公开(公告)号：US08178378B2

公开(公告)日：2012-05-15

申请号：US12909204

申请日：2010-10-21

申请人： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

发明人： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC分类号： H01L21/56

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/20

摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

摘要翻译： 垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。 与n电极接触的n型氮化物半导体层的表面是平坦的。

公开(公告)号：US20110210351A1

公开(公告)日：2011-09-01

申请号：US13034136

申请日：2011-02-24

申请人： Je Won KIM ,  Tae Sung JANG ,  Jong Gun WOO ,  Jong Ho LEE

发明人： Je Won KIM ,  Tae Sung JANG ,  Jong Gun WOO ,  Jong Ho LEE

IPC分类号： H01L33/08

CPC分类号： H01L33/08 ,  H01L27/156 ,  H01L33/50 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor light emitting device includes: a substrate; a plurality of light emitting cells arranged on the substrate, each of the light emitting cells including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light; an interconnection structure electrically connecting at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of the light emitting cell to at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of another light emitting cell; and a light conversion part formed in at least a portion of a light emitting region defined by the plurality of light emitting cells, the light conversion part including at least one of a red light conversion part having a red light conversion material and a green light conversion part having a green light conversion material.

摘要翻译： 一种半导体发光器件，包括：衬底; 布置在基板上的多个发光单元，每个发光单元包括第一导电型半导体层，第二导电型半导体层和设置在其间的有源层，以发射蓝色光; 互连结构，将所述发光单元的所述第一导电型半导体层和所述第二导电型半导体层中的至少一个电连接到所述第一导电型半导体层和所述第二导电型半导体层中的至少一个， 型半导体层; 以及形成在由所述多个发光单元限定的发光区域的至少一部分中的光转换部分，所述光转换部分包括具有红光转换材料的红光转换部分和绿光转换部分中的至少一个 具有绿光转换材料的部分。

公开(公告)号：US20110033965A1

公开(公告)日：2011-02-10

申请号：US12909204

申请日：2010-10-21

申请人： Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

发明人： Sang Ho YOON ,  Su Yeol LEE ,  Doo Go BAIK ,  Seok Beom CHOI ,  Tae Sung JANG ,  Jong Gun WOO

IPC分类号： H01L33/44

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/20

摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

摘要翻译： 垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。 与n电极接触的n型氮化物半导体层的表面是平坦的。

公开(公告)号：US07838317B2

公开(公告)日：2010-11-23

申请号：US12544868

申请日：2009-08-20

申请人： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

发明人： Sang Ho Yoon ,  Su Yeol Lee ,  Doo Go Baik ,  Seok Beom Choi ,  Tae Sung Jang ,  Jong Gun Woo

IPC分类号： H01L21/56

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L33/20

摘要： A vertical nitride-based semiconductor LED comprises a structure support layer; a p-electrode formed on the structure support layer; a p-type nitride semiconductor layer formed on the p-electrode; an active layer formed on the p-type nitride semiconductor layer; an n-type nitride semiconductor layer formed on the active layer; an n-electrode formed on a portion of the n-type nitride semiconductor layer; and a buffer layer formed on a region of the n-type nitride semiconductor layer on which the n-electrode is not formed, the buffer layer having irregularities formed thereon. The surface of the n-type nitride semiconductor layer coming in contact with the n-electrode is flat.

摘要翻译： 垂直氮化物基半导体LED包括结构支撑层; 形成在结构支撑层上的p电极; 形成在p电极上的p型氮化物半导体层; 形成在p型氮化物半导体层上的有源层; 形成在有源层上的n型氮化物半导体层; 形成在n型氮化物半导体层的一部分上的n电极; 以及形成在其上未形成有n电极的n型氮化物半导体层的区域上的缓冲层，其上形成有凹凸。 与n电极接触的n型氮化物半导体层的表面是平坦的。

公开(公告)号：US20080048206A1

公开(公告)日：2008-02-28

申请号：US11742818

申请日：2007-05-01

申请人： Su Yeol LEE ,  Bang Won OH ,  Doo Go BAIK ,  Tae Sung JANG ,  Jong Gun WOO ,  Seok Beom CHOI ,  Sang Ho YOON ,  Dong Woo KIM ,  In Tae YEO

