公开(公告)号：US08921887B2

公开(公告)日：2014-12-30

申请号：US13221319

申请日：2011-08-30

申请人： Kumi Masunaga ,  Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Kumi Masunaga ,  Ryota Kitagawa ,  Akira Fujimoto ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/62 ,  H01L33/38

CPC分类号： H01L33/405 ,  H01L33/38 ,  H01L2933/0016 ,  H01L2933/0083

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion.

摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 该器件还包括与第一半导体层具有电连续性的第一电极层和设置在第二半导体层上的第二电极层，第二电极层包括厚度不小于10纳米且不大于100纳米的金属部分 沿着从第一半导体层到第二半导体层的方向。 多个孔沿着该方向穿过金属部分，沿着具有等于10纳米且不超过5微米的等效圆直径的方向观察每个孔，并且在第二半导体层和第二半导体层之间设置肖特基势垒 金属部分。

公开(公告)号：US20130075771A1

公开(公告)日：2013-03-28

申请号：US13412044

申请日：2012-03-05

申请人： Akira FUJIMOTO ,  Tsutomu NAKANISHI ,  Ryota KITAGAWA ,  Kenji NAKAMURA ,  Shinji NUNOTANI ,  Takanobu KAMAKURA

发明人： Akira FUJIMOTO ,  Tsutomu NAKANISHI ,  Ryota KITAGAWA ,  Kenji NAKAMURA ,  Shinji NUNOTANI ,  Takanobu KAMAKURA

IPC分类号： H01L33/10

CPC分类号： H01L33/30 ,  H01L33/10 ,  H01L33/38

摘要： According to one embodiment, a semiconductor light emitting device includes first and second electrode layers, a and second semiconductor layers, a light emitting layer and a first intermediate layer. The first electrode layer has a metal portion having through-holes. The second electrode layer is stacked with the first electrode layer along a stacked direction, and light-reflective. The first semiconductor layer is provided between the first and second electrode layers, and has a first conductivity type. The second semiconductor layer is provided between the first semiconductor layer and the second electrode layer, and has a second conductivity type. The light emitting layer is provided between the first and second semiconductor layers. The first intermediate layer is provided between the second semiconductor layer and the second electrode layer, transmissive to light emitted from the light emitting layer, and includes first contact portions and a first non-contact portion.

摘要翻译： 根据一个实施例，半导体发光器件包括第一和第二电极层，第一和第二半导体层，发光层和第一中间层。 第一电极层具有具有通孔的金属部分。 第二电极层沿堆叠方向与第一电极层堆叠并且具有光反射性。 第一半导体层设置在第一和第二电极层之间，并且具有第一导电类型。 第二半导体层设置在第一半导体层和第二电极层之间，具有第二导电型。 发光层设置在第一和第二半导体层之间。 第一中间层设置在第二半导体层和第二电极层之间，对从发光层发射的光透射，并且包括第一接触部分和第一非接触部分。

公开(公告)号：US20120132948A1

公开(公告)日：2012-05-31

申请号：US13229972

申请日：2011-09-12

申请人： Shinji Nunotani ,  Masaaki Ogawa ,  Koji Asakawa ,  Ryota Kitagawa ,  Akira Fujimoto ,  Takanobu Kamakura

发明人： Shinji Nunotani ,  Masaaki Ogawa ,  Koji Asakawa ,  Ryota Kitagawa ,  Akira Fujimoto ,  Takanobu Kamakura

IPC分类号： H01L33/36

CPC分类号： H01L33/38 ,  H01L2933/0016

摘要： According to one embodiment, a semiconductor light emitting device includes a light emitter, a first and a second electrode layer, a pad electrode and an auxiliary electrode portion. The emitter includes a first semiconductor layer provided on one side of the emitter, a second semiconductor layer provided on one other side of the emitter, and a light emitting layer provided between the first and second semiconductor layers. The first electrode layer is provided on opposite side of the second semiconductor layer from the first semiconductor layer and includes a metal layer and a plurality of apertures penetrating through the metal layer. The second electrode layer is electrically continuous with the first semiconductor layer. The pad electrode is electrically continuous with the first electrode layer. The auxiliary electrode portion is electrically continuous with the first electrode layer and extends in a second direction orthogonal to the first direction.

