公开(公告)号：US10141120B2

公开(公告)日：2018-11-27

申请号：US13033877

申请日：2011-02-24

申请人： Shunpei Yamazaki ,  Tamae Moriwaka ,  Kazutaka Kuriki ,  Mikio Yukawa

发明人： Shunpei Yamazaki ,  Tamae Moriwaka ,  Kazutaka Kuriki ,  Mikio Yukawa

IPC分类号： H01M6/04 ,  H01G11/26 ,  H01G11/46 ,  H01M4/131 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/36 ,  H01M4/587 ,  H01M4/62 ,  H01M10/0525 ,  H01M10/0561 ,  H01G11/28 ,  H01G11/32 ,  H01M4/02

摘要： The present invention relates to a power storage system including a negative electrode which has a crystalline silicon film provided as a negative electrode active material on the surface of a current collector and contains a conductive oxide in a surface layer section of the crystalline silicon film. Alternatively, the present invention relates to a method for manufacturing a power storage system, which includes the step of forming an amorphous silicon film on a current collector, adding a catalytic element for promoting crystallization of the amorphous silicon, onto a surface of the amorphous silicon film, heating the amorphous silicon film with the catalytic element added to crystallize the amorphous silicon film and thereby form a crystalline silicon film, and using the crystalline silicon film as a negative electrode active material layer.

公开(公告)号：US09929350B2

公开(公告)日：2018-03-27

申请号：US13405627

申请日：2012-02-27

申请人： Shunpei Yamazaki ,  Satoshi Seo ,  Nobuharu Ohsawa ,  Satoko Shitagaki ,  Hideko Inoue ,  Hiroshi Kadoma ,  Harue Osaka ,  Kunihiko Suzuki ,  Yasuhiko Takemura

发明人： Shunpei Yamazaki ,  Satoshi Seo ,  Nobuharu Ohsawa ,  Satoko Shitagaki ,  Hideko Inoue ,  Hiroshi Kadoma ,  Harue Osaka ,  Kunihiko Suzuki ,  Yasuhiko Takemura

IPC分类号： H01L29/08 ,  H01L35/24 ,  H01L51/00

CPC分类号： H01L51/0059 ,  H01L51/0067 ,  H01L2251/5384 ,  H01L2251/552

摘要： A light-emitting element includes a light-emitting layer including a guest, an n-type host and a p-type host between a pair of electrodes, where the difference between the energy difference between a triplet excited state and a ground state of the n-type host (or p-type host) and the energy difference between a triplet excited state and a ground state of the guest is 0.15 eV or more. Alternatively, in such a light-emitting element, the LUMO level of the n-type host is higher than the LUMO level of the guest by 0.1 eV or more, or the HOMO level of the p-type host is lower than the HOMO level of the guest by 0.1 eV or more.

公开(公告)号：US09887568B2

公开(公告)日：2018-02-06

申请号：US13023122

申请日：2011-02-08

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Yutaka Shionoiri

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Yutaka Shionoiri

IPC分类号： H02J7/00 ,  H02J7/14 ,  H02J17/00 ,  B60L11/00 ,  B60L11/18

CPC分类号： H02J7/0054 ,  B60L11/007 ,  B60L11/182 ,  B60L11/1833 ,  B60L2200/10 ,  B60L2200/12 ,  B60L2200/26 ,  H02J7/025 ,  H02J7/1407 ,  H02J17/00 ,  H02J50/10 ,  H02J50/12 ,  H02J50/20 ,  H02J50/40 ,  H02J50/90 ,  Y02T10/7005 ,  Y02T10/7072 ,  Y02T90/12 ,  Y02T90/121 ,  Y02T90/122 ,  Y02T90/125 ,  Y02T90/14

摘要： An object is to provide a moving object structure capable of reducing power loss caused when power is supplied from a power feeding device to a moving object by wireless communication. Another object is to provide a moving object structure capable of reducing the intensity of radio waves radiated to the surroundings. A moving object having a plurality of antennas receives radio waves transmitted from a power feeding device. At least one of the plurality of antennas is installed apart from the other antenna(s) of the moving object. Then, the radio waves transmitted from the power feeding device are received by all the plurality of antennas and converted into electric energy. Alternatively, the radio waves transmitted from the power feeding device are received by one or more selected from the plurality of antennas and converted into electric energy.