发明人： Su Yeol LEE ,  Bang Won OH ,  Doo Go BAIK ,  Tae Sung JANG ,  Jong Gun WOO ,  Seok Beom CHOI ,  Sang Ho YOON ,  Dong Woo KIM ,  In Tae YEO

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/387 ,  H01L33/20 ,  H01L33/22 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of manufacturing a vertical GaN-based LED comprises forming a light emission structure in which an n-type GaN-based semiconductor layer, an active layer, and a p-type GaN-based semiconductor layer are sequentially laminated on a substrate; etching the light emission structure such that the light emission structure is divided into units of LED; forming a p-electrode on each of the divided light emission structures; filling a non-conductive material between the divided light emission structures; forming a metal seed layer on the resulting structure; forming a first plated layer on the metal seed layer excluding a region between the light emission structures; forming a second plated layer on the metal seed layer between the first plated layers; separating the substrate from the light emission structures; removing the non-conductive material between the light emission structures exposed by separating the substrate; forming an n-electrode on the n-type GaN-based semiconductor layer; and removing portions of the metal seed layer and the second plated layer between the light emission structures.

摘要翻译： 制造垂直GaN基LED的方法包括：形成其中n型GaN基半导体层，有源层和p型GaN基半导体层依次层压在基板上的发光结构; 蚀刻发光结构，使得发光结构被分为LED单元; 在每个划分的发光结构上形成p电极; 在分开的发光结构之间填充非导电材料; 在所得结构上形成金属种子层; 在所述金属种子层上形成除了所述发光结构之间的区域的第一镀层; 在所述第一镀层之间的所述金属种子层上形成第二镀层; 将衬底与发光结构分离; 去除通过分离衬底而暴露的发光结构之间的非导电材料; 在n型GaN基半导体层上形成n电极; 以及去除所述发光结构之间的所述金属种子层和所述第二镀层的部分。

公开(公告)号：US20150126022A1

公开(公告)日：2015-05-07

申请号：US14336082

申请日：2014-07-21

申请人： Tae Hun KIM ,  Sung Joon KIM ,  Young Kyu SUNG ,  Wan Ho LEE ,  Tae Sung JANG ,  Tae Young PARK ,  Wan Tae LIM

发明人： Tae Hun KIM ,  Sung Joon KIM ,  Young Kyu SUNG ,  Wan Ho LEE ,  Tae Sung JANG ,  Tae Young PARK ,  Wan Tae LIM

IPC分类号： H01L21/223 ,  H01L21/285

CPC分类号： H01L21/2236 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32 ,  H01L33/40 ,  H01L2933/0016

摘要： According to an example embodiment, a method includes forming a nitrogen vacancy surface layer by treating a surface of an n-type nitride semiconductor with inert gas plasma, and forming an oxygen-added nitride film by treating a surface of the nitrogen vacancy surface layer with oxygen-containing gas plasma, and forming an electrode on the oxygen-added nitride film. The nitrogen vacancy surface layer lacks a nitrogen element.

摘要翻译： 根据示例性实施例，一种方法包括通过用惰性气体等离子体处理n型氮化物半导体的表面来形成氮空位表面层，并且通过用氮气空隙表面层的表面处理形成添加氧的氮化物膜 含氧气体等离子体，并在氧加成氮化物膜上形成电极。 氮空位表层缺少氮元素。

公开(公告)号：US20140197374A1

公开(公告)日：2014-07-17

申请号：US14239231

申请日：2011-08-17

申请人： Seok Min Hwang ,  Jin Bock Lee ,  Tae Sung Jang ,  Jong Gun Woo

发明人： Seok Min Hwang ,  Jin Bock Lee ,  Tae Sung Jang ,  Jong Gun Woo

IPC分类号： H01L33/40

CPC分类号： H01L33/405 ,  H01L33/44 ,  H01L2933/0016

摘要： There is provided a method of manufacturing a nitride semiconductor light emitting device, the method including: forming a light emitting structure on a substrate, the light emitting structure including first and second conductivity-type nitride semiconductor layers with an active layer interposed therebetween; forming a first conductivity-type nitride semiconductor layer, an active layer and a second conductivity-type nitride semiconductor layer sequentially stacked on a substrate; forming a first electrode to be connected to the first conductivity-type nitride semiconductor layer; forming a photoresist film on the second conductivity-type nitride semiconductor layer to expose a portion of the second conductivity-type nitride semiconductor layer; and forming a reflective metal layer and a barrier metal layer as a second electrode consecutively on the portion of the second conductivity-type nitride semiconductor layer exposed by the photoresist film and removing the photoresist film.

