公开(公告)号：US20210338222A1

公开(公告)日：2021-11-04

申请号：US16861232

申请日：2020-04-29

申请人： Ho Jong LEE ,  Sung Wook HWANG

发明人： Ho Jong LEE ,  Sung Wook HWANG

IPC分类号： A61B17/04

摘要： A soft tissue fixing anchor includes: an anchor member which is inserted to the bone cavity interior and prevented from moving in the bone cavity interior by the artificial joint when the artificial joint is implanted; and a suture of which one end portion is fixed to the anchor member and the other end portion is exposed to a bone cavity exterior of the bone so as to be sutured to the soft tissue.

公开(公告)号：US09627202B2

公开(公告)日：2017-04-18

申请号：US14822438

申请日：2015-08-10

申请人： SoonMok Ha ,  Sung-Wook Hwang ,  Joonsoo Park ,  Dae-Yong Kang ,  Byungjun Jeon

发明人： SoonMok Ha ,  Sung-Wook Hwang ,  Joonsoo Park ,  Dae-Yong Kang ,  Byungjun Jeon

IPC分类号： H01L21/027 ,  H01L21/033

CPC分类号： H01L21/0271 ,  H01L21/0334 ,  H01L21/0337 ,  H01L21/0338

摘要： The inventive concept provides methods for forming fine patterns of a semiconductor device. The method includes forming a buffer mask layer having first holes on a hard mask layer including a first region and a second region around the first region, forming first pillars filling the first holes and disposed on the buffer mask layer in the first region and second pillars disposed on the buffer mask layer in the second region, forming a block copolymer layer covering the first and second pillars on the buffer mask layer, phase-separating the block copolymer layer to form first block patterns spaced apart from the first and second pillars and a second block pattern surrounding the first and second pillars and the first block patterns, removing the first block patterns, and forming second holes in the buffer mask layer under the first block patterns.

公开(公告)号：US07629589B2

公开(公告)日：2009-12-08

申请号：US11703130

申请日：2007-02-07

申请人： Sung-Wook Hwang ,  Do-Haing Lee ,  Chul-Ho Shin ,  Jong-Woo Sun

发明人： Sung-Wook Hwang ,  Do-Haing Lee ,  Chul-Ho Shin ,  Jong-Woo Sun

IPC分类号： G21K1/08 ,  H01J1/36 ,  H01J1/46

CPC分类号： H01J37/08 ,  H01J27/024 ,  H01J2237/061 ,  H01J2237/3151 ,  H01J2237/31701

摘要： An apparatus and/or method for controlling an ion beam may be provided, and/or a method for preparing an extraction electrode for the same may be provided. In the apparatus, a plurality of extraction electrodes may be disposed in a path of an ion beam. At least one extraction electrode may include a plurality of sub-grids.

摘要翻译： 可以提供用于控制离子束的装置和/或方法，和/或可以提供用于制备其的提取电极的方法。 在该装置中，多个提取电极可以设置在离子束的路径中。 至少一个提取电极可以包括多个子网格。

公开(公告)号：US20090181531A1

公开(公告)日：2009-07-16

申请号：US12346934

申请日：2008-12-31

申请人： Soo-doo Chae ,  Chung-woo Kim ,  Choong-man Lee ,  Yung-hee Lee ,  Chan-jin Park ,  Sung-wook Hwang ,  Jeong-hee Han ,  Do-haing Lee ,  Jin-seok Lee

发明人： Soo-doo Chae ,  Chung-woo Kim ,  Choong-man Lee ,  Yung-hee Lee ,  Chan-jin Park ,  Sung-wook Hwang ,  Jeong-hee Han ,  Do-haing Lee ,  Jin-seok Lee

IPC分类号： H01L21/28

CPC分类号： H01L21/31155 ,  H01L27/11568 ,  H01L29/66833 ,  H01L29/792

摘要： Methods of manufacturing non-volatile memory devices that can reduce or prevent loss of charges stored in a charge storage layer and/or that can improve charge storage capacity by neutral beam irradiation of an insulating layer are disclosed. The methods include forming a tunneling insulating layer on a substrate, forming a charge storage layer on the tunneling insulating layer, forming a blocking insulating layer on the charge storage layer, irradiating the blocking insulating layer and/or the tunneling insulating layer with a neutral beam, and forming a gate conductive layer on the blocking insulating layer.

