摘要:
The present invention relates to an improved solid-state imaging device having pixel amplifiers. The higher definition of the device results in the increase in number of pixels as large as not less than two million. When a solid-state imaging device having such a large number of pixels is provided with pixel amplifiers, there arise various problems associated with a power source and a power supply line as well as a problem inherent to the pixel amplifier type of solid-state imaging device. The present invention provides a solid-state imaging device in which noises or the like are prevented and a picture or image quality having high definition can be obtained, by suppressing a voltage drop of the power supply line and by compensating fluctuations in outputs of the pixel amplifiers.
摘要:
A solid-state imaging device has a plurality of light receiving elements formed in a semiconductor substrate. Signal electric charges generated by light incident upon the light receiving elements and stored in the individual light receiving elements are sequentially read out through signal lines by scanning a plurality of switches. Each of the switches includes a series connection of a first MOS transistor switching element formed in the semiconductor substrate and a second MOS transistor formed in a semiconductor provided above the semiconductor substrate through an insulator. The first switching element is disposed on the side of the light receiving element and the second switching element is disposed on the side of the signal output terminal.
摘要:
A solid-state imaging device has a plurality of photodiodes (photoelectric conversion elements) formed in a surface of a semiconductor substrate in a matrix configuration and reading means for reading out signal charges stored in the photodiodes in accordance with the incident lights in a predetermined order. This reading means includes active elements, such as MOS type transistors, connected to each of the photodiodes. A MOS type transistor constituting part of theses active elements is provided in the path of the transmitting incident light for the associated photodiode. By this configuration, the area occupied by one picture element is reduced as far as the processing steps allow.
摘要:
According to the present invention, the number of elements of a signal processing circuit or the like can be drastically reduced by conducting a time-multiplex processing. In a transversal filter having a coefficient of symmetry of 16 taps, for example, the prior art requires about 58,000 transistors. In case four signal processing cores (i.e., SPC) having a function of four taps are used, the number of transistors required can be reduced to about 34,000 by a duplexing process. In case two SPCs having a function of eight taps are used, the number can be reduced to about 19,000 by a quadplexing process. In case, moreover, one SPC having a function of sixteen taps is used, the number can be reduced to about 13,000 by an octaplexing process. Here, the reason why the number of elements is not halved even if the number of the SPCs is halved is that the number of elements to be used in control circuits, memories and so on increases.
摘要:
A solid state image pickup device having a plurality of solid state elements in a two-dimensional array so as to form picture cells. Each solid state element includes a photoelectric converting element and a switching field effect transistor to permit scanning of the elements by scanners. To counteract noise and blooming, a second field effect transistor acting as an amplifier is connected between the photoelectric converting element and the switching field effect transistor. A third field effect transistor is coupled to the photoelectric converting element for resetting the same.
摘要:
In a charge transfer semiconductor device majority carriers are transferred within a semiconductor body on a substrate from means for introducing majority carriers to means for detecting transferred majority carriers by applying pulsed voltages to a series of electrodes disposed on an insulating layer which is disposed on one surface of the semiconductor body between the introducing means and the detecting means. Depletion regions are formed within the semiconductor body, so that one end of a depletion region below one electrode reaches the substrate and another end of a depletion region below an electrode next to the one electrode does not reach the substrate, whereby majority carriers below the one electrode are pushed out below the next electrode.
摘要:
A logic LSI has a plurality of modules such as a CPU contained in one chip. Frequency changing conditions, signals for designating modules whose frequencies are changed for each frequency changing condition, and signals for designating frequencies to be changed are stored in a storage device of a frequency controller, software-wise. The sequentially-input status of the logic LSI is compared with the stored frequency changing conditions and, when the former conforms to the latter, a signal for changing the corresponding frequency is applied to each of the plurality of modules. Each of the modules generates a plurality of internal clocks in synchronization with the basic clock and selects one out of the internal clocks according to the frequency changing signal.
摘要:
A digital signal processor for computing a vector product between a column vector input signal including a plurality of data items (x0, x1, x2, . . . , x7) and a matrix including a predetermined number of coefficient data items so as to produce a column vector output signal including a plurality of data items (y0, y1, y2, . . . , y7). In a first cycle, the leading data x0 of the column vector input signal is stored in a first store unit (Rin), whereas during this period of time, in a second cycle shorter in time than the first cycle, the data items (c0, c1, c2, . . . , c7) in the row direction constituting a first portion of the matrix are sequentially read out such that both data items are multiplied, thereby storing the multiplication results in an accumulator. A similar data processing is repeatedly executed so as to obtain, based on the outputs from the accumulator, a column vector output signal constituted by the plurality of data items (y0, y1, y2, . . . , y7).
摘要:
Vertical CCD registers constituting parts of an interline type CCD imaging device hold independently the signal charges transferred from photoelectric conversion elements and having different storage durations. Transfer of charge to the vertical CCD registers from the photoelectric conversion element is performed at least twice during one field period. The vertical CCD registers transfer the signal charges of different storage durations independent of one another.
摘要:
A charge transfer type solid-state device incorporating a charge coupled device (CCD). In order to eliminate field after image and smear, at least two electrode pairs are provided in a vertical CCD shift register for transferring the signal charges stored in photoelectric conversion elements, the electrode pairs being disposed within the vertical pitch of the photoelectric conversion elements. P