Low power phase change memory cell with large read signal
    2.
    发明申请
    Low power phase change memory cell with large read signal 有权
    具有较大读取信号的低功率相变存储单元

    公开(公告)号:US20060261321A1

    公开(公告)日:2006-11-23

    申请号:US11133491

    申请日:2005-05-20

    IPC分类号: H01L47/00

    摘要: A memory cell includes a first electrode, a second electrode, and phase-change material including a first portion contacting the first electrode, a second portion contacting the second electrode, and a third portion between the first portion and the second portion. A width of the third portion is less than a width of the first portion and a width of the second portion.

    摘要翻译: 存储单元包括第一电极,第二电极和相变材料,其包括接触第一电极的第一部分,接触第二电极的第二部分和第一部分与第二部分之间的第三部分。 第三部分的宽度小于第一部分的宽度和第二部分的宽度。

    Integrated circuit including an electrode having an outer portion with greater resistivity
    3.
    发明授权
    Integrated circuit including an electrode having an outer portion with greater resistivity 失效
    集成电路包括具有较大电阻率的外部部分的电极

    公开(公告)号:US07760546B2

    公开(公告)日:2010-07-20

    申请号:US12038850

    申请日:2008-02-28

    申请人: Shoaib Zaidi

    发明人: Shoaib Zaidi

    IPC分类号: G11C11/00

    摘要: An integrated circuit includes a first electrode including an inner portion and an outer portion laterally surrounding the inner portion. The outer portion has a greater resistivity than the inner portion. The integrated circuit includes a second electrode and resistivity changing material contacting the first electrode and coupled to the second electrode.

    摘要翻译: 集成电路包括包括内部部分和横向围绕内部部分的外部部分的第一电极。 外部部分具有比内部部分更大的电阻率。 集成电路包括与第一电极接触并耦合到第二电极的第二电极和电阻率变化材料。

    Memory device including an electrode having an outer portion with greater resistivity
    6.
    发明授权
    Memory device including an electrode having an outer portion with greater resistivity 失效
    存储器件包括具有较大电阻率的外部部分的电极

    公开(公告)号:US08189374B2

    公开(公告)日:2012-05-29

    申请号:US12826201

    申请日:2010-06-29

    申请人: Shoaib Zaidi

    发明人: Shoaib Zaidi

    IPC分类号: G11C11/00

    摘要: A memory cell includes a first electrode having a first region and a second region, a second electrode and a phase change material. The phase change material is interposed between the first electrode and the second electrode with the first region of the first electrode arranged closer to the phase change material than the second region. The first region of the first electrode includes an inner portion laterally surrounded by an outer portion. The outer portion has a greater resistivity than the inner portion. The second region of the first electrode has the same resistivity as the inner portion of the first region.

    摘要翻译: 存储单元包括具有第一区域和第二区域的第一电极,第二电极和相变材料。 相变材料介于第一电极和第二电极之间,第一电极的第一区域比第二区域更接近相变材料。 第一电极的第一区域包括被外部横向包围的内部部分。 外部部分具有比内部部分更大的电阻率。 第一电极的第二区域具有与第一区域的内部相同的电阻率。

    Memory Device Including an Electrode Having an Outer Portion With Greater Resistivity
    7.
    发明申请
    Memory Device Including an Electrode Having an Outer Portion With Greater Resistivity 失效
    包含具有较高电阻率的外部部分的电极的存储器件

    公开(公告)号:US20100265763A1

    公开(公告)日:2010-10-21

    申请号:US12826201

    申请日:2010-06-29

    申请人: Shoaib Zaidi

    发明人: Shoaib Zaidi

    IPC分类号: G11C11/00 H01L45/00

    摘要: A memory cell includes a first electrode having a first region and a second region, a second electrode and a phase change material. The phase change material is interposed between the first electrode and the second electrode with the first region of the first electrode arranged closer to the phase change material than the second region. The first region of the first electrode includes an inner portion laterally surrounded by an outer portion. The outer portion has a greater resistivity than the inner portion. The second region of the first electrode has the same resistivity as the inner portion of the first region.

