公开(公告)号：US20100300168A1

公开(公告)日：2010-12-02

申请号：US12745156

申请日：2008-11-21

申请人： Ryohei Ishikura ,  Takashi Kano ,  Makio Kato ,  Yuji Kobayashi ,  Satoru Ujihashi ,  Kiyoshi Okumura

发明人： Ryohei Ishikura ,  Takashi Kano ,  Makio Kato ,  Yuji Kobayashi ,  Satoru Ujihashi ,  Kiyoshi Okumura

IPC分类号： C21D7/06 ,  B24C1/10

CPC分类号： B24C1/10 ,  B24C1/086 ,  C21D1/26 ,  C21D7/06 ,  C21D2211/001 ,  C21D2211/008 ,  Y10T29/479

摘要： The object of the present invention is to provide a method for shot peening by which a compressive residual stress that is higher than any achieved by the conventional method can be achieved while the thickness of the processed material that is scraped is suppressed. The method is characterized in that the shot materials are shot against the processed material that has the hardness of 750 HV or more that is calculated from equations (1) to (3) below. The shot materials have Vickers hardness that is higher than the hardness of the processed material by 50 HV to 250 HV. The thickness of the processed material that is to be scraped is suppressed to 5 μm or less. HV(m)={f(C)−f(T,t)}(1−γR/100)+400×γR/100  Equation (1) f(C)=−660C2+1373C+278  Equation (2) f(T,t)=0.05T(log t+17)−318  Equation (3) where C denotes the C (carbon) content in the surface layer that is achieved by carburizing (mass %), T denotes the tempering temperature (K), t denotes the tempering time (hr), and γR denotes the amount of residual austenite (vol. %).

摘要翻译： 本发明的目的是提供一种用于喷丸硬化的方法，通过该方法可以获得高于通过常规方法实现的压缩残余应力，同时抑制被刮除的被处理材料的厚度。 该方法的特征在于，针对由下述等式（1）至（3）计算的具有750HV或更高的硬度的处理材料进行喷丸处理。 喷丸材料的维氏硬度比加工材料的硬度高50HV至250HV。 要被刮削的被处理材料的厚度被抑制在5μm以下。 HV（m）= {f（C）-f（T，t）}（1-γR/ 100）+ 400×γR/ 100等式（1）f（C）= - 660C2 + 1373C + f（T，t）= 0.05T（log t + 17）-318等式（3）其中C表示通过渗碳实现的表面层中的C（碳）含量（质量％），T表示回火温度 K），t表示回火时间（hr），γR表示残留奥氏体量（体积％）。

公开(公告)号：US20100252913A1

公开(公告)日：2010-10-07

申请号：US12818694

申请日：2010-06-18

申请人： Nobuhiko Hayashi ,  Takashi Kano

发明人： Nobuhiko Hayashi ,  Takashi Kano

IPC分类号： H01L29/20

CPC分类号： H01S5/32341 ,  H01L21/31608 ,  H01L33/007 ,  H01S5/0216 ,  H01S5/0217 ,  H01S2304/12

摘要： A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

摘要翻译： 在蓝宝石衬底上生长GaN层，在GaN层上形成SiO 2膜，然后使用外延横向生长在GaN层和SiO 2膜上生长包括MQW有源层的GaN半导体层。 通过蚀刻除去在SiO 2膜上的区域中的GaN基半导体层，然后在SiO 2膜上的GaN基半导体层的顶表面上形成ap电极，以将p电极连接到GaN基半导体层 涉及GaAs衬底上的欧姆电极。 n电极形成在GaN基半导体层的顶表面上。

公开(公告)号：US20100139451A1

公开(公告)日：2010-06-10

申请号：US12630536

申请日：2009-12-03

申请人： Isamu SAITO ,  Yoshihiro Takitani ,  Shinichiro Kato ,  Makoto Hobo ,  Keiichiro Kamiya ,  Takahiro Miyazaki ,  Takashi Kano

发明人： Isamu SAITO ,  Yoshihiro Takitani ,  Shinichiro Kato ,  Makoto Hobo ,  Keiichiro Kamiya ,  Takahiro Miyazaki ,  Takashi Kano

IPC分类号： F16C3/06 ,  B21K1/08

CPC分类号： F16C3/06 ,  B21K1/08 ,  C23C8/32 ,  Y10T29/49286 ,  Y10T74/2173

摘要： The invention relates to a crankshaft member having high fatigue strength and good bending correctability, and its method of manufacture. The steel made crankshaft member mainly consists of a two-phase structure of ferrite and perlite. The steel includes C, Ni, Mn, and Cr as required elements and Si, Cu, Mo, Ti, V, Nb, Ca, and S as optional elements that may be included, in the amounts of C within the range of 0.20 to 0.50 wt %, Si within the range of 0 to 0.6 wt %, Mn within the range of 0.5 to 1.5 wt %, Cu within the range of 0 to 0.7 wt %, Ni within the range of 0.05 to 1.5 wt %, Cr within the range of 0.05 to 0.45 wt %, and Mo within the range of 0 to 0.5 wt % to satisfy the condition 115≧70 C+8 Si+23 Mn+11 Cu+128 Cr+83 Mo≧50. A portion of the member surface is provided at least with a hard nitride layer having an average hardness within the range of 300 to 450 HV. Lamellar spacing of the perlite is 0.3 μm or less.

