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公开(公告)号：US5394829A
公开(公告)日：1995-03-07
申请号：US35607
申请日：1993-03-23
CPC分类号： C30B15/00 , Y10T117/1032 , Y10T117/1064 , Y10T117/1068 , Y10T117/1088
摘要： A device for pulling a silicon single crystal is constructed so as to preclude deposition of a SiO-derived substance on graphite parts inside the device and prevent the graphite parts from deterioration, elongate the duration of continuous use of the device in a great measure, and simplify the disassembly and reassembly of the device.This device pulls a silicon single crystal in an atmosphere of inert gas by the Czochralski method, which device is chracterized by comprising a crucible 1 for accommodating a molten silicon mass 2, a heater 3 disposed round the periphery of the crucible 1, an outer member 14 forming a pulling chamber 6 for accomodating the crucible 1, an inert gas inlet part 15 disposed in the upper part of the pulling chamber 6, and an inert gas outlet part 16 separated from the inert gas inlet part 15 in the same upper part of the pulling chamber 6.
摘要翻译： 构造用于拉制单晶硅的装置，以防止SiO元素沉积在器件内的石墨部件上，防止石墨部件变质，延长器件连续使用的持续时间，以及 简化了装置的拆卸和重新组装。 该装置通过Czochralski法在惰性气体气氛中拉出硅单晶，该装置通过包括用于容纳熔融硅团2的坩埚1，设置在坩埚1的周边的加热器3，外部构件 形成用于容纳坩埚1的拉动室6，设置在拉动室6的上部的惰性气体入口部15和与惰性气体出口部16分离的惰性气体出口部16，惰性气体出口部16在同一上部 拉动室6。
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公开(公告)号：US5885365A
公开(公告)日：1999-03-23
申请号：US820387
申请日：1997-03-12
申请人： Shiniti Sugai , Kouzou Yokota , Tadashi Niwayama , Michiaki Oda , Shiniti Kon
发明人： Shiniti Sugai , Kouzou Yokota , Tadashi Niwayama , Michiaki Oda , Shiniti Kon
CPC分类号： C30B15/10 , B08B9/08 , C30B35/002
摘要： A method for cleaning and drying crucibles for use in pulling single crystals by the Czochralski method after transportation of the crucibles, includes cleaning a crucible in a cleaning process; warming the crucible with pure water heated at a temperature of at least 50.degree. C.; and drying the warmed crucible under ambient conditions.
摘要翻译： 在坩埚运输之后，通过切克劳斯基（Czochralski）法拉取单晶的坩埚清洗和干燥方法包括在清洗过程中清洁坩埚; 用在至少50℃的温度下加热的纯水加热坩埚。 并在环境条件下干燥加热的坩埚。
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