公开(公告)号：US09222732B2

公开(公告)日：2015-12-29

申请号：US13229543

申请日：2011-09-09

申请人： Kenji Shirako ,  Takatomo Yamaguchi ,  Shuhei Saido ,  Akihiro Sato

发明人： Kenji Shirako ,  Takatomo Yamaguchi ,  Shuhei Saido ,  Akihiro Sato

IPC分类号： H05B6/00 ,  H05B6/22 ,  F28F1/00 ,  C23C16/44 ,  C23C16/458 ,  C30B25/02 ,  C30B29/36 ,  F28F3/08 ,  H01L21/67 ,  H05B6/02 ,  H05B6/10 ,  F28F21/02

CPC分类号： F28F1/00 ,  C23C16/44 ,  C23C16/4584 ,  C30B25/02 ,  C30B29/36 ,  F28F3/086 ,  F28F21/02 ,  H01L21/67109 ,  H05B6/02 ,  H05B6/105

摘要： Provided is a substrate processing apparatus capable of maintaining a temperature of a furnace port part at a heat-resistant temperature or less of each member constituting the furnace part. The substrate processing apparatus includes a process chamber configured to process a plurality of substrates vertically stacked at predetermined intervals; a substrate retainer configured to hold the plurality of substrates in the process chamber; and a first heat exchanger installed in the process chamber to support the substrate retainer from a lower portion of the substrate retainer, and configured to perform a heat exchange with a gas flowing in a downward direction from a side of the substrate retainer in the process chamber, wherein the first heat exchanger includes a hollow cylindrical insulating tube vertically extending in the downward direction and an insulating plate installed in the insulating tube, and regions in the insulating tube over and under the insulating plate are spatially connected to each other.

摘要翻译： 提供一种能够将炉口部的温度保持在构成炉部的各构件的耐热温度以下的基板处理装置。 基板处理装置包括：处理室，被配置为处理以预定间隔垂直堆叠的多个基板; 衬底保持器，其构造成将所述多个衬底保持在所述处理室中; 以及第一热交换器，其安装在所述处理室中，以从所述基板保持器的下部支撑所述基板保持器，并且被配置为与所述处理室中的所述基板保持器的侧面沿着向下的方向流动的气体进行热交换 其特征在于，所述第一热交换器具有向下方延伸的中空圆柱形绝缘管和安装在所述绝缘管中的绝缘板，绝缘板的上下绝缘体的区域彼此空间连接。

公开(公告)号：US08851886B2

公开(公告)日：2014-10-07

申请号：US12363059

申请日：2009-01-30

申请人： Shinya Morita ,  Akihiro Sato ,  Akinori Tanaka ,  Shigeo Nakada ,  Takayuki Nakada ,  Shuhei Saido ,  Tomoyuki Matsuda

发明人： Shinya Morita ,  Akihiro Sato ,  Akinori Tanaka ,  Shigeo Nakada ,  Takayuki Nakada ,  Shuhei Saido ,  Tomoyuki Matsuda

IPC分类号： F27D1/18 ,  C23C16/44 ,  C23C16/455 ,  H01L21/67

CPC分类号： H01L21/67109 ,  C23C16/4401 ,  C23C16/455 ,  H01L21/67098

摘要： Provided is a substrate processing apparatus. The substrate processing apparatus includes a reaction tube; a heating device configured to heat the reaction tube; and a manifold installed outward as compared with the heating device and made of a non-metallic material. A first thickness of the manifold defined in a direction perpendicular to a center axis of the reaction tube is greater than a second thickness of the manifold defined at a position adjacent to the reaction tube in a direction parallel to the center axis of the reaction tube. The manifold includes a protrusion part of which at least a portion protrudes inward more than an inner wall of the reaction tube, and a gas supply unit disposed at at least the protrusion part for supplying gas to an inside of the reaction tube.

摘要翻译： 提供了一种基板处理装置。 基板处理装置包括反应管; 构造成加热反应管的加热装置; 以及与加热装置相比并且由非金属材料制成的歧管。 在垂直于反应管的中心轴的方向上限定的歧管的第一厚度大于在与反应管的中心轴平行的方向上与反应管相邻的位置处限定的歧管的第二厚度。 歧管包括突出部分，其至少一部分比反应管的内壁向内突出;以及气体供应单元，设置在至少突出部分处，用于将气体供应到反应管的内部。

公开(公告)号：US20090197409A1

公开(公告)日：2009-08-06

申请号：US12363059

申请日：2009-01-30

申请人： Shinya MORITA ,  Akihiro SATO ,  Akinori TANAKA ,  Shigeo NAKADA ,  Takayuki NAKADA ,  Shuhei SAIDO ,  Tomoyuki MATSUDA

