Method for the fractionation of reactive terminated polymerizable
oligomers
    3.
    发明授权
    Method for the fractionation of reactive terminated polymerizable oligomers 失效
    分离反应性封端的可聚合低聚物的方法

    公开(公告)号:US4622383A

    公开(公告)日:1986-11-11

    申请号:US759630

    申请日:1985-07-26

    摘要: Acetylene or vinyl-terminated polymerizable oligomers of polyamic acid are fractionated to obtain an oligomer product having a molecular weight in the range of 2,000 to 4,000 which exhibits improved wetting and film forming properties. Fractionization is accomplished by dissolving the unfractionated polymerizable oligomer in a solvent in which the desired molecular weight fraction is soluble. The oligomer solution is passed through a filter which removes undissolved material having a molecular weight in excess of the desired molecular weight range. The filtrate is admixed with a hydrocarbon to precipitate the desired molecular weight fraction. Thereafter the collected solids can be redissolved in a ketonic solvent and the fractionation procedure repeated to further improve the molecular weight content of the fractionated oligomer.

    摘要翻译: 将聚酰胺酸的乙炔基或乙烯基封端的可聚合低聚物分馏,得到分子量在2,000至4000范围内的低聚物产物,其表现出改善的润湿和成膜性能。 通过将未分级的可聚合低聚物溶解在其中所需分子量分数可溶的溶剂中来完成分馏。 低聚物溶液通过过滤器,其去除分子量超过所需分子量范围的未溶解材料。 将滤液与烃混合以沉淀所需的分子量级分。 此后,收集的固体可以重新溶解在酮溶剂中,重复分馏步骤以进一步提高分级的低聚物的分子量。

    Method for forming a film of dielectric material on an electric component
    5.
    发明授权
    Method for forming a film of dielectric material on an electric component 失效
    在电气部件上形成电介质材料的膜的方法

    公开(公告)号:US4654223A

    公开(公告)日:1987-03-31

    申请号:US839456

    申请日:1986-03-11

    IPC分类号: H01L21/312 B05D5/12

    CPC分类号: H01L21/312

    摘要: Thin dielectric films are formed on an electronic component by in situ curing a polymerizable oligomer which is end capped with vinyl and/or acetylenic end groups. The polymerizable oligomers are comprised of polyamic acids, polyamic esters, polyisoimides, and mixtures thereof which can be crosslinked to form a three-dimensional network via sites at the vinyl or acetylenic end groups and sites at carbonyl groups contained within the polymeric chain. Use of these polymerizable oligomers permits utilization of low temperature methods of curing which reduce intrinsic and extrinsic stress within the cured dielectric film.

    摘要翻译: 通过原位固化端接有乙烯基和/或炔属端基的可聚合低聚物,在电子部件上形成薄介电膜。 可聚合低聚物由聚酰胺酸,聚酰胺酯,聚异酰亚胺及其混合物组成,它们可通过位于聚合物链内所含的乙烯基或炔属端基和位于羰基的位点而交联形成三维网络。 使用这些可聚合的低聚物允许利用低温固化方法,其降低固化的介电膜内的本征和外在应力。

    Use of radiation sensitive polymerizable oligomers to produce polyimide
negative resists and planarized dielectric components for semiconductor
structures
    6.
    发明授权
    Use of radiation sensitive polymerizable oligomers to produce polyimide negative resists and planarized dielectric components for semiconductor structures 失效
    使用辐射敏感的可聚合低聚物生产用于半导体结构的聚酰亚胺负性抗蚀剂和平面化介电组分

    公开(公告)号:US4568601A

    公开(公告)日:1986-02-04

    申请号:US663017

    申请日:1984-10-19

    摘要: The photosensitivity of a particular group of polymerizable oligomers permits radiation induced polymerization. This photosensitivity thus enables the polymerizable oligomers to be used as photoresists in general, and facilitates in situ cure when the oligomers are used to produce isolation films and trenches in semiconductor devices. The photosensitivity further enables use of a simplified planarization process when the polymerizable oligomers are used in the fabrication of semiconductor structures and integrated circuit components. Specifically, the polymerizable oligomers are comprised of poly N-substituted amic acids, the corresponding amic esters, the corresponding amic isoimides, the corresponding amic imids or mixtures thereof, wherein the end groups of the polymerizable oligomer are end capped with a vinyl or acetylinic end group.

    摘要翻译: 可聚合低聚物的特定组的光敏性允许辐射诱导聚合。 因此,这种光敏性使得可聚合的低聚物通常用作光致抗蚀剂,并且当低聚物用于在半导体器件中制备隔离膜和沟槽时有利于原位固化。 当可聚合低聚物用于制造半导体结构和集成电路部件时,光敏性进一步使得能够使用简化的平坦化工艺。 具体地,可聚合的低聚物由聚N-取代的酰胺酸,相应的酰胺酯,相应的酰胺型异酰亚胺,相应的酰胺型或其混合物组成,其中可聚合低聚物的端基用乙烯基或乙炔基末端封端 组。