摘要:
A thin-film transistor includes a semiconductor thin film provided on an insulating surface of a support substrate, a gate insulator provided on the semiconductor thin film, and a gate electrode layer formed on the semiconductor thin film with the gate insulator interposed therebetween. The semiconductor thin film includes a channel region disposed below the gate electrode layer, and source and drain regions disposed on both sides of the channel region. The source region has an impurity concentration profile in which an impurity concentration is lowered from an interface with the gate insulator toward an interface with the support substrate in a thickness direction of the semiconductor thin film. The impurity concentration near the support substrate is lower than the impurity concentration near the gate insulator by a factor of 100 or more in the impurity concentration profile of the source region.
摘要:
There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.
摘要:
A water-repellent/oil-repellent material that is decomposed to disappear by light irradiation is used to eliminate a water-repellent/oil-repellent layer on ITO electrodes. By forming light emitting layers in regions subjected to the elimination, patterning is carried out.
摘要:
The present invention provides a magnetic disc apparatus comprising a vertical two-layered magnetic recording (MR) medium and a mono-pole/MR composite head or ID/MR composite head, wherein the vertical two-layered magnetic recording medium includes a vertical magnetization film formed on an undercoat soft magnetic film having no magnetic domain wall structure. This eliminates the fatal defect of a conventional vertical two-layered medium that an undercoat soft magnetic film domain wall is easily shifted by an external magnetic field generated by motors for disc rotation and head positioning, causing demagnetization of the recording magnetization to lower the output. The magnetic disc apparatus according to the present invention enables to obtain a high output stability.
摘要:
There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.
摘要:
There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.
摘要:
An emitting device in an organic electroluminescent device is disclosed, in which a lower electrode pattern is formed on a substrate, an emitting layer pattern is formed on the lower electrode pattern, and a transparent electrode is formed on the emitting layer pattern and an emitting body having a structure in which an organic thin film emits light when an application current is applied to it. The pattern of the transparent electrode completely covers and is larger than that of the lower electrode. The pattern of the transparent electrode is formed over the entire area of the pattern of the lower electrode.
摘要:
The present invention provides a perpendicular magnetic recording medium 11 having a perpendicular magnetization film 22 formed on a substrate 20, wherein a high perpendicular orientation film 24 having higher perpendicular orientation than that of the perpendicular magnetization film 22 is formed over or/and under the perpendicular magnetization film 22.
摘要:
It is intended to reduce the media noise, and to improve the recording density dependence of read output voltage. The present invention provides a perpendicular magnetic recording media and its manufacturing process, wherein a perpendicular magnetic recording medium comprises a soft magnetic underlayer film and a perpendicular magnetizing film, these films being formed on a substrate in this order, a smoothness control film such as Cr film, being inserted between the substrate and the soft magnetic underlayer film. Therefore, perpendicular orientation and surface smoothness are improved for the perpendicular magnetizing film laminated on the smooth surface of the soft magnetic underlayer film. As the perpendicular orientation is improved for the perpendicular magnetizing film, the initial layer is reduced, thereby media noise being lowered and recording density dependence of read output voltage being improved. In addition, as the surface smoothness is improved for the perpendicular magnetizing film, sliding characteristics of a recording/reproducing head is also improved, thereby this also lowering the media noise.
摘要:
In a perpendicular magnetic recording medium, a soft magnetic film playing the role of an back layer, but not having a domain wall structure, is positioned beneath a perpendicular magnetization film. Such a back layer improves the envelope characteristic of the medium at the time of recording and reproduction. Moreover, the medium is free from spike noise and the decrease or cancellation of recorded magnetization ascribable to the movement of the domain wall of a back layer. The medium of the present invention is therefore a drastic solution to the problems particular to a conventional perpendicular magnetic recording medium and realizes desirable recording and reproducing characteristics.