Active optical device and display apparatus including the same
    1.
    发明授权
    Active optical device and display apparatus including the same 有权
    有源光学器件及其显示装置

    公开(公告)号:US09104031B2

    公开(公告)日:2015-08-11

    申请号:US13482333

    申请日:2012-05-29

    摘要: An active optical device and a display apparatus including the same are provided. The active optical device includes: first to third electrodes that are sequentially disposed spaced apart from one another; a first refractive index change layer disposed between the first electrode and the second electrode and in which a refractive index is changed by an electric field; and a second refractive index change layer disposed between the second electrode and the third electrode and in which a refractive index is changed by an electric field.

    摘要翻译: 提供了一种有源光学装置和包括该光学装置的显示装置。 有源光学器件包括:第一至第三电极,其彼此间隔开地依次布置; 第一折射率变化层,设置在第一电极和第二电极之间,折射率由电场改变; 以及设置在所述第二电极和所述第三电极之间并且折射率由电场改变的第二折射率变化层。

    X-ray detector including oxide semiconductor transistor
    2.
    发明授权
    X-ray detector including oxide semiconductor transistor 有权
    X射线检测器包括氧化物半导体晶体管

    公开(公告)号:US08963096B2

    公开(公告)日:2015-02-24

    申请号:US12926921

    申请日:2010-12-17

    IPC分类号: H01L27/146 G01T1/24 H01L31/08

    CPC分类号: H01L31/085 G01T1/24

    摘要: Example embodiments are directed an X-ray detector including an oxide semiconductor transistor. The X-ray detector including the oxide semiconductor transistor includes an oxide semiconductor transistor and a signal storage capacitor in parallel to each other on a substrate. The oxide semiconductor transistor includes a channel formed of an oxide semiconductor material, and a photoconductor. A pixel electrode and a common electrode are formed on opposite surfaces of the photoconductor. The channel includes ZnO, or a compound including ZnO and at least one selected from a group consisting of gallium (Ga), indium (In), hafnium (Hf), and tin (Sn).

    摘要翻译: 示例性实施例涉及包括氧化物半导体晶体管的X射线检测器。 包括氧化物半导体晶体管的X射线检测器包括在基板上彼此平行的氧化物半导体晶体管和信号存储电容器。 氧化物半导体晶体管包括由氧化物半导体材料形成的沟道和感光体。 像素电极和公共电极形成在感光体的相对表面上。 该通道包括ZnO或包含ZnO和选自镓(Ga),铟(In),铪(Hf)和锡(Sn)中的至少一种的化合物。

    CMOS image sensor and method of manufacturing the same
    5.
    发明授权
    CMOS image sensor and method of manufacturing the same 有权
    CMOS图像传感器及其制造方法

    公开(公告)号:US08507906B2

    公开(公告)日:2013-08-13

    申请号:US12591909

    申请日:2009-12-04

    IPC分类号: H01L31/032 H01L21/00

    摘要: Provided is a complementary metal oxide semiconductor (CMOS) image sensor having a structure capable of increasing areas of photodiodes in unit pixels and expanding light receiving areas of the photodiodes. In the CMOS image sensor, transfer transistors may be formed on the photodiode, and reset transistors, source follower transistors, and selection transistors may be formed on a layer on which the transfer transistors are not formed. In such a CMOS image sensor, the areas of the photodiodes may be increased in unit pixels so that a size of the unit pixels may be reduced and sensitivity of the pixel may be improved.

    摘要翻译: 提供了具有能够增加单位像素中的光电二极管的面积并扩大光电二极管的光接收面积的结构的互补金属氧化物半导体(CMOS)图像传感器。 在CMOS图像传感器中,可以在光电二极管上形成传输晶体管,并且可以在不形成传输晶体管的层上形成复位晶体管,源极跟随器晶体管和选择晶体管。 在这样的CMOS图像传感器中,可以以单位像素增加光电二极管的面积,从而可以减小单位像素的尺寸,并且可以提高像素的灵敏度。

    ACTIVE OPTICAL DEVICE AND DISPLAY APPARATUS INCLUDING THE SAME
    6.
    发明申请
    ACTIVE OPTICAL DEVICE AND DISPLAY APPARATUS INCLUDING THE SAME 有权
    活动的光学装置和显示装置包括它们

    公开(公告)号:US20130135709A1

    公开(公告)日:2013-05-30

    申请号:US13482333

    申请日:2012-05-29

    IPC分类号: G02F1/29

    摘要: An active optical device and a display apparatus including the same are provided. The active optical device includes: first to third electrodes that are sequentially disposed spaced apart from one another; a first refractive index change layer disposed between the first electrode and the second electrode and in which a refractive index is changed by an electric field; and a second refractive index change layer disposed between the second electrode and the third electrode and in which a refractive index is changed by an electric field.

