公开(公告)号：US20170038208A1

公开(公告)日：2017-02-09

申请号：US14408177

申请日：2012-08-31

Applicant: Shuwen Guo

Inventor： Shuwen Guo

IPC: G01C19/5691 ,  H01J37/32

CPC classification number: G01C19/5691 ,  H01J37/32

Abstract: The present invention relates to a micromachined hemispherical resonance gyroscope, which comprises a resonant layer, said resonant layer comprising a hemispherical shell which has a concave inner surface and an outer surface opposite to the inner surface, and top point of the hemispherical shell being its anchor point; several silicon hemispherical electrodes being arranged around said hemispherical shell, the silicon hemispherical electrodes including driving electrodes, equilibrium electrodes, signal detection electrodes and shielded electrodes, the shielded electrodes separating the driving electrodes and the equilibrium electrodes from the signal detection electrodes, the hemispherical shell and the several silicon spherical electrodes which surround the hemispherical shell constituting several capacitors; the resonant layer being made of polysilicon or silica or silicon oxide or diamond. The hemispherical resonance micromechanical gyroscope utilizes a processing method on the basis of silicon micromachining, which leads to small size and low production cost, as well as batch production capacity, meanwhile its sensitivity is independent of amplitude and its driving voltage could be very low, as a result its output noise could be significantly reduced, and its accuracy is better than the gyroscope products in the prior art.

Abstract translation: 微机械半球谐振陀螺仪技术领域本发明涉及一种微加工半球谐振陀螺仪，其包括谐振层，所述谐振层包括半球形外壳，其具有凹内表面和与内表面相对的外表面，半球壳的顶点为其锚 点; 所述半球形壳体周围布置有多个硅半球形电极，所述硅半球形电极包括驱动电极，平衡电极，信号检测电极和屏蔽电极，所述屏蔽电极将驱动电极和平衡电极与信号检测电极，半球壳和 围绕构成若干电容器的半球形壳体的几个硅球形电极; 谐振层由多晶硅或二氧化硅或氧化硅或金刚石制成。 半球谐振微机械陀螺仪采用硅微机械加工的方法，导致体积小，生产成本低，批量生产能力强，灵敏度与振幅无关，驱动电压可能非常低， 结果，其输出噪声可以显着降低，并且其精度优于现有技术中的陀螺仪产品。

公开(公告)号：US08656778B2

公开(公告)日：2014-02-25

申请号：US12982720

申请日：2010-12-30

Applicant: Shuwen Guo ,  Alexander Spivak ,  Anita Fink

Inventor： Shuwen Guo ,  Alexander Spivak ,  Anita Fink

IPC: G01P15/125

CPC classification number: G01P15/125 ,  G01P15/0802 ,  G01P2015/0814

Abstract: A system for determining in-plane acceleration of an object. The system includes an in-plane accelerometer with a substrate rigidly attached to an object, and a proof mass—formed from a single piece of material—movably positioned a predetermined distance above the substrate. The proof mass includes a plurality of electrode protrusions extending downward from the proof mass to form a gap of varying height between the proof mass and the substrate. The proof mass is configured to move in a direction parallel to the upper surfaces of each of the plurality of substrate electrodes when the object is accelerating, which results in a change in the area of the gap, and a change in capacitance between the substrate and the proof mass. The in-plane accelerometer can be fabricated using the same techniques used to fabricate an out-of-plane accelerometer and is suitable for high-shock applications.

Abstract translation: 一种用于确定物体的平面内加速度的系统。 该系统包括面内加速度计，其具有刚性地连接到物体的基底，以及由单个材料块质量形成的 - 可移动地定位在基底上方预定距离的检测体。 检测质量包括从检验质量块向下延伸的多个电极突起，以在检验质量块和衬底之间形成不同高度的间隙。 检测质量被配置为当物体加速时在平行于多个基板电极中的每一个的上表面的方向上移动，这导致间隙的面积的变化，以及基板和 证明质量。 平面内加速度计可以使用与制造平面外加速度计相同的技术制造，适用于高冲击应用。

