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公开(公告)号：US08597538B2
公开(公告)日：2013-12-03
申请号：US13133857
申请日：2009-12-21
IPC分类号： C09K5/00
CPC分类号： B28D5/007 , Y02P70/179 , Y10T83/0443
摘要： The invention provides a composition for slicing a substrate using a wire saw wherein the composition comprises a liquid carrier and an abrasive. The invention further provides methods of slicing a substrate using a wire saw and a composition.
摘要翻译： 本发明提供一种用于使用线锯切割基底的组合物，其中所述组合物包含液体载体和研磨剂。 本发明还提供了使用线锯和组合物对衬底进行切片的方法。
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公开(公告)号：US20110303210A1
公开(公告)日：2011-12-15
申请号：US13139017
申请日：2009-12-21
申请人： Steven Grumbine , Nevin Naguib Sant
发明人： Steven Grumbine , Nevin Naguib Sant
IPC分类号： B28D5/00
CPC分类号： B28D5/045 , B28D5/007 , B28D5/0076 , C09K3/1463 , Y02P70/179
摘要： The present invention provides a wiresaw cutting method comprising cutting a workpiece with a wiresaw while applying an aqueous cutting fluid to the wiresaw from a recirculating reservoir of cutting fluid, monitoring at least one of a chemical property, a physical property, or both, and adjusting the chemical composition of the cutting fluid while cutting the workpiece to maintain the property being monitored. The present invention additionally provides an apparatus to perform the inventive method.
摘要翻译： 本发明提供了一种线锯切割方法，其包括：在从切屑流体的再循环储存器中向线锯施加水性切削液的同时用线锯切割工件，监测化学性质，物理特性或两者中的至少一个，并调整 在切割工件时切削液的化学成分保持被监测的性能。 本发明另外提供了一种执行本发明方法的装置。
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公开(公告)号：US20080057715A1
公开(公告)日：2008-03-06
申请号：US11673518
申请日：2007-02-09
IPC分类号： H01L21/302
CPC分类号： H01L21/31053 , C09G1/02 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing system for polishing a substrate comprising (a) a polishing component selected from an abrasive, a polishing pad, or both an abrasive and a polishing pad, (b) an aqueous carrier, and (c) the halogen adduct resulting from the reaction of (1) an oxidizing agent selected from the group consisting of iodine, bromine, and a combination thereof, and (2) a carbon acid having a pKa of about 3 to about 14, wherein the halogen adduct is present in a concentration of about 0.01 mM or more in the aqueous carrier. The invention also provides a method of polishing a substrate comprising (i) providing the aforementioned chemical-mechanical polishing system, (ii) contacting the substrate with the polishing system, and (iii) abrading at least a portion of the surface of the substrate with the polishing system to polish the substrate,
摘要翻译： 本发明提供了一种用于抛光衬底的化学机械抛光系统，其包括（a）选自研磨剂，抛光垫或研磨剂和抛光垫两者的抛光组分，（b）水性载体，和（c） 由（1）选自碘，溴及其组合的氧化剂的反应产生的卤素加合物，和（2）pKa为约3至约14的碳酸，其中卤素加合物为 在水性载体中以约0.01mM或更高的浓度存在。 本发明还提供了一种抛光衬底的方法，其包括（i）提供上述化学机械抛光系统，（ii）使衬底与抛光系统接触，和（iii）研磨衬底表面的至少一部分， 抛光系统对基材进行抛光，
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公开(公告)号：US20060030158A1
公开(公告)日：2006-02-09
申请号：US11235765
申请日：2005-09-26
IPC分类号： B24B1/00 , C09K3/14 , H01L21/461
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , C09K3/1463 , C23F3/04 , C23F3/06
摘要： A composition suitable for tantalum chemical-mechanical polishing (CMP) comprises an abrasive, an organic oxidizer, and a liquid carrier therefor. The organic oxidizer has a standard redox potential (E0) of not more than about 0.5 V relative to a standard hydrogen electrode. The oxidized form comprises at least one pi-conjugated ring, which includes at least one heteroatom directly attached to the ring. The heteroatom can be a N, O, S or a combination thereof. In a method embodiment, a CMP composition comprising an abrasive, and organic oxidizer having an E0 of not more than about 0.7 V relative to a standard hydrogen electrode, and a liquid carrier therefor, is utilized to polish a tantalum-containing surface of a substrate, by abrading the surface of the substrate with the composition, preferably with the aid of a polishing pad.
