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    Collector for bipolar lithium ion secondary batteries
    1.
    发明授权
    Collector for bipolar lithium ion secondary batteries 有权
    双极型锂离子二次电池收集器

    公开(公告)号：US09537152B2

    公开(公告)日：2017-01-03

    申请号：US14233980

    申请日：2012-07-18

    申请人： Yasuyuki Tanaka ,  Masami Yanagida ,  Kohei Ogawa ,  Satoshi Oku ,  Masahiro Kojima ,  Takashi Kikuchi ,  Takashi Ito

    发明人： Yasuyuki Tanaka ,  Masami Yanagida ,  Kohei Ogawa ,  Satoshi Oku ,  Masahiro Kojima ,  Takashi Kikuchi ,  Takashi Ito

    IPC分类号： H01M4/66 ,  H01M10/0525

    CPC分类号： H01M4/667 ,  H01M4/666 ,  H01M4/668 ,  H01M10/0525 ,  Y02E60/122 ,  Y02T10/7011

    摘要： A collector for bipolar lithium ion secondary batteries comprises a first conductive layer that is obtained by adding a conductive filler to a base that contains an imide group-containing resin, and a second conductive layer that has a function of blocking lithium ions. The second conductive layer comprises a blocking resin layer that is obtained by adding a conductive filler to a base that contains a resin which contains no imide group, and a metal layer. This collector for bipolar lithium ion secondary batteries is used in such a manner that the first conductive layer is on the positive electrode active material layer side with respect to the second conductive layer.

    摘要翻译： 双极性锂离子二次电池的集电体包括通过在含有含酰亚胺基的树脂的基体中添加导电性填料而获得的第一导电层和具有阻断锂离子功能的第二导电层。 第二导电层包括通过将导电填料添加到含有不含酰亚胺基的树脂的基体和金属层而获得的阻挡树脂层。 双极性锂离子二次电池用集电体的使用方式是使第一导电层相对于第二导电层位于正极活性物质层一侧。

    Generator motor
    2.
    发明授权
    Generator motor 有权
    发电机电机

    公开(公告)号：US08569919B2

    公开(公告)日：2013-10-29

    申请号：US13809143

    申请日：2012-03-26

    申请人： Yukihiko Sugimoto ,  Teiichirou Chiba ,  Takashi Kikuchi

    发明人： Yukihiko Sugimoto ,  Teiichirou Chiba ,  Takashi Kikuchi

    IPC分类号： H02K5/04 ,  H02K5/16

    CPC分类号： H02K5/04 ,  H02K5/15 ,  H02K15/0006

    摘要： A generator motor includes a flange, stationary-side members, rotor-side members, and latching members. The flange is removably mounted on a first end side in an axial direction. The stationary-side members are fixed on a second end side that is on an opposite side from the first end side in the axial direction. The rotor-side members are configured to move toward the first end side in the axial direction with respect to the stationary-side members in a state in which the flange has been removed. The latching members are configured to restrict relative movement of the flange in the axial direction with respect to the rotor-side members.

    摘要翻译： 发电机电动机包括凸缘，固定侧构件，转子侧构件和闩锁构件。 凸缘可沿轴向可拆卸地安装在第一端侧。 固定侧构件固定在与轴向的第一端侧相反一侧的第二端侧。 转子侧部件被构造成在已经去除了凸缘的状态下相对于固定侧部件沿着轴向的第一端侧移动。 闩锁构件被构造成限制凸缘相对于转子侧构件在轴向方向上的相对运动。

    Reinforcing element structure
    5.
    发明授权
    Reinforcing element structure 有权
    加强元件结构

    公开(公告)号：US08226156B2

    公开(公告)日：2012-07-24

    申请号：US12730558

    申请日：2010-03-24

    申请人： Masamitsu Shiono ,  Kazuhiro Onda ,  Hitoshi Kato ,  Takashi Kikuchi

    发明人： Masamitsu Shiono ,  Kazuhiro Onda ,  Hitoshi Kato ,  Takashi Kikuchi

    IPC分类号： B60J7/00

    CPC分类号： B62D25/20 ,  B60N2/4235 ,  B60N2/793

    摘要： A reinforcing element structure placed between left and right seats. A reinforcing element comprises a pair of left and right side walls positioned so as to be disposed opposite from interior faces of a pair of left and right seats, and a reinforcing member for coupling the pair of left and right side walls. The pair of left and right side walls and the reinforcing member are jointly fastened to a tunnel section. A load that acts on the reinforcing element is transferred from one of the side walls to the other side wall via the reinforcing member. The load is withstood by a highly rigid reinforcing element constituted by the left and right side walls and the reinforcing member.

