公开(公告)号：US07842229B2

公开(公告)日：2010-11-30

申请号：US11666349

申请日：2005-10-27

申请人： Sumi Tanaka ,  Kouki Suzuki

发明人： Sumi Tanaka ,  Kouki Suzuki

IPC分类号： C21D9/00 ,  C21B3/00

CPC分类号： H01L21/68792 ,  H01L21/67109

摘要： Disclosed is a substrate rotating device improved such that an amount of particle generation is remarkably reduced, and a substrate processing apparatus provided with the substrate rotating device. The substrate rotating device includes a driven rotary member, e.g., a driven ring, connected directly or indirectly to a substrate support member for supporting a substrate; and a driving rotary member, e.g., a drive rotor, that rotates in abutment against the driven rotary member to drive the driven rotary member for rotation. The driven rotary member and the driving rotary member are formed of ceramic materials, whose values of fracture toughness defined by JIS R1607 are different from each other, and/or whose values of three-point bending strength defined by JIS R1601 are different from each other.

摘要翻译： 公开了一种改善了颗粒产生量显着降低的基板旋转装置以及设置有基板旋转装置的基板处理装置。 基板旋转装置包括直接或间接地连接到用于支撑基板的基板支撑构件的从动旋转构件，例如从动环; 以及驱动旋转构件，例如驱动转子，其旋转抵靠从动旋转构件以驱动从动旋转构件旋转。 被驱动的旋转构件和驱动旋转构件由JIS R1607定义的断裂韧度值彼此不同的陶瓷材料形成，和/或由JIS R1601定义的三点弯曲强度的值彼此不同 。

公开(公告)号：US20100038833A1

公开(公告)日：2010-02-18

申请号：US12440034

申请日：2007-08-31

申请人： Shigeru Kasai ,  Hiroyuki Miyashita ,  Masatake Yoneda ,  Tomohiro Suzuki ,  Sumi Tanaka ,  Masamichi Nomura ,  Miwa Shimizu

发明人： Shigeru Kasai ,  Hiroyuki Miyashita ,  Masatake Yoneda ,  Tomohiro Suzuki ,  Sumi Tanaka ,  Masamichi Nomura ,  Miwa Shimizu

IPC分类号： H01L21/26 ,  C21D1/74

CPC分类号： H01L21/67115 ,  H01L21/67109 ,  H01L31/1864 ,  Y02E10/50 ,  Y02P70/521

摘要： Provided is an annealing apparatus, which is free from a problem of reduced light energy efficiency resulted by the reduction of light emission amount due to a heat generation and capable of maintaining stable performance. The apparatus includes: a processing chamber 1 for accommodating a wafer W; heating sources 17a and 17b including LEDs 33 and facing the surface of the wafer W to irradiate light on the wafer W; light-transmitting members 18a and 18b arranged in alignment with the heating sources 17a and 17b to transmit the light emitted from the LEDs 33; cooling members 4a and 4b supporting the light-transmitting members 18a and 18b at opposite side to the processing chamber 1 to make direct contact with the heating sources 17a and 17b and made of a material of high thermal conductivity; and a cooling mechanism for cooling the cooling members 4a and 4b with a coolant.

摘要翻译： 提供一种退火装置，其不会由于发热而导致的发光量的降低而导致光能效率降低的问题，并且能够保持稳定的性能。 该装置包括：用于容纳晶片W的处理室1; 加热源17a和17b包括LED33并面向晶片W的表面以将光照射在晶片W上; 与发热源17a和17b对准布置的透光部件18a和18b，以透射从LED33发出的光; 在与处理室1相反的一侧支撑透光部件18a和18b的冷却部件4a和4b与加热源17a和17b直接接触并由导热性高的材料制成; 以及用冷却剂冷却冷却部件4a，4b的冷却机构。

公开(公告)号：US20080011734A1

公开(公告)日：2008-01-17

申请号：US11773241

申请日：2007-07-03

申请人： Sumi TANAKA ,  Takayuki Kamaishi ,  Kouki Suzuki

发明人： Sumi TANAKA ,  Takayuki Kamaishi ,  Kouki Suzuki

IPC分类号： F27B5/14

CPC分类号： H01L21/67017 ,  C23C16/45521 ,  C23C16/4584 ,  H01L21/67115

摘要： A processing gas is prevented from entering into a space below a placement table. A supporting surface 62 for supporting the lower face of a placement table 58 is provided at an inner circumferential portion of the upper end of a support 56. A circumferentially extending purge gas groove 64 is formed outside the supporting surface 62, in an intermediate circumferential portion of the upper end of the support 56. A narrow flow path 68 is provided outside the purge gas groove 64, at a position corresponding to an outer circumferential portion of the upper end of the support 56. A purge gas fed from purge gas-feeding means 66 into the purge gas groove diffuses in the circumferential direction in the purge gas groove 64 and flows out to the outside from the narrow flow path 68. Such a flow of the purge gas prevents a processing gas from entering into the purge gas groove 64 and a space S1 below the placement table.