摘要翻译： 提供了一种制造氮化物半导体发光器件的方法，所述方法包括：在衬底上形成发光结构，所述发光结构包括介于其间的有源层的第一和第二导电型氮化物半导体层; 形成依次堆叠在基板上的第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层; 形成与第一导电型氮化物半导体层连接的第一电极; 在所述第二导电型氮化物半导体层上形成光致抗蚀剂膜以暴露所述第二导电型氮化物半导体层的一部分; 并且在由光致抗蚀剂膜暴露的第二导电型氮化物半导体层的部分上连续形成反射金属层和阻挡金属层作为第二电极，并除去光致抗蚀剂膜。

公开(公告)号：US08664020B2

公开(公告)日：2014-03-04

申请号：US12620928

申请日：2009-11-18

申请人： Tae Sung Jang ,  Su Yeol Lee ,  Jong Gun Woo

发明人： Tae Sung Jang ,  Su Yeol Lee ,  Jong Gun Woo

IPC分类号： H01L21/00

CPC分类号： H01L33/20 ,  H01L33/22

摘要： Disclosed is a semiconductor light emitting device, and a method of manufacturing the same. The semiconductor light emitting device includes a first conductivity type semiconductor layer, an active layer disposed on the top of the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the top of the active layer and comprising light extraction patterns in the top thereof, the light extraction patterns each having a columnar portion and a hemispherical top portion.

摘要翻译： 公开了一种半导体发光器件及其制造方法。 半导体发光器件包括第一导电类型半导体层，设置在第一导电类型半导体层的顶部上的有源层和设置在有源层的顶部上的第二导电类型半导体层，并且包括在第 其顶部具有各自具有柱状部分和半球形顶部部分的光提取图案。

公开(公告)号：US20100133570A1

公开(公告)日：2010-06-03

申请号：US12620928

申请日：2009-11-18

申请人： Tae Sung JANG ,  Su Yeol Lee ,  Jong Gun Woo

发明人： Tae Sung JANG ,  Su Yeol Lee ,  Jong Gun Woo

IPC分类号： H01L33/00 ,  H01L21/30

CPC分类号： H01L33/20 ,  H01L33/22

摘要： Disclosed is a semiconductor light emitting device, and a method of manufacturing the same. The semiconductor light emitting device includes a first conductivity type semiconductor layer, an active layer disposed on the top of the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the top of the active layer and comprising light extraction patterns in the top thereof, the light extraction patterns each having a columnar portion and a hemispherical top portion.

摘要翻译： 公开了一种半导体发光器件及其制造方法。 半导体发光器件包括第一导电类型半导体层，设置在第一导电类型半导体层的顶部上的有源层和设置在有源层的顶部上的第二导电类型半导体层，并且包括在第 其顶部具有各自具有柱状部分和半球形顶部部分的光提取图案。

公开(公告)号：US07372078B2

公开(公告)日：2008-05-13

申请号：US11581003

申请日：2006-10-16

申请人： Tae Sung Jang ,  Su Yeol Lee ,  Seok Beom Choi

发明人： Tae Sung Jang ,  Su Yeol Lee ,  Seok Beom Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/46 ,  H01L33/0079 ,  H01L33/385

摘要： A vertical GaN-based LED includes: an n-electrode; a light-emitting structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially formed under the n-electrode; a p-electrode formed under the light-emitting structure; a passivation layer formed to cover the side and bottom surfaces of the light-emitting structure and expose a predetermined portion of the p-electrode, the passivation layer being formed of a distributed Bragg reflector (DBR); a plating seed layer formed under the passivation layer and the p-electrode; and a support layer formed under the plating seed layer.

摘要翻译： 垂直GaN基LED包括：n电极; 在n电极下依次形成n型GaN层，有源层和p型GaN层的发光结构; 形成在发光结构下的p电极; 钝化层，其形成为覆盖所述发光结构的侧表面和底表面并暴露所述p电极的预定部分，所述钝化层由分布式布拉格反射器（DBR）形成; 形成在钝化层下面的电镀种子层和p电极; 以及形成在电镀种子层下的支撑层。