摘要翻译： 公开了制造可以减少或防止存储在电荷存储层中的电荷损失和/或可通过绝缘层的中性束照射改善电荷存储容量的非易失性存储器件的制造方法。 所述方法包括在衬底上形成隧道绝缘层，在隧道绝缘层上形成电荷存储层，在电荷存储层上形成阻挡绝缘层，用中性光束照射阻挡绝缘层和/或隧道绝缘层 并且在所述阻挡绝缘层上形成栅极导电层。

公开(公告)号：US20080164819A1

公开(公告)日：2008-07-10

申请号：US12007187

申请日：2008-01-08

申请人： Sung-Wook Hwang ,  Yung Hee Yvette Lee ,  Chul-Ho Shin ,  Jin-Seok Lee

发明人： Sung-Wook Hwang ,  Yung Hee Yvette Lee ,  Chul-Ho Shin ,  Jin-Seok Lee

IPC分类号： G21K1/00 ,  H05H1/00 ,  G21K1/14

CPC分类号： H01J37/305 ,  H01J27/024 ,  H01J37/08 ,  H01J37/3171 ,  H01J2237/0041 ,  H01J2237/061

摘要： Provided is a semiconductor apparatus using an ion beam. The semiconductor apparatus may include a first grid to which a voltage applied. The voltage applied to the first grid may have the same potential level as that of a reference voltage applied to a wall portion of a plasma chamber in which plasma may be generated. The first grid may adjoin the plasma. Therefore, a potential level difference between the first grid and the wall portion of the plasma chamber may be zero, and thus the plasma may be stable.

摘要翻译： 提供了使用离子束的半导体装置。 半导体装置可以包括施加电压的第一栅极。 施加到第一栅极的电压可以具有与施加到其中可能产生等离子体的等离子体室的壁部分的参考电压相同的电位电平。 第一个栅格可能与等离子体相邻。 因此，等离子体室的第一栅极和壁部之间的电位差可以为零，因此等离子体可以是稳定的。

公开(公告)号：US20060157843A1

公开(公告)日：2006-07-20

申请号：US11332185

申请日：2006-01-17

申请人： Sung-Wook Hwang

发明人： Sung-Wook Hwang

IPC分类号： H01L23/02

CPC分类号： H05K1/141 ,  H01L24/73 ,  H01L25/105 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/1023 ,  H01L2225/107 ,  H01L2924/15311 ,  H01L2924/15331 ,  H05K3/3436 ,  H05K2201/10378 ,  H05K2201/10515 ,  H05K2201/10734 ,  H01L2924/00012 ,  H01L2924/00

摘要： A stacked semiconductor package including a number of solder ball pads formed on a lower surface of an interposing print circuit board, which is smaller than that of solder ball pads formed on an upper surface thereof, a pitch of the solder ball pads formed on the lower surface of the interposing print circuit board is greater than a pitch of the solder ball pads formed on the upper interposing print circuit board.

公开(公告)号：US07858464B2

公开(公告)日：2010-12-28

申请号：US12346934

申请日：2008-12-31

申请人： Soo-doo Chae ,  Chung-woo Kim ,  Choong-man Lee ,  Yung-hee Lee ,  Chan-jin Park ,  Sung-wook Hwang ,  Jeong-hee Han ,  Do-haing Lee ,  Jin-seok Lee

发明人： Soo-doo Chae ,  Chung-woo Kim ,  Choong-man Lee ,  Yung-hee Lee ,  Chan-jin Park ,  Sung-wook Hwang ,  Jeong-hee Han ,  Do-haing Lee ,  Jin-seok Lee

IPC分类号： H01L21/336 ,  H01L21/8234 ,  H01L21/8238

CPC分类号： H01L21/31155 ,  H01L27/11568 ,  H01L29/66833 ,  H01L29/792

摘要： Methods of manufacturing non-volatile memory devices that can reduce or prevent loss of charges stored in a charge storage layer and/or that can improve charge storage capacity by neutral beam irradiation of an insulating layer are disclosed. The methods include forming a tunneling insulating layer on a substrate, forming a charge storage layer on the tunneling insulating layer, forming a blocking insulating layer on the charge storage layer, irradiating the blocking insulating layer and/or the tunneling insulating layer with a neutral beam, and forming a gate conductive layer on the blocking insulating layer.

