公开(公告)号：US4437008A

公开(公告)日：1984-03-13

申请号：US256682

申请日：1981-04-23

申请人： Tadahito Matsuda ,  Masahide Okumura ,  Hisatake Yokouchi ,  Susumu Ozasa ,  Yasuo Kato

发明人： Tadahito Matsuda ,  Masahide Okumura ,  Hisatake Yokouchi ,  Susumu Ozasa ,  Yasuo Kato

IPC分类号： H01J37/147 ,  H01J37/24 ,  H01J37/302 ,  H01J3/14 ,  G06M3/14

CPC分类号： H01J37/24 ,  H01J37/302

摘要： In an electron beam control system wherein manual adjusting means is used for adjusting currents to flow through two deflection coils which serve to deflect an electron beam in directions of two, x and y axes, respectively; an electron beam control system wherein the manual adjusting means comprises a joy stick type variable resistor which can simultaneously deliver coil deflection signal components in the directions of the two axes through a single operation, and the signal components from the variable resistor are applied to the corresponding deflection coils as adjusting currents.

摘要翻译： 在电子束控制系统中，其中使用手动调节装置来调节流过两个偏转线圈的电流，这两个偏转线圈分别用于在两个x和y轴的方向上偏转电子束; 电子束控制系统，其中手动调节装置包括操纵杆式可变电阻器，其可以通过单次操作同时在两个轴线的方向上传送线圈偏转信号分量，并且来自可变电阻器的信号分量被施加到相应的 偏转线圈作为调整电流。

公开(公告)号：US06667415B1

公开(公告)日：2003-12-23

申请号：US08300245

申请日：1994-09-02

申请人： Fujio Yagihashi ,  Jun Watanabe ,  Minoru Takamizawa ,  Akinobu Tanaka ,  Yoshio Kawai ,  Tadahito Matsuda

发明人： Fujio Yagihashi ,  Jun Watanabe ,  Minoru Takamizawa ,  Akinobu Tanaka ,  Yoshio Kawai ,  Tadahito Matsuda

IPC分类号： C07C6976

CPC分类号： C07C69/734 ,  C07D309/12 ,  C07F7/1804 ,  G03F7/0045 ,  Y02P20/55

摘要： Disclosed are novel tert-butyl 4,4-bis(4′-hydroxyphenyl)pentanoate derivatives represented by the following general formula (I); wherein R1 represents a protective group which can be readily eliminated under an acidic condition, and R2 represents a hydrogen atom, a lower alkyl group or a lower alkoxy group: and high energy radiation-responsive positive resist materials using said novel derivatives as dissolution inhibitors.

摘要翻译： 公开了由以下通式（I）表示的新颖的4,4-双（4'-羟基苯基）戊酸叔丁酯衍生物：其中R 1表示在酸性条件下易于除去的保护基，R 代表氢原子，低级烷基或低级烷氧基;以及使用所述新衍生物作为溶解抑制剂的高能辐射响应正抗蚀材料。

公开(公告)号：US5624787A

公开(公告)日：1997-04-29

申请号：US466690

申请日：1995-06-06

申请人： Satoshi Watanabe ,  Katsuyuki Oikawa ,  Toshinobu Ishihara ,  Akinobu Tanaka ,  Tadahito Matsuda ,  Yoshio Kawai

发明人： Satoshi Watanabe ,  Katsuyuki Oikawa ,  Toshinobu Ishihara ,  Akinobu Tanaka ,  Tadahito Matsuda ,  Yoshio Kawai

IPC分类号： G03F7/004 ,  G03F7/039 ,  H01L21/027

CPC分类号： G03F7/0045 ,  G03F7/039 ,  Y10S430/115 ,  Y10S430/122

摘要： A chemically amplified, positive resist composition contains a trifluoromethanesulfonic or p-toluenesulfonic acid bis- or tris(p-tert-butoxyphenyl)sulfonium salt and a nitrogenous compound. The composition is highly sensitive to high energy radiation, especially KrF excimer laser and has high sensitivity, resolution and plasma etching resistance while the resulting resist pattern is heat resistant.

摘要翻译： 化学增幅阳性抗蚀剂组合物含有三氟甲磺酸或对甲苯磺酸双或三（对叔丁氧基苯基）锍盐和含氮化合物。 该组合物对高能辐射高度敏感，特别是KrF准分子激光器，并且具有高灵敏度，分辨率和等离子体耐蚀刻性，同时产生的抗蚀剂图案是耐热的。

公开(公告)号：US5414746A

公开(公告)日：1995-05-09

申请号：US146474

申请日：1993-11-01

申请人： Kimiyoshi Deguchi ,  Yoh Somemura ,  Kazunori Miyoshi ,  Tadahito Matsuda

发明人： Kimiyoshi Deguchi ,  Yoh Somemura ,  Kazunori Miyoshi ,  Tadahito Matsuda

IPC分类号： G03F1/22 ,  G03F1/26 ,  G21K1/06 ,  G21K5/00

CPC分类号： G03F1/22 ,  G03F1/26 ,  G21K1/06

摘要： An X-ray exposure mask comprises an X-ray transmission layer and an X-ray absorption layer formed on the X-ray transmission layer and being patterned. The X-ray absorption layer has a first region having a first thickness and a second region having a second thickness less than the first thickness.

