公开(公告)号：US09537152B2

公开(公告)日：2017-01-03

申请号：US14233980

申请日：2012-07-18

Applicant: Yasuyuki Tanaka ,  Masami Yanagida ,  Kohei Ogawa ,  Satoshi Oku ,  Masahiro Kojima ,  Takashi Kikuchi ,  Takashi Ito

Inventor： Yasuyuki Tanaka ,  Masami Yanagida ,  Kohei Ogawa ,  Satoshi Oku ,  Masahiro Kojima ,  Takashi Kikuchi ,  Takashi Ito

IPC: H01M4/66 ,  H01M10/0525

CPC classification number: H01M4/667 ,  H01M4/666 ,  H01M4/668 ,  H01M10/0525 ,  Y02E60/122 ,  Y02T10/7011

Abstract: A collector for bipolar lithium ion secondary batteries comprises a first conductive layer that is obtained by adding a conductive filler to a base that contains an imide group-containing resin, and a second conductive layer that has a function of blocking lithium ions. The second conductive layer comprises a blocking resin layer that is obtained by adding a conductive filler to a base that contains a resin which contains no imide group, and a metal layer. This collector for bipolar lithium ion secondary batteries is used in such a manner that the first conductive layer is on the positive electrode active material layer side with respect to the second conductive layer.

Abstract translation: 双极性锂离子二次电池的集电体包括通过在含有含酰亚胺基的树脂的基体中添加导电性填料而获得的第一导电层和具有阻断锂离子功能的第二导电层。 第二导电层包括通过将导电填料添加到含有不含酰亚胺基的树脂的基体和金属层而获得的阻挡树脂层。 双极性锂离子二次电池用集电体的使用方式是使第一导电层相对于第二导电层位于正极活性物质层一侧。

公开(公告)号：US08569919B2

公开(公告)日：2013-10-29

申请号：US13809143

申请日：2012-03-26

Applicant: Yukihiko Sugimoto ,  Teiichirou Chiba ,  Takashi Kikuchi

Inventor： Yukihiko Sugimoto ,  Teiichirou Chiba ,  Takashi Kikuchi

IPC: H02K5/04 ,  H02K5/16

CPC classification number: H02K5/04 ,  H02K5/15 ,  H02K15/0006

Abstract: A generator motor includes a flange, stationary-side members, rotor-side members, and latching members. The flange is removably mounted on a first end side in an axial direction. The stationary-side members are fixed on a second end side that is on an opposite side from the first end side in the axial direction. The rotor-side members are configured to move toward the first end side in the axial direction with respect to the stationary-side members in a state in which the flange has been removed. The latching members are configured to restrict relative movement of the flange in the axial direction with respect to the rotor-side members.

Abstract translation: 发电机电动机包括凸缘，固定侧构件，转子侧构件和闩锁构件。 凸缘可沿轴向可拆卸地安装在第一端侧。 固定侧构件固定在与轴向的第一端侧相反一侧的第二端侧。 转子侧部件被构造成在已经去除了凸缘的状态下相对于固定侧部件沿着轴向的第一端侧移动。 闩锁构件被构造成限制凸缘相对于转子侧构件在轴向方向上的相对运动。

公开(公告)号：US08435641B2

公开(公告)日：2013-05-07

申请号：US10532766

申请日：2003-10-09

Applicant: Takashi Kikuchi ,  Naoki Hase ,  Hiroyuki Tsuji ,  Yasuo Fushiki

Inventor： Takashi Kikuchi ,  Naoki Hase ,  Hiroyuki Tsuji ,  Yasuo Fushiki

IPC: B32B27/06 ,  B32B27/36

CPC classification number: B32B15/08 ,  B32B7/12 ,  B32B15/20 ,  B32B37/0007 ,  B32B37/26 ,  B32B2307/306 ,  B32B2307/734 ,  B32B2309/105 ,  B32B2311/00 ,  B32B2311/12 ,  B32B2379/08 ,  B32B2457/08 ,  H05K1/0393 ,  H05K3/022 ,  H05K3/386 ,  H05K2201/0154 ,  H05K2201/0355 ,  H05K2201/068 ,  H05K2203/068 ,  Y10T156/10 ,  Y10T428/31678 ,  Y10T428/31721

Abstract: A method for manufacturing a heat resistant flexible laminate effectively enabling avoidance of not only visual defects but occurrence of dimensional changes, and a heat resistant flexible laminate are provided. In a process for laminating a heat resistant adhesive material and a metallic foil by thermal lamination, a film-like protective material is disposed between a pressurized surface and the metallic foil at the time of thermal lamination. At this time, coefficients of linear expansion in a temperature range of 200 degree C. to 300 degree C. of the heat resistant adhesive material and the protective material are within a range of a coefficient of linear expansion of the metallic foil ±10 ppm/degrees C. Thereby, occurrence of visual defects is not only effectively avoidable, but excellent dimensional change after etching may be exhibited.

