公开(公告)号：US07769066B2

公开(公告)日：2010-08-03

申请号：US11600604

申请日：2006-11-15

申请人： Arpan Chakraborty ,  Monica Hansen ,  Steven Denbaars ,  Shuji Nakamura ,  George Brandes

发明人： Arpan Chakraborty ,  Monica Hansen ,  Steven Denbaars ,  Shuji Nakamura ,  George Brandes

IPC分类号： H01S5/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/2004 ,  H01S5/3406

摘要： A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation.

摘要翻译： 一种激光二极管及其制造方法，其中激光二极管通常包括在GaN n型接触层上的InGaN柔性层和在柔性层上的AlGaN / GaN n型应变超晶格（SLS）。 n型GaN分离限制异质结构（SCH）在所述n型SLS上，并且InGaN多量子阱（MQW）有源区在n型SCH上。 在MQW有源区上的GaN p型SCH，AlGaN / GaN p型SLS在p型SCH上，p型GaN接触层在p型SLS上。 顺应层具有与不具有柔顺层的激光二极管相比，n型接触层和n型SLS之间的应变的In百分比。 因此，n型SLS可以以增加的Al百分数生长以增加折射率。 这与其他功能一起允许降低阈值电流和电压操作。

公开(公告)号：US20070252164A1

公开(公告)日：2007-11-01

申请号：US11676999

申请日：2007-02-20

申请人： Hong Zhong ,  John Kaeding ,  Rajat Sharma ,  James Speck ,  Steven DenBaars ,  Shuji Nakamura

发明人： Hong Zhong ,  John Kaeding ,  Rajat Sharma ,  James Speck ,  Steven DenBaars ,  Shuji Nakamura

IPC分类号： H01L33/00 ,  H01L21/00 ,  H01L29/06

CPC分类号： H01L31/0236 ,  C30B25/186 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02647 ,  H01L21/02658 ,  H01L29/2003 ,  H01L29/778 ,  H01L31/18 ,  H01L33/0075 ,  Y02E10/50

摘要： A method of fabricating an optoelectronic device, comprising growing an active layer of the device on an oblique surface of a suitable material, wherein the oblique surface comprises a facetted surface. The present invention also discloses a method of fabricating the facetted surfaces. One fabrication process comprises growing an epitaxial layer on a suitable material, etching the epitaxial layer through a mask to form the facets having a specific crystal orientation, and depositing one or more active layers on the facets. Another method comprises growing a layer of material using a lateral overgrowth technique to produce a facetted surface, and depositing one or more active layers on the facetted surfaces. The facetted surfaces are typically semipolar planes.

摘要翻译： 一种制造光电器件的方法，包括在合适材料的倾斜表面上生长所述器件的有源层，其中所述倾斜表面包括刻面。 本发明还公开了一种制造分面表面的方法。 一个制造工艺包括在合适的材料上生长外延层，通过掩模蚀刻外延层以形成具有特定晶体取向的刻面，以及在该刻面上沉积一个或多个活性层。 另一种方法包括使用横向过度生长技术生长材料层以产生刻面，以及在刻面上沉积一个或多个活性层。 分面表面通常是半极性平面。

公开(公告)号：US20070126023A1

公开(公告)日：2007-06-07

申请号：US11670332

申请日：2007-02-01

申请人： Benjamin Haskell ,  Michael Craven ,  Paul Fini ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

发明人： Benjamin Haskell ,  Michael Craven ,  Paul Fini ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

IPC分类号： H01L33/00

CPC分类号： C30B29/406 ,  C30B25/02 ,  C30B29/403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： Lateral epitaxial overgrowth (LEO) of non-polar gallium nitride (GaN) films results in significantly reduced defect density.

摘要翻译： 非极性氮化镓（GaN）膜的横向外延生长（LEO）导致显着降低的缺陷密度。

公开(公告)号：US20060269390A1

公开(公告)日：2006-11-30

申请号：US11483387

申请日：2006-07-06

申请人： Shuji Nakamura ,  Steven DenBaars ,  Max Batres ,  Michael Coulter

发明人： Shuji Nakamura ,  Steven DenBaars ,  Max Batres ,  Michael Coulter

IPC分类号： B65G49/07

CPC分类号： H01L21/67103 ,  H01L21/68771

摘要： A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic organic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.