发明人： Shinya MORITA ,  Akihiro SATO ,  Akinori TANAKA ,  Shigeo NAKADA ,  Takayuki NAKADA ,  Shuhei SAIDO ,  Tomoyuki MATSUDA

IPC分类号： H01L21/285 ,  C23C16/44

CPC分类号： H01L21/67109 ,  C23C16/4401 ,  C23C16/455 ,  H01L21/67098

摘要： Provided is a substrate processing apparatus. The substrate processing apparatus comprises a reaction tube; a heating device configured to heat the reaction tube; and a manifold installed outward as compared with the heating device and made of a nonmetallic material. A first thickness of the manifold defined in a direction perpendicular to a center axis of the reaction tube is greater than a second thickness of the manifold defined at a position adjacent to the reaction tube in a direction parallel to the center axis of the reaction tube. The manifold comprises a protrusion part of which at least a portion protrudes inward more than an inner wall of the reaction tube, and a gas supply unit disposed at at least the protrusion part for supplying gas to an inside of the reaction tube.

摘要翻译： 提供了一种基板处理装置。 基板处理装置包括反应管; 构造成加热反应管的加热装置; 以及与加热装置相比并且由非金属材料制成的歧管。 在垂直于反应管的中心轴的方向上限定的歧管的第一厚度大于在与反应管的中心轴平行的方向上与反应管相邻的位置处限定的歧管的第二厚度。 歧管包括突出部分，其至少一部分比反应管的内壁向内突出;以及气体供应单元，设置在至少突出部分处，以将气体供应到反应管的内部。

公开(公告)号：US09028614B2

公开(公告)日：2015-05-12

申请号：US13406056

申请日：2012-02-27

申请人： Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

发明人： Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/67 ,  C30B25/08 ,  C30B25/14 ,  C30B29/36 ,  H01L21/673 ,  H01L21/677 ,  C23C16/32 ,  C23C16/44

CPC分类号： H01L21/67109 ,  C23C16/325 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/458 ,  C23C16/4581 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4584 ,  C23C16/4587 ,  C23C16/4588 ,  C23C16/46 ,  C30B25/08 ,  C30B25/14 ,  C30B29/36 ,  H01L21/67303 ,  H01L21/67309 ,  H01L21/67757

摘要： When processing such as SiC epitaxial growth is performed at an ultrahigh temperature of 1500° C. to 1700° C., a film-forming gas can be decreased to heat-resistant temperature of a manifold and film quality uniformity can be improved. A substrate processing apparatus includes a reaction chamber for processing a plurality of substrates, a boat for holding the plurality of substrates, a gas supply nozzle for supplying a film-forming gas to the plurality of substrates, an exhaust port for exhausting the film-forming gas supplied into the reaction chamber, a heat exchange part which defines a second flow path narrower than a first flow path defined by an inner wall of the reaction chamber and the boat, and a gas discharge part installed under the lowermost substrate of the plurality of substrates.

摘要翻译： 当在1500℃至1700℃的超高温下进行诸如SiC外延生长的处理时，可以将成膜气体降低至歧管的耐热温度，并且可以提高膜质量均匀性。 基板处理装置包括用于处理多个基板的反应室，用于保持多个基板的船，用于向多个基板供给成膜气体的气体供给喷嘴，用于排出成膜的排气口 供应到反应室的气体，限定比由反应室和船的内壁限定的第一流动路径窄的第二流动路径的热交换部分，以及安装在多个 底物。

公开(公告)号：US20110056434A1

公开(公告)日：2011-03-10

申请号：US12868949

申请日：2010-08-26

申请人： Takatomo YAMAGUCHI ,  Akihiro SATO ,  Kenji SHIRAKO ,  Shuhei SAIDO

发明人： Takatomo YAMAGUCHI ,  Akihiro SATO ,  Kenji SHIRAKO ,  Shuhei SAIDO

IPC分类号： C23C16/32

CPC分类号： C23C16/325 ,  C23C16/46 ,  C30B25/08 ,  C30B29/36 ,  C30B30/04 ,  H01L21/67109

摘要： Provided is a heat treatment apparatus in which the temperature of an insulator heated by an induction current can be kept low and a susceptor can be efficiently heated. The heat treatment apparatus is provided for growing silicon carbide single crystal films or silicon carbide polycrystal films on a plurality of silicon carbide substrates. The heat treatment apparatus comprises a coil installed around an outside of a reaction tube to generate a magnetic field, a susceptor installed in the reaction tube and configured to be heated by an induction current, and an insulator installed between the susceptor and the reaction tube. The insulator is divided into parts in a circumferential direction, and an insulating material is inserted between the divided parts of the insulator.

