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1.ETCHANTS AND METHODS OF FABRICATING METAL WIRING AND THIN FILM TRANSISTOR SUBSTRATE USING THE SAME 审中-公开
标题翻译: 使用其制造金属接线和薄膜晶体管衬底的蚀刻和方法公开(公告)号:US20120322187A1
公开(公告)日:2012-12-20
申请号:US13366696
申请日:2012-02-06
申请人: Jong-Hyun CHOUNG , Seon-il KIM , Ji-Young PARK , Jeanho SONG , Sanggab KIM , Shin Il CHOI , Youngchul PARK , Youngjun JIN , Suckjun LEE , O byoung KWON , Inho YU , Sanghoon JANG , Minki LIM
发明人: Jong-Hyun CHOUNG , Seon-il KIM , Ji-Young PARK , Jeanho SONG , Sanggab KIM , Shin Il CHOI , Youngchul PARK , Youngjun JIN , Suckjun LEE , O byoung KWON , Inho YU , Sanghoon JANG , Minki LIM
CPC分类号: H01L21/32134 , C09K13/08 , C23F1/18 , C23F1/26 , H01L27/124 , H01L27/1259 , H01L29/4908
摘要: An etchant includes: a persulfate; a fluoride; an inorganic acid; a cyclic amine; a sulfonic acid; and one of an organic acid and a salt thereof.
摘要翻译: 蚀刻剂包括:过硫酸盐; 氟化物 无机酸; 环胺; 磺酸; 和有机酸及其盐之一。