公开(公告)号：US08686477B2

公开(公告)日：2014-04-01

申请号：US13558231

申请日：2012-07-25

申请人： Sohei Manabe ,  Jeong-Ho Lyu

发明人： Sohei Manabe ,  Jeong-Ho Lyu

IPC分类号： H01L27/148 ,  H01L29/768 ,  H01L31/062 ,  H01L31/113 ,  H01L27/146

CPC分类号： H01L27/14614 ,  H01L27/14607 ,  H01L27/14616 ,  H01L27/14689

摘要： Pixel array structures to provide a ground contact for a CMOS pixel cell. In an embodiment, an active area of a pixel cell includes a photodiode disposed in a first portion of an active area, where a second portion of the active area extends from a side of the first portion. The second portion includes a doped region to provide a ground contact for the active area. In another embodiment, the pixel cell includes a transistor to transfer the charge from the photodiode, where a gate of the transistor is adjacent to the second portion and overlaps the side of the first portion.

摘要翻译： 像素阵列结构为CMOS像素单元提供接地触点。 在一个实施例中，像素单元的有源区域包括设置在有源区域的第一部分中的光电二极管，其中有源区域的第二部分从第一部分的一侧延伸。 第二部分包括用于为有源区域提供接地触点的掺杂区域。 在另一个实施例中，像素单元包括用于从光电二极管转移电荷的晶体管，其中晶体管的栅极与第二部分相邻并与第一部分的一侧重叠。

公开(公告)号：US08426796B2

公开(公告)日：2013-04-23

申请号：US13619879

申请日：2012-09-14

申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes ,  Sohei Manabe

发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes ,  Sohei Manabe

IPC分类号： H01L27/146

CPC分类号： H04N5/35509 ,  H04N5/3559 ,  H04N5/3597 ,  H04N5/37452 ,  H04N5/376

摘要： An image sensor includes a pixel array, a bit line, a supplemental capacitance node line, and a control circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells different from the first group. The control circuit is coupled to the supplemental capacitance node line to selectively increase the potential at the FD node of each of the pixel cells of the second group by selectively asserting a FD boost signal on the supplemental capacitance node line.

摘要翻译： 图像传感器包括像素阵列，位线，补充电容节点线和控制电路。 像素阵列包括多个像素单元，每个像素单元包括浮动扩散（“FD”）节点和耦合以选择性地将图像电荷传送到FD节点的感光元件。 位线被耦合以选择性地进行从第一组像素单元输出的图像数据。 辅助电容节点线耦合到与第一组不同的第二组像素单元的FD节点。 控制电路通过选择性地在辅助电容节点线上确定FD升压信号来耦合到辅助电容节点线，以选择性地增加第二组的每个像素单元的FD节点的电位。

公开(公告)号：US08294077B2

公开(公告)日：2012-10-23

申请号：US12972188

申请日：2010-12-17

申请人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes ,  Sohei Manabe

发明人： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Howard E. Rhodes ,  Sohei Manabe

IPC分类号： H01L27/146

CPC分类号： H04N5/35509 ,  H04N5/3559 ,  H04N5/3597 ,  H04N5/37452 ,  H04N5/376

摘要： An image sensor includes a pixel array, a bit line, supplemental capacitance node line, and a supplemental capacitance circuit. The pixel array includes a plurality of pixel cells each including a floating diffusion (“FD”) node and a photosensitive element coupled to selectively transfer image charge to the FD node. The bit line is coupled to selectively conduct image data output from a first group of the pixel cells. The supplemental capacitance node line is coupled to the FD node of a second group of the pixel cells to selectively couple a supplemental capacitance to the FD nodes of the second group in response to a control signal. In various embodiments, the first and second group of pixel cells may be the same group or a different group of the pixel cells and may add a capacitive boost feature or a multi conversion gain feature.

摘要翻译： 图像传感器包括像素阵列，位线，补充电容节点线和补充电容电路。 像素阵列包括多个像素单元，每个像素单元包括浮动扩散（FD）节点和耦合以选择性地将图像电荷传送到FD节点的感光元件。 位线被耦合以选择性地进行从第一组像素单元输出的图像数据。 辅助电容节点线耦合到第二组像素单元的FD节点，以响应于控制信号选择性地将辅助电容耦合到第二组的FD节点。 在各种实施例中，第一和第二组像素单元可以是相同的组或像素单元的不同组，并且可以添加电容性升压特征或多转换增益特征。

公开(公告)号：US08228411B2

公开(公告)日：2012-07-24

申请号：US13327592

申请日：2011-12-15

申请人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

发明人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

IPC分类号： H04N3/14 ,  H04N5/335 ,  H01L31/062

CPC分类号： H01L27/14603 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641

摘要： A method of operation of a backside illuminated (BSI) pixel array includes acquiring an image signal with a first photosensitive region of a first pixel within the BSI pixel array. The image signal is generated in response to light incident upon a backside of the first pixel. The image signal acquired by the first photosensitive region is transferred to pixel circuitry of the first pixel disposed on a frontside of the first pixel opposite the backside. The pixel circuitry at least partially overlaps the first photosensitive region of the first pixel and extends over die real estate above a second photosensitive region of a second pixel adjacent to the first pixel such that the second pixel donates die real estate unused by the second pixel to the first pixel to accommodate larger pixel circuitry than would fit within the first pixel.

