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公开(公告)号:US20140008707A1
公开(公告)日:2014-01-09
申请号:US14022826
申请日:2013-09-10
申请人: Eric R. FOSSUM , Dae-Kil CHA , Young-Gu JIN , Yoon-Dong PARK , Soo-Jung HWANG
发明人: Eric R. FOSSUM , Dae-Kil CHA , Young-Gu JIN , Yoon-Dong PARK , Soo-Jung HWANG
IPC分类号: H01L31/112
CPC分类号: H01L31/112 , H01L27/14609 , H04N5/335 , H04N5/374
摘要: A high sensitivity image sensor including a pixel, the pixel including a single electron field effect transistor (SEFET), the SEFET including a first conductive type well in a second conductive type substrate, second conductive type source and drain regions in the well and a first conductive type gate region in the well between the source and the drain regions.
摘要翻译: 包括像素的高灵敏度图像传感器,包括单电子场效应晶体管(SEFET)的像素,在第二导电型衬底中包括第一导电类型阱的SEFET,以及阱中的第二导电类型源极和漏极区域 在源极和漏极区域之间的阱中的导电型栅极区域。
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公开(公告)号:US20100141821A1
公开(公告)日:2010-06-10
申请号:US12632989
申请日:2009-12-08
申请人: Eric R. Fossum , Young Gu Jin , Soo Jung Hwang , Dae Kil Cha , Yoon Dong Park , Jung Chak Ahn , Kyoung Sik Moon
发明人: Eric R. Fossum , Young Gu Jin , Soo Jung Hwang , Dae Kil Cha , Yoon Dong Park , Jung Chak Ahn , Kyoung Sik Moon
CPC分类号: H01L27/14812 , H01L27/14609 , H01L27/14641 , H01L27/14643 , H04N5/37452
摘要: An image sensor device may include a dual-gated charge storage region within a substrate. The dual-gated charge storage region includes first and second diodes within a common charge generating region. This charge generating region is configured to receive light incident on a surface of the image sensor device. The first and second diodes include respective first conductivity type regions responsive to first and second gate signals, respectively. These first and second gate signals are active during non-overlapping time intervals.
摘要翻译: 图像传感器装置可以包括衬底内的双门控电荷存储区域。 双门控电荷存储区域包括公共电荷产生区域内的第一和第二二极管。 该电荷产生区被配置为接收入射在图像传感器装置的表面上的光。 第一和第二二极管分别包括响应于第一和第二栅极信号的相应的第一导电类型区域。 这些第一和第二门信号在非重叠时间间隔期间是有效的。
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公开(公告)号:US20090243787A1
公开(公告)日:2009-10-01
申请号:US12382877
申请日:2009-03-26
申请人: Soo-Jung Hwang , Ha-young You , Deok-kee Kim , Jung-hun Sung , Young-chang Joo , Sung-yup Jung
发明人: Soo-Jung Hwang , Ha-young You , Deok-kee Kim , Jung-hun Sung , Young-chang Joo , Sung-yup Jung
IPC分类号: H01H85/04
CPC分类号: H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要: Provided are an electrical fuse device and a method of operating the same. The electrical fuse device may include a fuse link having a multi layer structure with at least two metal layers. The number of metal layers that are blown, from among the at least two metal layers, may vary according to either the duration of application of voltage or the strength of voltage applied.