摘要翻译： 本发明涉及具有高疲劳强度和良好的弯曲矫正性的曲轴件及其制造方法。 钢制曲轴构件主要由铁素体和珍珠岩的两相结构组成。 所述钢包含C，Ni，Mn和Cr作为要素，Si，Cu，Mo，Ti，V，Nb，Ca和S作为可以包含的任意元素，C的量在0.20〜 0.50重量％，Si在0〜0.6重量％的范围内，Mn在0.5〜1.5重量％的范围内，Cu在0〜0.7重量％的范围内，Ni在0.05〜1.5重量％的范围内，Cr在 0.05〜0.45重量％的范围，Mo在0〜0.5重量％的范围内，满足条件115≥70℃+ 8Si + 23 Mn + 11 Cu + 128 Cr + 83Mo≥50。 构件表面的一部分至少设置有平均硬度在300至450HV范围内的硬质氮化物层。 珍珠岩的层状间隔为0.3μm以下。

公开(公告)号：US20100025701A1

公开(公告)日：2010-02-04

申请号：US12576813

申请日：2009-10-09

申请人： Takashi KANO ,  Masayuki HATA ,  Yasuhiko NOMURA

发明人： Takashi KANO ,  Masayuki HATA ,  Yasuhiko NOMURA

IPC分类号： H01L33/00

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01L33/0075 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/0425 ,  H01S5/3063 ,  H01S2304/04 ,  H01S2304/12

摘要： A nitride-based semiconductor light-emitting device capable of suppressing reduction of characteristics and a yield and method of fabricating the same is described. The method of fabricating includes the steps of forming a groove portion on a nitride-based semiconductor substrate by selectively removing a prescribed region of a second region of the nitride-based semiconductor substrate other than a first region corresponding to a light-emitting portion of a nitride-based semiconductor layer up to a prescribed depth and forming the nitride-based semiconductor layer having a different composition from the nitride-based semiconductor substrate on the first region and the groove portion of the nitride-based semiconductor substrate.

摘要翻译： 描述了能够抑制特性降低和产量的氮化物半导体发光器件及其制造方法。 制造方法包括以下步骤：通过选择性地除去与氮化物基半导体衬底的发光部分相对应的第一区域以外的氮化物系半导体衬底的第二区域的规定区域，在氮化物系半导体衬底上形成沟槽部 氮化物基半导体层直到规定的深度，并且在氮化物基半导体衬底的第一区域和沟槽部分上形成具有与氮化物基半导体衬底不同的组成的氮化物基半导体层。

公开(公告)号：US07567605B2

公开(公告)日：2009-07-28

申请号：US11393891

申请日：2006-03-31

申请人： Tsutomu Yamaguchi ,  Masayuki Hata ,  Takashi Kano ,  Masayuki Shono ,  Hiroki Ohbo ,  Yasuhiko Nomura ,  Hiroaki Izu

发明人： Tsutomu Yamaguchi ,  Masayuki Hata ,  Takashi Kano ,  Masayuki Shono ,  Hiroki Ohbo ,  Yasuhiko Nomura ,  Hiroaki Izu

IPC分类号： H01S5/00

CPC分类号： H01S5/30 ,  H01L24/05 ,  H01L2224/04042 ,  H01L2224/48463 ,  H01L2224/73265 ,  H01L2924/00

摘要： A semiconductor laser device capable of reducing the threshold current and improving luminous efficiency and a method of fabricating the same are obtained. This semiconductor laser device comprises a semiconductor substrate having a principal surface and a semiconductor element layer, formed on the principal surface of the semiconductor substrate, having a principal surface substantially inclined with respect to the principal surface of the semiconductor substrate and including an emission layer.

摘要翻译： 获得能够降低阈值电流并提高发光效率的半导体激光器件及其制造方法。 该半导体激光器件包括具有主表面和半导体元件层的半导体衬底，该半导体衬底形成在半导体衬底的主表面上，其主表面相对于半导体衬底的主表面大致倾斜并且包括发射层。

公开(公告)号：US20090114941A1

公开(公告)日：2009-05-07

申请号：US12149960

申请日：2008-05-12

申请人： Nobuhiko Hayashi ,  Takashi Kano

发明人： Nobuhiko Hayashi ,  Takashi Kano

IPC分类号： H01L33/00 ,  H01L21/00 ,  H01L21/20 ,  H01L21/02

CPC分类号： H01S5/32341 ,  H01L21/31608 ,  H01L33/007 ,  H01S5/0216 ,  H01S5/0217 ,  H01S2304/12

摘要： A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

公开(公告)号：US20090010292A1

公开(公告)日：2009-01-08

申请号：US12213914

申请日：2008-06-26

申请人： Yasuhiko Nomura ,  Takashi Kano

发明人： Yasuhiko Nomura ,  Takashi Kano

IPC分类号： H01S5/34

CPC分类号： B82Y20/00 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/18

摘要： A nitride-based semiconductor laser device capable of elongating the life thereof is obtained. This nitride-based semiconductor laser device comprises a first cladding layer consisting of a first conductivity type nitride-based semiconductor, an emission layer, formed on the first cladding layer, consisting of a nitride-based semiconductor and a second cladding layer, formed on the emission layer, consisting of a second conductivity type nitride-based semiconductor, while the emission layer includes an active layer emitting light, a light guiding layer for confining light and a carrier blocking layer, arranged between the active layer and the light guiding layer, having a larger band gap than the light guiding layer.