摘要翻译： X射线曝光掩模包括形成在X射线透射层上并被图案化的X射线透射层和X射线吸收层。 X射线吸收层具有第一厚度的第一区域和具有小于第一厚度的第二厚度的第二区域。

公开(公告)号：US4634645A

公开(公告)日：1987-01-06

申请号：US721306

申请日：1985-04-09

申请人： Tadahito Matsuda ,  Katsuhiro Harada ,  Shigeru Moriya ,  Tetsuyoshi Ishii

发明人： Tadahito Matsuda ,  Katsuhiro Harada ,  Shigeru Moriya ,  Tetsuyoshi Ishii

IPC分类号： G03F7/00 ,  G03F7/40 ,  G03C5/00

CPC分类号： G03F7/40 ,  G03F7/0035 ,  Y10S430/143 ,  Y10S430/168

摘要： A resist pattern is formed on a substrate by forming a resist on a substrate and radiating an energy beam carrying predetermined pattern information onto the resist, thereby forming a recessed pattern in a surface portion of the resist so as not to extend through the resist. A flat mask layer is formed on the resist including the recessed pattern. The mask layer is uniformly etched along a direction of thickness thereof until at least a surface of the resist is exposed to allow the mask layer to remain on at least a bottom of the recessed pattern, thereby forming a mask pattern comprising the remaining residual mask layer. Finally, the resist is etched by using the mask pattern as an etching mask.

摘要翻译： 通过在基板上形成抗蚀剂并将载有预定图案信息的能量束辐射到抗蚀剂上，从而在抗蚀剂的表面部分形成凹陷图形，从而在基板上形成抗蚀剂图案，以便不延伸通过抗蚀剂。 在包括凹陷图案的抗蚀剂上形成平坦的掩模层。 沿其厚度方向均匀地蚀刻掩模层，直到抗蚀剂的至少一个表面露出，以使掩模层保持在至少凹陷图案的底部，从而形成包括剩余的残留掩模层的掩模图案 。 最后，通过使用掩模图案作为蚀刻掩模蚀刻抗蚀剂。

公开(公告)号：US4489241A

公开(公告)日：1984-12-18

申请号：US386579

申请日：1982-06-09

申请人： Tadahito Matsuda ,  Tsuneo Okubo ,  Susumu Ozasa ,  Norio Saitou ,  Haruo Yoda

发明人： Tadahito Matsuda ,  Tsuneo Okubo ,  Susumu Ozasa ,  Norio Saitou ,  Haruo Yoda

IPC分类号： H01J37/304 ,  H01L21/027 ,  H01L21/30 ,  H01L23/544 ,  H01J37/317

CPC分类号： H01L23/544 ,  H01J37/3045 ,  H01L21/0277 ,  H01L21/30 ,  H01L2223/54453 ,  H01L2924/0002

摘要： An exposure method with an electron beam exposure apparatus in which an electron beam is emitted onto a substrate such as a silicon wafer on which an electron-beam sensitive resist is coated, thereby directly forming or writing patterns. A substrate having thereon a number of chips are divided into blocks, which each contain a plurality of chips. Marks are provided on each of the blocks, the positions of the marks are detected and the writing exposure positions of the chips within each block are modified on the basis of the detection results. According to this invention, efficient writing exposure can be made with high accuracy.

摘要翻译： 具有电子束曝光装置的曝光方法，其中电子束被发射到诸如其上涂覆有电子束敏感抗蚀剂的硅晶片的基板上，从而直接形成或书写图案。 其上具有多个芯片的基板被分成块，每个块包含多个芯片。 在每个块上提供标记，检测标记的位置，并且基于检测结果修改每个块内的码片的写入曝光位置。 根据本发明，可以高精度地进行有效的写入曝光。

公开(公告)号：US06841334B2

公开(公告)日：2005-01-11

申请号：US10683107

申请日：2003-10-10

申请人： Fujio Yagihashi ,  Tomoyoshi Furihata ,  Jun Watanabe ,  Akinobu Tanaka ,  Yoshio Kawai ,  Tadahito Matsuda

发明人： Fujio Yagihashi ,  Tomoyoshi Furihata ,  Jun Watanabe ,  Akinobu Tanaka ,  Yoshio Kawai ,  Tadahito Matsuda

IPC分类号： C07C381/12 ,  C08K5/36 ,  C08L25/00 ,  C08L25/18 ,  G03F7/004 ,  G03F7/029 ,  G03F7/039 ,  H01L21/027 ,  H01L21/30 ,  G03F7/038

CPC分类号： G03F7/039 ,  C07C381/12 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/115

摘要： Disclosed are novel onium salts represented by general formula (R)3S+M, wherein three R's may be the same or different, each being an aryl group, provided that at least one of R's is a t-alkoxy substituted phenyl group, and M is an anion capable of forming the sulfonium salts; and high energy radiation-responsive positive resist materials using said novel onium salts as acid generator.