    摘要翻译： 位于左右座椅之间的加固元件结构。 加强元件包括一对左右侧壁，其被定位成与一对左右座椅的内表面相对设置，以及用于联接该一对左右侧壁的加强构件。 一对左右侧壁和加强构件共同紧固到隧道部。 作用在增强元件上的负载经由加强构件从一个侧壁转移到另一侧壁。 负载由左右侧壁和加强构件构成的高刚性加强元件承受。

    Nonvolatile memory utilizing MIS memory transistors with function to correct data reversal
    7.
    发明授权
    Nonvolatile memory utilizing MIS memory transistors with function to correct data reversal 有权
    使用MIS存储晶体管的非易失性存储器具有校正数据反转的功能

    公开(公告)号：US07639546B2

    公开(公告)日：2009-12-29

    申请号：US12037414

    申请日：2008-02-26

    申请人： Takashi Kikuchi ,  Kenji Noda

    发明人： Takashi Kikuchi ,  Kenji Noda

    IPC分类号： G11C7/00

    CPC分类号： G11C7/1045 ,  G11C7/1006 ,  G11C7/12 ,  G11C14/00 ,  G11C14/0063

    摘要： A nonvolatile semiconductor memory device includes a latch circuit having two nodes, a nonvolatile memory cell including two MIS transistors, a bit swapping unit configured to provide straight connections between the two nodes and the two MIS transistors during a first operation mode and to provide cross connections between the two nodes and the two MIS transistors during a second operation mode, and a control circuit configured to cause, in one of the first and second operation modes, the nonvolatile memory cell to store the data latched in the latch circuit as an irreversible change of transistor characteristics occurring in a selected one of the two MIS transistors, and further configured to cause, in another one of the first and second operation modes, the latch circuit to detect the data stored in the nonvolatile memory cell.

    摘要翻译： 非易失性半导体存储器件包括具有两个节点的锁存电路，包括两个MIS晶体管的非易失性存储器单元，配置成在第一操作模式期间在两个节点和两个MIS晶体管之间提供直连接并提供交叉连接 在第二操作模式期间在两个节点和两个MIS晶体管之间，以及控制电路，被配置为在第一和第二操作模式之一中使得非易失性存储单元将锁存在锁存电路中的数据存储为不可逆变化 的晶体管特性出现在所述两个MIS晶体管中的所选择的一个中，并且还被配置为在所述第一和第二操作模式中的另一个中引起所述锁存电路来检测存储在所述非易失性存储单元中的数据。

    Nonvolatile memory utilizing MIS memory transistors capable of multiple store operations
    8.
    发明授权
    Nonvolatile memory utilizing MIS memory transistors capable of multiple store operations 有权
    使用能够进行多个存储操作的MIS存储器晶体管的非易失性存储器

    公开(公告)号：US07518917B2

    公开(公告)日：2009-04-14

    申请号：US11775951

    申请日：2007-07-11

    申请人： Kenji Noda ,  Takashi Kikuchi

    发明人： Kenji Noda ,  Takashi Kikuchi

    IPC分类号： G11C11/34

    CPC分类号： G11C14/00 ,  G11C11/412

    摘要： A nonvolatile semiconductor memory device includes a latch configured to store data, a plurality of word lines, a driver configured to activate one of the plurality of word lines, and a plurality of nonvolatile memory cells coupled to the respective word lines, each of the nonvolatile memory cells coupled to the latch so as to exchange stored data with the latch upon activation of a corresponding one of the word lines, each of the nonvolatile memory cells including two MIS transistors and configured to store data as an irreversible change of transistor characteristics occurring in one of the two MIS transistors, wherein the driver includes at least one nonvolatile memory cell storing count data responsive to a number of times storing of data has been performed with respect to the plurality of nonvolatile memory cells, and is configured to activate one of the word lines indicated by the count data.

