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公开(公告)号：US09105810B2
公开(公告)日：2015-08-11
申请号：US13404607
申请日：2012-02-24
申请人： Toshihide Ito , Hiroshi Katsuno , Shinya Nunoue
发明人： Toshihide Ito , Hiroshi Katsuno , Shinya Nunoue
CPC分类号： H01L33/32 , H01L33/0075 , H01L33/405 , H01L33/44 , H01L2933/0016 , H01L2933/0025
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting unit, a second semiconductor layer, a reflecting electrode, an oxide layer and a nitrogen-containing layer. The first semiconductor layer is of a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and is of a second conductivity type. The reflecting electrode is provided on the second semiconductor layer and includes Ag. The oxide layer is provided on the reflecting electrode. The oxide layer is insulative and has a first opening. The nitrogen-containing layer is provided on the oxide layer. The nitrogen-containing layer is insulative and has a second opening communicating with the first opening.
摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，发光单元，第二半导体层，反射电极，氧化物层和含氮层。 第一半导体层是第一导电类型。 发光单元设置在第一半导体层上。 第二半导体层设置在发光单元上并且是第二导电类型。 反射电极设置在第二半导体层上并且包括Ag。 氧化物层设置在反射电极上。 氧化物层是绝缘的并且具有第一开口。 含氧层设置在氧化物层上。 含氮层是绝缘的，并且具有与第一开口连通的第二开口。
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公开(公告)号：US09065003B2
公开(公告)日：2015-06-23
申请号：US13405509
申请日：2012-02-27
申请人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
发明人： Hisashi Yoshida , Koichi Tachibana , Tomonari Shioda , Toshiki Hikosaka , Jongil Hwang , Hung Hung , Naoharu Sugiyama , Shinya Nunoue
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.
摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层， 发出峰值波长为440纳米以上的光。 对第一半导体层施加拉伸应变。 第一半导体层的边缘位错密度为5×10 9 / cm 2以下。 第一半导体层和发光层之间的晶格失配因子为0.11％以下。
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公开(公告)号：US09048362B2
公开(公告)日：2015-06-02
申请号：US13405565
申请日：2012-02-27
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/12 , H01L33/32 , H01S5/3408 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containing III group elements, and a well layer stacked with the barrier layer and containing III group elements. The barrier layer is divided into a first portion on an n-type semiconductor layer side and a second portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the second portion is lower than that of the first portion. The well layer is divided into a third portion on an n-type semiconductor layer side and a fourth portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the fourth portion is higher than that of the third portion.
摘要翻译： 根据一个实施例，半导体发光器件包括含有氮化物半导体和发光层的n型和p型半导体层。 发光层包括含有III族元素的阻挡层，以及与阻挡层堆叠并含有III族元素的阱层。 阻挡层被分为n型半导体层侧的第一部分和p型半导体层侧的第二部分，第二部分的III族元素中的In组成比低于第一部分 一部分。 阱层被分为n型半导体层侧的第三部分和p型半导体层侧的第四部分，第四部分的III族元素中的In组成比高于第三部分的第三部分 一部分。
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4.发明授权Semiconductor light emitting device, wafer, and method for manufacturing nitride semiconductor crystal layer 有权半导体发光器件，晶片，以及氮化物半导体晶体层的制造方法公开(公告)号：US08952401B2
公开(公告)日：2015-02-10
申请号：US13220059
申请日：2011-08-29
申请人： Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
发明人： Naoharu Sugiyama , Taisuke Sato , Hiroshi Ono , Satoshi Mitsugi , Tomonari Shioda , Jongil Hwang , Hung Hung , Shinya Nunoue
CPC分类号： H01L33/58 , H01L21/02381 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02576 , H01L21/02631 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L33/08 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/36 , H01L33/405 , H01L33/42 , H01L33/44
摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer.
摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，发光层，第二半导体层和低折射率层。 第一半导体层具有与第一主表面相对的第一主表面和第二主表面。 发光层具有设置在第二主表面上的有源层。 第二半导体层设置在发光层上。 低折射率层部分地覆盖第一主表面，并且折射率低于第一半导体层的折射率。
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公开(公告)号：US08895956B2
公开(公告)日：2014-11-25
申请号：US13218827
申请日：2011-08-26
申请人： Shigeya Kimura , Koichi Tachibana , Hajime Nago , Shinya Nunoue
发明人： Shigeya Kimura , Koichi Tachibana , Hajime Nago , Shinya Nunoue
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type first semiconductor layer, a p-type second semiconductor layer and a light emitting layer. The light emitting layer is provided between the first and second semiconductor layers, and includes a plurality of barrier layers including a nitride semiconductor and a well layer provided between the barrier layers and including a nitride semiconductor containing In. The barrier layers and the well layer are stacked in a first direction from the second semiconductor layer toward the first semiconductor layer. The well layer has a p-side interface part and an n-side interface part. Each of the p-side and the n-side interface part include an interface with one of the barrier layers. A variation in a concentration of In in a surface perpendicular to the first direction of the p-side interface part is not more than that of the n-side interface part.