摘要翻译： 公开了由通式（R）3S + M表示的新型鎓盐，其中三个R可以相同或不同，各自为芳基，条件是R的至少一个为叔烷氧基取代的苯基， M是能形成锍盐的阴离子; 和使用所述新型鎓盐作为酸发生剂的高能辐射响应正抗蚀材料。

公开(公告)号：US4808829A

公开(公告)日：1989-02-28

申请号：US63018

申请日：1987-06-17

申请人： Masahide Okumura ,  Takashi Matsuzaka ,  Genya Matsuoka ,  Kazumi Iwadate ,  Tadahito Matsuda ,  Ryoichi Yamaguchi

发明人： Masahide Okumura ,  Takashi Matsuzaka ,  Genya Matsuoka ,  Kazumi Iwadate ,  Tadahito Matsuda ,  Ryoichi Yamaguchi

IPC分类号： G03F9/00 ,  G01Q30/02 ,  G01Q30/04 ,  H01J37/304 ,  H01L21/027 ,  H01L21/30 ,  G01N23/22

CPC分类号： H01J37/3045

摘要： A mark position detection system used in a charged particle beam apparatus and including detection circuit for detecting a reflected electron generated at a mark when the mark is scanned with a charged particle beam, to obtain a mark signal, and signal processing circuit for comparing the mark signal from the detection circuit with a predetermined threshold level to find the position of the charged particle beam at a time the mark signal traverses the threshold level, thereby detecting the position of a mark edge, is disclosed in which, when the mark signal traverses the threshold level and has a peak value exceeding a predetermined value, it is determined by the signal processing circuit that the position of the charged particle beam at a time point at which the mark signal traverses the threshold level is the position of the mark.

摘要翻译： 一种用于带电粒子束装置的标记位置检测系统，包括：检测电路，用于检测用带电粒子束扫描标记时在标记处产生的反射电子，以获得标记信号;以及信号处理电路，用于比较标记 来自检测电路的信号具有预定的阈值电平，以在标记信号穿过阈值电平的时候找到带电粒子束的位置，从而检测标记边缘的位置，其中当标记信号穿过 阈值电平并且具有超过预定值的峰值，则由信号处理电路确定在标记信号穿过阈值电平的时间点处的带电粒子束的位置是标记的位置。

公开(公告)号：US5636004A

公开(公告)日：1997-06-03

申请号：US515583

申请日：1995-08-16

申请人： Akihiro Ootaka ,  Yoshio Kawai ,  Tadahito Matsuda

发明人： Akihiro Ootaka ,  Yoshio Kawai ,  Tadahito Matsuda

IPC分类号： G03F7/20 ,  G03B27/32 ,  H01L21/30

CPC分类号： G03F7/70058 ,  G03F7/70333 ,  G03F7/70475 ,  G03F7/70883

摘要： In a projection exposure method of irradiating illumination light from an illumination light source onto a photomask made of a transparent substrate with a periodic mask pattern, and projecting the resultant transmitted light from the photomask on a wafer through a projection system, thereby forming an optical image of the mask pattern on the wafer, projection/exposure with respect to the wafer is performed by a main exposure operation and a sub-exposure operation to be performed after the main exposure operation. The main exposure operation is performed by irradiating the photomask with the illumination light whose coherency becomes 0.3 or less when a period L of the mask pattern on the image plane of the optical system is not more than a value obtained by doubling an exposure wavelength .lambda. of the illumination light source, and dividing the resultant value by a numerical aperture of the projection system. The sub-exposure operation is performed by irradiating the photomask with the illumination light having a coherency of 0.3 or less at at least one of positions separated from a position in the main exposure operation in the optical axis direction by .DELTA.=.lambda./[2{1-(1-.lambda..sup.2 /L.sup.2).sup.1/2 }], thereby forming a periodic pattern having a period 1/2 the period L on the wafer.

摘要翻译： 在将照明光源的照明光照射到由周期性掩模图案的透明基板构成的光掩模上的投影曝光方法中，通过投影系统将来自光掩模的透过光投射到晶片上，由此形成光学图像 通过在主曝光操作之后进行的主曝光操作和副曝光操作来进行相对于晶片的投影/曝光。 主曝光操作是通过在光学系统的像面上的掩模图案的周期L不大于通过使光学系统的像面上的曝光波长λ倍增获得的值的情况下照射具有相干性为0.3以下的照明光的光掩模来进行的 照明光源，并将得到的值除以投影系统的数值孔径。 副曝光操作是通过在与主曝光操作中在光轴方向上的位置分开的至少一个位置处具有0.3或更小的相干性的照明光照射光掩模来执行的，即DELTA =λ/ [2 { 1-（1-lambda 2 / L2）+ E，fra 1/2 + EE}]，从而形成具有周期+ E，fra 1/2 + EE的晶片周期L的周期性图案。