    摘要翻译: 提供了一种有源光学装置和包括该光学装置的显示装置。 有源光学器件包括:第一至第三电极,其彼此间隔开地依次布置; 第一折射率变化层,设置在第一电极和第二电极之间,折射率由电场改变; 以及设置在所述第二电极和所述第三电极之间并且折射率由电场改变的第二折射率变化层。

    ACTIVE OPTICAL DEVICE AND DISPLAY APPARATUS INCLUDING THE SAME
    8.
    发明申请
    ACTIVE OPTICAL DEVICE AND DISPLAY APPARATUS INCLUDING THE SAME 审中-公开
    活动的光学装置和显示装置包括它们

    公开(公告)号:US20120242927A1

    公开(公告)日:2012-09-27

    申请号:US13290516

    申请日:2011-11-07

    IPC分类号: G02F1/1335 G02F1/1341

    摘要: An active optical device and a display apparatus are provided. The active optical device includes a graphene layer; a plurality of carbon nanotubes (CNTs) disposed on the graphene layer; a transparent electrode layer spaced apart from the plurality of CNTs; and a liquid crystal layer disposed between the graphene layer and the transparent electrode layer. The display apparatus includes a display unit for displaying at least one of two-dimensional (2D) and three-dimensional (3D) images; and the active optical device disposed on the display unit.

    摘要翻译: 提供有源光学装置和显示装置。 有源光学器件包括石墨烯层; 设置在石墨烯层上的多个碳纳米管(CNT); 与所述多个CNT间隔开的透明电极层; 以及设置在石墨烯层和透明电极层之间的液晶层。 显示装置包括用于显示二维(2D)和三维(3D)图像中的至少一个的显示单元; 以及设置在显示单元上的有源光学装置。

    METHOD OF MULTI-STAGE SUBSTRATE ETCHING AND TERAHERTZ OSCILLATOR MANUFACTURED USING THE SAME METHOD
    9.
    发明申请
    METHOD OF MULTI-STAGE SUBSTRATE ETCHING AND TERAHERTZ OSCILLATOR MANUFACTURED USING THE SAME METHOD 有权
    使用相同方法制造的多阶段衬底蚀刻和TERAHERTZ振荡器的方法

    公开(公告)号:US20120133450A1

    公开(公告)日:2012-05-31

    申请号:US13306146

    申请日:2011-11-29

    IPC分类号: H03B5/30 H01L21/762

    CPC分类号: H01P11/003 Y10T428/24802

    摘要: A method of multi-stage substrate etching and a terahertz oscillator manufactured by using the method are provided. The method comprises the steps of forming a first mask pattern on any one surface of a first substrate, forming a hole by etching the first substrate using the first mask pattern as an etching mask, bonding, to the first substrate, a second substrate having the same thickness as a depth to be etched, forming a second mask pattern on the second substrate bonded, forming a hole by etching the second substrate using the second mask pattern as an etching mask, and removing an oxide layer having the etching selectivity between the first substrate and the second substrate.

    摘要翻译: 提供了一种多级衬底蚀刻的方法和使用该方法制造的太赫兹振荡器。 该方法包括以下步骤:在第一衬底的任何一个表面上形成第一掩模图案,通过使用第一掩模图案作为蚀刻掩模将第一衬底蚀刻形成孔,将第一衬底粘合到第一衬底上, 与要蚀刻的深度相同的厚度,在第二衬底上形成第二掩模图案,通过使用第二掩模图案作为蚀刻掩模蚀刻第二衬底形成孔,并且去除在第一衬底之间具有蚀刻选择性的氧化物层 基板和第二基板。

    ACTIVE OPTICAL DEVICE USING PHASE CHANGE MATERIAL
    10.
    发明申请
    ACTIVE OPTICAL DEVICE USING PHASE CHANGE MATERIAL 有权
    使用相变材料的活性光学器件

    公开(公告)号:US20120127562A1

    公开(公告)日:2012-05-24

    申请号:US13091360

    申请日:2011-04-21

    IPC分类号: G02F1/29

    摘要: An active optical device is provided. The active optical device includes an optically variable layer having a refractive index which changes according to temperature; and a temperature control unit that controls a temperature of one or more regions of the optically variable layer.

    摘要翻译: 提供了一种有源光学器件。 有源光学器件包括具有根据温度而变化的折射率的光学可变层; 以及温度控制单元,其控制光学可变层的一个或多个区域的温度。