公开(公告)号：US08913856B2

公开(公告)日：2014-12-16

申请号：US10880289

申请日：2004-06-29

申请人： Lawrence Jacobowitz ,  John U. Knickerbocker ,  Ronald P. Luijten ,  Subhash L. Shinde

发明人： Lawrence Jacobowitz ,  John U. Knickerbocker ,  Ronald P. Luijten ,  Subhash L. Shinde

IPC分类号： G02B6/12 ,  G02B6/32 ,  G02B6/43 ,  G02B6/42

CPC分类号： G02B6/43 ,  G02B6/4228 ,  G02B6/4249

摘要： A set of interlocking modules supports and connects a die containing lasers, a set of precision molded lenses and a set of beam switching elements. Another embodiment of the invention is a structure for mounting a logic chip and an optical chip on a chip carrier, with the optical chip being mounted on the side of the carrier facing the system board on which the carrier is mounted, so that radiation travels in a straight path from optical sources on the optical chip into optical transmission guides on the board.

摘要翻译： 一组互锁模块支持并连接包含激光的模具，一组精密模制透镜和一组光束开关元件。 本发明的另一个实施例是用于将芯片和光学芯片安装在芯片载体上的结构，其中光学芯片被安装在载体侧面的载体侧面上，使得辐射在 从光学芯片上的光源到板上的光传输引导件的直线路径。

公开(公告)号：US08907439B1

公开(公告)日：2014-12-09

申请号：US13163909

申请日：2011-06-20

申请人： Randolph R. Kay ,  David V. Campbell ,  Subhash L. Shinde ,  Jeffrey L. Rienstra ,  Darwin K. Serkland ,  Michael L. Holmes ,  Seethambal S. Mani ,  Joy M. Barker ,  Dahwey Chu ,  Thomas Gurrieri

发明人： Randolph R. Kay ,  David V. Campbell ,  Subhash L. Shinde ,  Jeffrey L. Rienstra ,  Darwin K. Serkland ,  Michael L. Holmes ,  Seethambal S. Mani ,  Joy M. Barker ,  Dahwey Chu ,  Thomas Gurrieri

IPC分类号： H01L31/12

CPC分类号： H01L27/14634

摘要： A modular, scalable focal plane array is provided as an array of integrated circuit dice, wherein each die includes a given amount of modular pixel array circuitry. The array of dice effectively multiplies the amount of modular pixel array circuitry to produce a larger pixel array without increasing die size. Desired pixel pitch across the enlarged pixel array is preserved by forming die stacks with each pixel array circuitry die stacked on a separate die that contains the corresponding signal processing circuitry. Techniques for die stack interconnections and die stack placement are implemented to ensure that the desired pixel pitch is preserved across the enlarged pixel array.

摘要翻译： 提供了一种模块化的，可缩放的焦平面阵列作为集成电路芯片的阵列，其中每个管芯包括给定量的模块化像素阵列电路。 骰子阵列有效地将模块化像素阵列电路的数量乘以产生更大的像素阵列而不增加管芯尺寸。 通过将每个像素阵列电路管芯堆叠在包含对应的信号处理电路的单独的管芯上形成管芯堆叠来保留扩大的像素阵列上期望的像素间距。 实现用于管芯堆叠互连和管芯堆叠放置的技术以确保跨越扩大的像素阵列保留期望的像素间距。

公开(公告)号：US07473997B2

公开(公告)日：2009-01-06

申请号：US11162468

申请日：2005-09-12

申请人： Kamalesh K. Srivastava ,  Subhash L. Shinde ,  Tien-Jen Cheng ,  Sarah H. Knickerbocker ,  Roger A. Quon ,  William E. Sablinski ,  Julie C. Biggs ,  David E. Eichstadt ,  Jonathan H. Griffith

发明人： Kamalesh K. Srivastava ,  Subhash L. Shinde ,  Tien-Jen Cheng ,  Sarah H. Knickerbocker ,  Roger A. Quon ,  William E. Sablinski ,  Julie C. Biggs ,  David E. Eichstadt ,  Jonathan H. Griffith

IPC分类号： H01L23/48 ,  H01L21/44 ,  H01L29/40

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05556 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1147 ,  H01L2224/13006 ,  H01L2224/13007 ,  H01L2224/13027 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/351 ,  Y02P80/30 ,  H01L2924/00 ,  H01L2224/13 ,  H01L2924/00014

摘要： A method for forming an interconnect structure for a semiconductor device includes defining a via in a passivation layer so as expose a top metal layer in the semiconductor device. A seed layer is formed over the passivation layer, sidewalls of the via, and the top metal layer. A barrier layer is formed over an exposed portion of the seed layer, the exposed portion defined by a first patterned opening. The semiconductor device is annealed so as to cause atoms from the barrier layer to diffuse into the seed layer thereunderneath, wherein the annealing causes diffused regions of the seed layer to have an altered electrical resistivity and electrode potential with respect to undiffused regions of the seed layer.