摘要翻译： 提供一种热感应装置，其中通过感应电流加热的绝缘体的温度可以保持较低，并且可以有效地加热基座。 该热处理设备用于在多个碳化硅衬底上生长碳化硅单晶膜或碳化硅多晶膜。 热处理装置包括：安装在反应管外侧以产生磁场的线圈;安装在反应管中并被构造成由感应电流加热的基座;以及安装在基座和反应管之间的绝缘体。 绝缘子在圆周方向上被分成多个部分，并且绝缘材料插入在绝缘体的分割部分之间。

公开(公告)号：US08771416B2

公开(公告)日：2014-07-08

申请号：US12822293

申请日：2010-06-24

申请人： Shuhei Saido ,  Takatomo Yamaguchi ,  Kenji Shirako

发明人： Shuhei Saido ,  Takatomo Yamaguchi ,  Kenji Shirako

IPC分类号： C30B25/10

CPC分类号： C30B29/36 ,  C23C16/325 ,  C23C16/46 ,  C30B25/10 ,  C30B25/165 ,  Y10T117/10 ,  Y10T117/1016

摘要： A substrate processing apparatus comprises: a reaction chamber to process a substrate; a heating target object disposed in the reaction chamber to surround at least a region where the substrate is disposed, the heating target object having a cylindrical shape with a closed end; an insulator disposed between the reaction chamber and the heating target object to surround the heating target object, the insulator having a cylindrical shape with a closed end facing the closed end of the heating target object; an induction heating unit disposed outside the reaction chamber to surround at least the region where the substrate is disposed; a first gas supply system to supply at least a source gas into the reaction chamber; and a controller to control the first gas supply system so that the first gas supply system supplies at least the source gas into the reaction chamber for processing the substrate.

摘要翻译： 一种基板处理装置，包括：处理基板的反应室; 设置在所述反应室中的加热目标物体至少包围设置有所述基板的区域，所述加热对象物体具有封闭端的圆筒形状; 设置在所述反应室和所述加热对象物之间以包围所述加热对象物体的绝缘体，所述绝缘体具有圆筒形状，所述绝缘体的封闭端面对所述加热目标物体的封闭端; 设置在所述反应室外部的感应加热单元，至少包围所述基板设置的区域; 第一气体供应系统，用于将至少一种源气体供应到所述反应室中; 以及控制器，用于控制第一气体供应系统，使得第一气体供应系统至少将源气体供应到反应室中以处理基板。

公开(公告)号：US20120220108A1

公开(公告)日：2012-08-30

申请号：US13406056

申请日：2012-02-27

申请人： Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

发明人： Daisuke Hara ,  Takeshi Itoh ,  Masanao Fukuda ,  Takatomo Yamaguchi ,  Hiroaki Hiramatsu ,  Shuhei Saido ,  Takafumi Sasaki

IPC分类号： H01L21/20 ,  H01L21/306 ,  C23C16/455

CPC分类号： H01L21/67109 ,  C23C16/325 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/455 ,  C23C16/458 ,  C23C16/4581 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4584 ,  C23C16/4587 ,  C23C16/4588 ,  C23C16/46 ,  C30B25/08 ,  C30B25/14 ,  C30B29/36 ,  H01L21/67303 ,  H01L21/67309 ,  H01L21/67757

摘要： When processing such as SiC epitaxial growth is performed at an ultrahigh temperature of 1500° C. to 1700° C., a film-forming gas can be decreased to heat-resistant temperature of a manifold and film quality uniformity can be improved. A substrate processing apparatus includes a reaction chamber for processing a plurality of substrates, a boat for holding the plurality of substrates, a gas supply nozzle for supplying a film-forming gas to the plurality of substrates, an exhaust port for exhausting the film-forming gas supplied into the reaction chamber, a heat exchange part which defines a second flow path narrower than a first flow path defined by an inner wall of the reaction chamber and the boat, and a gas discharge part installed under the lowermost substrate of the plurality of substrates.

