公开(公告)号：US20090281265A1

公开(公告)日：2009-11-12

申请号：US12289477

申请日：2008-10-29

Applicant: Sungjee Kim ,  JinSik Lee ,  Songjoo Oh

Inventor： Sungjee Kim ,  JinSik Lee ,  Songjoo Oh

IPC: C08G77/12

CPC classification number: C08G77/458 ,  C08L83/10 ,  Y10T428/2991 ,  Y10T428/2993 ,  Y10T428/2995 ,  Y10T428/2998

Abstract: Disclosed herein are a nanocrystal-polydimethylsiloxane composite and a method for preparing the same. More specifically, provided are a nanocrystal-polydimethylsiloxane composite in which one or more polydimethylsiloxane derivatives having urea cross-links are bound to the surface of a nanocrystal, and a method for preparing the same. The nanocrystal-polydimethylsiloxane composite comprises optically transparent polydimethylsiloxane with remarkably high durability, thus imparting improved luminescence efficiency and product reliability to various electronic devices, when applied as a luminescent material to the electronic devices.

Abstract translation: 本文公开了纳米晶体 - 聚二甲基硅氧烷复合材料及其制备方法。 更具体地，提供了一种纳米晶体 - 聚二甲基硅氧烷复合物，其中一个或多个具有尿素交联的聚二甲基硅氧烷衍生物与纳米晶体的表面结合，以及其制备方法。 纳米晶 - 聚二甲基硅氧烷复合材料包含具有非常高的耐久性的光学透明聚二甲基硅氧烷，从而当作为发光材料应用于电子器件时，可以赋予各种电子器件更好的发光效率和产品可靠性。

公开(公告)号：US07181266B2

公开(公告)日：2007-02-20

申请号：US10772425

申请日：2004-02-06

Applicant: John V. Frangioni ,  Moungi G. Bawendi ,  Sungjee Kim ,  Yong Taik Lim

Inventor： John V. Frangioni ,  Moungi G. Bawendi ,  Sungjee Kim ,  Yong Taik Lim

IPC: A61B5/00 ,  A61N5/06

CPC classification number: A61K49/0017 ,  A61K49/0067 ,  B82Y15/00 ,  G01N33/588 ,  Y10S977/813 ,  Y10S977/881 ,  Y10S977/904 ,  Y10S977/949 ,  Y10S977/954

Abstract: A lymphatic system can be imaged with emissive semiconductor nanocrystals, for example, in the near infrared.

Abstract translation: 淋巴系统可以用发射半导体纳米晶体成像，例如在近红外。

公开(公告)号：US09410959B2

公开(公告)日：2016-08-09

申请号：US13594719

申请日：2012-08-24

Applicant: Sungjee Kim ,  Moungi G. Bawendi

Inventor： Sungjee Kim ,  Moungi G. Bawendi

IPC: B32B5/16 ,  G01N33/58 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/88 ,  C30B7/00 ,  C30B29/60 ,  C30B33/00 ,  H01L21/02 ,  H01L29/06 ,  H01L29/165 ,  H01L29/205 ,  H01L29/225 ,  H01L29/267 ,  H01L51/42

CPC classification number: G01N33/588 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/883 ,  C30B7/00 ,  C30B29/605 ,  C30B33/00 ,  H01L21/0237 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02601 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/205 ,  H01L29/225 ,  H01L29/267 ,  H01L51/426 ,  Y02E10/549 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/777 ,  Y10S977/811 ,  Y10T428/12021 ,  Y10T428/12528 ,  Y10T428/12986 ,  Y10T428/294 ,  Y10T428/2991 ,  Y10T428/315

Abstract: A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.

Abstract translation: 半导体纳米晶体异质结构具有由第二半导体材料的外涂层包围的第一半导体材料的芯。 在激发时，一个载体可以基本上限于核心，另一个载体可以基本上局限于外涂层。

公开(公告)号：US20090267051A1

公开(公告)日：2009-10-29

申请号：US12318874

申请日：2009-01-12

Applicant: Sungjee Kim ,  JinSik Lee ,  SongJoo Oh

Inventor： Sungjee Kim ,  JinSik Lee ,  SongJoo Oh

IPC: H01L29/12 ,  B05D3/02

CPC classification number: H01L29/127 ,  B82Y10/00

Abstract: A method for preparing a quantum dot-inorganic matrix composite includes preparing an inorganic matrix precursor solution containing one or more quantum dot precursors, spin-coating the precursor solution on a substrate to form an inorganic matrix thin film, and heating the inorganic matrix thin film to form an inorganic matrix, while growing the quantum dot precursors into quantum dots in the inorganic matrix, thereby yielding a quantum dot-inorganic matrix composite. The quantum dot-inorganic matrix composite thus obtained has a structure in which the quantum dots have a high efficiency and are densely filled in an inorganic matrix. The quantum dot-inorganic matrix composites can be prepared using a low temperature process, and can be used for various displays and electronic device material applications.