摘要翻译： 背面照明（BSI）像素阵列的操作方法包括用BSI像素阵列内的第一像素的第一感光区域获取图像信号。 响应于入射在第一像素的背面的光产生图像信号。 由第一感光区域获取的图像信号被传送到设置在与背面相对的第一像素的前侧上的第一像素的像素电路。 像素电路至少部分地与第一像素的第一光敏区域重叠，并且延伸超过与第一像素相邻的第二像素的第二光敏区域上方的裸片空间，使得第二像素将第二像素未使用的裸片空间提供给 第一像素以适应比装配在第一像素内的更大的像素电路。

公开(公告)号：US20120086844A1

公开(公告)日：2012-04-12

申请号：US13327592

申请日：2011-12-15

申请人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

发明人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

IPC分类号： H04N5/335

CPC分类号： H01L27/14603 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641

摘要： A method of operation of a backside illuminated (BSI) pixel array includes acquiring an image signal with a first photosensitive region of a first pixel within the BSI pixel array. The image signal is generated in response to light incident upon a backside of the first pixel. The image signal acquired by the first photosensitive region is transferred to pixel circuitry of the first pixel disposed on a frontside of the first pixel opposite the backside. The pixel circuitry at least partially overlaps the first photosensitive region of the first pixel and extends over die real estate above a second photosensitive region of a second pixel adjacent to the first pixel such that the second pixel donates die real estate unused by the second pixel to the first pixel to accommodate larger pixel circuitry than would fit within the first pixel.

摘要翻译： 背面照明（BSI）像素阵列的操作方法包括用BSI像素阵列内的第一像素的第一感光区域获取图像信号。 响应于入射在第一像素的背面的光产生图像信号。 由第一感光区域获取的图像信号被传送到设置在与背面相对的第一像素的前侧上的第一像素的像素电路。 像素电路至少部分地与第一像素的第一光敏区域重叠，并且延伸超过与第一像素相邻的第二像素的第二光敏区域上方的裸片空间，使得第二像素将第二像素未使用的裸片空间提供给 第一像素以适应比装配在第一像素内的更大的像素电路。

公开(公告)号：US20110284982A1

公开(公告)日：2011-11-24

申请号：US13198574

申请日：2011-08-04

申请人： Sohei Manabe

发明人： Sohei Manabe

IPC分类号： H01L31/0232

CPC分类号： H01L27/1469 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14698

摘要： Embodiments of a process comprising forming a pixel on a front side of a substrate, thinning the substrate, depositing a doped silicon layer on a backside of the thinned substrate, and diffusing a dopant from the doped silicon layer into the substrate. Embodiments of an apparatus comprising a pixel formed on a front side of a thinned substrate, a doped silicon layer formed on a backside of the thinned substrate, and a region in the thinned substrate, and near the backside, where a dopant has diffused from the doped silicon layer into the thinned substrate. Other embodiments are disclosed and claimed.

摘要翻译： 一种方法的实施方案包括在衬底的前侧形成像素，使衬底变薄，在掺杂硅衬底的背面沉积掺杂硅层，以及将掺杂剂从掺杂硅层扩散到衬底中。 包括形成在薄化衬底的前侧上的像素的装置的实施例，形成在薄化衬底的背面上的掺杂硅层，以及薄化衬底中的区域，以及靠近背面的掺杂剂，其中掺杂剂从 掺杂的硅层进入薄的衬底。 公开和要求保护其他实施例。

公开(公告)号：US20100164042A1

公开(公告)日：2010-07-01

申请号：US12347856

申请日：2008-12-31

申请人： Sohei Manabe

发明人： Sohei Manabe

IPC分类号： H01L31/00 ,  H01L31/18 ,  H01L27/146 ,  H01L21/70

CPC分类号： H01L27/1469 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14698

摘要： Embodiments of a process comprising forming a pixel on a front side of a substrate, thinning the substrate, depositing a doped silicon layer on a backside of the thinned substrate, and diffusing a dopant from the doped silicon layer into the substrate. Embodiments of an apparatus comprising a pixel formed on a front side of a thinned substrate, a doped silicon layer formed on a backside of the thinned substrate, and a region in the thinned substrate, and near the backside, where a dopant has diffused from the doped silicon layer into the thinned substrate. Other embodiments are disclosed and claimed.

