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    Nitride semiconductor device
    3.
    发明授权
    Nitride semiconductor device 有权
    氮化物半导体器件

    公开(公告)号：US07868316B2

    公开(公告)日：2011-01-11

    申请号：US12350188

    申请日：2009-01-07

    申请人： Suk Ho Yoon ,  Ki Ho Park ,  Joong Kon Son

    发明人： Suk Ho Yoon ,  Ki Ho Park ,  Joong Kon Son

    IPC分类号： H01L33/06

    CPC分类号： H01L33/06

    摘要： There is provided a nitride semiconductor device. A nitride semiconductor device according to an aspect of the invention may include: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; an active layer provided between the n-type and p-type nitride semiconductor layers and having quantum well layers and quantum barrier layers alternately stacked on each other; and an electron blocking layer provided between the active layer and the p-type nitride semiconductor layer, and having a plurality of first nitride layers formed of a material having a higher band gap energy than the quantum barrier layers and a plurality of second nitride layers formed of a material having a lower band gap energy than the first nitride layers, the first and second nitride layers alternately stacked on each other to form a stacked structure, wherein the plurality of first nitride layers have energy levels bent at predetermined inclinations, and with greater proximity to the p-type nitride semiconductor layer, the first nitride layers have a smaller inclination of the energy level.

    摘要翻译： 提供一种氮化物半导体器件。 根据本发明的一个方面的氮化物半导体器件可以包括：n型氮化物半导体层; p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间并且具有彼此交替堆叠的量子阱层和量子势垒层的有源层; 以及设置在有源层和p型氮化物半导体层之间的电子阻挡层，并且具有由具有比量子势垒层更高的带隙能量的材料形成的多个第一氮化物层和形成的多个第二氮化物层 具有比第一氮化物层低的带隙能量的材料，第一和第二氮化物层彼此交替堆叠以形成堆叠结构，其中多个第一氮化物层具有以预定倾斜度弯曲的能级，并且具有更大的 靠近p型氮化物半导体层，第一氮化物层具有较小的能级倾斜度。

    Electrode structure, and semiconductor light-emitting device having the same
    6.
    发明申请
    Electrode structure, and semiconductor light-emitting device having the same 审中-公开
    电极结构和具有该电极结构的半导体发光器件

    公开(公告)号：US20050087755A1

    公开(公告)日：2005-04-28

    申请号：US10852151

    申请日：2004-05-25

    申请人： Hyun-Soo Kim ,  Jae-Hee Cho ,  Suk-Ho Yoon

    发明人： Hyun-Soo Kim ,  Jae-Hee Cho ,  Suk-Ho Yoon

    IPC分类号： H01L33/32 ,  H01L33/34 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46 ,  H01L33/62 ,  H01L33/00

    CPC分类号： H01L33/32 ,  H01L33/387 ,  H01L33/405 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/16 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12041 ,  H01L2924/00014

    摘要： A semiconductor light emitting device including: a transparent substrate; an electron injection layer which is formed on the transparent substrate; an active layer which is formed on a first region of the electron injection layer; a hole injection layer which is formed on the active layer; a first electrode structure which is formed on the hole injection layer and concurrently provides a high reflectivity and a low contact resistance; a second electrode structure which is formed on a second region of the electron injection layer; and a circuit substrate which is electrically connected with the first and second electrode structures, the first electrode structure includes: a contact metal structure which has any one selected from the group consisting of nickel, palladium, platinum and ITO (Indium Tin Oxide) that have low contact resistance; and a reflective layer which has aluminum or silver.

    摘要翻译： 一种半导体发光器件，包括：透明衬底; 形成在透明基板上的电子注入层; 形成在电子注入层的第一区域上的有源层; 形成在有源层上的空穴注入层; 形成在空穴注入层上的同时提供高反射率和低接触电阻的第一电极结构; 形成在电子注入层的第二区域上的第二电极结构; 以及与第一和第二电极结构电连接的电路基板，第一电极结构包括：具有选自镍，钯，铂和ITO（铟锡氧化物）中的任一种的接触金属结构，其具有 低接触电阻; 以及具有铝或银的反射层。

    METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE
    7.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE 审中-公开
    制造半导体发光装置的方法和制造半导体发光装置包装的方法