摘要翻译： 根据一个实施例，半导体发光器件包括光发射器，第一和第二电极层，焊盘电极和辅助电极部分。 发射极包括设置在发射极一侧的第一半导体层，设置在发射极的另一侧的第二半导体层以及设置在第一和第二半导体层之间的发光层。 第一电极层设置在第二半导体层的与第一半导体层相反的一侧上，并且包括金属层和贯穿金属层的多个孔。 第二电极层与第一半导体层电连接。 焊盘电极与第一电极层电连接。 辅助电极部分与第一电极层电连续并沿与第一方向正交的第二方向延伸。

公开(公告)号：US20120056155A1

公开(公告)日：2012-03-08

申请号：US13037990

申请日：2011-03-01

申请人： Koji Asakawa ,  Akira Fujimoto ,  Ryota Kitagawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Eishi Tsutsumi ,  Masaaki Ogawa

发明人： Koji Asakawa ,  Akira Fujimoto ,  Ryota Kitagawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Eishi Tsutsumi ,  Masaaki Ogawa

IPC分类号： H01L33/06 ,  H01L33/38 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L33/38 ,  H01L33/405 ,  H01L2933/0016

摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, and a second electrode layer. The structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer between the first semiconductor layer and the second semiconductor layer. The first electrode layer includes a metal portion, a plurality of first opening portions, and at least one second opening portion. The metal portion has a thickness of not less than 10 nanometers and not more than 200 nanometers along a direction from the first semiconductor layer toward the second semiconductor layer. The plurality of first opening portions each have a circle equivalent diameter of not less than 10 nanometers and not more than 1 micrometer. The at least one second opening portion has a circle equivalent diameter of more than 1 micrometer and not more than 30 micrometers.

摘要翻译： 半导体发光器件包括结构体，第一电极层和第二电极层。 结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层以及第一半导体层和第二半导体层之间的发光层。 第一电极层包括金属部分，多个第一开口部分和至少一个第二开口部分。 金属部分沿着从第一半导体层朝向第二半导体层的方向具有不小于10纳米且不大于200纳米的厚度。 多个第一开口部分的圆当量直径不小于10纳米且不超过1微米。 至少一个第二开口部分具有大于1微米且不超过30微米的圆当量直径。

公开(公告)号：US20060163593A1

公开(公告)日：2006-07-27

申请号：US11372059

申请日：2006-03-10

申请人： Takanobu Kamakura

发明人： Takanobu Kamakura

IPC分类号： H01L33/00

CPC分类号： H01L33/14 ,  H01L33/02 ,  H01L33/30

摘要： A semiconductor light emitting device includes a hetero-configuration having an active layer, a first clad layer, and a second clad layer, the active layer being interposed between the clad layers. The active layer emits light when charge carriers are injected. The first and second clad layers keep the injected charge carriers in the active layer. The hetero-configuration is interposed between a first and a second electrode. The semiconductor light emitting device further includes a dense defect-injected layer. This layer is provided between the first electrode and the hetero-configuration. The dense defect-injected layer is made of material more fragile than the hetero-configuration. The dense defect-injected layer prevents defects injected into the hetero-configuration.

公开(公告)号：US07038243B1

公开(公告)日：2006-05-02

申请号：US08578980

申请日：1995-12-27

申请人： Takanobu Kamakura

发明人： Takanobu Kamakura

IPC分类号： H01L29/22

CPC分类号： H01L33/14 ,  H01L33/02 ,  H01L33/30

摘要： A semiconductor light emitting device includes a hetero-configuration having an active layer, a first clad layer, and a second clad layer, the active layer being interposed between the clad layers. The active layer emits light when charge carriers are injected. The first and second clad layers keep the injected charge carriers in the active layer. The hetero-configuration is interposed between a first and a second electrode. The semiconductor light emitting device further includes a dense defect-injected layer. This layer is provided between the first electrode and the hetero-configuration. The dense defect layer is made of a material having a concentration of crystal defects, a value of a lattice constant and a thickness which together help prevent at least some remotely generated crystal defects from reaching the layers of the hetero-configuration.

摘要翻译： 半导体发光器件包括具有有源层，第一覆盖层和第二覆盖层的异质结构，所述有源层插入在所述覆盖层之间。 当注入电荷载体时，有源层发光。 第一和第二包层将注入的电荷载体保持在有源层中。 异质结构介于第一和第二电极之间。 半导体发光器件还包括致密缺陷注入层。 该层设置在第一电极和异质构造之间。 致密缺陷层由具有晶体缺陷的浓度，晶格常数值和厚度的材料制成，这些材料一起有助于防止至少一些远程产生的晶体缺陷到达异构结构的层。

公开(公告)号：US5755877A

公开(公告)日：1998-05-26

申请号：US650021

申请日：1996-05-17

申请人： Takanobu Kamakura ,  Norihiko Tsuchiya

发明人： Takanobu Kamakura ,  Norihiko Tsuchiya

IPC分类号： G01N23/223 ,  C30B23/02 ,  H01L21/203 ,  H01L21/66 ,  C30B25/16

CPC分类号： C30B29/42 ,  C30B23/002 ,  C30B29/40 ,  Y10T117/1008

摘要： In an extremely thin hetero-epitaxial growth film less than 1 .mu.m, the thin film can be grown at high precision by controlling the growth conditions. The method of growing a thin film on a semiconductor substrate comprises the steps of: forming a semiconductor thin film on a surface of a semiconductor substrate; allowing X-rays to be incident upon the thin film now being grown; measuring fluorescent X-rays emitted from the thin film now being grown in accompany with the application of the X-rays; and controlling growth conditions of the thin film on the basis of the measured values.