Abstract translation: 提供了一种制造耐热柔性层压材料的方法，其有效地避免了不仅视觉缺陷，而且避免了尺寸变化的发生，而且提供了耐热柔性层压材料。 在通过热层压层压耐热粘合剂材料和金属箔的方法中，在热层压时，膜状保护材料设置在加压表面和金属箔之间。 此时，耐热粘合剂材料和保护材料的200℃〜300℃的温度范围内的线膨胀系数在金属箔的线膨胀系数±10ppm / 因此，视觉缺陷的发生不仅可以有效地避免，而且可以显示蚀刻后的优异的尺寸变化。

公开(公告)号：US08398116B2

公开(公告)日：2013-03-19

申请号：US13003952

申请日：2009-07-16

Applicant: Kazuhiro Onda ,  Nobuhiro Kawamoto ,  Itaru Genpei ,  Makoto Uchikawa ,  Takashi Kikuchi ,  Yukio Hiruta ,  Yuichi Saito

Inventor： Kazuhiro Onda ,  Nobuhiro Kawamoto ,  Itaru Genpei ,  Makoto Uchikawa ,  Takashi Kikuchi ,  Yukio Hiruta ,  Yuichi Saito

IPC: B60R21/16

CPC classification number: B60R21/23138 ,  B60R21/2338 ,  B60R21/239 ,  B60R2021/23146 ,  B60R2021/23382 ,  Y10T29/49826

Abstract: An airbag for a vehicle, the airbag formed as a bag body by sewing together a base cloth, wherein the bag body is configured so that a direction in which the bag body unfolds expands from a base end side of the bag body to a tip end side, and, the bag body includes a tensional force providing mechanism generating a tensional force pulling an upper rim of the bag body toward an outer side by forming a tension line extending so as to cross with the direction in which the bag body unfolds, along a side surface of the bag body.

Abstract translation: 一种用于车辆的安全气囊，所述气囊通过将基布缝合在一起而形成为袋体，其中所述袋体构造成使得所述袋体展开的方向从所述袋体的基端侧扩展到所述顶端 并且袋体包括拉伸力提供机构，通过形成沿着袋体展开方向交叉延伸的张力线，从而产生张力，从而将袋体的上边缘向外侧拉动 袋体的侧面。

公开(公告)号：US08226156B2

公开(公告)日：2012-07-24

申请号：US12730558

申请日：2010-03-24

Applicant: Masamitsu Shiono ,  Kazuhiro Onda ,  Hitoshi Kato ,  Takashi Kikuchi

Inventor： Masamitsu Shiono ,  Kazuhiro Onda ,  Hitoshi Kato ,  Takashi Kikuchi

IPC: B60J7/00

CPC classification number: B62D25/20 ,  B60N2/4235 ,  B60N2/793

Abstract: A reinforcing element structure placed between left and right seats. A reinforcing element comprises a pair of left and right side walls positioned so as to be disposed opposite from interior faces of a pair of left and right seats, and a reinforcing member for coupling the pair of left and right side walls. The pair of left and right side walls and the reinforcing member are jointly fastened to a tunnel section. A load that acts on the reinforcing element is transferred from one of the side walls to the other side wall via the reinforcing member. The load is withstood by a highly rigid reinforcing element constituted by the left and right side walls and the reinforcing member.

Abstract translation: 位于左右座椅之间的加固元件结构。 加强元件包括一对左右侧壁，其被定位成与一对左右座椅的内表面相对设置，以及用于联接该一对左右侧壁的加强构件。 一对左右侧壁和加强构件共同紧固到隧道部。 作用在增强元件上的负载经由加强构件从一个侧壁转移到另一侧壁。 负载由左右侧壁和加强构件构成的高刚性加强元件承受。

公开(公告)号：US07804176B2

公开(公告)日：2010-09-28

申请号：US11626286

申请日：2007-01-23

Applicant: Kazuko Hanawa ,  Takashi Kikuchi ,  Koichi Kanemoto ,  Michiaki Sugiyama ,  Chikako Imura

Inventor： Kazuko Hanawa ,  Takashi Kikuchi ,  Koichi Kanemoto ,  Michiaki Sugiyama ,  Chikako Imura

