Process for fabricating a semiconductor device
    2.
    发明授权
    Process for fabricating a semiconductor device 失效
    制造半导体器件的工艺

    公开(公告)号:US4654113A

    公开(公告)日:1987-03-31

    申请号:US698901

    申请日:1985-02-06

    摘要: A method of forming an insulating layer having a planar surf on a lower wiring layer having given patterns steps at the shoulders of the patterns. On a lower wiring layer, a lower insulating layer is formed and a heat resistive material is coated over the lower insulative layer to form a substantially a planar top surface and to fill cavities appearing in the surface of the lower insulating layer with the material. Then, etching is carried out to preserve the profile of the surface of the coating layer and to remove the coating layer at portions where through-holes are to be formed. Any cavities in the surface of the lower insulating layer remain filled with the material after etching. An upper insulating layer is deposited on the exposed lower insulating layer and the remaining part of the coating layer. Through-holes and an upper wiring layer of given patterns are formed so that the upper wiring layer has no contact with the remaining part of the coating layer and so that the remaining part of the coating layer is never externally exposed.

    摘要翻译: 在图案的肩部具有给定图案步骤的下布线层上形成具有平面冲浪的绝缘层的方法。 在下布线层上,形成下绝缘层,并且在下绝缘层上涂覆耐热材料以形成基本上平坦的顶表面,并用该材料填充出现在下绝缘层表面的空腔。 然后,进行蚀刻以保持涂层表面的轮廓,并在要形成通孔的部分去除涂层。 蚀刻后,下绝缘层的表面中的任何空腔都保持填充材料。 在暴露的下绝缘层和涂层的其余部分上沉积上绝缘层。 形成具有给定图案的通孔和上布线层,使得上布线层与涂层的剩余部分没有接触,从而使外涂层的剩余部分不会外露。