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    Semiconductor devices including line patterns separated by cutting regions
    1.
    发明授权
    Semiconductor devices including line patterns separated by cutting regions 有权
    半导体器件包括由切割区分开的线图案

    公开(公告)号：US07898007B2

    公开(公告)日：2011-03-01

    申请号：US11961551

    申请日：2007-12-20

    申请人： Sung-Bok Lee ,  Joon-Hee Lee

    发明人： Sung-Bok Lee ,  Joon-Hee Lee

    IPC分类号： H01L23/52

    CPC分类号： H01L27/11568 ,  H01L27/0207 ,  H01L27/115

    摘要： Semiconductor devices are provided. A semiconductor device can include a substrate and a plurality of dummy line patterns on the substrate that extend in a first direction parallel with one another. Each of the dummy line patterns can include a plurality of sub-line patterns aligned along the first direction and which are separated from each other by at least one cutting region therebetween. The dummy line patterns can include first and second dummy line patterns which are adjacent to each other in a second direction that is perpendicular to the first direction. At least one of the cutting regions between a pair of sub-line patterns of the first dummy line pattern is aligned with and bounded by one of the sub-line patterns of the second dummy line pattern in the second direction.

    摘要翻译： 提供半导体器件。 半导体器件可以包括衬底和在基板上的彼此平行的第一方向上延伸的多个虚拟线图案。 虚线图案中的每一个可以包括沿着第一方向排列的多个子线图案，并且通过其间的至少一个切割区域彼此分离。 假线图案可以包括在垂直于第一方向的第二方向上彼此相邻的第一和第二假线图案。 第一虚线图案的一对子线图案之间的切割区域中的至少一个与第二虚线图案的第二方向上的一条子线图形对准并限定在第二方向上。

    Silicon microphone
    4.
    发明授权
    Silicon microphone 失效
    硅麦克风

    公开(公告)号：US07023066B2

    公开(公告)日：2006-04-04

    申请号：US09989513

    申请日：2001-11-20

    申请人： Sung Bok Lee ,  Peter V. Loeppert

    发明人： Sung Bok Lee ,  Peter V. Loeppert

    IPC分类号： H01L29/82

    CPC分类号： B81B3/0072 ,  B81B2201/0257 ,  B81B2203/0127 ,  H04R19/005

    摘要： A solid-state transducer is disclosed. The transducer comprises a semi-conductor substrate forming a support structure and having an opening. A thin-film structure forming a diaphragm responsive to fluid-transmitted acoustic pressure is disposed over the opening. The transducer further includes a plurality of semi-conductor supports and tangential arms extending from the diaphragm edge for connecting the periphery of the diaphragm to the supports. The tangential arms permit the diaphragm to rotate relative to the supports to relieve film stress in the diaphragm. The transducer still further includes a plurality of stop bumps disposed between the substrate and the diaphragm. The stop bumps determine the separation of the diaphragm from the substrate when the transducer is biased.

    摘要翻译： 公开了一种固态换能器。 换能器包括形成支撑结构并具有开口的半导体衬底。 形成响应于流体传播声压的隔膜的薄膜结构设置在开口上方。 换能器还包括多个半导体支撑件和从隔膜边缘延伸的切向臂，用于将隔膜的周边连接到支撑件。 切向臂允许隔膜相对于支撑件旋转以减轻隔膜中的膜应力。 换能器还包括设置在基板和隔膜之间的多个停止凸块。 当传感器偏置时，停止凸起确定隔膜与基板的分离。

    SEMICONDUCTOR DEVICES INCLUDING LINE PATTERNS SEPARATED BY CUTTING REGIONS
    5.
    发明申请
    SEMICONDUCTOR DEVICES INCLUDING LINE PATTERNS SEPARATED BY CUTTING REGIONS 有权
    半导体器件，包括切割区域划分的线形图案