公开(公告)号：US20060163586A1

公开(公告)日：2006-07-27

申请号：US11042030

申请日：2005-01-24

申请人： Steven Denbaars ,  Shuji Nakamura ,  Max Batres

发明人： Steven Denbaars ,  Shuji Nakamura ,  Max Batres

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/145 ,  H01L33/22 ,  H01L33/405

摘要： An LED having a p-type layer of material with an associated p-contact, an n-type layer of material with an associated n-contact and an active region between the p-type layer and the n-type layer, includes a confinement structure that is formed within one of the p-type layer of material and the n-type layer of material. The confinement structure is generally aligned with the contact on the top and primary emission surface of the LED and substantially prevents the emission of light from the area of the active region that is coincident with the area of the confinement structure and the top-surface contact. The LED may include a roughened emitting-side surface to further enhance light extraction.

公开(公告)号：US20060008941A1

公开(公告)日：2006-01-12

申请号：US10537385

申请日：2003-07-15

申请人： Benjamin Haskell ,  Paul Fini ,  Shigemasa Matsuda ,  Michael Craven ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

发明人： Benjamin Haskell ,  Paul Fini ,  Shigemasa Matsuda ,  Michael Craven ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

IPC分类号： H01L21/00

CPC分类号： C30B25/02 ,  C30B29/40 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02587 ,  H01L21/02609 ,  H01L21/0262

摘要： Highly planar non-polar a-plane GaN films are grown by hydride vapor phase epitaxy (HVPE). The resulting films are suitable for subsequent device regrowth by a variety of growth techniques

摘要翻译： 通过氢化物气相外延（HVPE）生长高平面非极性a面GaN膜。 所得到的膜适合于通过各种生长技术的后续装置再生长

公开(公告)号：US20050245095A1

公开(公告)日：2005-11-03

申请号：US11140893

申请日：2005-05-31

申请人： Benjamin Haskell ,  Melvin McLaurin ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

发明人： Benjamin Haskell ,  Melvin McLaurin ,  Steven DenBaars ,  James Speck ,  Shuji Nakamura

IPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/00 ,  H01L21/20 ,  H01L21/205 ,  H01L21/31 ,  H01L21/469

CPC分类号： C30B25/02 ,  C30B29/40 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02647

摘要： A method of growing highly planar, fully transparent and specular m-plane gallium nitride (GaN) films. The method provides for a significant reduction in structural defect densities via a lateral overgrowth technique. High quality, uniform, thick m-plane GaN films are produced for use as substrates for polarization-free device growth.

摘要翻译： 生长高度平面，完全透明和镜面的m面氮化镓（GaN）膜的方法。 该方法通过侧向过度生长技术显着降低结构缺陷密度。 制造高品质，均匀，厚的m面GaN膜用作无极化器件生长的衬底。

公开(公告)号：US08679876B2

公开(公告)日：2014-03-25

申请号：US12826305

申请日：2010-06-29

申请人： Arpan Chakraborty ,  Monica Hansen ,  Steven Denbaars ,  Shuji Nakamura ,  George Brandes

发明人： Arpan Chakraborty ,  Monica Hansen ,  Steven Denbaars ,  Shuji Nakamura ,  George Brandes

IPC分类号： H01L21/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/2004 ,  H01S5/3406

摘要： A laser diode and method for fabricating same, wherein the laser diode generally comprises an InGaN compliance layer on a GaN n-type contact layer and an AlGaN/GaN n-type strained super lattice (SLS) on the compliance layer. An n-type GaN separate confinement heterostructure (SCH) is on said n-type SLS and an InGaN multiple quantum well (MQW) active region is on the n-type SCH. A GaN p-type SCH on the MQW active region, an AlGaN/GaN p-type SLS is on the p-type SCH, and a p-type GaN contact layer is on the p-type SLS. The compliance layer has an In percentage that reduces strain between the n-type contact layer and the n-type SLS compared to a laser diode without the compliance layer. Accordingly, the n-type SLS can be grown with an increased Al percentage to increase the index of refraction. This along with other features allows for reduced threshold current and voltage operation.

