摘要:
The present invention includes a memory cell device and method that includes a memory cell, a first electrode, a second electrode, phase-change material and an isolation material. The phase-change material is coupled adjacent the first electrode. The second electrode is coupled adjacent the phase-change material. The isolation material adjacent the phase-change material thermally isolates the phase-change material.
摘要:
A memory cell includes a first electrode, a second electrode, and phase-change material including a first portion contacting the first electrode, a second portion contacting the second electrode, and a third portion between the first portion and the second portion. A width of the third portion is less than a width of the first portion and a width of the second portion.
摘要:
An integrated circuit includes a first electrode including an inner portion and an outer portion laterally surrounding the inner portion. The outer portion has a greater resistivity than the inner portion. The integrated circuit includes a second electrode and resistivity changing material contacting the first electrode and coupled to the second electrode.
摘要:
An integrated circuit includes a first electrode including an inner portion and an outer portion laterally surrounding the inner portion. The outer portion has a greater resistivity than the inner portion. The integrated circuit includes a second electrode and resistivity changing material contacting the first electrode and coupled to the second electrode.
摘要:
The present invention includes a memory cell device and method that includes a memory cell, a first electrode, a second electrode, phase-change material and an isolation material. The phase-change material is coupled adjacent the first electrode. The second electrode is coupled adjacent the phase-change material. The isolation material adjacent the phase-change material thermally isolates the phase-change material.
摘要:
A memory cell includes a first electrode having a first region and a second region, a second electrode and a phase change material. The phase change material is interposed between the first electrode and the second electrode with the first region of the first electrode arranged closer to the phase change material than the second region. The first region of the first electrode includes an inner portion laterally surrounded by an outer portion. The outer portion has a greater resistivity than the inner portion. The second region of the first electrode has the same resistivity as the inner portion of the first region.
摘要:
A memory cell includes a first electrode having a first region and a second region, a second electrode and a phase change material. The phase change material is interposed between the first electrode and the second electrode with the first region of the first electrode arranged closer to the phase change material than the second region. The first region of the first electrode includes an inner portion laterally surrounded by an outer portion. The outer portion has a greater resistivity than the inner portion. The second region of the first electrode has the same resistivity as the inner portion of the first region.
摘要:
An integrated circuit includes a first electrode, a second electrode, and dielectric material including an opening. The opening is defined by etching the dielectric material based on an oxidized polysilicon mask formed using a keyhole process. The integrated circuit includes resistivity changing material deposited in the opening and coupled between the first electrode and the second electrode.
摘要:
A method of fabricating memory cells on a wafer includes forming cavities in a dielectric layer, where each of the cavities includes at least one corner. The method additionally includes depositing a memory cell material into the corner(s) of the cavities, and removing a portion of the memory cell material from the cavities such that an active portion of the memory cell material remains in the corner(s).
摘要:
A phase change memory cell includes a first spacer electrically coupled to a first electrode and to a second spacer. The first spacer includes a planar base contacting the first electrode and a wall extending from the planar base. The second spacer is electrically coupled between a second electrode and the wall of the first spacer. The phase change memory cell is formed at a boundary where the wall of the first spacer contacts the second spacer.