摘要翻译： 防止处理气体进入放置台下方的空间。 用于支撑放置台58的下表面的支撑表面62设置在支撑件56的上端的内圆周部分。 周向延伸的净化气体槽64形成在支撑表面62的外侧，在支撑件56的上端的中间圆周部分。 在对应于支撑件56的上端的外周部分的位置处，在吹扫气体槽64的外侧设置有窄流路68。 从净化气体供给装置66供给到净化气体槽中的净化气体在净化气体槽64中沿圆周方向扩散，从窄流路68流出到外部。 吹扫气体的这种流动防止了处理气体进入清洗气体槽64和放置台下面的空间S1。

公开(公告)号：US06733593B1

公开(公告)日：2004-05-11

申请号：US09646343

申请日：2000-09-18

申请人： Sumi Tanaka ,  Masatake Yoneda

发明人： Sumi Tanaka ,  Masatake Yoneda

IPC分类号： C23C1600

CPC分类号： C23C16/45521 ,  C23C16/04 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/466 ,  H01L21/28556 ,  H01L21/67109 ,  H01L21/68721 ,  H01L21/68735

摘要： A film deposition apparatus of the present invention includes a container forming a processing chamber for processing a target object, a mounting table which is provided in the processing chamber and on which the target object is mounted, a first heating apparatus provided in the mounting table, for heating the target object mounted on the mounting table, a first gas supply section provided in the container, for supplying processing gas into the processing chamber, the processing gas forming a high-melting-point metal-film layer on the target object mounted on the mounting table, a movable clamp for clamping a periphery of the target object and holding the target object on the mounting table, a second heating apparatus formed separately from the clamp, for heating the clamp indirectly, a gas flow path formed between the clamp and the second heating apparatus when the clamp is moved to a position where the clamp clamps the target object, and a second gas supply section for causing backside gas to flow into the gas flow path.

摘要翻译： 本发明的成膜装置包括形成用于处理目标物体的处理室的容器，设置在处理室中并安装有目标物体的安装台，设置在安装台中的第一加热装置， 用于加热安装在安装台上的目标物体，设置在容器中的第一气体供应部分，用于将处理气体供应到处理室中，处理气体在安装在安装台上的目标物体上形成高熔点金属膜层 安装台，用于夹持目标物体的周边并将目标物体保持在安装台上的可移动夹具，与夹具分开形成的用于间接加热夹具的第二加热装置，形成在夹具和 第二加热装置，当夹具移动到夹具夹持目标物体的位置时，第二气体供给部， 气体流入气体流路。

公开(公告)号：US5951772A

公开(公告)日：1999-09-14

申请号：US803008

申请日：1997-02-21

申请人： Kimihiro Matsuse ,  Hideki Lee ,  Hatsuo Osada ,  Sumi Tanaka

发明人： Kimihiro Matsuse ,  Hideki Lee ,  Hatsuo Osada ,  Sumi Tanaka

IPC分类号： C23C8/06 ,  C23C16/44 ,  C23C16/455 ,  H01L21/00 ,  C23C16/00

CPC分类号： C23C16/4557 ,  C23C16/4405 ,  C23C16/4411 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/45565 ,  C23C16/45572 ,  C23C8/06 ,  H01L21/67017 ,  H01L21/67103 ,  Y10S156/916 ,  Y10S438/905 ,  Y10S438/935

摘要： A vacuum processing apparatus includes: a vacuum processing chamber for processing a target object; a processing gas supply source for supplying a processing gas by which a process is performed to the target object in the vacuum processing chamber; a processing gas supply pipe for supplying the processing gas from the processing gas supply source into the vacuum processing chamber; and a pressure reducing valve for keeping the gas supply pipe at a lower pressure than the atmospheric pressure when the processing gas is to be supplied to the vacuum processing chamber.