摘要翻译： 用于形成半导体器件的互连结构的方法包括在钝化层中限定通孔，以暴露半导体器件中的顶部金属层。 在钝化层，通孔的侧壁和顶部金属层上形成种子层。 在种子层的暴露部分上形成阻挡层，暴露部分由第一图案化开口限定。 半导体器件被退火以使来自阻挡层的原子扩散到其中的晶种层中，其中退火使种子层的扩散区域相对于种子层的未扩散区域具有改变的电阻率和电极电位 。

公开(公告)号：US06995084B2

公开(公告)日：2006-02-07

申请号：US10708649

申请日：2004-03-17

申请人： Kamalesh K. Srivastava ,  Subhash L. Shinde ,  Tien-Jen Cheng ,  Sarah H. Knickerbocker ,  Roger A. Quon ,  William E. Sablinski ,  Julie C. Biggs ,  David E. Eichstadt ,  Jonathan H. Griffith

发明人： Kamalesh K. Srivastava ,  Subhash L. Shinde ,  Tien-Jen Cheng ,  Sarah H. Knickerbocker ,  Roger A. Quon ,  William E. Sablinski ,  Julie C. Biggs ,  David E. Eichstadt ,  Jonathan H. Griffith

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05556 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1147 ,  H01L2224/13006 ,  H01L2224/13007 ,  H01L2224/13027 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/19043 ,  H01L2924/351 ,  Y02P80/30 ,  H01L2924/00 ,  H01L2224/13 ,  H01L2924/00014

摘要： A method for forming an interconnect structure for a semiconductor device includes defining a via in a passivation layer so as expose a top metal layer in the semiconductor device. A seed layer is formed over the passivation layer, sidewalls of the via, and the top metal layer. A barrier layer is formed over an exposed portion of the seed layer, the exposed portion defined by a first patterned opening. The semiconductor device is annealed so as to cause atoms from the barrier layer to diffuse into the seed layer thereunderneath, wherein the annealing causes diffused regions of the seed layer to have an altered electrical resistivity and electrode potential with respect to undiffused regions of the seed layer.

公开(公告)号：US5552232A

公开(公告)日：1996-09-03

申请号：US361351

申请日：1994-12-21

申请人： Jon A. Casey ,  Carla N. Cordero ,  Benjamin V. Fasano ,  David B. Goland ,  Robert Hannon ,  Jonathan H. Harris ,  Lester W. Herron ,  Gregory M. Johnson ,  Niranjan M. Patel ,  Andrew M. Reitter ,  Subhash L. Shinde ,  Rao V. Vallabhaneni ,  Robert A. Youngman

发明人： Jon A. Casey ,  Carla N. Cordero ,  Benjamin V. Fasano ,  David B. Goland ,  Robert Hannon ,  Jonathan H. Harris ,  Lester W. Herron ,  Gregory M. Johnson ,  Niranjan M. Patel ,  Andrew M. Reitter ,  Subhash L. Shinde ,  Rao V. Vallabhaneni ,  Robert A. Youngman

IPC分类号： B32B18/00 ,  B22F7/02 ,  C04B35/581 ,  C04B37/02 ,  C04B41/51 ,  C04B41/52 ,  C04B41/88 ,  C04B41/89 ,  C22C29/16 ,  H01L21/48 ,  H01L23/373 ,  H05K1/03 ,  H05K3/24 ,  H05K3/40 ,  H05K3/46 ,  B22F3/00

CPC分类号： C04B41/009 ,  B22F7/02 ,  C04B41/5133 ,  C04B41/52 ,  C04B41/88 ,  C04B41/89 ,  C22C29/16 ,  H01L21/4846 ,  H01L21/486 ,  H01L23/3731 ,  H05K3/4061 ,  B22F2998/00 ,  C04B2111/00405 ,  C04B2111/00844 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K2201/035 ,  H05K2201/09981 ,  H05K3/248 ,  H05K3/4611 ,  H05K3/4629 ,  Y10S428/901 ,  Y10T428/12021 ,  Y10T428/12028 ,  Y10T428/12056 ,  Y10T428/31678

摘要： Disclosed is an aluminum nitride body having graded metallurgy and a method for making such a body. The aluminum nitride body has at least one via and includes a first layer in direct contact with the aluminum nitride body and a second layer in direct contact with, and that completely encapsulates, the first layer. The first layer includes 30 to 60 volume percent aluminum nitride and 40 to 70 volume percent tungsten and/or molybdenum while the second layer includes 90 to 100 volume percent of tungsten and/or molybdenum and 0 to 10 volume percent of aluminum nitride.