摘要翻译： 当在1500℃至1700℃的超高温下进行诸如SiC外延生长的处理时，可以将成膜气体降低至歧管的耐热温度，并且可以提高膜质量均匀性。 基板处理装置包括用于处理多个基板的反应室，用于保持多个基板的船，用于向多个基板供给成膜气体的气体供给喷嘴，用于排出成膜的排气口 供应到反应室的气体，限定比由反应室和船的内壁限定的第一流动路径窄的第二流动路径的热交换部分，以及安装在多个 底物。

公开(公告)号：US20120214317A1

公开(公告)日：2012-08-23

申请号：US13399558

申请日：2012-02-17

申请人： Masaki Murobayashi ,  Takatomo Yamaguchi ,  Kenji Shirako ,  Shuhei Saido ,  Akihiro Sato ,  Yoshinori Imai

发明人： Masaki Murobayashi ,  Takatomo Yamaguchi ,  Kenji Shirako ,  Shuhei Saido ,  Akihiro Sato ,  Yoshinori Imai

IPC分类号： H01L21/31 ,  C23C16/52 ,  C23C16/455

CPC分类号： H01L21/67757 ,  C23C16/325 ,  C23C16/4408 ,  C23C16/45519 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/463 ,  C23C16/54 ,  H01L21/67109

摘要： A substrate processing apparatus includes a processing chamber configured to process a plurality of substrates, a substrate holder accommodated within the processing chamber and configured to hold the substrates in a vertically spaced-apart relationship, a thermal insulation portion configured to support the substrate holder from below within the processing chamber, a heating unit provided to surround a substrate accommodating region within the processing chamber, and a gas supply system configured to supply a specified gas to at least a thermal insulation portion accommodating region within the processing chamber.

摘要翻译： 衬底处理设备包括：处理室，被配置为处理多个衬底;衬底保持器，容纳在处理室内并且被构造成以垂直间隔的关系保持衬底;热绝缘部分，被配置为从下面支撑衬底保持器 在处理室内设置有用于围绕处理室内的基板容纳区域的加热单元，以及构造成将特定气体供给至少处理室内的绝热部分容纳区域的气体供给系统。

公开(公告)号：US09082694B2

公开(公告)日：2015-07-14

申请号：US14001510

申请日：2012-02-22

申请人： Shuhei Saido ,  Daisuke Hara ,  Takafumi Sasaki

发明人： Shuhei Saido ,  Daisuke Hara ,  Takafumi Sasaki

IPC分类号： C23C16/00 ,  H01L21/205 ,  C23C16/455 ,  C23C16/46 ,  H01L21/67 ,  H01L21/02

CPC分类号： H01L21/205 ,  C23C16/4557 ,  C23C16/45578 ,  C23C16/46 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/67109

摘要： A substrate processing apparatus includes: a processing chamber that accommodates a substrate; a heating portion that is provided so as to surround a accommodating region of the substrate within the processing chamber; a gas nozzle that is provided inside the heating portion and that supplies a processing gas to the accommodating region of the substrate; and a gas heating mechanism that is provided inside the heating portion and that supplies the processing gas from an upstream side of the gas nozzle into the gas nozzle. A ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas heating mechanism is larger than a ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas nozzle.

摘要翻译： 基板处理装置包括：容纳基板的处理室; 加热部，其设置成围绕处理室内的基板的容纳区域; 气体喷嘴，其设置在所述加热部内，并将处理气体供给到所述基板的容纳区域; 以及气体加热机构，其设置在加热部内部，并且将处理气体从气体喷嘴的上游侧供给到气体喷嘴中。 气体加热机构的气体流路中的流路周向长度与流路截面积的比率大于气体流路中的流路周向长度与流路截面积的比 的气体喷嘴。

公开(公告)号：US20130330930A1

公开(公告)日：2013-12-12

申请号：US14001510

申请日：2012-02-22

申请人： Shuhei Saido ,  Daisuke Hara ,  Takafumi Sasaki

发明人： Shuhei Saido ,  Daisuke Hara ,  Takafumi Sasaki

IPC分类号： H01L21/205

CPC分类号： H01L21/205 ,  C23C16/4557 ,  C23C16/45578 ,  C23C16/46 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/67109

摘要： A substrate processing apparatus includes: a processing chamber that accommodates a substrate; a heating portion that is provided so as to surround a accommodating region of the substrate within the processing chamber; a gas nozzle that is provided inside the heating portion and that supplies a processing gas to the accommodating region of the substrate; and a gas heating mechanism that is provided inside the heating portion and that supplies the processing gas from an upstream side of the gas nozzle into the gas nozzle. A ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas heating mechanism is larger than a ratio of a flow channel circumferential length to a flow channel cross-sectional area in a gas flow channel of the gas nozzle.

摘要翻译： 基板处理装置包括：容纳基板的处理室; 加热部，其设置成围绕处理室内的基板的容纳区域; 气体喷嘴，其设置在所述加热部内，并将处理气体供给到所述基板的容纳区域; 以及气体加热机构，其设置在加热部内部，并且将处理气体从气体喷嘴的上游侧供给到气体喷嘴中。 气体加热机构的气体流路中的流路周向长度与流路截面积的比率大于气体流路中的流路周向长度与流路截面积的比 的气体喷嘴。