摘要翻译： 真空处理装置包括：用于处理目标物体的真空处理室; 处理气体供给源，用于向真空处理室中的目标物体供给进行处理的处理气体; 处理气体供给管，用于将来自处理气体供给源的处理气体供给到真空处理室中; 以及当将处理气体供给到真空处理室时，用于将气体供给管保持在比大气压力更低的压力下的减压阀。

公开(公告)号：US09224623B2

公开(公告)日：2015-12-29

申请号：US13399163

申请日：2012-02-17

申请人： Shigeru Kasai ,  Ryoji Yamazaki ,  Mitsutoshi Ashida ,  Yuji Obata ,  Sumi Tanaka

发明人： Shigeru Kasai ,  Ryoji Yamazaki ,  Mitsutoshi Ashida ,  Yuji Obata ,  Sumi Tanaka

IPC分类号： H05B6/66 ,  H05B6/72 ,  C23F1/00 ,  C23C16/00 ,  H01L21/67 ,  H05B6/80

CPC分类号： H01L21/67017 ,  H01L21/67109 ,  H01L21/67115 ,  H01L21/67248 ,  H05B6/806

摘要： There is provided a microwave irradiation apparatus capable of independently controlling a temperature of a target object while irradiating microwave to the target object. The microwave irradiation apparatus 2 includes a processing chamber 4 configured to be vacuum-evacuated; a supporting table 6 configured to support the target object; a processing gas introduction unit 106 configured to introduce a processing gas into the processing chamber; a microwave introduction unit 72 configured to introduce the microwave into the processing chamber; a heating unit 16 configured to heat the target object; a gas cooling unit 104 configured to cool the target object by a cooling gas; a radiation thermometer 64 configured to measure a temperature of the target object; and a temperature control unit 70 configured to adjust the temperature of the target object by controlling the heating unit and the gas cooling unit based on the temperature measured by the radiation thermometer.

摘要翻译： 提供了一种能够在向目标物体照射微波的同时独立地控制目标物体的温度的微波照射装置。 微波照射装置2包括被真空抽真空的处理室4。 配置为支撑目标物体的支撑台6; 处理气体导入单元106，被配置为将处理气体引入到处理室中; 微波引入单元72，被配置为将微波引入处理室; 配置为加热目标物体的加热单元16; 构造成通过冷却气体对目标物体进行冷却的气体冷却单元104; 被配置为测量目标物体的温度的辐射温度计64; 以及温度控制单元70，其被配置为基于由辐射温度计测量的温度来控制加热单元和气体冷却单元来调节目标物体的温度。

公开(公告)号：US08440939B2

公开(公告)日：2013-05-14

申请号：US12680221

申请日：2008-09-25

申请人： Shigeru Kasai ,  Tomohiro Suzuki ,  Sumi Tanaka ,  Masatake Yoneda ,  Hiroyuki Miyashita

发明人： Shigeru Kasai ,  Tomohiro Suzuki ,  Sumi Tanaka ,  Masatake Yoneda ,  Hiroyuki Miyashita

IPC分类号： H05B3/00

CPC分类号： H01L21/67115 ,  H01L25/0753 ,  H01L33/54 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： Disclosed is an annealing device that includes a processing chamber into which a wafer is received, a heating source having a plurality of light emitting diodes (LEDs) for emitting a light toward the wafer, which faces the surface of the wafer, and a light transmissive member provided corresponding to the heating source, into which the light from the light emitting elements is transmitted. The heating source has the light emitting elements attached on a support toward the wafer. Each of the light emitting elements is individually covered with a lens layer made of a transparent resin.

摘要翻译： 公开了一种退火装置，其包括接收晶片的处理室，具有朝向晶片的朝向晶片表面的光的多个发光二极管（LED）的加热源，以及透光 对应于来自发光元件的光被传输到其中的加热源设置的构件。 加热源具有附着在朝向晶片的支撑件上的发光元件。 每个发光元件分别被透明树脂制成的透镜层覆盖。

公开(公告)号：US20110180002A1

公开(公告)日：2011-07-28

申请号：US13121238

申请日：2009-06-12

申请人： Sumi Tanaka ,  Munehisa Futamura

发明人： Sumi Tanaka ,  Munehisa Futamura

IPC分类号： C23C16/448 ,  C23C16/455

CPC分类号： C23C16/4481 ,  H01J37/3244 ,  H01L21/31641 ,  H01L21/31645

摘要： To prevent a liquid material outlet from being clogged with accretion. Disclosed is a vaporizer, which vaporizes a liquid material, discharged from the outlet of a nozzle, in a heated vaporization chamber to produce a raw gas, and which is provided with a cylindrical heated member, which is disposed between the front end of the nozzle and the vaporization chamber so as to cover the perimeter of the outlet, a carrier gas ejection port, which ejects a carrier gas from the vicinity of the outlet, a mixing chamber, wherein the liquid material discharged from the outlet is mixed with the carrier gas, which ejects the mixture toward the vaporization chamber, a first heating part, which heats the vaporization chamber from its exterior, and a second heating part, which heats the heated member from its exterior.