Abstract translation: 制备量子点 - 无机基质复合物的方法包括制备含有一种或多种量子点前体的无机基质前体溶液，将前体溶液旋涂在基底上以形成无机基质薄膜，并加热无机基质薄膜 以形成无机基质，同时将量子点前体生长成无机基质中的量子点，从而产生量子点 - 无机基质复合物。 由此获得的量子点 - 无机基质复合体具有其中量子点具有高效率且密集地填充在无机基质中的结构。 量子点无机基质复合材料可以使用低温工艺制备，可用于各种显示器和电子器件材料应用。

公开(公告)号：US07601424B2

公开(公告)日：2009-10-13

申请号：US11543829

申请日：2006-10-06

Applicant: Moungi G. Bawendi ,  Sungjee Kim ,  Nathan E. Stott

Inventor： Moungi G. Bawendi ,  Sungjee Kim ,  Nathan E. Stott

IPC: B32B5/16

CPC classification number: C01B19/007 ,  B82Y30/00 ,  C01G9/08 ,  C01G11/02 ,  C01G13/00 ,  C01G21/21 ,  C01G28/00 ,  C01P2004/40 ,  C01P2004/64 ,  C01P2004/80 ,  C07F9/5004 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  C30B7/00 ,  C30B29/60 ,  Y10T428/12597 ,  Y10T428/2991 ,  Y10T428/2993 ,  Y10T428/2995 ,  Y10T428/2996 ,  Y10T428/2998

Abstract: A semiconductor nanocrystal associated with a polydentate ligand. The polydentate ligand stabilizes the nanocrystal.

Abstract translation: 与多齿配体相关的半导体纳米晶体。 多齿配体稳定纳米晶体。

公开(公告)号：US07390568B2

公开(公告)日：2008-06-24

申请号：US10638546

申请日：2003-08-12

Applicant: Sungjee Kim ,  Moungi G. Bawendi

Inventor： Sungjee Kim ,  Moungi G. Bawendi

IPC: B32B5/16

CPC classification number: G01N33/588 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/883 ,  C30B7/00 ,  C30B29/605 ,  C30B33/00 ,  H01L21/0237 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02601 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/205 ,  H01L29/225 ,  H01L29/267 ,  H01L51/426 ,  Y02E10/549 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/777 ,  Y10S977/811 ,  Y10T428/12021 ,  Y10T428/12528 ,  Y10T428/12986 ,  Y10T428/294 ,  Y10T428/2991 ,  Y10T428/315

Abstract: A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.

Abstract translation: 半导体纳米晶体异质结构具有由第二半导体材料的外涂层包围的第一半导体材料的芯。 在激发时，一个载体可以基本上限于核心，另一个载体可以基本上局限于外涂层。

公开(公告)号：US07160613B2

公开(公告)日：2007-01-09

申请号：US10641292

申请日：2003-08-15

Applicant: Moungi G. Bawendi ,  Sungjee Kim ,  Nathan E. Stott

Inventor： Moungi G. Bawendi ,  Sungjee Kim ,  Nathan E. Stott

IPC: B32B5/16

CPC classification number: C01B19/007 ,  B82Y30/00 ,  C01G9/08 ,  C01G11/02 ,  C01G13/00 ,  C01G21/21 ,  C01G28/00 ,  C01P2004/40 ,  C01P2004/64 ,  C01P2004/80 ,  C07F9/5004 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  C30B7/00 ,  C30B29/60 ,  Y10T428/12597 ,  Y10T428/2991 ,  Y10T428/2993 ,  Y10T428/2995 ,  Y10T428/2996 ,  Y10T428/2998

Abstract: A semiconductor nanocrystal associated with a polydentate ligand. The polydentate ligand stabilizes the nanocrystal.