公开(公告)号：US08627727B2

公开(公告)日：2014-01-14

申请号：US12839401

申请日：2010-07-19

Applicant: Odd Harald Steen Eriksen ,  Lawrence Joseph Stang ,  Shuwen Guo

Inventor： Odd Harald Steen Eriksen ,  Lawrence Joseph Stang ,  Shuwen Guo

IPC: G01B7/16 ,  G01L1/00 ,  B64C25/00

CPC classification number: G01L1/142 ,  B64D2045/008 ,  G01B7/22 ,  G01L5/0052

Abstract: A capacitive strain sensor for sensing strain of a structure. The sensor includes a first section attached to the structure at a first location and a second section attached to the structure at a second location. The first section includes a capacitor plate electrically isolated from the structure and the second section includes two electrically isolated capacitive plates, both of the plates being electrically isolated from the structure. A flexible connector connects the first section to the second section. The capacitor plate of the first section is separated from the two capacitive plates of the second section by at least one capacitive gap. When strain is experienced by the structure, a change occurs in the capacitive gap due to relative motion between the first and second sections.

Abstract translation: 一种用于感测结构应变的电容式应变传感器。 传感器包括在第一位置处附接到结构的第一部分和在第二位置附接到结构的第二部分。 第一部分包括与该结构电隔离的电容器板，并且第二部分包括两个电隔离的电容板，两个板与结构电隔离。 柔性连接器将第一部分连接到第二部分。 第一部分的电容器板通过至少一个电容间隙与第二部分的两个电容板分开。 当结构经受应变时，由于第一和第二部分之间的相对运动，在电容间隙中发生变化。

公开(公告)号：US20120167685A1

公开(公告)日：2012-07-05

申请号：US12982720

申请日：2010-12-30

Applicant: Shuwen Guo ,  Alexander Spivak ,  Anita Fink

Inventor： Shuwen Guo ,  Alexander Spivak ,  Anita Fink

IPC: G01P15/125

CPC classification number: G01P15/125 ,  G01P15/0802 ,  G01P2015/0814

Abstract: A system for determining in-plane acceleration of an object. The system includes an in-plane accelerometer with a substrate rigidly attached to an object, and a proof mass—formed from a single piece of material—movably positioned a predetermined distance above the substrate. The proof mass includes a plurality of electrode protrusions extending downward from the proof mass to form a gap of varying height between the proof mass and the substrate. The proof mass is configured to move in a direction parallel to the upper surfaces of each of the plurality of substrate electrodes when the object is accelerating, which results in a change in the area of the gap, and a change in capacitance between the substrate and the proof mass. The in-plane accelerometer can be fabricated using the same techniques used to fabricate an out-of-plane accelerometer and is suitable for high-shock applications.

Abstract translation: 一种用于确定物体的平面内加速度的系统。 该系统包括面内加速度计，其具有刚性地连接到物体的基底，以及由单个材料块质量形成的 - 可移动地定位在基底上方预定距离的检测体。 检测质量包括从检验质量块向下延伸的多个电极突起，以在检验质量块和衬底之间形成不同高度的间隙。 检测质量被配置为当物体加速时在平行于多个基板电极中的每一个的上表面的方向上移动，这导致间隙的面积的变化，以及基板和 证明质量。 平面内加速度计可以使用与制造平面外加速度计相同的技术制造，适用于高冲击应用。

公开(公告)号：US20100155866A1

公开(公告)日：2010-06-24

申请号：US12579123

申请日：2009-10-14

Applicant: Shuwen Guo ,  Odd Harald Steen Eriksen ,  David P. Potasek ,  Kimiko J. Childress

Inventor： Shuwen Guo ,  Odd Harald Steen Eriksen ,  David P. Potasek ,  Kimiko J. Childress

IPC: H01L29/84 ,  H01L21/30

CPC classification number: G01L9/0042 ,  C23C14/021 ,  C23C14/022 ,  C23C14/025 ,  C23C14/0682 ,  C23C14/5806 ,  C23C14/5846 ,  C23C14/5873 ,  G01L9/0054 ,  G01L9/008 ,  G01L19/0061 ,  G01L19/0069 ,  G01L19/0076 ,  G01L19/0084 ,  G01L19/0609 ,  G01L19/141 ,  G01L19/147 ,  G01L19/148 ,  H01L2224/05553 ,  H01L2224/45169 ,  H01L2224/48472 ,  H01L2224/81805 ,  H01L2224/83805 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/3025 ,  H01L2924/00