    公开(公告)号：US20150207025A1

    公开(公告)日：2015-07-23

    申请号：US14472159

    申请日：2014-08-28

    申请人： Do Young RHEE ,  Sung Tae KIM ,  Young Sun KIM ,  Chul Min KIM ,  Suk Ho YOON ,  Sang Don LEE

    发明人： Do Young RHEE ,  Sung Tae KIM ,  Young Sun KIM ,  Chul Min KIM ,  Suk Ho YOON ,  Sang Don LEE

    IPC分类号： H01L33/00 ,  H01L33/12

    CPC分类号： H01L33/005 ,  H01L33/007

    摘要： A method of manufacturing a semiconductor light emitting device includes forming, on a substrate, a first region of a light emitting structure and the light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A protective layer is formed on the first region in a first chamber. The substrate with the first region and the protective layer formed thereon is transferred to a second chamber. A second region is formed on the first region. The first and second regions are disposed in a direction perpendicular to the substrate. The protective layer is grown above a defective region included in the first region and removed before or while the second region is formed.

    摘要翻译： 一种制造半导体发光器件的方法包括在衬底上形成发光结构的第一区域，并且发光结构包括第一导电型半导体层，有源层和第二导电类型半导体层 。 在第一室中的第一区域上形成保护层。 将形成有第一区域和保护层的基板转移到第二室。 第二区域形成在第一区域上。 第一和第二区域沿垂直于衬底的方向设置。 保护层生长在包括在第一区域中的缺陷区域上方，并且在形成第二区域之前或之后除去。

    Method of manufacturing semiconductor light emitting device
    8.
    发明授权
    Method of manufacturing semiconductor light emitting device 有权
    制造半导体发光器件的方法

    公开(公告)号：US08859314B2

    公开(公告)日：2014-10-14

    申请号：US13523571

    申请日：2012-06-14

    申请人： Jong Sun Maeng ,  Ki Ho Park ,  Bum Joon Kim ,  Hyun Seok Ryu ,  Jung Hyun Lee ,  Boung Kyun Kim ,  Ki Sung Kim ,  Suk Ho Yoon

    发明人： Jong Sun Maeng ,  Ki Ho Park ,  Bum Joon Kim ,  Hyun Seok Ryu ,  Jung Hyun Lee ,  Boung Kyun Kim ,  Ki Sung Kim ,  Suk Ho Yoon

    IPC分类号： H01L33/32 ,  H01L33/00

    CPC分类号： H01L33/007 ,  H01L21/67109 ,  H01L21/68764 ,  H01L21/68771 ,  H01L33/0079

    摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.

    摘要翻译： 提供一种制造半导体发光器件的方法，该方法包括：在半导体生长衬底上依次生长第一导电类型半导体层，有源层和第二导电类型半导体层，以形成发光部分; 在要耦合到所述发光部分的所述第二导电类型半导体层上形成支撑部分; 将半导体生长衬底与发光部分分离; 以及向所述半导体生长衬底施加蚀刻气体以从所述半导体生长衬底的表面去除所述第一导电类型半导体层的残留物。

    METHOD FOR RECYCLING WAFER
    9.
    发明申请
    METHOD FOR RECYCLING WAFER 审中-公开
    回收方法

    公开(公告)号：US20120097184A1

    公开(公告)日：2012-04-26

    申请号：US13275099

    申请日：2011-10-17

    申请人： Ki Ho PARK ,  Kong Tan Sa ,  Suk Ho Yoon ,  Hyun Seok Ryu ,  Bo A Shin

    发明人： Ki Ho PARK ,  Kong Tan Sa ,  Suk Ho Yoon ,  Hyun Seok Ryu ,  Bo A Shin

    IPC分类号： H01L21/02 ,  B08B5/00

    CPC分类号： H01L21/02032

    摘要： A method for recycling a wafer is provided. The method removes residues remaining on the wafer separated from a semiconductor layer, using HCl and Cl2 gases under high temperature and low pressure conditions. According to the method, damage of a surface of the wafer is minimized. In addition, since reduction in thickness and an outer diameter of the wafer is minimized, a number of attempts at reprocessing the wafer may be increased.

    摘要翻译： 提供一种再循环晶片的方法。 该方法使用HCl和Cl2气体在高温和低压条件下除去剩余在半导体层上残留的晶片上的残留物。 根据该方法，使晶片表面的损伤最小化。 此外，由于晶片的厚度和外径的减小被最小化，所以可以增加重新处理晶片的尝试次数。