告)号：US06780757B2

公开(公告)日：2004-08-24

申请号：US10430402

申请日：2003-05-07

申请人： Masayuki Suzuki ,  Shinji Nishihara ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Sonoko Tohda ,  Hiroyuki Uchiyama ,  Hideaki Tsugane ,  Yoshiaki Yoshiura

发明人： Masayuki Suzuki ,  Shinji Nishihara ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Sonoko Tohda ,  Hiroyuki Uchiyama ,  Hideaki Tsugane ,  Yoshiaki Yoshiura

IPC分类号： H01L214763

CPC分类号： H01L21/76862 ,  H01L21/32051 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/7685 ,  H01L23/53223 ,  H01L23/53266 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/01007 ,  H01L2924/04953 ,  H01L2924/00

摘要： A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.

摘要翻译： 一种制造半导体集成电路器件的方法包括以下步骤：（a）在具有多个通孔的绝缘膜上沉积由氮化钛制成的第一底层膜; （b）在第一底层膜上沉积钨膜，并通过含氟等离子体将钨膜回蚀刻，从而将钨膜留在连接孔中; （c）溅射蚀刻第一底层膜的表面以从第一底层膜的表面除去氟; 和（d）在第一底层膜上形成铝膜。 还描述了通过该方法获得的半导体集成电路器件。

公开(公告)号：US06538329B2

公开(公告)日：2003-03-25

申请号：US09933163

申请日：2001-08-21

申请人： Masayuki Suzuki ,  Shinji Nishihara ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Sonoko Tohda ,  Hiroyuki Uchiyama ,  Hideaki Tsugane ,  Yoshiaki Yoshiura

发明人： Masayuki Suzuki ,  Shinji Nishihara ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Sonoko Tohda ,  Hiroyuki Uchiyama ,  Hideaki Tsugane ,  Yoshiaki Yoshiura

IPC分类号： H01L2348

CPC分类号： H01L21/76862 ,  H01L21/32051 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/7685 ,  H01L23/53223 ,  H01L23/53266 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05624 ,  H01L2224/13099 ,  H01L2224/45144 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/00014 ,  H01L2924/01007 ,  H01L2924/04953 ,  H01L2924/00

摘要： A method for making a semiconductor integrated circuit device comprises the steps of: (a) depositing a first underlying film made of titanium nitride, on an insulating film having a plurality of through-holes; (b) depositing a tungsten film on the first underlying film, and etching the tungsten film back by means of a fluorine-containing plasma thereby leaving the tungsten film only in the connection holes; (c) sputter etching the surface of the first underlying film to remove the fluorine from the surface of the first underlying film; and (d) forming an aluminum film on the first underlying film. The semiconductor integrated circuit device obtained by the method is also described.

公开(公告)号：US06503803B2

公开(公告)日：2003-01-07

申请号：US09766645

申请日：2001-01-23

申请人： Hiromi Todorobaru ,  Hideo Miura ,  Masayuki Suzuki ,  Shinji Nishihara ,  Shuji Ikeda ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Atushi Ogishima ,  Hiroyuki Uchiyama ,  Sonoko Abe

发明人： Hiromi Todorobaru ,  Hideo Miura ,  Masayuki Suzuki ,  Shinji Nishihara ,  Shuji Ikeda ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Atushi Ogishima ,  Hiroyuki Uchiyama ,  Sonoko Abe

IPC分类号： H01L21336

CPC分类号： H01L29/7845 ,  H01L23/485 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a method of fabricating a semiconductor device including forming an insulating film on a silicon substrate; forming a contact hole in the insulating film; depositing a titanium film to be in contact with the silicon substrate in the contact hole; and causing a heat reaction between the titanium film and the silicon substrate such that the titanium film is subjected to silicide reaction with the thickness 4 nm to 48 nm or, more preferably, with the thickness of 8 nm to 34 nm. In the instance where the contact hole is filled with doped polycrystal silicon material, the titanium film is deposited to be in contact with the polycrystal silicon in the contact hole. The silicon substrate/silicon body may have at least a MISFET formed thereon in which case the contact hole is formed to expose an active region of the MISFET, as one example.

摘要翻译： 公开了一种制造半导体器件的方法，包括在硅衬底上形成绝缘膜; 在绝缘膜上形成接触孔; 在接触孔中沉积与硅衬底接触的钛膜; 并且在钛膜和硅衬底之间引起热反应，使得钛膜以4nm至48nm的厚度进行硅化物反应，更优选地，以8nm至34nm的厚度进行硅化物反应。 在接触孔填充掺杂的多晶硅材料的情况下，沉积钛膜以与接触孔中的多晶硅接触。 作为一个示例，硅衬底/硅体可以具有至少形成在其上的MISFET，在这种情况下，形成接触孔以暴露MISFET的有源区。

公开(公告)号：US06268658B1

公开(公告)日：2001-07-31

申请号：US09500242

申请日：2000-02-08

申请人： Hiromi Todorobaru ,  Hideo Miura ,  Masayuki Suzuki ,  Shinji Nishihara ,  Shuji Ikeda ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Atushi Ogishima ,  Hiroyuki Uchiyama ,  Sonoko Abe

发明人： Hiromi Todorobaru ,  Hideo Miura ,  Masayuki Suzuki ,  Shinji Nishihara ,  Shuji Ikeda ,  Masashi Sahara ,  Shinichi Ishida ,  Hiromi Abe ,  Atushi Ogishima ,  Hiroyuki Uchiyama ,  Sonoko Abe

IPC分类号： H01L2348

CPC分类号： H01L29/7845 ,  H01L23/485 ,  H01L23/5226 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device comprises a silicon substrate, an electrical wiring metal, an insulating film formed on the silicon substrate, a plurality of contact holes formed in the insulating film for connecting the silicon substrate and the electrical wiring metal to each other, and a titanium silicide film formed in the contact holes. The thickness of the titanium silicide film is 10 nm to 120 nm or, preferably, 20 nm to 84 nm. Semiconductor regions and the electrical wiring metal are connected to each other through the titanium silicide film.

摘要翻译： 半导体器件包括硅衬底，电布线金属，形成在硅衬底上的绝缘膜，形成在用于将硅衬底和电布线金属彼此连接的绝缘膜中的多个接触孔，以及硅化钛 膜在接触孔中形成。 硅化钛膜的厚度为10nm〜120nm，优选为20nm〜84nm。 半导体区域和电布线金属通过硅化钛膜彼此连接。

公开(公告)号：US5408336A

公开(公告)日：1995-04-18

申请号：US823474

申请日：1992-01-22

申请人： Shinichi Ishida

发明人： Shinichi Ishida

IPC分类号： H04N1/387 ,  G06T5/30 ,  H04N1/409 ,  H04N1/40

CPC分类号： H04N1/409

摘要： There is disclosed an image processing apparatus capable of smoothing the image in obtaining a binary image, by eliminating notches through comparison of the input image data with certain notch image patterns stored in the apparatus in advance. In order to maintain an effect of smoothing even when the resolution of the input image data is increased, the image patterns employed for the above-mentioned comparison are varied according to the resolution of the input image data.

摘要翻译： 公开了一种图像处理装置，其能够通过将输入图像数据与预先存储在装置中的某些凹口图像图案进行比较来消除凹陷来消除获得二值图像的图像。 即使输入图像数据的分辨率增加，为了保持平滑的效果，用于上述比较的图像图案根据输入图像数据的分辨率而变化。