公开(公告)号：US09842859B2

公开(公告)日：2017-12-12

申请号：US12606340

申请日：2009-10-27

申请人： Jun Koyama ,  Shunpei Yamazaki

发明人： Jun Koyama ,  Shunpei Yamazaki

IPC分类号： G09G5/00 ,  H01L27/12

CPC分类号： H01L27/1225 ,  H01L27/1248

摘要： The driver circuit includes an inverter circuit having a first thin film transistor including a first oxide semiconductor film and a second transistor including a second oxide semiconductor film. The first thin film transistor and the second thin film transistor are enhancement transistors, in which a silicon oxide film including an OH group is provided on and in contact with the first oxide semiconductor film and the second oxide semiconductor film, and a silicon nitride film is provided on and in contact with the silicon oxide film.

公开(公告)号：US09781783B2

公开(公告)日：2017-10-03

申请号：US13442073

申请日：2012-04-09

申请人： Koichiro Kamata ,  Yutaka Shionoiri ,  Shunpei Yamazaki

发明人： Koichiro Kamata ,  Yutaka Shionoiri ,  Shunpei Yamazaki

IPC分类号： G06F3/038 ,  H05B33/08 ,  H01L27/32

CPC分类号： H05B33/0815 ,  H01L27/3244 ,  H01L2251/5361 ,  H05B33/0896

摘要： A highly reliable light-emitting device is provided. A lighting device or a display device with a high level of safety and without an exposed electrode is provided. A lighting device or a display device with high layout flexibility is provided. A light-emitting system or a display system to which the light-emitting device or the display device can be applied is provided. An electrode for receiving power and a rectifier circuit are provided in a light-emitting device including an organic EL element and arranged so as to face an electrode for transmitting power, whereby alternating-current power is supplied to the light-emitting device. The alternating-current power is rectified by the rectifier circuit to direct-current power so that the organic EL element in the light-emitting device is driven.

公开(公告)号：US09722212B2

公开(公告)日：2017-08-01

申请号：US13372087

申请日：2012-02-13

申请人： Shunpei Yamazaki

发明人： Shunpei Yamazaki

IPC分类号： H01L21/84 ,  H01L51/56 ,  H01L27/32

CPC分类号： H01L51/56 ,  H01L27/3246

摘要： The sizes of an evaporation mask used for a full-color light-emitting device and an evaporation mask used for a lighting device are different from each other. For this reason, separate evaporation masks are necessary, and in the case of processing a large number of substrates at once, many evaporation masks are prepared in accordance with the number of substrates to be processed, thereby increasing the total footprint of a manufacturing apparatus. One object of the present invention is to solve a problem of such an increase. A full-color display device can be manufactured by using a color filter and white light-emitting elements in combination. By this manner, a manufacturing line for the light-emitting device can have some steps in common with a manufacturing line for the lighting device; consequently, the total footprint of the manufacturing apparatus is reduced.

公开(公告)号：US09704446B2

公开(公告)日：2017-07-11

申请号：US13022879

申请日：2011-02-08

申请人： Shunpei Yamazaki ,  Jun Koyama

发明人： Shunpei Yamazaki ,  Jun Koyama

IPC分类号： G09G5/00 ,  G09G3/36

CPC分类号： G09G3/3614 ,  G09G3/3648 ,  G09G3/3655 ,  G09G3/3677 ,  G09G3/3688 ,  G09G2310/0297 ,  G09G2310/06 ,  G09G2310/08 ,  G09G2320/0214 ,  G09G2320/0247 ,  G09G2330/021 ,  G09G2330/023

摘要： An object is to reduce power consumption of a display device and to suppress deterioration of display quality. As a transistor provided for each pixel, a transistor including an oxide semiconductor layer is used. Note that off-state current of the transistor can be decreased when the oxide semiconductor layer is highly purified. Therefore, variation in the value of a data signal due to the off-state current of the transistor can be suppressed. That is, display deterioration (change) which occurs when writing frequency of the data signal to the pixel including the transistor is reduced (when a break period is lengthened) can be suppressed. In addition, flickers in display which generates when the frequency of an alternating-current driving signal supplied to a signal line in the break period is reduced can be suppressed.

公开(公告)号：US09546416B2

公开(公告)日：2017-01-17

申请号：US13221140

申请日：2011-08-30

申请人： Shunpei Yamazaki

发明人： Shunpei Yamazaki

IPC分类号： C30B25/00 ,  C23C14/08 ,  C23C14/54 ,  C23C14/56 ,  C30B29/16 ,  C30B25/10

CPC分类号： C23C14/08 ,  C23C14/086 ,  C23C14/541 ,  C23C14/564 ,  C30B25/10 ,  C30B25/105 ,  C30B29/16

摘要： An oxide semiconductor film with excellent crystallinity is formed. At the time when an oxide semiconductor film is formed, as a substrate is heated to a temperature of higher than or equal to a first temperature and lower than a second temperature, a part of the substrate having a typical length of 1 nm to 1 μm is heated to a temperature higher than or equal to the second temperature. Here, the first temperature means a temperature at which crystallization occurs with some stimulation, and the second temperature means a temperature at which crystallization occurs spontaneously without any stimulation. Further, the typical length is defined as the square root of a value obtained in such a manner that the area of the part is divided by the circular constant.