Abstract: A harsh environment transducer including a substrate having a first surface and a second surface, wherein the second surface is in communication with the environment. The transducer includes a device layer sensor means located on the substrate for measuring a parameter associated with the environment. The sensor means including a single crystal semiconductor material having a thickness of less than about 0.5 microns. The transducer further includes an output contact located on the substrate and in electrical communication with the sensor means. The transducer includes a package having an internal package space and a port for communication with the environment. The package receives the substrate in the internal package space such that the first surface of the substrate is substantially isolated from the environment and the second surface of the substrate is substantially exposed to the environment through the port. The transducer further includes a connecting component coupled to the package and a wire electrically connecting the connecting component and the output contact such that an output of the sensor means can be communicated. An external surface of the wire is substantially platinum, and an external surface of at least one of the output contact and the connecting component is substantially platinum.

Abstract translation: 一种恶劣环境换能器，包括具有第一表面和第二表面的基底，其中第二表面与环境连通。 换能器包括位于基板上的用于测量与环境有关的参数的装置层传感器装置。 传感器装置包括厚度小于约0.5微米的单晶半导体材料。 换能器还包括位于基板上并与传感器装置电连通的输出触点。 换能器包括具有内部封装空间和用于与环境通信的端口的封装。 该封装在内部封装空间中接收衬底，使得衬底的第一表面基本上与环境隔离，并且衬底的第二表面基本上通过端口暴露于环境。 传感器还包括耦合到封装件的连接部件和将连接部件和输出触头电连接的导线，使得传感器装置的输出可以被传送。 导线的外表面基本上是铂，并且输出触点和连接部件中的至少一个的外表面基本上是铂。

公开(公告)号：US07538401B2

公开(公告)日：2009-05-26

申请号：US11523214

申请日：2006-09-19

Applicant: Odd Harald Steen Eriksen ,  Kimiko J. Childress ,  Shuwen Guo

Inventor： Odd Harald Steen Eriksen ,  Kimiko J. Childress ,  Shuwen Guo

IPC: H01L29/84

CPC classification number: G01L9/0042 ,  C23C14/021 ,  C23C14/022 ,  C23C14/025 ,  C23C14/0682 ,  C23C14/5806 ,  C23C14/5846 ,  C23C14/5873 ,  G01L9/0054 ,  G01L9/008 ,  G01L19/0061 ,  G01L19/0069 ,  G01L19/0076 ,  G01L19/0084 ,  G01L19/0609 ,  G01L19/141 ,  G01L19/147 ,  G01L19/148 ,  H01L2224/05553 ,  H01L2224/45169 ,  H01L2224/48472 ,  H01L2224/81805 ,  H01L2224/83805 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/1461 ,  H01L2924/3025 ,  H01L2924/00

Abstract: A pressure sensor for use in a harsh environment including a substrate and a sensor die directly coupled to the substrate by a bond frame positioned between the substrate and the sensor die. The sensor die includes a generally flexible diaphragm configured to flex when exposed to a sufficient differential pressure thereacross. The sensor further includes a piezoelectric or piezoresistive sensing element at least partially located on the diaphragm such that the sensing element provides an electrical signal upon flexure of the diaphragm. The sensor also includes an connecting component electrically coupled to the sensing element at a connection location that is fluidly isolated from the diaphragm by the bond frame. The bond frame is made of materials and the connecting component is electrically coupled to the sensing element by the same materials of the bond frame.