摘要翻译： 一种激光二极管及其制造方法，其中激光二极管通常包括在GaN n型接触层上的InGaN柔性层和在柔性层上的AlGaN / GaN n型应变超晶格（SLS）。 n型GaN分离限制异质结构（SCH）在所述n型SLS上，并且InGaN多量子阱（MQW）有源区在n型SCH上。 在MQW有源区上的GaN p型SCH，AlGaN / GaN p型SLS在p型SCH上，p型GaN接触层在p型SLS上。 顺应层具有与不具有柔顺层的激光二极管相比，n型接触层和n型SLS之间的应变的In百分比。 因此，n型SLS可以以增加的Al百分数生长以增加折射率。 这与其他功能一起允许降低阈值电流和电压操作。

公开(公告)号：US08372204B2

公开(公告)日：2013-02-12

申请号：US11483387

申请日：2006-07-06

申请人： Shuji Nakamura ,  Steven DenBaars ,  Max Batres ,  Michael Coulter

发明人： Shuji Nakamura ,  Steven DenBaars ,  Max Batres ,  Michael Coulter

IPC分类号： H01L21/00 ,  C23C14/00 ,  C23C16/00

CPC分类号： H01L21/67103 ,  H01L21/68771

摘要： A susceptor for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers is disclosed. The susceptor comprises a base structure made of a material having low thermal conductivity at high temperature, and has one or more plate holes to house heat transfer plugs. The plugs are made of a material with high thermal conductivity at high temperatures to transfer heat to the semiconductor wafers. A metalorganic chemical vapor deposition reactor is also disclosed utilizing a susceptor according to the present invention.

摘要翻译： 公开了一种用于在晶片上的外延层生长期间将半导体晶片保持在MOCVD反应器中的基座。 感受体包括由在高温下具有低导热性的材料制成的基座结构，并且具有一个或多个用于容纳传热塞的板孔。 插头由高温下具有高导热性的材料制成，以将热量传递到半导体晶片。 还公开了一种利用根据本发明的基座的金属有机化学气相沉积反应器。

公开(公告)号：US08366830B2

公开(公告)日：2013-02-05

申请号：US10382198

申请日：2003-03-04

申请人： Shuji Nakamura ,  Steven DenBaars ,  Max Batres ,  Michael Coulter

发明人： Shuji Nakamura ,  Steven DenBaars ,  Max Batres ,  Michael Coulter

IPC分类号： H01L21/00 ,  C23C14/00 ,  C23C16/00

CPC分类号： C23C16/4584 ,  C23C16/4581 ,  C23C16/46 ,  C30B25/10 ,  C30B25/12

摘要： The present invention discloses a susceptor mounting assembly for holding semiconductor wafers in an MOCVD reactor during growth of epitaxial layers on the wafers, that is particularly adapted for mounting a susceptor in an inverted type reactor chamber. It includes a tower having an upper and lower end with the upper end mounted to the top inside surface of the reactor chamber and a susceptor is arranged at the tower's lower end. Semiconductor wafers are held adjacent to the susceptor such that heat from the susceptor passes into wafers. A second embodiment of a susceptor mounting assembly according to the invention also comprises a tower having an upper and lower end. The tower's upper end is mounted to the top inside surface of the reactor chamber. A susceptor is housed within a cup and the cup is mounted to the tower's lower end.

摘要翻译： 本发明公开了一种用于在晶圆上生长外延层期间将半导体晶片保持在MOCVD反应器中的基座安装组件，其特别适用于将基座安装在倒置型反应室中。 它包括具有上端和下端的塔，其上端安装到反应室的顶部内表面，并且基座设置在塔的下端。 半导体晶片被保持在基座附近，使得来自基座的热量进入晶片。 根据本发明的基座安装组件的第二实施例还包括具有上端和下端的塔。 塔的上端安装在反应室的顶部内表面。 托架被容纳在一个杯子内，杯子安装在塔的下端。