公开(公告)号：US06607829B1

公开(公告)日：2003-08-19

申请号：US09625861

申请日：2000-07-26

Applicant: Moungi G. Bawendi ,  Frederic V. Mikulec ,  Sungjee Kim

Inventor： Moungi G. Bawendi ,  Frederic V. Mikulec ,  Sungjee Kim

IPC: B32B516

CPC classification number: C09K11/883 ,  B82Y20/00 ,  B82Y30/00 ,  C01B17/20 ,  C01B19/007 ,  C01P2002/72 ,  C01P2002/84 ,  C01P2004/04 ,  C01P2004/52 ,  C01P2004/64 ,  C01P2004/80 ,  C01P2004/86 ,  C01P2006/60 ,  C07F9/224 ,  C07F9/5304 ,  C09K11/02 ,  C09K11/565 ,  C09K11/885 ,  C09K11/892 ,  C30B7/00 ,  C30B7/14 ,  C30B29/46 ,  C30B29/48 ,  C30B29/60 ,  C30B29/605 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/777 ,  Y10S977/813 ,  Y10S977/824 ,  Y10S977/832 ,  Y10T428/12035 ,  Y10T428/12049 ,  Y10T428/12181 ,  Y10T428/12986 ,  Y10T428/2982 ,  Y10T428/2991 ,  Y10T428/2993

Abstract: Tellurium-containing nanocrystallites are produced by injection of a precursor into a hot coordinating solvent, followed by controlled growth and annealing. Nanocrystallites may include CdTe, ZnTe, MgTe, HgTe, or alloys thereof. The nanocrystallites can photoluminesce with quantum efficiencies as high as 70%.

Abstract translation: 含碲的纳米晶体通过将前体注入热配位溶剂中，随后进行受控生长和退火来制备。 纳米晶体可以包括CdTe，ZnTe，MgTe，HgTe或其合金。 纳米晶体的光致发光率可以高达70％。

公开(公告)号：US09757474B2

公开(公告)日：2017-09-12

申请号：US13640605

申请日：2011-04-07

Applicant: Sungjee Kim ,  Jutaek Nam

Inventor： Sungjee Kim ,  Jutaek Nam

IPC: A61K9/14 ,  A61K9/16 ,  A61K9/51 ,  A61K47/48 ,  A61K9/00 ,  A61K9/50 ,  A61K31/122 ,  A61K31/351 ,  A61K41/00 ,  A61N5/06 ,  B82Y5/00

CPC classification number: A61K47/6923 ,  A61K9/0019 ,  A61K9/5094 ,  A61K9/5115 ,  A61K31/122 ,  A61K31/351 ,  A61K41/0052 ,  A61N5/062 ,  B82Y5/00 ,  Y10S977/773 ,  Y10S977/906 ,  Y10T428/2982

Abstract: The present invention relates to a method for effectively delivering an anticancer drug into cancer cells by binding the anticancer drug to pH-sensitive metal nanoparticles so as to be separated from cancer cells. The pH-sensitive metal nanoparticles according to the present invention may be heated by photothermal therapy, thereby effectively killing cancer cells in conjunction with the isolated anticancer drug.

公开(公告)号：US20120319054A1

公开(公告)日：2012-12-20

申请号：US13594719

申请日：2012-08-24

Applicant: Sungjee Kim ,  Moungi G. Bawendi

Inventor： Sungjee Kim ,  Moungi G. Bawendi

IPC: H01B1/00 ,  B82Y30/00

CPC classification number: G01N33/588 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/883 ,  C30B7/00 ,  C30B29/605 ,  C30B33/00 ,  H01L21/0237 ,  H01L21/02409 ,  H01L21/02411 ,  H01L21/02521 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02601 ,  H01L29/0665 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/205 ,  H01L29/225 ,  H01L29/267 ,  H01L51/426 ,  Y02E10/549 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/777 ,  Y10S977/811 ,  Y10T428/12021 ,  Y10T428/12528 ,  Y10T428/12986 ,  Y10T428/294 ,  Y10T428/2991 ,  Y10T428/315

Abstract: A semiconductor nanocrystal heterostructure has a core of a first semiconductor material surrounded by an overcoating of a second semiconductor material. Upon excitation, one carrier can be substantially confined to the core and the other carrier can be substantially confined to the overcoating.

Abstract translation: 半导体纳米晶体异质结构具有由第二半导体材料的外涂层包围的第一半导体材料的芯。 在激发时，一个载体可以基本上限于核心，另一个载体可以基本上局限于外涂层。