摘要翻译： 根据一个实施例，半导体发光器件包括n型第一半导体层，p型第二半导体层和发光层。 发光层设置在第一和第二半导体层之间，并且包括多个阻挡层，包括氮化物半导体和设置在阻挡层之间的阱层，并且包括含有In的氮化物半导体。 阻挡层和阱层从第二半导体层向第一半导体层沿第一方向堆叠。 阱层具有p侧接口部和n侧接口部。 p侧和n侧接口部分中的每一个包括与阻挡层中的一个的界面。 在垂直于p侧接口部分的第一方向的表面中的In浓度的变化不大于n侧接口部分的浓度变化。
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公开(公告)号：US08816367B2
公开(公告)日：2014-08-26
申请号：US13727147
申请日：2012-12-26
申请人： Jumpei Tajima , Kotaro Zaima , Hiroshi Ono , Shinji Yamada , Shigeya Kimura , Naoharu Sugiyama , Shinya Nunoue
发明人： Jumpei Tajima , Kotaro Zaima , Hiroshi Ono , Shinji Yamada , Shigeya Kimura , Naoharu Sugiyama , Shinya Nunoue
IPC分类号： H01L33/22
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/382 , H01L33/385 , H01L33/405
摘要： According to one embodiment, a semiconductor light emitting device includes first and second electrodes, first and second semiconductor layers and a light emitting layer. The first electrode includes a first region, a second region, and a third region provided between them. The first semiconductor layer includes a first portion on the first region and a second portion on the second region. The light emitting layer includes a third portion on the first portion and a fourth portion on the second portion. The second semiconductor layer includes a fifth portion on the third portion and a sixth portion on the fourth portion. The insulating layer is provided between the first and second portions on the third region and between the third and fourth portions. The second electrode includes a seventh portion provided on the insulating layer, eighth and ninth portions contacting side surfaces of the fifth and sixth portions.
摘要翻译： 根据一个实施例，半导体发光器件包括第一和第二电极，第一和第二半导体层以及发光层。 第一电极包括第一区域，第二区域和设置在它们之间的第三区域。 第一半导体层包括第一区域上的第一部分和第二区域上的第二部分。 发光层包括第一部分上的第三部分和第二部分上的第四部分。 第二半导体层包括第三部分上的第五部分和第四部分上的第六部分。 绝缘层设置在第三区域上的第一和第二部分之间以及第三和第四部分之间。 第二电极包括设置在绝缘层上的第七部分，与第五和第六部分的侧表面接触的第八和第九部分。
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公开(公告)号：US08809085B2
公开(公告)日：2014-08-19
申请号：US13222238
申请日：2011-08-31
CPC分类号： H01L33/0079 , H01L33/22
摘要： According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate.
摘要翻译： 根据一个实施例，公开了一种用于制造氮化物半导体器件的方法。 该方法可以包括通过使用第一处理材料从结构体移除生长衬底。 结构体具有生长衬底，形成在生长衬底上的缓冲层和形成在缓冲层上的氮化物半导体层。 支撑基板结合到氮化物半导体层。 该方法可以包括在除去生长衬底之后使用与第一处理材料不同的第二处理材料来减小缓冲层和氮化物半导体层的厚度。
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8.发明授权Crystal growth method for nitride semiconductor having a multiquantum well structure 有权具有多量子阱结构的氮化物半导体的晶体生长方法公开(公告)号：US08728237B2
公开(公告)日：2014-05-20
申请号：US12874594
申请日：2010-09-02
IPC分类号： C30B25/02
CPC分类号： H01L21/02636 , C30B25/02 , C30B29/403 , H01L21/0254 , H01L33/007
摘要： A method for growing nitride semiconductor crystals contains: growing a first semiconductor layer containing InxGa1-xN (0
摘要翻译： 一种用于生长氮化物半导体晶体的方法包括：使用含有惰性气体的第一载气，在第一生长温度下，在衬底上生长含有In x Ga 1-x N（0
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公开(公告)号：US08698123B2
公开(公告)日：2014-04-15
申请号：US13213373
申请日：2011-08-19
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part. The n-type semiconductor layer includes a nitride semiconductor. The p-type semiconductor layer includes a nitride semiconductor. The light emitting part is provided between the n-type and the p-type semiconductor layers and includes an n-side barrier layer and a first light emitting layer. The first light emitting layer includes a first barrier layer, a first well layer, and a first AlGaN layer. The first barrier layer is provided between the n-side barrier layer and the p-type semiconductor layer. The first well layer contacts the n-side barrier layer between the n-side and the first barrier layer. The first AlGaN layer is provided between the first well layer and the first barrier layer. A peak wavelength λp of light emitted from the light emitting part is longer than 515 nanometers.
摘要翻译： 根据一个实施例，半导体发光器件包括n型半导体层，p型半导体层和发光部分。 n型半导体层包括氮化物半导体。 p型半导体层包括氮化物半导体。 发光部分设置在n型和p型半导体层之间，并且包括n侧阻挡层和第一发光层。 第一发光层包括第一阻挡层，第一阱层和第一AlGaN层。 第一阻挡层设置在n侧势垒层和p型半导体层之间。 第一阱层与n侧和第一阻挡层之间的n侧势垒层接触。 第一AlGaN层设置在第一阱层和第一势垒层之间。 从发光部发出的光的峰值波长λp长于515nm。
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公开(公告)号：US08680508B2
公开(公告)日：2014-03-25
申请号：US13222500
申请日：2011-08-31
申请人： Toshiki Hikosaka , Koichi Tachibana , Hajime Nago , Shinya Nunoue
发明人： Toshiki Hikosaka , Koichi Tachibana , Hajime Nago , Shinya Nunoue
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/0075 , H01L33/32 , H01S5/305 , H01S5/3407 , H01S5/34333
摘要： According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers. The first portion layer is disposed on a side of the n-type layer. The second portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the first portion layer. At least one of the well layers includes third and fourth portion layers. The third portion layer is disposed on a side of the n-type layer. The fourth portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the third portion layer.
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