Abstract translation: 一种用于恶劣环境的压力传感器，包括通过位于基板和传感器管芯之间的接合框架直接耦合到基板的基板和传感器管芯。 传感器管芯包括大体上柔性的膜片，其被配置为当暴露于其上的足够的压差时弯曲。 传感器还包括至少部分地位于隔膜上的压电或压阻感测元件，使得感测元件在隔膜弯曲时提供电信号。 该传感器还包括一个连接部件，该连接部件在连接位置处电耦合到感测元件，该连接部分通过接合框架与隔膜流体隔离。 接合框架由材料制成，并且连接部件通过粘结框架的相同材料电耦合到感测元件。

公开(公告)号：US06773951B2

公开(公告)日：2004-08-10

申请号：US10278611

申请日：2002-10-23

Applicant: Odd Harald Steen Eriksen ,  Shuwen Guo

Inventor： Odd Harald Steen Eriksen ,  Shuwen Guo

IPC: H01L2100

CPC classification number: H01L21/76254 ,  H01L21/7602 ,  Y10S438/931

Abstract: A method of preparing a semiconductor structure comprises: (a) providing a first material comprising (i) a first wafer comprising silicon, (ii) at least one SiC conversion layer obtained by converting a portion of the silicon to SiC, (iii) at least one layer of non-indigenous SiC applied to the conversion layer, and (iv) at least one oxide layer applied to the non-indigenous SiC layer; (b) implanting ions in a region of the non-indigenous SiC layer, thereby establishing an implant region therein which defines a first portion of the non-indigenous SiC layer and a second portion of the non-indigenous SiC layer; (c) providing at least one additional material comprising (i) a second wafer comprising silicon, and (ii) an oxide layer applied to a face of the second wafer; (d) bonding the oxide layer of the first material and oxide layer of the material to provide an assembly of the first material and second material; and (e) separating at the implant region the second portion of the non-indigenous SiC layer from the first portion of the non-indigenous SiC layer to provide. The resultant semiconductor structure comprises a base wafer which may be a Si wafer, an insulating oxide layer which may be SiO2 adjacent to the base wafer, and an active top layer of non-indigenous SiC. The semiconductor structure may be used to fabricate integrated electronics, pressure sensors, temperature sensors or other instrumentation which may be used in high temperature environments such as aircraft engines.

Abstract translation: 制备半导体结构的方法包括：（a）提供第一材料，其包括（i）包含硅的第一晶片，（ii）通过将硅的一部分转化为SiC而获得的至少一个SiC转换层，（iii） 至少一层非原生SiC施加到转化层，和（iv）施加到非本征SiC层的至少一个氧化物层;（b）在非本征SiC层的区域中注入离子，从而建立 其中限定非本地SiC层的第一部分和非本征SiC层的第二部分的植入区域;（c）提供至少一种附加材料，其包括（i）包含硅的第二晶片和（ii） ）施加到所述第二晶片的表面的氧化物层;（d）将所述第一材料的氧化物层和所述材料的氧化物层粘合以提供所述第一材料和第二材料的组合; 和（e）在植入区域处分离非本地SiC层的第二部分与非本征SiC层的第一部分以提供。 所得的半导体结构包括可以是Si晶片的基底晶片，可以与基底晶片相邻的SiO 2的绝缘氧化物层和非本征SiC的有源顶层。 半导体结构可用于制造集成的电子设备，压力传感器，温度传感器或其他可用于诸如飞机发动机的高温环境中的仪器。

公开(公告)号：US06566158B2

公开(公告)日：2003-05-20

申请号：US09932001

申请日：2001-08-17

Applicant: Odd Harald Steen Eriksen ,  Shuwen Guo

Inventor： Odd Harald Steen Eriksen ,  Shuwen Guo

IPC: H01L2100

CPC classification number: H01L21/76254 ,  H01L21/7602 ,  Y10S438/931

Abstract: A method of preparing a semiconductor using ion implantation comprises: (a) providing a first material comprising (i) a first Si wafer, (ii) at least one indigenous SiC layer, (iii) at least one non-indigenous SiC layer applied to the indigenous SiC layer, and (iv) at least one oxide layer applied to the non-indigenous SiC layer; (b) implanting ions in the non-indigenous SiC layer, thereby establishing an implant region which defines first and second portions of the non-indigenous SiC layer; (c) providing another material comprising (i) a second Si wafer, and (ii) an oxide layer applied to a face of the second wafer; (d) providing an assembly by bonding the oxide layers of the first material and the other material; and (e) separating the first and second portions of the non-indigenous SiC layer at the implant region.