摘要翻译： 适用于钽化学机械抛光（CMP）的组合物包括研磨剂，有机氧化剂和用于其的液体载体。 有机氧化剂相对于标准氢电极具有不超过约0.5V的标准氧化还原电位（E 0 SUP 0）。 氧化形式包含至少一个π-共轭环，其包括至少一个直接连接在环上的杂原子。 杂原子可以是N，O，S或它们的组合。 在方法实施方案中，使用包含磨料和相对于标准氢电极不超过约0.7V的E 0有机氧化剂的CMP组合物及其液体载体来抛光 通过用组合物研磨基底的表面，优选借助于抛光垫，将基底的含钽表面。
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5.发明授权Wiresaw apparatus and method for continuous removal of magnetic impurties during wiresaw cutting 失效线锯切割期间连续去除磁性损伤的焊线装置和方法公开(公告)号：US08636560B2
公开(公告)日：2014-01-28
申请号：US13133784
申请日：2009-12-21
IPC分类号： B28D1/08
CPC分类号： B28D5/007 , Y02P70/179
摘要： The invention provides a method and apparatus for removing magnetic or magnetized contaminants from a wiresaw cutting slurry during a wiresaw cutting process. The apparatus comprises a recirculating slurry dispensing system that defines the slurry flow pathway. The recirculating dispensing slurry system comprises a magnetic separator for removing magnetic or magnetizable contaminants from the slurry, wherein the purified slurry is discharged back into recirculation within the recirculating slurry dispensing system.
摘要翻译： 本发明提供了一种在线锯切割过程中从线锯切割浆料中去除磁性或磁化污染物的方法和装置。 该装置包括限定浆料流动路径的再循环浆料分配系统。 循环分配浆料系统包括用于从浆料中除去磁性或可磁化污染物的磁分离器，其中将经纯化的浆料排出回到再循环浆料分配系统内的再循环中。
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公开(公告)号：US07776230B2
公开(公告)日：2010-08-17
申请号：US11673518
申请日：2007-02-09
IPC分类号： C03C15/00
CPC分类号： H01L21/31053 , C09G1/02 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing system for polishing a substrate comprising (a) a polishing component selected from an abrasive, a polishing pad, or both an abrasive and a polishing pad, (b) an aqueous carrier, and (c) the halogen adduct resulting from the reaction of (1) an oxidizing agent selected from the group consisting of iodine, bromine, and a combination thereof, and (2) a carbon acid having a pKa of about 3 to about 14, wherein the halogen adduct is present in a concentration of about 0.01 mM or more in the aqueous carrier. The invention also provides a method of polishing a substrate comprising (i) providing the aforementioned chemical-mechanical polishing system, (ii) contacting the substrate with the polishing system, and (iii) abrading at least a portion of the surface of the substrate with the polishing system to polish the substrate.
摘要翻译： 本发明提供了一种用于抛光衬底的化学机械抛光系统，其包括（a）选自研磨剂，抛光垫或研磨剂和抛光垫两者的抛光组分，（b）水性载体，和（c） 由（1）选自碘，溴及其组合的氧化剂的反应产生的卤素加合物，和（2）pKa为约3至约14的碳酸，其中卤素加合物为 在水性载体中以约0.01mM或更高的浓度存在。 本发明还提供了一种抛光衬底的方法，其包括（i）提供上述化学机械抛光系统，（ii）使衬底与抛光系统接触，和（iii）研磨衬底表面的至少一部分， 抛光系统抛光底物。
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公开(公告)号：US20090126713A1
公开(公告)日：2009-05-21
申请号：US12317254
申请日：2008-12-19
IPC分类号： B28D1/08 , C10M169/04 , C10M145/40 , C10M149/10 , C10M145/04 , C10M125/26 , C10M155/02 , C10M149/20
CPC分类号： B28D5/007 , B28D1/08 , C09K3/1463 , C10M125/08 , C10M173/02 , C10M2201/061 , C10M2201/10 , C10M2209/04 , C10M2209/12 , C10M2217/028 , C10N2240/401 , Y02P70/179
摘要： A wiresaw cutting fluid composition of the present invention comprises about 25 to about 75% by weight of a particulate abrasive suspended in an aqueous carrier containing a polymeric viscosity modifier that comprises a polymer including a majority of non-ionic monomer units (preferably 100 mol % non-ionic monomer units), has a number average molecular weight (Mn) of at least about 5 kDa, and is present in the composition at a concentration sufficient to provide a Brookfield viscosity for the composition in the range of about 50 to about 1000 cP, e.g., 50 to about 700 cP, at about 25° C. at a spindle rotation rate of about 60 rpm. In one embodiment, the viscosity modifier comprises a polymer having a weight average molecular weight (Mw) of at least about 200 kDa. When a viscosity modifier of 200 kDa or greater Mw is utilized, a preferred wiresaw cutting method the cutting fluid is circulated and applied by pumps and nozzles operating at a relatively low shear rate of not more than about 104 s−1.