    公开(公告)号：US20090072322A1

    公开(公告)日：2009-03-19

    申请号：US11961551

    申请日：2007-12-20

    申请人： Sung-Bok Lee ,  Joon-Hee Lee

    发明人： Sung-Bok Lee ,  Joon-Hee Lee

    IPC分类号： H01L27/105

    CPC分类号： H01L27/11568 ,  H01L27/0207 ,  H01L27/115

    摘要： Semiconductor devices are provided. A semiconductor device can include a substrate and a plurality of dummy line patterns on the substrate that extend in a first direction parallel with one another. Each of the dummy line patterns can include a plurality of sub-line patterns aligned along the first direction and which are separated from each other by at least one cutting region therebetween. The dummy line patterns can include first and second dummy line patterns which are adjacent to each other in a second direction that is perpendicular to the first direction. At least one of the cutting regions between a pair of sub-line patterns of the first dummy line pattern is aligned with and bounded by one of the sub-line patterns of the second dummy line pattern in the second direction.

    摘要翻译： 提供半导体器件。 半导体器件可以包括衬底和在基板上的彼此平行的第一方向上延伸的多个虚拟线图案。 虚线图案中的每一个可以包括沿着第一方向排列的多个子线图案，并且通过其间的至少一个切割区域彼此分离。 假线图案可以包括在垂直于第一方向的第二方向上彼此相邻的第一和第二假线图案。 第一伪线图案的一对子线图案之间的切割区域中的至少一个与第二虚线图案的第二方向上的一条子线图案对准并限定在第二方向上。

    Method for manufacturing half-metallic magnetic oxide and plasma sputtering apparatus used in the same
    8.
    发明授权
    Method for manufacturing half-metallic magnetic oxide and plasma sputtering apparatus used in the same 失效
    用于制造其中使用的半金属磁性氧化物和等离子体溅射装置的方法

    公开(公告)号：US06802949B2

    公开(公告)日：2004-10-12

    申请号：US10269865

    申请日：2002-10-15

    申请人： Jin Pyo Hong ,  Chang Hyo Lee ,  Chae Ok Kim ,  Kap Soo Yoon ,  Sung Bok Lee

    发明人： Jin Pyo Hong ,  Chang Hyo Lee ,  Chae Ok Kim ,  Kap Soo Yoon ,  Sung Bok Lee

    IPC分类号： C23C1435

    CPC分类号： H01J37/3447 ,  C23C14/0036 ,  C23C14/085 ,  C23C14/3471 ,  H01J37/3402

    摘要： Disclosed are a method for manufacturing a half-metallic magnetic oxide and a plasma sputtering apparatus used in the method. A conductor provided with at least one hole is disposed between a metal target and a substrate holder in the plasma sputtering apparatus, thereby improving the bonding of metal ions discharged from the metal target to oxygen ions, and a magnetic field with a coercive force larger than that of a thin film to be formed on the substrate, thereby obtaining a magnetic oxide film with excellent properties. In a preferred embodiment of the present invention, a conductor-side power supply unit is connected to the conductor, thereby additionally supplying power to the conductor and generating second plasma. The plasma sputtering apparatus supplies high power so as to decompose oxygen, and discharges metal ions with different electrovalences at a precise ratio by the additional power supply, thereby being effectively used in manufacturing a half-metallic oxide at low temperatures.

    摘要翻译： 公开了一种制造半金属磁性氧化物的方法和用于该方法的等离子体溅射装置。 设置有至少一个孔的导体设置在等离子体溅射装置中的金属靶和衬底保持器之间，从而改善从金属靶释放的金属离子与氧离子的结合，以及矫顽力大于 在基板上形成薄膜的薄膜，从而获得具有优异性能的磁性氧化膜。 在本发明的优选实施例中，导体侧电源单元连接到导体，从而另外向导体供电并产生第二等离子体。 等离子体溅射装置提供高功率以分解氧气，并通过附加电源以精确的比例以不同电价排出金属离子，从而有效地用于在低温下制造半金属氧化物。