摘要翻译： 公开了制造可以减少或防止存储在电荷存储层中的电荷损失和/或可通过绝缘层的中性束照射改善电荷存储容量的非易失性存储器件的制造方法。 所述方法包括在衬底上形成隧道绝缘层，在隧道绝缘层上形成电荷存储层，在电荷存储层上形成阻挡绝缘层，用中性光束照射阻挡绝缘层和/或隧道绝缘层 并且在所述阻挡绝缘层上形成栅极导电层。

公开(公告)号：US20100136745A1

公开(公告)日：2010-06-03

申请号：US12698352

申请日：2010-02-02

申请人： Sung-Wook Hwang

发明人： Sung-Wook Hwang

IPC分类号： H01L21/60 ,  H01L21/50

CPC分类号： H05K1/181 ,  H01L23/49811 ,  H01L24/48 ,  H01L24/73 ,  H01L25/105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/3511 ,  H05K3/3421 ,  H05K3/3447 ,  H05K2201/10515 ,  H05K2201/10689 ,  H05K2201/10704 ,  H05K2201/10734 ,  H05K2201/10946 ,  Y02P70/611 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method of fabricating a package-on-package (POP) package is disclosed. The method includes preparing a first semiconductor package including a first substrate having external contact electrodes and a first semiconductor chip mounted on the first substrate, and preparing a second semiconductor package including a second substrate having external contact electrodes and a second semiconductor chip mounted on the second substrate. The method further includes forming lead lines in the second semiconductor package, the lead lines being electrically connected to the external contact electrodes of the second substrate, and stacking the second semiconductor package on the first semiconductor package and electrically connecting the external contact electrodes of the first substrate to the external contact electrodes of the second substrate using the lead lines.

摘要翻译： 公开了一种制造封装封装（POP）封装的方法。 该方法包括制备包括具有外部接触电极的第一基板和安装在第一基板上的第一半导体芯片的第一半导体封装，以及制备包括具有外部接触电极的第二基板和安装在第二基板上的第二半导体芯片的第二半导体封装 基质。 该方法还包括在第二半导体封装中形成引线，引线与第二衬底的外部接触电极电连接，并将第二半导体封装堆叠在第一半导体封装上，并电连接第一半导体封装的外部接触电极 使用引线将衬底施加到第二衬底的外部接触电极。

公开(公告)号：US07723834B2

公开(公告)日：2010-05-25

申请号：US11851284

申请日：2007-09-06

申请人： Sung-Wook Hwang

发明人： Sung-Wook Hwang

IPC分类号： H01L23/495

CPC分类号： H05K1/181 ,  H01L23/49811 ,  H01L24/48 ,  H01L24/73 ,  H01L25/105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/06568 ,  H01L2225/1023 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/3511 ,  H05K3/3421 ,  H05K3/3447 ,  H05K2201/10515 ,  H05K2201/10689 ,  H05K2201/10704 ,  H05K2201/10734 ,  H05K2201/10946 ,  Y02P70/611 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A package-on-package (POP) package in which semiconductor packages are stacked using lead lines rather than conventional solder balls, and a fabricating method thereof are provided. According to the POP package and the fabricating method thereof of the present invention, the POP package is prevented from being short-circuited even when an underlying semiconductor package gets thicker and the POP package can sufficiently withstand deformation caused by post-fabrication warpage.

摘要翻译： 一种封装封装（POP）封装，其中使用引线而不是常规焊球堆叠半导体封装，并提供其制造方法。 根据本发明的POP封装及其制造方法，即使下面的半导体封装变厚并且POP封装能够充分地承受由后制造翘曲引起的变形，也可以防止POP封装短路。

公开(公告)号：US07385183B2

公开(公告)日：2008-06-10

申请号：US11335725

申请日：2006-01-19

申请人： Sung-Chan Park ,  Sung-Wook Hwang

发明人： Sung-Chan Park ,  Sung-Wook Hwang

IPC分类号： H05H3/02 ,  H01J37/26 ,  H01S1/00

CPC分类号： H01J37/026 ,  H01J37/32357 ,  H01J2237/0042 ,  H01J2237/334

摘要： In a substrate processing apparatus using a neutralized beam and a method thereof, the substrate processing apparatus includes: an ion source for emitting an ion beam at an emitting angle; reflectors at which the ion beam emitted by the ion source is incident and subject to 2n collisions (where n is a positive integer) in first and second opposite directions to neutralize the ion beam as a neutralized beam and to restore a direction of propagation of the neutralized beam to the emitting angle of the ion beam; and a substrate at which the neutralized beam generated by the reflectors is incident on to perform a process. Accordingly, an incident angle of the resultant neutralized beam is perpendicular to a substrate, while the direction of propagation of the originating ion source and the surface of the substrate are maintained to be perpendicular to each other.

摘要翻译： 在使用中和束的基板处理装置及其方法中，基板处理装置包括：用于以发射角发射离子束的离子源; 由离子源发射的离子束入射并且在第一和第二相反方向上经受2n次碰撞（其中n是正整数）的反射器，以将离子束中和作为中和的光束，并恢复所述离子束的传播方向 中和的束到离子束的发射角; 以及由反射器产生的被中和的光束入射的基板，以执行处理。 因此，所得中和束的入射角垂直于基板，而原始离子源和基板的表面的传播方向保持彼此垂直。