摘要翻译： 一种方法的实施方案包括在衬底的前侧形成像素，使衬底变薄，在掺杂硅衬底的背面沉积掺杂硅层，以及将掺杂剂从掺杂硅层扩散到衬底中。 包括形成在薄化衬底的前侧上的像素的装置的实施例，形成在薄化衬底的背面上的掺杂硅层，以及薄化衬底中的区域，以及靠近背面的掺杂剂，其中掺杂剂从 掺杂的硅层进入薄的衬底。 公开和要求保护其他实施例。

公开(公告)号：US20090201395A1

公开(公告)日：2009-08-13

申请号：US12205746

申请日：2008-09-05

申请人： Sohei Manabe ,  Satyadev Nagaraia

发明人： Sohei Manabe ,  Satyadev Nagaraia

IPC分类号： H01L31/0216 ,  H04N5/335

CPC分类号： H04N5/335 ,  H01L27/1462 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H04N5/3572 ,  H04N5/369

摘要： A backside illuminated imaging sensor includes a semiconductor having an imaging pixel that includes a photodiode region, an insulator, and a silicide reflective layer. The photodiode region is formed in the frontside of the semiconductor substrate. The insulation layer is formed on the backside of the semiconductor substrate. The transparent electrode formed on the backside of the insulation layer. The transparent electrode allows light to be transmitted through a back surface of the semiconductor substrate such that when the transparent electrode is biased, carriers are formed in a region in the backside of the semiconductor substrate to reduce leakage current. ARC layers can be used to increase sensitivity of the sensor to selected wavelengths of light.

摘要翻译： 背面照明成像传感器包括具有包括光电二极管区域，绝缘体和硅化物反射层的成像像素的半导体。 光电二极管区域形成在半导体衬底的前侧。 绝缘层形成在半导体衬底的背面。 形成在绝缘层背面的透明电极。 透明电极允许光透射通过半导体衬底的背面，使得当透明电极被偏压时，在半导体衬底的背面的区域中形成载流子以减少漏电流。 ARC层可用于增加传感器对所选波长光的敏感度。

公开(公告)号：US20090200624A1

公开(公告)日：2009-08-13

申请号：US12053476

申请日：2008-03-21

申请人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

发明人： Tiejun Dai ,  Hsin-Chih Tai ,  Sohei Manabe ,  Hidetoshi Nozaki ,  Howard E. Rhodes

IPC分类号： H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14641

摘要： A backside illuminated (“BSI”) imaging sensor pixel includes a photodiode region and pixel circuitry. The photodiode region is disposed within a semiconductor die for accumulating an image charge in response to light incident upon a backside of the BSI imaging sensor pixel. The pixel circuitry includes transistor pixel circuitry disposed within the semiconductor die between a frontside of the semiconductor die and the photodiode region. At least a portion of the pixel circuitry overlaps the photodiode region.

摘要翻译： 背面照明（“BSI”）成像传感器像素包括光电二极管区域和像素电路。 光电二极管区域设置在半导体管芯内，用于响应于入射到BSI成像传感器像素的背面的光积累图像电荷。 像素电路包括设置在半导体管芯内的半导体管芯的前侧和光电二极管区域之间的晶体管像素电路。 像素电路的至少一部分与光电二极管区域重叠。

公开(公告)号：US20090200588A1

公开(公告)日：2009-08-13

申请号：US12199737

申请日：2008-08-27

申请人： Sohei Manabe ,  Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao ,  Yin Qian

发明人： Sohei Manabe ,  Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao ,  Yin Qian

IPC分类号： H01L31/112

CPC分类号： H01L27/14603 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14683

摘要： A backside illuminated imaging sensor includes a semiconductor having an imaging pixel that can include a photodiode region, an insulation layer, and a reflective layer. The photodiode is typically formed in the frontside of the semiconductor substrate. A surface shield layer can be formed on the frontside of the photodiode region. A light reflecting layer can be formed using silicided polysilicon on the frontside of the sensor. The photodiode region receives light from the back surface of the semiconductor substrate. When a portion of the received light propagates through the photodiode region to the light reflecting layer, the light reflecting layer reflects the portion of light received from the photodiode region towards the photodiode region. The silicided polysilicon light reflecting layer also forms a gate of a transistor for establishing a conductive channel between the photodiode region and a floating drain.

摘要翻译： 背面照明成像传感器包括具有可以包括光电二极管区域，绝缘层和反射层的成像像素的半导体。 光电二极管通常形成在半导体衬底的前侧。 表面屏蔽层可以形成在光电二极管区域的前侧。 可以使用传感器前侧的硅化多晶硅形成光反射层。 光电二极管区域从半导体衬底的后表面接收光。 当接收的光的一部分通过光电二极管区域传播到光反射层时，光反射层将从光电二极管区域接收的光的一部分朝向光电二极管区域反射。 硅化多晶硅光反射层还形成晶体管的栅极，用于在光电二极管区域和浮置漏极之间建立导电沟道。