摘要翻译： 形成具有优异结晶度的氧化物半导体膜。 在形成氧化物半导体膜时，作为基板被加热至高于或等于第一温度且低于第二温度的温度时，具有典型长度为1nm至1μm的基板的一部分 被加热到高于或等于第二温度的温度。 这里，第一温度是指在某种刺激下发生结晶的温度，第二温度是指没有任何刺激自发发生结晶的温度。 此外，典型长度被定义为以使得部件的面积除以圆形常数的方式获得的值的平方根。

公开(公告)号：US09448433B2

公开(公告)日：2016-09-20

申请号：US12978770

申请日：2010-12-27

申请人： Shunpei Yamazaki ,  Jun Koyama ,  Yoshiharu Hirakata

发明人： Shunpei Yamazaki ,  Jun Koyama ,  Yoshiharu Hirakata

IPC分类号： G09G5/42 ,  G02F1/1335 ,  G09G3/34

CPC分类号： G09G3/3413 ,  G02F1/133345 ,  G02F1/1334 ,  G02F1/133514 ,  G02F1/133555 ,  G02F1/1337 ,  G02F1/134309 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/133302 ,  G02F2201/121 ,  G02F2201/123 ,  G02F2203/01 ,  G02F2203/04 ,  G09G3/2003 ,  G09G3/3406 ,  G09G3/3677 ,  G09G2300/0426 ,  G09G2310/0237 ,  G09G2310/08 ,  G09G2320/0247 ,  G09G2320/0261 ,  G09G2320/064 ,  G09G2320/0646 ,  G09G2320/103 ,  G09G2330/021 ,  G09G2330/022

摘要： An object is to provide a liquid crystal display device which can recognize image display even when the liquid crystal display device is used in a dim environment. In one pixel, a pixel electrode including both of a region where incident light through a liquid crystal layer is reflected and a transmissive region is provided, and image display can be performed in both modes: the reflective mode where external light is used as an illumination light source; and the transmissive mode where the backlight is used as an illumination light source. When there is external light with insufficient brightness, that is, in a dim environment, the backlight emits weak light and an image is displayed in the reflective mode, whereby image display can be performed.

摘要翻译： 本发明的目的是提供一种液晶显示装置，即使在液晶显示装置在昏暗的环境中使用时也能够识别图像显示。 在一个像素中，包括反射通过液晶层的入射光的区域和设置有透射区域的像素电极的像素电极，并且可以以两种模式执行图像显示：将外部光用作照明的反射模式 光源; 以及将背光用作照明光源的透射模式。 当存在亮度不足的外部光，即，在昏暗的环境中，背光发出弱光，并且以反射模式显示图像，由此可以执行图像显示。

公开(公告)号：US09437768B2

公开(公告)日：2016-09-06

申请号：US13615700

申请日：2012-09-14

申请人： Yoichiro Numasawa ,  Yasushi Maeda ,  Yoshikazu Hiura ,  Shunpei Yamazaki

发明人： Yoichiro Numasawa ,  Yasushi Maeda ,  Yoshikazu Hiura ,  Shunpei Yamazaki

IPC分类号： H01L31/044 ,  H01L31/072 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/0312

CPC分类号： H01L31/072 ,  H01L31/0312 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A photoelectric conversion device with low resistance loss and high conversion efficiency is provided. The photoelectric conversion device includes a first silicon semiconductor layer and a second silicon semiconductor layer between a pair of electrodes. The first silicon semiconductor layer is provided over one surface of a crystalline silicon substrate having one conductivity type and has a conductivity type opposite to that of the crystalline silicon substrate, and the second silicon semiconductor layer is provided on the other surface of the crystalline silicon substrate and has a conductivity type which is the same as that of the crystalline silicon substrate. Further, the first silicon semiconductor layer and the second silicon semiconductor layer each have a carrier concentration varying in the film thickness direction.

摘要翻译： 提供具有低电阻损耗和高转换效率的光电转换装置。 光电转换装置包括在一对电极之间的第一硅半导体层和第二硅半导体层。 第一硅半导体层设置在具有一种导电类型的结晶硅衬底的一个表面上，并且具有与晶体硅衬底相反的导电类型，并且第二硅半导体层设置在晶体硅衬底的另一个表面上 并且具有与晶体硅衬底相同的导电类型。 此外，第一硅半导体层和第二硅半导体层各自具有在膜厚度方向上变化的载流子浓度。