摘要:
A switching circuit and a DC-DC converter including the same are provided. The switching circuit includes an output terminal, a plurality of input terminals, and a plurality of switches configured to selectively connect the plurality of input terminals to the output terminal. The plurality of switches include a first switch directly connected to the output terminal and a plurality of second switches connecting the plurality of input terminals to the first switch. The first switch is implemented using a high-voltage transistor. Each of the second switches is implemented using a low-voltage transistor. A gate of the high-voltage transistor is at least two times longer than a gate of the low-voltage transistor. The DC-DC converter increases or decreases a signal selected from among a plurality of input signals input through the input terminals by a predetermined voltage level. Most of switches in the switching circuit are implemented using low-voltage transistors, thereby decreasing the area of the switching circuit.
摘要:
A voltage generator that prevents latch-up includes: a charge pump circuit that is controlled by first through third enable signals, boosts an internal power voltage generated from an external power voltage, and generates first through fourth voltages; a detector that detects the first through third voltages and generates first through third flag signals that go logic high when the first through third voltages reach predetermined respective voltage levels and maintain logic low when the voltages do not reach the predetermined respective voltage levels; and a charge pump controller that receives the first through third flag signals, and generates the first through third enable signals to have the first through fourth voltages sequentially generated. The voltage generator can prevent latch-up that may occur in a boosting mode or in a normal operation mode.
摘要:
A charge pump circuit and related method are provided. The charge pump circuit includes first, second and third voltage generation units, first and second control units, and a latch-up prevention unit. The first generation unit regulates a first output signal, the second generation unit boosts a second output signal, and the third generation unit boosts a third output signal in response to the first and second output signals. The first control unit is connected between the first generation unit and the third generation unit, and the second control unit is connected between the second generation unit and the third generation unit. The first and second control units block respective outputs of the first and second generation units during the boosting time for the second output signal. The latch-up prevention unit prevents a latch-up operation caused by a parasitic transistor until the third output signal is maintained at a third voltage.
摘要:
A switching circuit and a DC-DC converter including the same are provided. The switching circuit includes an output terminal, a plurality of input terminals, and a plurality of switches configured to selectively connect the plurality of input terminals to the output terminal. The plurality of switches include a first switch directly connected to the output terminal and a plurality of second switches connecting the plurality of input terminals to the first switch. The first switch is implemented using a high-voltage transistor. Each of the second switches is implemented using a low-voltage transistor. A gate of the high-voltage transistor is at least two times longer than a gate of the low-voltage transistor. The DC-DC converter increases or decreases a signal selected from among a plurality of input signals input through the input terminals by a predetermined voltage level. Most of switches in the switching circuit are implemented using low-voltage transistors, thereby decreasing the area of the switching circuit.
摘要:
A charge pump circuit and related method are provided. The charge pump circuit includes first, second and third voltage generation units, first and second control units, and a latch-up prevention unit. The first generation unit regulates a first output signal, the second generation unit boosts a second output signal, and the third generation unit boosts a third output signal in response to the first and second output signals. The first control unit is connected between the first generation unit and the third generation unit, and the second control unit is connected between the second generation unit and the third generation unit. The first and second control units block respective outputs of the first and second generation units during the boosting time for the second output signal. The latch-up prevention unit prevents a latch-up operation caused by a parasitic transistor until the third output signal is maintained at a third voltage.
摘要:
A voltage generator that prevents latch-up includes: a charge pump circuit that is controlled by first through third enable signals, boosts an internal power voltage generated from an external power voltage, and generates first through fourth voltages; a detector that detects the first through third voltages and generates first through third flag signals that go logic high when the first through third voltages reach predetermined respective voltage levels and maintain logic low when the voltages do not reach the predetermined respective voltage levels; and a charge pump controller that receives the first through third flag signals, and generates the first through third enable signals to have the first through fourth voltages sequentially generated. The voltage generator can prevent latch-up that may occur in a boosting mode or in a normal operation mode.
摘要:
The common voltage generator includes an operational amplifier and a plurality of switches. The operational amplifier is configured to amplify a difference between a first voltage and a second voltage and to output the amplified voltage as a common voltage. The plurality of switches are configured to transmit a third voltage and a fourth voltage as a power supply to the operational amplifier in a first voltage output mode and to transmit a fifth voltage and a sixth voltage as a power supply to the operational amplifier in a second voltage output mode.
摘要:
A memory cell includes a metal oxide semiconductor (MOS) capacitor including a gate coupled to a storage node and an electrode coupled to a synchronization control line. The MOS capacitor adds a coupling voltage to the gate based on a change in voltage on the synchronization control line. The coupling voltage may maintain the storage node within a predetermined range.
摘要:
The common voltage generator includes an operational amplifier and a plurality of switches. The operational amplifier is configured to amplify a difference between a first voltage and a second voltage and to output the amplified voltage as a common voltage. The plurality of switches are configured to transmit a third voltage and a fourth voltage as a power supply to the operational amplifier in a first voltage output mode and to transmit a fifth voltage and a sixth voltage as a power supply to the operational amplifier in a second voltage output mode.
摘要:
A source driver having a small layout area and low power consumption includes a signal generation block generating a plurality of pulse width modulation (PWM) signals and a plurality of staircase waveform grayscale voltage signals according to a digital code generated based on an oscillation signal and a channel driver. The channel driver divides latched video data into upper bits and lower bits, generates a plurality of switching signals using one PWM signal selected from among the plurality of PWM signals in response to the lower bits, outputs one staircase waveform grayscale voltage signal selected from among the plurality of staircase waveform grayscale voltage signals in response to the upper bits, and outputs a particular grayscale voltage level included in the one staircase waveform grayscale voltage signal in response to the plurality of switching signals.