摘要翻译： 防止液体物料出口堵塞。 公开了一种蒸发器，其将从喷嘴出口排出的液体材料蒸发在加热的蒸发室中以产生原始气体，并且设置有圆柱形加热构件，该圆柱形加热构件设置在喷嘴的前端 和蒸发室，以覆盖出口的周边，从出口附近喷射载气的载气喷出口，混合室，其中从出口排出的液体材料与载气混合 ，其将混合物喷射到蒸发室，从其外部加热蒸发室的第一加热部分和从其外部加热加热部件的第二加热部分。

公开(公告)号：US20100314377A1

公开(公告)日：2010-12-16

申请号：US12680221

申请日：2008-09-25

申请人： Shigeru Kasai ,  Tomohiro Suzuki ,  Sumi Tanaka ,  Masatake Yoneda ,  Hiroyuki Miyashita

发明人： Shigeru Kasai ,  Tomohiro Suzuki ,  Sumi Tanaka ,  Masatake Yoneda ,  Hiroyuki Miyashita

IPC分类号： H05B1/00 ,  H01L21/26 ,  H01L33/00

CPC分类号： H01L21/67115 ,  H01L25/0753 ,  H01L33/54 ,  H01L2224/48091 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00012

摘要： Disclosed is an annealing device that includes a processing chamber into which a wafer is received, a heating source having a plurality of light emitting diodes (LEDs) for emitting a light toward the wafer, which faces the surface of the wafer, and a light transmissive member provided corresponding to the heating source, into which the light from the light emitting elements is transmitted. The heating source has the light emitting elements attached on a support toward the wafer. Each of the light emitting elements is individually covered with a lens layer made of a transparent resin.

摘要翻译： 公开了一种退火装置，其包括接收晶片的处理室，具有朝向晶片的朝向晶片表面的光的多个发光二极管（LED）的加热源，以及透光 对应于来自发光元件的光被传输到其中的加热源设置的构件。 加热源具有附着在朝向晶片的支撑件上的发光元件。 每个发光元件分别被透明树脂制成的透镜层覆盖。

公开(公告)号：US20060160359A1

公开(公告)日：2006-07-20

申请号：US10546803

申请日：2004-02-12

申请人： Shigeru Kasai ,  Susumu Katoh ,  Tomohito Komatsu ,  Tetsuya Saito ,  Sumi Tanaka

发明人： Shigeru Kasai ,  Susumu Katoh ,  Tomohito Komatsu ,  Tetsuya Saito ,  Sumi Tanaka

IPC分类号： H01L21/44 ,  C23C16/00

CPC分类号： C23C16/45521 ,  C23C16/455

摘要： A vacuum processing apparatus is constituted of the following portions: a processing container with the bottom, capable of drawing vacuum; a placement platform installed in the container; a heating portion for heating a substrate on the platform; a processing gas-feeding portion for feeding a processing gas into the container; a partitioning portion surrounding a space between the platform and the bottom of the container and partitioning off the space from a processing space in the container; a purge gas-feeding portion for feeding a purge gas into the space surrounded by the partitioning portion; a purge gas-discharging portion for discharging the purge gas from the space surrounded by the partitioning portion; a control portion for controlling the purge gas-feeding portion and/or the purge gas-discharging portion so as to regulate the pressure in the space surrounded by the partitioning portion; and a temperature-detecting portion penetrating the bottom of the container, inserted in the space surrounded by the partitioning portion, and having the top end in contact with the platform. The partitioning portion has the lower end in surface-contact with the bottom of the container. The control portion regulates the pressure in the space surrounded by the partitioning portion to a pressure higher than that in the processing space in the container.

摘要翻译： 真空处理装置由以下部分构成：具有底部的能够抽真空的处理容器; 安装在容器中的放置平台; 用于加热所述平台上的基板的加热部分; 处理气体供给部，用于将处理气体供给到所述容器中; 围绕所述平台和所述容器的底部之间的空间并将所述空间与所述容器中的处理空间分隔开的分隔部分; 净化气体供给部分，用于将净化气体供给到由分隔部分包围的空间中; 净化气体排出部，用于从由分隔部包围的空间排出净化气体; 用于控制净化气体供给部分和/或净化气体排出部分以便调节由分隔部分包围的空间中的压力的​​控制部分; 以及穿过容器底部的温度检测部分，插入由分隔部分包围的空间中，并且顶端与平台接触。 分隔部分的下端与容器的底部表面接触。 控制部将由分隔部包围的空间内的压力调整为高于容器内的处理空间的压力。