公开(公告)号：US5520878A

公开(公告)日：1996-05-28

申请号：US438315

申请日：1995-05-10

申请人： Peter R. Duncombe ,  Subhash L. Shinde ,  Takeshi Takamori

发明人： Peter R. Duncombe ,  Subhash L. Shinde ,  Takeshi Takamori

IPC分类号： C04B35/581 ,  C04B35/622 ,  H01L21/48 ,  H01L23/13 ,  H01L23/15 ,  B22F7/00

CPC分类号： H01L21/4807 ,  C04B35/581 ,  C04B35/622 ,  H01L23/15 ,  H01L2924/0002 ,  Y10T428/24917 ,  Y10T428/24926

摘要： An unsintered aluminum nitride body including:(a) 1 to 5 weight percent of a vitreous solid of boria, alumina, and calcia in the proportions of (1) boria between 3 and 25 weight percent, (2) alumina between 10 and 50 weight percent, and (3) calcia between 40 and 80 weight percent; and(b) aluminum nitride powder as the balance of the aluminum nitride body.The invention further relates to a method of forming the unsintered aluminum nitride body and then sintering it at a temperature between 1550 and 1650 degrees Centrigrade so as to form a dense, thermally conductive aluminum nitride body.

摘要翻译： 一种未烧结的氮化铝体，包括：（a）1至5重量％的氧化硼，氧化铝和氧化钙的玻璃状固体，其比例为（1）硼3重量％和25重量％，（2）10-50重量％的氧化铝 百分比，（3）钙化在40％和80％之间; 和（b）作为氮化铝体的平衡的氮化铝粉末。 本发明还涉及形成未烧结氮化铝体的方法，然后在1550和1650摄氏度之间的温度下烧结，以形成致密的导热氮化铝体。

公开(公告)号：US5482903A

公开(公告)日：1996-01-09

申请号：US173293

申请日：1993-12-22

申请人： Peter R. Duncombe ,  Subhash L. Shinde ,  Takeshi Takamori

发明人： Peter R. Duncombe ,  Subhash L. Shinde ,  Takeshi Takamori

IPC分类号： C04B35/581 ,  C04B35/622 ,  H01L21/48 ,  H01L23/13 ,  H01L23/15 ,  C04B35/582

CPC分类号： H01L21/4807 ,  C04B35/581 ,  C04B35/622 ,  H01L23/15 ,  H01L2924/0002 ,  Y10T428/24917 ,  Y10T428/24926

摘要： An unsintered aluminum nitride body including:(a) 1 to 5 weight percent of a vitreous solid of boria, alumina, and calcia in the proportions of (1) boria between 3 and 25 weight percent, (2) alumina between 10 and 50 weight percent, and (3) calcia between 40 and 80 weight percent; and(b) aluminum nitride powder as the balance of the aluminum nitride body.

摘要翻译： 一种未烧结的氮化铝体，包括：（a）1至5重量％的氧化硼，氧化铝和氧化钙的玻璃状固体，其比例为（1）硼3重量％和25重量％，（2）10-50重量％的氧化铝 百分比，（3）钙化在40％和80％之间; 和（b）作为氮化铝体的平衡的氮化铝粉末。

公开(公告)号：US5424261A

公开(公告)日：1995-06-13

申请号：US172032

申请日：1993-12-22

申请人： Jonathan H. Harris ,  Subhash L. Shinde ,  Takeshi Takamori ,  Robert A. Youngman

发明人： Jonathan H. Harris ,  Subhash L. Shinde ,  Takeshi Takamori ,  Robert A. Youngman

IPC分类号： C04B35/581

CPC分类号： C04B35/581 ,  Y10S428/901

摘要： An aluminum nitride ceramic having desired properties suitable for electronic packaging applications can be prepared from a novel aluminum nitride powder/sintering aid mixture. The sintering aid comprises a glassy component formed from alumina, calcia and boria, and a non-vitreous component comprising an element or compound of a metal of Group IIa, IIIa, or the lanthanides, preferably crystalline oxides, reactible with the crystallized glass component and the alumina from the AlN grains. Alternatively, the sintering aid comprises a multi-component glass composition capable of forming the above components upon melting and thereafter crystallizing upon reaction.

