摘要:
An active optical device and a display apparatus including the same are provided. The active optical device includes: first to third electrodes that are sequentially disposed spaced apart from one another; a first refractive index change layer disposed between the first electrode and the second electrode and in which a refractive index is changed by an electric field; and a second refractive index change layer disposed between the second electrode and the third electrode and in which a refractive index is changed by an electric field.
摘要:
Example embodiments are directed an X-ray detector including an oxide semiconductor transistor. The X-ray detector including the oxide semiconductor transistor includes an oxide semiconductor transistor and a signal storage capacitor in parallel to each other on a substrate. The oxide semiconductor transistor includes a channel formed of an oxide semiconductor material, and a photoconductor. A pixel electrode and a common electrode are formed on opposite surfaces of the photoconductor. The channel includes ZnO, or a compound including ZnO and at least one selected from a group consisting of gallium (Ga), indium (In), hafnium (Hf), and tin (Sn).
摘要:
An active optical device includes a substrate; a plurality of refractive index variable regions formed on the substrate; and a voltage applier which applies an electric field to the plurality of refractive index variable regions.
摘要:
Provided are a substrate structure and method of forming the same. The method of forming the substrate structure may include etching a substrate to form an etched portion having a vertical surface, forming a diffusion material layer on the whole substrate or in part of the substrate; annealing the diffusion material layer to form a seed layer diffused downward toward the surface of the etched portion, and forming a metal layer on the seed layer. Accordingly, surface characteristics of the etched portion of the substrate may be enhanced by the seed layer, and therefore, a metal layer with improved adhesion and a uniform thickness may be formed on the vertical surface of the etched portion.
摘要:
Provided is a complementary metal oxide semiconductor (CMOS) image sensor having a structure capable of increasing areas of photodiodes in unit pixels and expanding light receiving areas of the photodiodes. In the CMOS image sensor, transfer transistors may be formed on the photodiode, and reset transistors, source follower transistors, and selection transistors may be formed on a layer on which the transfer transistors are not formed. In such a CMOS image sensor, the areas of the photodiodes may be increased in unit pixels so that a size of the unit pixels may be reduced and sensitivity of the pixel may be improved.
摘要:
An active optical device and a display apparatus including the same are provided. The active optical device includes: first to third electrodes that are sequentially disposed spaced apart from one another; a first refractive index change layer disposed between the first electrode and the second electrode and in which a refractive index is changed by an electric field; and a second refractive index change layer disposed between the second electrode and the third electrode and in which a refractive index is changed by an electric field.
摘要:
An electron beam focusing electrode and an electron gun using the same may include a plate having a polygonal through-hole; at least a projecting portion formed on at least one side of the through-hole. By using the electron beam focusing electrode, a spreading phenomenon of an electron beam having a rectangular cross section may be reduced. Further, the output of the electron gun may be increased, and electron beams may be easily focused.
摘要:
An active optical device and a display apparatus are provided. The active optical device includes a graphene layer; a plurality of carbon nanotubes (CNTs) disposed on the graphene layer; a transparent electrode layer spaced apart from the plurality of CNTs; and a liquid crystal layer disposed between the graphene layer and the transparent electrode layer. The display apparatus includes a display unit for displaying at least one of two-dimensional (2D) and three-dimensional (3D) images; and the active optical device disposed on the display unit.
摘要:
A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate.
摘要:
An active optical device is provided. The active optical device includes an optically variable layer having a refractive index which changes according to temperature; and a temperature control unit that controls a temperature of one or more regions of the optically variable layer.