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公开(公告)号：US20230135345A1
公开(公告)日：2023-05-04
申请号：US17802517
申请日：2022-03-14
发明人： Shiro KATAKURA , Yuki YOKOI
IPC分类号： C09D11/106 , C09D11/52 , H10K30/30 , H10K85/20 , H10K85/10
摘要： Provided is an ink composition capable of improving external quantum efficiency of a photoelectric conversion element. A method for producing an ink composition containing a p-type semiconductor material, an n-type semiconductor material, and a solvent, the method comprising: a step of preparing one or more compositions in which one or both of the p-type semiconductor material and the n-type semiconductor material are dissolved in the solvent; and a step of storing the composition for 4 days or longer to prepare the ink composition. The p-type semiconductor material contains a polymer compound having a donor-acceptor structure.
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公开(公告)号：US11634420B2
公开(公告)日：2023-04-25
申请号：US16622270
申请日：2018-06-14
发明人： William Tarran , James Lee , Nazrul Islam
IPC分类号： C07D471/16 , H01L51/00 , C07D487/16 , H01L51/50
摘要： A compound of formula (I): (Formula (I)) wherein Ar1, Ar2 and Ar3 independently in each occurrence is a C6-20 aryl group or a 5-20 membered heteroaryl group which is unsubstituted or substituted with one or more substituents; X1, X2 and X3 in each occurrence is independently a direct bond or a group of formula —C(R1)2— wherein R1 in each occurrence is independently H or a substituent. The compound of formula (I) may be used to form an n-dopant for doping an organic semiconductor. A film formed by such n-doping may be used in an organic electronic device, for example an electron injection layer of an organic light-emitting device.
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公开(公告)号：US11631785B2
公开(公告)日：2023-04-18
申请号：US16952699
申请日：2020-11-19
发明人： Hajime Fujikura , Taichiro Konno , Takeshi Kimura
摘要： A group III-nitride laminated substrate includes a sapphire substrate, a first layer that is formed on the sapphire substrate and is made of aluminum nitride, a second layer that is formed on the first layer and serves as an n-type layer made of gallium nitride and doped with an n-type dopant, a third layer that is formed on the second layer and serves as a light-emitting layer made of a group III-nitride, and a fourth layer that is formed on the third layer and serves as a p-type layer made of a group III-nitride and doped with a p-type dopant. The second layer has a thickness of 7 μm or less. A half-value width of (0002) diffraction determined through X-ray rocking curve analysis is 100 seconds or less, and a half-value width of (10-12) diffraction determined through X-ray rocking curve analysis is 200 seconds or less.
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公开(公告)号：US20230115399A1
公开(公告)日：2023-04-13
申请号：US17914232
申请日：2021-01-28
发明人： Yusuke MIKAMI , Kohei SEKI
摘要： A catalyst for halogen production for oxidizing a hydrogen halide with oxygen to produce a halogen, the catalyst for halogen production including 4% or less by volume of water with respect to a pore volume of the catalyst for halogen production while the catalyst is encapsulated in a package, and the package encapsulating therein the catalyst for halogen production for oxidizing a hydrogen halide with oxygen to produce a halogen, wherein the catalyst for halogen production includes 4% or less by volume of water with respect to a pore volume of the catalyst for halogen production.
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公开(公告)号：US20230102860A1
公开(公告)日：2023-03-30
申请号：US17759694
申请日：2021-01-29
IPC分类号： A01N37/44 , A01N43/653 , A01N37/06 , A01P3/00
摘要： The present invention provides a method for controlling a soybean rust fungus having an amino acid substitution of F129L on mitochondrial cytochrome b protein. According to the present invention, a compound represented by formula (I) [wherein: Q represents a group represented by Q1, a group represented by Q2, a group represented by Q3, or a group represented by Q4 (wherein “•” represents a binding site to a benzene ring); R1 represents a C1-C4 alkyl group which may be optionally substituted with one or more halogen atoms, etc.; E represents R2—CH═CH—, etc.; R2 represents a cyclopropyl group, etc.] can be used to control a soybean rust fungus having an amino acid substitution of F129L on mitochondrial cytochrome b protein.