摘要翻译: 提供一种电熔丝装置及其操作方法。 电熔丝器件可以包括具有至少两个金属层的多层结构的熔断体。 从至少两个金属层中吹出的金属层的数量可以根据施加电压的持续时间或施加的电压的强度而变化。
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公开(公告)号:US20090206978A1
公开(公告)日:2009-08-20
申请号:US12379347
申请日:2009-02-19
申请人: Soo-Jung Hwang , Deok-kee Kim , Jung-hun Sung , I-hun Song , Hyuk-soon Choi
发明人: Soo-Jung Hwang , Deok-kee Kim , Jung-hun Sung , I-hun Song , Hyuk-soon Choi
IPC分类号: H01H85/10
CPC分类号: G11C17/16 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要: Example embodiments relate to an electrical device, for example, to an electrical fuse device that includes a fuse link for linking a cathode and anode. An electrical device may include a cathode, an anode, and a fuse link. The fuse link may link the cathode and the anode. The fuse link may include a multi-metal layer structure. The fuse link may include a first metal layer including a first resistance, and a second metal layer stacked on the first metal layer and including a second resistance. The first resistance may be different from the second resistance. The fuse link may include a weak point as a region at which electrical blowing is performed easier than other regions of the fuse link.
摘要翻译: 示例性实施例涉及电气设备,例如电气熔断器件,其包括用于连接阴极和阳极的熔断体。 电气设备可以包括阴极,阳极和熔断体。 熔丝链可以连接阴极和阳极。 熔丝链可以包括多金属层结构。 熔丝连接件可以包括第一金属层和第二金属层,第一金属层包括第一电阻,第二金属层堆叠在第一金属层上并包括第二电阻。 第一阻力可能与第二阻力不同。 熔断体可以包括作为进行电吹送的区域的弱点比熔丝链的其它区域更容易。
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公开(公告)号:US08803273B2
公开(公告)日:2014-08-12
申请号:US14022826
申请日:2013-09-10
申请人: Eric R. Fossum , Dae-Kil Cha , Young-Gu Jin , Yoon-Dong Park , Soo-Jung Hwang
发明人: Eric R. Fossum , Dae-Kil Cha , Young-Gu Jin , Yoon-Dong Park , Soo-Jung Hwang
IPC分类号: H01L31/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/739
CPC分类号: H01L31/112 , H01L27/14609 , H04N5/335 , H04N5/374
摘要: A high sensitivity image sensor including a pixel, the pixel including a single electron field effect transistor (SEFET), the SEFET including a first conductive type well in a second conductive type substrate, second conductive type source and drain regions in the well and a first conductive type gate region in the well between the source and the drain regions.
摘要翻译: 包括像素的高灵敏度图像传感器,包括单电子场效应晶体管(SEFET)的像素,在第二导电型衬底中包括第一导电类型阱的SEFET,以及阱中的第二导电类型源极和漏极区域 在源极和漏极区域之间的阱中的导电型栅极区域。
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公开(公告)号:US08674475B2
公开(公告)日:2014-03-18
申请号:US12385391
申请日:2009-04-07
申请人: Deok-kee Kim , Jung-hun Sung , Sang-moo Choi , Soo-jung Hwang
发明人: Deok-kee Kim , Jung-hun Sung , Sang-moo Choi , Soo-jung Hwang
IPC分类号: H01L23/62
CPC分类号: H01L23/5252 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要: Provided are an antifuse and methods of operating and manufacturing the same. The antifuse may include first and second conductors separate from each other; a dielectric layer for an antifuse between the first and second conductors; and a diffusion layer between one of the first and second conductors and the dielectric layer.
摘要翻译: 提供反熔丝及其操作和制造方法。 反熔丝可以包括彼此分离的第一和第二导体; 用于第一和第二导体之间的反熔丝的电介质层; 以及在第一和第二导体之一和介电层之间的扩散层。
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公开(公告)号:US20110074989A1
公开(公告)日:2011-03-31
申请号:US12887258
申请日:2010-09-21
申请人: Eric R. Fossum , Soo-Jung Hwang , Young-Gu Jin , Yoon-Dong Park , Dae-Kil Cha
发明人: Eric R. Fossum , Soo-Jung Hwang , Young-Gu Jin , Yoon-Dong Park , Dae-Kil Cha
IPC分类号: H04N5/335 , H01L27/146
CPC分类号: H04N5/3696 , H01L27/14621 , H01L27/14645 , H04N5/2257 , H04N5/332
摘要: Provided is an image sensor having a depth sensor. The image sensor includes a substrate including a visible light region and a non-visible light region, a first well and a second well having a first conductivity type and in the non-visible light perception region, and a first gate and a second gate configured to receive voltages of opposite phases, respectively, and apply voltages to the first well and the second well, respectively.