摘要翻译： 获得能够延长寿命的氮化物系半导体激光装置。 该氮化物系半导体激光装置包括由第一导电型氮化物系半导体构成的第一包层，形成在第一包层上的由氮化物系半导体和第二包层构成的发光层， 发射层，由第二导电型氮化物基半导体组成，而发射层包括发射光的有源层，用于限制光的导光层和布置在有源层和导光层之间的载流子阻挡层，具有 比导光层更大的带隙。

公开(公告)号：US20070001269A1

公开(公告)日：2007-01-04

申请号：US11475955

申请日：2006-06-28

申请人： Takashi Kano ,  Kiyoshi Oota

发明人： Takashi Kano ,  Kiyoshi Oota

IPC分类号： H01L23/58

CPC分类号： H01L29/7371 ,  B82Y20/00 ,  H01L29/20 ,  H01L29/452 ,  H01L29/66318 ,  H01L33/02 ,  H01L33/32 ,  H01L33/40 ,  H01S5/0421 ,  H01S5/34333

摘要： A nitride semiconductor device includes a nitride semiconductor layer having a main surface, and an ohmic electrode formed on the main surface of the nitride semiconductor layer The ohmic electrode includes a silicon layer formed to contact with the main surface of the nitride semiconductor layer, and a first metal layer formed on the silicon layer.

摘要翻译： 氮化物半导体器件包括具有主表面的氮化物半导体层和形成在氮化物半导体层的主表面上的欧姆电极。欧姆电极包括形成为与氮化物半导体层的主表面接触的硅层，以及 第一金属层形成在硅层上。

公开(公告)号：US20050224835A1

公开(公告)日：2005-10-13

申请号：US11147334

申请日：2005-06-08

申请人： Yasuhiko Nomura ,  Takashi Kano

发明人： Yasuhiko Nomura ,  Takashi Kano

IPC分类号： H01S5/20 ,  H01S5/343 ,  H01L33/00

CPC分类号： B82Y20/00 ,  H01S5/2009 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2301/18

摘要： A nitride-based semiconductor laser device capable of elongating the life thereof is obtained. This nitride-based semiconductor laser device comprises a first cladding layer consisting of a first conductivity type nitride-based semiconductor, an emission layer, formed on the first cladding layer, consisting of a nitride-based semiconductor and a second cladding layer, formed on the emission layer, consisting of a second conductivity type nitride-based semiconductor, while the emission layer includes an active layer emitting light, a light guiding layer for confining light and a carrier blocking layer, arranged between the active layer and the light guiding layer, having a larger band gap than the light guiding layer.

公开(公告)号：US20050145878A1

公开(公告)日：2005-07-07

申请号：US11054956

申请日：2005-02-11

申请人： Nobuhiko Hayashi ,  Takashi Kano

发明人： Nobuhiko Hayashi ,  Takashi Kano

IPC分类号： H01L21/316 ,  H01L33/00 ,  H01S5/02 ,  H01S5/323 ,  H01L29/22

CPC分类号： H01S5/32341 ,  H01L21/31608 ,  H01L33/007 ,  H01S5/0216 ,  H01S5/0217 ,  H01S2304/12

摘要： A GaN layer is grown on a sapphire substrate, an SiO2 film is formed on the GaN layer, and a GaN semiconductor layer including an MQW active layer is then grown on the GaN layer and the SiO2 film using epitaxial lateral overgrowth. The GaN based semiconductor layer is removed by etching except in a region on the SiO2 film, and a p electrode is then formed on the top surface of the GaN based semiconductor layer on the SiO2 film, to join the p electrode on the GaN based semiconductor layer to an ohmic electrode on a GaAs substrate. An n electrode is formed on the top surface of the GaN based semiconductor layer.

摘要翻译： 在蓝宝石衬底上生长GaN层，在GaN层上形成SiO 2膜，然后在GaN层上生长包括MQW有源层的GaN半导体层，并且将SiO _{2 膜使用外延横向过度生长。 通过蚀刻除去GaN基半导体层，除了在SiO 2膜上的区域中，然后在SiO 2膜上的GaN基半导体层的顶表面上形成ap电极， / SUB>膜，将GaN基半导体层上的p电极连接到GaAs衬底上的欧姆电极。 n电极形成在GaN基半导体层的顶表面上。}