摘要翻译： 在小于1μm的极薄的异质外延生长膜中，可以通过控制生长条件以高精度生长薄膜。 在半导体衬底上生长薄膜的方法包括以下步骤：在半导体衬底的表面上形成半导体薄膜; 允许X射线入射到正在生长的薄膜上; 测量随着X射线的应用而随着生长的薄膜发射的荧光X射线; 并根据测定值控制薄膜的生长条件。

公开(公告)号：US5389551A

公开(公告)日：1995-02-14

申请号：US24839

申请日：1993-03-01

申请人： Takanobu Kamakura ,  Youji Yamashita

发明人： Takanobu Kamakura ,  Youji Yamashita

IPC分类号： H01L21/322 ,  H01L21/306

CPC分类号： H01L21/3221 ,  Y10S148/06

摘要： A method of manufacturing a semiconductor substrate in which a damage layer is formed on one surface of a wafer. An etching protection film is formed on the damage layer. An epitaxial layer is formed on the other surface of the wafer. Thereafter, the etching protection film is removed to expose the damage layer. The exposed damage layer enhances gettering ability.

摘要翻译： 一种半导体衬底的制造方法，其中在晶片的一个表面上形成损伤层。 在损伤层上形成蚀刻保护膜。 在晶片的另一个表面上形成外延层。 此后，去除蚀刻保护膜以暴露损伤层。 暴露的损伤层增强吸气能力。

公开(公告)号：US08853711B2

公开(公告)日：2014-10-07

申请号：US13037937

申请日：2011-03-01

申请人： Akira Fujimoto ,  Koji Asakawa ,  Ryota Kitagawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Eishi Tsutsumi ,  Masaaki Ogawa

发明人： Akira Fujimoto ,  Koji Asakawa ,  Ryota Kitagawa ,  Takanobu Kamakura ,  Shinji Nunotani ,  Eishi Tsutsumi ,  Masaaki Ogawa

IPC分类号： H01L33/00 ,  H01L33/38 ,  B82Y20/00 ,  H01L33/42

CPC分类号： H01L33/38 ,  B82Y20/00 ,  H01L33/42 ,  H01L2933/0016

摘要： A semiconductor light emitting device includes a structural body, a first electrode layer, an intermediate layer and a second electrode layer. The structural body includes a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type, and a light emitting layer between the first and second semiconductor layers. The first electrode layer is on a side of the second semiconductor layer opposite to the first semiconductor layer; the first electrode layer includes a metal portion and plural opening portions piercing the metal portion along a direction from the first semiconductor layer toward the second semiconductor layer, having an equivalent circular diameter not less than 10 nanometers and not more than 5 micrometers. The intermediate layer is between the first and second semiconductor layers in ohmic contact with the second semiconductor layer. The second electrode layer is electrically connected to the first semiconductor layer.

摘要翻译： 半导体发光器件包括结构体，第一电极层，中间层和第二电极层。 结构体包括第一导电类型的第一半导体层，第二导电类型的第二半导体层以及第一和第二半导体层之间的发光层。 第一电极层位于与第一半导体层相对的第二半导体层的一侧上; 第一电极层包括金属部分和沿着从第一半导体层朝向第二半导体层的方向刺穿金属部分的多个开口部分，具有不小于10纳米且不大于5微米的等效圆直径。 中间层位于与第二半导体层欧姆接触的第一和第二半导体层之间。 第二电极层电连接到第一半导体层。

公开(公告)号：US08835954B2

公开(公告)日：2014-09-16

申请号：US13221326

申请日：2011-08-30

申请人： Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Kenji Nakamura ,  Tsutomu Nakanishi ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

发明人： Akira Fujimoto ,  Ryota Kitagawa ,  Kumi Masunaga ,  Kenji Nakamura ,  Tsutomu Nakanishi ,  Koji Asakawa ,  Takanobu Kamakura ,  Shinji Nunotani

IPC分类号： H01L33/60 ,  H01L33/40 ,  H01L33/38 ,  H01L33/00

CPC分类号： H01L33/405 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/40 ,  H01L2933/0016

摘要： According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.

摘要翻译： 根据一个实施例，半导体发光器件包括包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层的结构。 该器件还包括设置在该结构的第二半导体层侧上的电极层。 电极层包括厚度不小于10纳米且不大于100纳米的金属部分。 多个开口刺穿金属部分，每个开口具有不小于10纳米且不大于5微米的等效圆直径。 所述装置包括在所述金属部分和所述开口的内表面上提供的无机膜，所述无机膜相对于从所述发光层发射的光具有透射率。