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28 条记录 (耗时 0.014 秒)

    Method and structure for top-to-bottom I/O nets repair in a thin film transfer and join process
    4.
    发明授权
    Method and structure for top-to-bottom I/O nets repair in a thin film transfer and join process 失效
    在薄膜传输和连接过程中从上到下的I / O网络修复的方法和结构

    公开(公告)号：US06323045B1

    公开(公告)日：2001-11-27

    申请号：US09456590

    申请日：1999-12-08

    申请人： Christopher Cline ,  Nancy W. Hannon ,  Chandrika Prasad ,  Thomas A. Wassick ,  Roy Yu

    发明人： Christopher Cline ,  Nancy W. Hannon ,  Chandrika Prasad ,  Thomas A. Wassick ,  Roy Yu

    IPC分类号： G01R3126

    CPC分类号： H05K3/225 ,  H01L21/485 ,  H01L23/5382 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method and structure for providing top-to-bottom repair of a defective I/O net in a thin film transfer and join process. At least one C4 location and at least one capture pad are provided on a thin film substrate. The substrate is preferably ceramic. The C4 location of the defective net is severed by removal of a delete strap. The corresponding solder connection of the associated capture pad is also removed. A spare C4 location and capture pad are connected to provide a Z-repair line imbedded in the TF wiring structure. The Z-repair line is wired to the defective net.

    摘要翻译： 一种用于在薄膜转移和连接过程中提供缺陷I / O网络的从顶部到底部修复的方法和结构。 至少一个C4位置和至少一个捕获垫设置在薄膜基板上。 基材优选为陶瓷。 有缺陷的网的C4位置通过删除删除带被切断。 相关联的捕获垫的相应焊接连接也被去除。 连接备用C4位置和捕获垫以提供嵌入在TF布线结构中的Z维修线。 Z维修线路连接到有缺陷的网络。

    Sensor, method, and design structure for a low-k delamination sensor
    6.
    发明授权
    Sensor, method, and design structure for a low-k delamination sensor 有权
    低k分层传感器的传感器，方法和设计结构

    公开(公告)号：US07716992B2

    公开(公告)日：2010-05-18

    申请号：US12056627

    申请日：2008-03-27

    申请人： John J. Maloney ,  Wolfgang Sauter ,  Thomas A. Wassick ,  Jeffrey S. Zimmerman

    发明人： John J. Maloney ,  Wolfgang Sauter ,  Thomas A. Wassick ,  Jeffrey S. Zimmerman

    IPC分类号： G01B7/16

    CPC分类号： H01L23/585 ,  H01L22/34 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The invention generally relates to a design structure of a circuit design, and more particularly to a design structure of a delamination sensor for use with low-k materials. A delamination sensor includes at least one first sensor formed in a layered semiconductor structure and a second sensor formed in the layered semiconductor structure. The at least one first sensor is structured and arranged to detect a defect, and the second sensor is structured and arranged to identify an interface where the defect exists.

    摘要翻译： 本发明一般涉及一种电路设计的设计结构，更具体地说，涉及一种用于低k材料的分层传感器的设计结构。 分层传感器包括形成在层状半导体结构中的至少一个第一传感器和形成在层状半导体结构中的第二传感器。 所述至少一个第一传感器被构造和布置成检测缺陷，并且所述第二传感器被构造和布置成识别存在缺陷的界面。

    Laser-induced chemical vapor deposition of thin-film conductors
    7.
    发明授权
    Laser-induced chemical vapor deposition of thin-film conductors 失效
    激光诱导化学气相沉积的薄膜导体

    公开(公告)号：US5246745A

    公开(公告)日：1993-09-21

    申请号：US812686

    申请日：1991-12-23

    申请人： Thomas H. Baum ,  Paul B. Comita ,  John R. Lankard Sr. ,  Thoams F. Redmond ,  Thomas A. Wassick ,  Robert L. Jackson

    发明人： Thomas H. Baum ,  Paul B. Comita ,  John R. Lankard Sr. ,  Thoams F. Redmond ,  Thomas A. Wassick ,  Robert L. Jackson

    IPC分类号： C23C16/04 ,  H01L21/48 ,  H01L21/768 ,  H05K3/22

    CPC分类号： H05K3/225 ,  C23C16/047 ,  H01L21/485 ,  H01L21/76894 ,  H05K2203/107 ,  H05K2203/1338 ,  H05K2203/173

    摘要： Control of the local environment during pulsed laser removal of thin film circuit metallurgy is used to change the nature of the top surfaces. Interconnecting such laser treated surfaces with LCVD films results in different growth morphologies, dependent on the nature of the surface created and the debris generated during the ablation process. Flowing helium across the surface during the ablation process results in improved growth morphologies for the same laser writing conditions. A low power laser scan is used to induce metal deposition on the substrate without surface damage. This is followed by several scans at an intermediate laser power to deposit the desired thickness of metal (e.g., about 8 .mu.m). Lastly, a high power laser scan is used, either at the points of intersection between the existing metallurgy and the metal repair or across the entire deposit area. Thermal spreading or blooming is reduced by modulating the intensity of the laser source.

    摘要翻译： 在薄膜电路冶金的脉冲激光去除期间对局部环境的控制被用于改变顶表面的性质。 将这种激光处理的表面与LCVD膜相互连接导致不同的生长形态，这取决于所产生的表面的性质和消融过程中产生的碎屑。 在消融过程中，流过氦气的表面会导致相同激光写入条件下的生长形态的改善。 使用低功率激光扫描来诱导基板上的金属沉积而没有表面损伤。 随后在中间激光功率下进行多次扫描以沉积所需厚度的金属（例如，约8μm）。 最后，使用大功率激光扫描，无论是在现有冶金和金属修复之间或整个沉积区域的交点处。 通过调制激光源的强度来降低散热或开花。