Abstract translation: 使用离子注入制备半导体的方法包括：（a）提供第一材料，其包括（i）第一Si晶片，（ii）至少一个本征SiC层，（iii）至少一个非本征SiC层施加到 本地SiC层，和（iv）施加到非本征SiC层的至少一个氧化物层;（b）在非本征SiC层中注入离子，由此建立植入区域，其限定非本征SiC层的第一和第二部分， - 本土SiC层;（c）提供另外的材料，其包括（i）第二硅晶片，和（ii）施加到所述第二晶片的表面的氧化物层;（d）通过将所述第一晶片的氧化物层 材料和其他材料; 和（e）在植入区域处分离非本征SiC层的第一和第二部分。

公开(公告)号：US08141429B2

公开(公告)日：2012-03-27

申请号：US12804874

申请日：2010-07-30

Applicant: Shuwen Guo

Inventor： Shuwen Guo

IPC: G01L9/12

CPC classification number: G01L9/0075 ,  G01L19/04 ,  Y10T29/49002

Abstract: Disclosed are capacitive pressure probes or sensors for high temperature applications. The capacitive pressure sensors of the present invention include, inter alia, a sapphire diaphragm which is disposed within an interior sensing chamber of the probe housing and has a first electrode formed on a central portion thereof. The central portion of the diaphragm and the first electrode are adapted and configured to deflect in response to pressure variations encountered within an interior sensing chamber and by the pressure sensor. A sapphire substrate which has a second electrode formed thereon is fused to the sapphire diaphragm about its periphery to form a sapphire stack and to define a reference chamber therebetween. Prior to fusing the sapphire diaphragm to the sapphire substrate, all contact surfaces are chemically treated and prepared using plasma activation, so as to create a bonding layer and to reduce the temperature required for the fusion.

Abstract translation: 公开了用于高温应用的电容式压力探针或传感器。 本发明的电容式压力传感器尤其包括蓝宝石隔膜，蓝宝石隔膜设置在探头外壳的内部感测室内，并具有形成在其中心部分上的第一电极。 隔膜和第一电极的中心部分适于和构造成响应于在内部感测室和压力传感器内遇到的压力变化而偏转。 其上形成有第二电极的蓝宝石衬底在其周围与蓝宝石隔膜融合以形成蓝宝石叠层并在其间限定基准室。 在将蓝宝石隔膜熔合到蓝宝石基板之前，所有的接触表面都使用等离子体激活进行化学处理和制备，以便产生粘结层并降低融合所需的温度。

公开(公告)号：US20120012701A1

公开(公告)日：2012-01-19

申请号：US12839401

申请日：2010-07-19

Applicant: Odd Harald Steen Eriksen ,  Lawrence Joseph Stang ,  Shuwen Guo

Inventor： Odd Harald Steen Eriksen ,  Lawrence Joseph Stang ,  Shuwen Guo

IPC: B64C25/28 ,  G01B7/16

CPC classification number: G01L1/142 ,  B64D2045/008 ,  G01B7/22 ,  G01L5/0052

Abstract: A capacitive strain sensor for sensing strain of a structure. The sensor includes a first section attached to the structure at a first location and a second section attached to the structure at a second location. The first section includes a capacitor plate electrically isolated from the structure and the second section includes two electrically isolated capacitive plates, both of the plates being electrically isolated from the structure. A flexible connector connects the first section to the second section. The capacitor plate of the first section is separated from the two capacitive plates of the second section by at least one capacitive gap. When strain is experienced by the structure, a change occurs in the capacitive gap due to relative motion between the first and second sections.

Abstract translation: 一种用于感测结构应变的电容式应变传感器。 传感器包括在第一位置处附接到结构的第一部分和在第二位置附接到结构的第二部分。 第一部分包括与该结构电隔离的电容器板，第二部分包括两个电隔离的电容板，两个板与结构电隔离。 柔性连接器将第一部分连接到第二部分。 第一部分的电容器板通过至少一个电容间隙与第二部分的两个电容板分开。 当结构经受应变时，由于第一和第二部分之间的相对运动，在电容间隙中发生变化。