摘要翻译： 本发明的线切割液组合物包含约25至约75重量％的悬浮在含有载体的水性载体中的颗粒磨料，所述颗粒磨料包含聚合物粘度调节剂，其包含大部分非离子单体单元的聚合物（优选为100摩尔％ 非离子单体单元）具有至少约5kDa的数均分子量（Mn），并且以足以提供组合物的Brookfield粘度在约50至约1000范围内的浓度存在于组合物中 cP，例如50至约700cP，在约25℃下以约60rpm的主轴转速进行。 在一个实施方案中，粘度调节剂包含重均分子量（Mw）为至少约200kDa的聚合物。 当使用200kDa或更大的Mw的粘度调节剂时，优选的切线切割方法是通过以不大于约104s -1的较低剪切速率操作的泵和喷嘴循环施加切削液。
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公开(公告)号：US20070219104A1
公开(公告)日：2007-09-20
申请号：US11384538
申请日：2006-03-20
申请人： Steven Grumbine , Renjie Zhou , Zhan Chen , Phillip Carter
发明人： Steven Grumbine , Renjie Zhou , Zhan Chen , Phillip Carter
IPC分类号： B08B7/00
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , C23F3/04 , C23F3/06
摘要： The present invention provides a chemical-mechanical polishing (CMP) composition comprising an amino compound, a radical-forming oxidizing agent, a radical trapping agent capable of inhibiting radical-induced oxidation of the amino compound, and an aqueous carrier therefore. The radical trapping agent is a hydroxyl-substituted polyunsaturated cyclic compound, a nitrogenous compound, or a combination thereof. Optionally, the composition comprises a metal oxide abrasive (e.g., silica, alumina, titania, ceria, zirconia, or a combination of two or more of the foregoing abrasives). The invention further provides a method of chemically-mechanically polishing a substrate with the CMP compositions, as well as a method of enhancing the shelf-life of CMP compositions containing an amine and a radical-forming oxidizing agent, in which a radical trapping agent is added to the CMP composition.
摘要翻译： 本发明提供一种包含氨基化合物，自由基形成氧化剂，能够抑制氨基化合物自由基诱导氧化的自由基捕获剂的化学机械抛光（CMP）组合物，以及含水载体。 自由基捕获剂是羟基取代的多不饱和环状化合物，含氮化合物或其组合。 任选地，组合物包含金属氧化物研磨剂（例如二氧化硅，氧化铝，二氧化钛，二氧化铈，氧化锆，或两种或更多种前述研磨剂的组合）。 本发明还提供了用CMP组合物对基材进行化学机械抛光的方法，以及提高含有胺和自由基形成氧化剂的CMP组合物的保存期限的方法，其中自由基捕获剂是 添加到CMP组合物中。
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公开(公告)号：US08851059B2
公开(公告)日：2014-10-07
申请号：US13258112
申请日：2010-03-30
IPC分类号： B28D5/04
CPC分类号： B28D5/0076 , Y10T83/242
摘要： The present invention provides a self-cleaning wiresaw cutting apparatus including a cleaning mechanism adapted to clean the components of the wiresaw before, during, or after a cutting process or to humidify the cutting region of the apparatus. The apparatus contains at least one dispenser adapted to dispense an aqueous fluid onto various components of the wiresaw.
摘要翻译： 本发明提供了一种自清洁线切割装置，其包括清洁机构，该清洁机构适于在切割过程之前，期间或之后清洁线锯的部件，或者加湿装置的切割区域。 该装置包含至少一个适于将水性流体分配到线锯的各种部件上的分配器。
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公开(公告)号：US08529680B2
公开(公告)日：2013-09-10
申请号：US12854470
申请日：2010-08-11
申请人： Francesco De Rege Thesauro , Steven Grumbine , Phillip Carter , Shoutian Li , Jian Zhang , David Schroeder , Ming-Shih Tsai
发明人： Francesco De Rege Thesauro , Steven Grumbine , Phillip Carter , Shoutian Li , Jian Zhang , David Schroeder , Ming-Shih Tsai
CPC分类号： C09G1/02 , H01L21/3212
摘要： The invention provides a composition for chemical-mechanical polishing. The composition comprises an abrasive, a first metal rate polishing modifier agent, a second metal rate polishing modifier agent, and a liquid carrier. In one embodiment, the first metal rate polishing modifier agent has a standard reduction potential less than 0.34 V relative to a standard hydrogen electrode, and the second metal rate polishing modifier agent has a standard reduction potential greater than 0.34 V relative to a standard hydrogen electrode. In other embodiments, the first and second metal rate polishing modifier agents are different oxidizing agents.
摘要翻译： 本发明提供了用于化学机械抛光的组合物。 组合物包含研磨剂，第一金属速率抛光改性剂，第二金属速率抛光改性剂和液体载体。 在一个实施方案中，第一金属速率抛光改性剂相对于标准氢电极具有小于0.34V的标准还原电位，并且第二金属速率抛光改性剂相对于标准氢电极具有大于0.34V的标准还原电位 。 在其它实施方案中，第一和第二金属速率抛光改性剂是不同的氧化剂。
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