摘要翻译: 具有深度传感器的图像传感器。 图像传感器包括:包括可见光区域和不可见光区域的基板,具有第一导电类型的第一阱和第二阱以及不可见光感知区域中的第一栅极和第二栅极配置 分别接收相位相的电压,并分别向第一阱和第二阱施加电压。
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公开(公告)号:US20100320515A1
公开(公告)日:2010-12-23
申请号:US12662327
申请日:2010-04-12
申请人: Eric R. Fossum , Dae-Kil Cha , Young-Gu Jin , Yoon-Dong Park , Soo-Jung Hwang
发明人: Eric R. Fossum , Dae-Kil Cha , Young-Gu Jin , Yoon-Dong Park , Soo-Jung Hwang
IPC分类号: H01L27/146
CPC分类号: H01L31/112 , H01L27/14609 , H04N5/335 , H04N5/374
摘要: A high sensitivity image sensor including a pixel, the pixel including a single electron field effect transistor (SEFET), the SEFET including a first conductive type well in a second conductive type substrate, second conductive type source and drain regions in the well and a first conductive type gate region in the well between the source and the drain regions.)
摘要翻译: 包括像素的高灵敏度图像传感器,包括单电子场效应晶体管(SEFET)的像素,在第二导电型衬底中包括第一导电类型阱的SEFET,以及阱中的第二导电类型源极和漏极区域 在源极和漏极区域之间的阱中的导电型栅极区)。
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公开(公告)号:US20090256624A1
公开(公告)日:2009-10-15
申请号:US12385391
申请日:2009-04-07
申请人: Deok-kee Kim , Jung-Hun Sung , Sang-moo Choi , Soo-Jung Hwang
发明人: Deok-kee Kim , Jung-Hun Sung , Sang-moo Choi , Soo-Jung Hwang
IPC分类号: H01L29/78 , H01L21/768 , H01H85/00 , H01L23/525
CPC分类号: H01L23/5252 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要: Provided are an antifuse and methods of operating and manufacturing the same. The antifuse may include first and second conductors separate from each other; a dielectric layer for an antifuse between the first and second conductors; and a diffusion layer between one of the first and second conductors and the dielectric layer.
摘要翻译: 提供反熔丝及其操作和制造方法。 反熔丝可以包括彼此分离的第一和第二导体; 用于第一和第二导体之间的反熔丝的电介质层; 以及在第一和第二导体之一和介电层之间的扩散层。
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公开(公告)号:US08976277B2
公开(公告)日:2015-03-10
申请号:US12887258
申请日:2010-09-21
申请人: Eric R. Fossum , Soo-Jung Hwang , Young-Gu Jin , Yoon-Dong Park , Dae-Kil Cha
发明人: Eric R. Fossum , Soo-Jung Hwang , Young-Gu Jin , Yoon-Dong Park , Dae-Kil Cha
IPC分类号: H04N3/14 , H04N5/369 , H01L27/146 , H04N5/225 , H04N5/33
CPC分类号: H04N5/3696 , H01L27/14621 , H01L27/14645 , H04N5/2257 , H04N5/332
摘要: Provided is an image sensor having a depth sensor. The image sensor includes a substrate including a visible light region and a non-visible light region, a first well and a second well having a first conductivity type and in the non-visible light perception region, and a first gate and a second gate configured to receive voltages of opposite phases, respectively, and apply voltages to the first well and the second well, respectively.
摘要翻译: 具有深度传感器的图像传感器。 图像传感器包括:包括可见光区域和不可见光区域的基板,具有第一导电类型的第一阱和第二阱以及不可见光感知区域中的第一栅极和第二栅极配置 分别接收相位相的电压,并分别向第一阱和第二阱施加电压。
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