    摘要翻译: 存储单元包括具有第一区域和第二区域的第一电极,第二电极和相变材料。 相变材料介于第一电极和第二电极之间,第一电极的第一区域比第二区域更接近相变材料。 第一电极的第一区域包括被外部横向包围的内部部分。 外部部分具有比内部部分更大的电阻率。 第一电极的第二区域具有与第一区域的内部部分相同的电阻率。

    INTEGRATED CIRCUIT FABRICATED USING AN OXIDIZED POLYSILICON MASK
    8.
    发明申请
    INTEGRATED CIRCUIT FABRICATED USING AN OXIDIZED POLYSILICON MASK 有权
    使用氧化聚硅氧烷掩模制成的集成电路

    公开(公告)号:US20090218556A1

    公开(公告)日:2009-09-03

    申请号:US12038846

    申请日:2008-02-28

    申请人: Shoaib Zaidi

    发明人: Shoaib Zaidi

    IPC分类号: H01L29/04 H01L21/311

    摘要: An integrated circuit includes a first electrode, a second electrode, and dielectric material including an opening. The opening is defined by etching the dielectric material based on an oxidized polysilicon mask formed using a keyhole process. The integrated circuit includes resistivity changing material deposited in the opening and coupled between the first electrode and the second electrode.

    摘要翻译: 集成电路包括第一电极,第二电极和包括开口的电介质材料。 通过使用键孔工艺形成的氧化多晶硅掩模蚀刻介电材料来限定开口。 集成电路包括沉积在开口中并耦合在第一电极和第二电极之间的电阻率变化材料。

    Memory cell having active region sized for low reset current and method of fabricating such memory cells
    9.
    发明申请
    Memory cell having active region sized for low reset current and method of fabricating such memory cells 审中-公开
    具有用于低复位电流大小的有源区的存储单元和制造这种存储单元的方法

    公开(公告)号:US20080012079A1

    公开(公告)日:2008-01-17

    申请号:US11487876

    申请日:2006-07-17

    申请人: Shoaib Zaidi

    发明人: Shoaib Zaidi

    IPC分类号: H01L29/00 H01L21/8234

    摘要: A method of fabricating memory cells on a wafer includes forming cavities in a dielectric layer, where each of the cavities includes at least one corner. The method additionally includes depositing a memory cell material into the corner(s) of the cavities, and removing a portion of the memory cell material from the cavities such that an active portion of the memory cell material remains in the corner(s).

    摘要翻译: 在晶片上制造存储单元的方法包括在电介质层中形成空腔,其中每个空腔包括至少一个拐角。 该方法还包括将存储器单元材料沉积到空腔的角部中,以及从空腔中移除存储单元材料的一部分,使得存储单元材料的有效部分保留在拐角中。

    Memory device
    10.
    发明申请
    Memory device 审中-公开
    内存设备

    公开(公告)号:US20070267618A1

    公开(公告)日:2007-11-22

    申请号:US11435594

    申请日:2006-05-17

    IPC分类号: H01L29/02 H01L29/04

    摘要: A phase change memory cell includes a first spacer electrically coupled to a first electrode and to a second spacer. The first spacer includes a planar base contacting the first electrode and a wall extending from the planar base. The second spacer is electrically coupled between a second electrode and the wall of the first spacer. The phase change memory cell is formed at a boundary where the wall of the first spacer contacts the second spacer.

    摘要翻译: 相变存储单元包括电耦合到第一电极和第二间隔物的第一间隔件。 第一间隔件包括接触第一电极的平面底座和从平面底座延伸的壁。 第二间隔件电连接在第二电极和第一间隔件的壁之间。 相变存储单元形成在第一间隔件的壁与第二间隔件接触的边界处。