    摘要翻译： 非易失性半导体存储器件包括：锁存器，被配置为存储数据，多个字线，被配置为激活多个字线中的一个字线的驱动器;以及耦合到各个字线的多个非易失性存储器单元，每个非易失性存储器件 存储器单元耦合到所述锁存器，以便在激活相应的一条字线时与所述锁存器交换存储的数据，所述非易失性存储器单元中的每一个包括两个MIS晶体管，并且被配置为将数据存储为晶体管特性的不可逆变化， 两个MIS晶体管中的一个，其中驱动器包括至少一个非易失性存储单元，其存储响应于多次数据存储的数量的计数数据，并且被配置为激活多个非易失性存储单元中的一个， 字数由计数数据表示。

    Polyimide Film
    9.
    发明申请
    Polyimide Film 审中-公开
    聚酰亚胺膜

    公开(公告)号：US20090069531A1

    公开(公告)日：2009-03-12

    申请号：US11918181

    申请日：2006-04-12

    申请人： Hisayasu Kaneshiro ,  Takashi Kikuchi ,  Takaaki Matsuwaki

    发明人： Hisayasu Kaneshiro ,  Takashi Kikuchi ,  Takaaki Matsuwaki

    IPC分类号： C08G73/10

    CPC分类号： H05K1/0346 ,  C08G73/1042 ,  C08G73/1046 ,  C08G73/105 ,  C08G73/1067 ,  C08G73/1071 ,  C08J5/18 ,  C08J2379/08 ,  C08L79/08 ,  H05K1/0393 ,  H05K2201/0154

    摘要： A polyimide film which, when used in FPC production, is reduced in dimensional change during the production steps. In particular, a metal-clad laminate apt to have abnormal parts such as rumples is produced from the film, and an FPC reduced in dimensional change is obtained in high yield. The polyimide film has a tan δ peak temperature within a range of 320° C. or more and lower than 380° C. in measuring a dynamic viscoelasticity, and is characterized by having a maximum sag of 13 mm or less.

    摘要翻译： 当在FPC制造中使用时，在制造工序中尺寸变化减小的聚酰亚胺膜。 特别是，由薄膜制成易于具有诸如凸起等异常部分的覆金属层压板，以高收率获得尺寸变化减小的FPC。 在测量动态粘弹性时，聚酰亚胺膜的tanδ峰值温度在320℃以上且低于380℃的范围内，其特征在于具有13mm以下的最大凹陷。

    MIS-TRANSISTOR-BASED NONVOLATILE MEMORY DEVICE WITH VERIFY FUNCTION
    10.
    发明申请
    MIS-TRANSISTOR-BASED NONVOLATILE MEMORY DEVICE WITH VERIFY FUNCTION 有权
    具有验证功能的基于MIS-TRANSISTOR的非易失性存储器件

    公开(公告)号：US20090052229A1

    公开(公告)日：2009-02-26

    申请号：US11841265

    申请日：2007-08-20

    申请人： Takashi KIKUCHI

    发明人： Takashi KIKUCHI

    IPC分类号： G11C11/00

    CPC分类号： G11C11/412 ,  G11C11/413

    摘要： A nonvolatile semiconductor memory device includes a first latch to store data, a nonvolatile memory cell including two MIS transistors to store data as an irreversible change of transistor characteristics occurring in one of the two MIS transistors selected in response to the data stored in the first latch, a second latch to store data obtained by sensing a difference in the transistor characteristics between the two MIS transistors, a logic circuit to produce a signal indicative of comparison between the data of the first latch and the data of the second latch, and a control circuit configured to repeat a store operation storing data in the nonvolatile memory cell, a recall operation storing data in the second latch, and a verify operation producing the signal indicative of comparison until the signal indicates that the data of the first latch and the data of the second latch are the same.

    摘要翻译： 非易失性半导体存储器件包括用于存储数据的第一锁存器，包括两个MIS晶体管的非易失性存储器单元，用于将数据存储为在响应于存储在第一锁存器中的数据选择的两个MIS晶体管之一中出现的晶体管特性的不可逆变化 用于存储通过感测两个MIS晶体管之间的晶体管特性的差异获得的数据的第二锁存器，产生指示第一锁存器的数据与第二锁存器的数据之间的比较的信号的逻辑电路，以及控制 电路，被配置为重复存储在非易失性存储单元中的数据的存储操作，存储第二锁存器中的数据的调用操作，以及产生指示比较的信号的校验操作，直到信号指示第一锁存器的数据和 第二个锁存器是相同的。