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公开(公告)号：US20230078896A1
公开(公告)日：2023-03-16
申请号：US17792356
申请日：2020-12-23
IPC分类号： H01M4/525 , H01M4/505 , H01M10/0585 , H01M10/0525 , H01M10/0562 , H01M4/62 , H01M10/44 , H01M4/131 , C01G53/00
摘要： What is provided is a positive electrode active material for an all-solid-state lithium-ion battery composed of particles containing crystals of a lithium metal composite oxide, wherein the particles have a hexagonal layered crystal structure belonging to the space group R-3m and contain at least Li and a transition metal, and in powder x-ray diffraction measurement using CuKα rays, the crystallite size L003 of a diffraction peak in a range of 2θ=18.7±1° is 1,300 Å or less, and wherein the BET specific surface area is 0.2 m2/g or more and 2.0 m2/g or less.
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公开(公告)号：US20230074438A1
公开(公告)日：2023-03-09
申请号：US17785832
申请日：2021-03-19
IPC分类号： C09K11/02 , C09K11/88 , C09K11/70 , C08K5/09 , C08F220/18 , C08F220/14 , C08F220/06 , C08F220/32 , C08F2/50 , C08K5/37 , H01L51/50
摘要： Provided is a curable resin composition containing quantum dots (A), a compound (B-1) having a first functional group and a second functional group, a resin (C), a photopolymerizable compound (D), and a photopolymerization initiator (E), wherein the first functional group is a carboxy group and the second functional group is a carboxy group or a thiol group.
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公开(公告)号：US11600785B2
公开(公告)日：2023-03-07
申请号：US16712315
申请日：2019-12-12
发明人： Kiran Kamtekar
IPC分类号： C07D495/22 , H01L51/00 , H01L51/42 , H01L27/30 , H01L51/44
摘要： A compound of formula (I): EAG-EDG-EAG (I) wherein each EAG is an electron accepting group; and EDG is an electron-donating group of formula (IIa): The compound of formula (I) may be used in a photosensitive layer of an organic photodetector wherein the photosensitive layer comprises the compound of formula (I) and an electron donor. A photosensor may comprise the organic photodetector and a light source, e.g. a near infra-red light source.
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公开(公告)号：US11600704B2
公开(公告)日：2023-03-07
申请号：US16621605
申请日：2018-04-19
发明人： Hajime Fujikura
IPC分类号： H01L29/36 , H01L29/20 , C30B25/18 , C30B25/20 , C30B29/40 , C30B31/22 , H01L21/02 , H01L21/265 , H01L21/266 , H01L21/324 , H01L29/66 , H01L29/872
摘要： A nitride semiconductor laminate includes: a substrate comprising a group III nitride semiconductor and including a surface and a reverse surface, the surface being formed from a nitrogen-polar surface, the reverse surface being formed from a group III element-polar surface and being provided on the reverse side from the surface; a protective layer provided at least on the reverse surface side of the substrate and having higher heat resistance than the reverse surface of the substrate; and a semiconductor layer provided on the surface side of the substrate and comprising a group III nitride semiconductor. The concentration of O in the semiconductor layer is lower than 1×1017 at/cm3.
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公开(公告)号：US11597801B2
公开(公告)日：2023-03-07
申请号：US16343911
申请日：2017-10-24
发明人： Kazuyuki Ito
IPC分类号： C08G75/20 , C08K3/013 , C08K3/04 , C08K3/34 , C08K3/40 , C08K7/06 , C08K7/10 , C08K7/14 , C08G65/40
摘要： A method for producing an aromatic polysulfone by a polycondensation reaction between an aromatic dihalogenosulfone compound and an aromatic dihydroxy compound is described. The polycondensation reaction is performed in the presence of at least one aromatic end-capping agent; and an amount, p mol, of the aromatic dihalogenosulfone compound, an amount, q mol, of the aromatic dihydroxy compound, and an amount, r mol, of the aromatic end-capping agent have a relationship satisfying formula (S1) below and formula (S2) below: r/(p−q) q (S2).
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