摘要翻译： 可以由新型氮化铝粉末/烧结助剂混合物制备具有适合于电子封装应用的所需性能的氮化铝陶瓷。 烧结助剂包括由氧化铝，氧化钙和氧化硼形成的玻璃状组分，以及非玻璃状组分，其包含IIa，IIIa族金属或镧系元素的元素或化合物，优选结晶氧化物，可与结晶的玻璃组分反应， 来自AlN颗粒的氧化铝。 或者，烧结助剂包括能够在熔化后形成上述组分并随后在反应后结晶的多组分玻璃组合物。

公开(公告)号：US5304517A

公开(公告)日：1994-04-19

申请号：US11577

申请日：1993-02-01

申请人： Jon A. Casey ,  Sylvia M. DeCarr ,  Srinivasa S. N. Reddy ,  Subhash L. Shinde ,  Vivek M. Sura ,  Rao R. Tummala

发明人： Jon A. Casey ,  Sylvia M. DeCarr ,  Srinivasa S. N. Reddy ,  Subhash L. Shinde ,  Vivek M. Sura ,  Rao R. Tummala

IPC分类号： C03C14/00 ,  C04B35/195 ,  H01L23/08 ,  C03C8/18

CPC分类号： C03C14/004 ,  C03C2214/08 ,  C03C2214/20

摘要： A sintering process is described using a glass-ceramic slurry containing an alloy powder or flakes selected from a group of alloys consisting of:______________________________________ Fe--Cr Cu--Ti Fe--Cr--Ni Ag--Ti Cr--Al Nb--Al Ni--Cr Cu--Al Ni--Al Cu--Al--Cr Fe--Al ______________________________________ The slurry is molded and later is sintered in a steam atmosphere at a temperature of about 1000.degree. C. to yield a glass-ceramic substrate toughened against crack propagation and useful in the packaging of semi-conductor device chips.

摘要翻译： 使用包含合金粉末或选自由以下组成的合金的薄片的玻璃 - 陶瓷浆料来描述烧结工艺：-Fe-CrCu-Ti-Fe-Cr-NiAg-Ti-Cr-AlNb-Al-Ni-CrCu -Al-Ni-AlCu-Al-Cr-Fe-Al-该浆料被模制，随后在约1000℃的温度下在蒸汽气氛中烧结，以产生增韧的抗裂纹扩展的玻璃陶瓷基体，并且可用于 半导体器件芯片的封装。

公开(公告)号：US08089133B2

公开(公告)日：2012-01-03

申请号：US10993305

申请日：2004-11-19

申请人： Dinesh Gupta ,  Brenda L. Peterson ,  Mark V. Pierson ,  Eugen Schenfeld ,  Subhash L. Shinde

发明人： Dinesh Gupta ,  Brenda L. Peterson ,  Mark V. Pierson ,  Eugen Schenfeld ,  Subhash L. Shinde

IPC分类号： H01L31/0232

CPC分类号： G02B6/3522 ,  G02B6/2817 ,  G02B6/3544 ,  G02B6/3574 ,  G02B6/3598 ,  G02B6/4214 ,  G02B6/4244 ,  G02B6/4245 ,  G02B6/4246 ,  G02B6/4249 ,  G02B6/4259 ,  G02B6/4269 ,  G02B6/4281 ,  G02B6/43 ,  H01L2924/0002 ,  H01L2924/00

摘要： Optical cubes and optical cube assemblies for directing optical beams are provided. The optical cubes are optically transparent modules that can be adapted to reflect, transmit, and/or partially reflect and transmit optical beams. The optical cubes may include bi-direction or multi-direction beam directing elements for directing optical beams. The optical cube assemblies may include flexible chip assemblies attached to optical cubes. The chip assemblies may include vertical cavity surface-emitting lasers for emitting optical beams or receivers for receiving optical beams mounted on a flexible and electrical interconnect mounting assembly.

摘要翻译： 提供用于引导光束的光学立方体和光学立方体组件。 光学立方体是可以适于反射，透射和/或部分地反射和透射光束的光学透明模块。 光学立方体可以包括用于引导光束的双向或多方向光束引导元件。 光学立方体组件可以包括附接到光学立方体的柔性芯片组件。 芯片组件可以包括用于发射光束的垂直腔表面发射激光器或用于接收安装在柔性和电互连安装组件上的光束的接收器。