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L25/18 ,  G11C5/06 ,  H01L24/45 ,  H01L24/73 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48147 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/06586 ,  H01L2924/01014 ,  H01L2924/01037 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: This invention is to provide a nonvolatile memory device that enhances a size reduction and mass productivity while ensuring reliability and signal transmission performance. A nonvolatile memory chip having a first side formed with no pads and a second side formed with pads is mounted on a mounting substrate. A control chip for controlling the nonvolatile memory chip is mounted on the nonvolatile memory chip. The control chip has a first pad row corresponding to the pads of the nonvolatile memory chip. The first pad row is mounted adjacent to the first side of the nonvolatile memory chip. The first pad row of the control chip and a first electrode row formed on the mounting substrate are connected via a first wire group. The pads of the nonvolatile memory chip and a second electrode row formed on the mounting substrate are connected via a second wire group. The first electrode row and the second electrode row are connected through wirings formed in the mounting substrate.

Abstract translation: 本发明是提供一种在确保可靠性和信号传输性能的同时提高尺寸减小和批量生产率的非易失性存储装置。 具有形成有焊盘的第一侧和形成有焊盘的第二侧的非易失性存储器芯片安装在安装基板上。 用于控制非易失存储器芯片的控制芯片安装在非易失性存储器芯片上。 控制芯片具有对应于非易失性存储器芯片的焊盘的第一焊盘行。 第一焊盘排安装在非易失性存储芯片的第一侧附近。 控制芯片的第一焊盘排和形成在安装基板上的第一电极列经由第一焊丝组连接。 形成在安装基板上的非易失性存储芯片的焊盘和第二电极列经由第二引线组连接。 第一电极列和第二电极列通过形成在安装基板中的布线连接。

公开(公告)号：US07639546B2

公开(公告)日：2009-12-29

申请号：US12037414

申请日：2008-02-26

Applicant: Takashi Kikuchi ,  Kenji Noda

Inventor： Takashi Kikuchi ,  Kenji Noda

IPC: G11C7/00

CPC classification number: G11C7/1045 ,  G11C7/1006 ,  G11C7/12 ,  G11C14/00 ,  G11C14/0063

Abstract: A nonvolatile semiconductor memory device includes a latch circuit having two nodes, a nonvolatile memory cell including two MIS transistors, a bit swapping unit configured to provide straight connections between the two nodes and the two MIS transistors during a first operation mode and to provide cross connections between the two nodes and the two MIS transistors during a second operation mode, and a control circuit configured to cause, in one of the first and second operation modes, the nonvolatile memory cell to store the data latched in the latch circuit as an irreversible change of transistor characteristics occurring in a selected one of the two MIS transistors, and further configured to cause, in another one of the first and second operation modes, the latch circuit to detect the data stored in the nonvolatile memory cell.

Abstract translation: 非易失性半导体存储器件包括具有两个节点的锁存电路，包括两个MIS晶体管的非易失性存储器单元，配置成在第一操作模式期间在两个节点和两个MIS晶体管之间提供直连接并提供交叉连接 在第二操作模式期间在两个节点和两个MIS晶体管之间，以及控制电路，被配置为在第一和第二操作模式之一中使得非易失性存储单元将锁存在锁存电路中的数据存储为不可逆变化 的晶体管特性出现在所述两个MIS晶体管中的所选择的一个中，并且还被配置为在所述第一和第二操作模式中的另一个中引起所述锁存电路来检测存储在所述非易失性存储单元中的数据。

公开(公告)号：US07518917B2

公开(公告)日：2009-04-14

申请号：US11775951

申请日：2007-07-11

Applicant: Kenji Noda ,  Takashi Kikuchi

Inventor： Kenji Noda ,  Takashi Kikuchi

IPC: G11C11/34

CPC classification number: G11C14/00 ,  G11C11/412

Abstract: A nonvolatile semiconductor memory device includes a latch configured to store data, a plurality of word lines, a driver configured to activate one of the plurality of word lines, and a plurality of nonvolatile memory cells coupled to the respective word lines, each of the nonvolatile memory cells coupled to the latch so as to exchange stored data with the latch upon activation of a corresponding one of the word lines, each of the nonvolatile memory cells including two MIS transistors and configured to store data as an irreversible change of transistor characteristics occurring in one of the two MIS transistors, wherein the driver includes at least one nonvolatile memory cell storing count data responsive to a number of times storing of data has been performed with respect to the plurality of nonvolatile memory cells, and is configured to activate one of the word lines indicated by the count data.

Abstract translation: 非易失性半导体存储器件包括：锁存器，被配置为存储数据，多个字线，被配置为激活多个字线中的一个字线的驱动器;以及耦合到各个字线的多个非易失性存储器单元，每个非易失性存储器件 存储器单元耦合到所述锁存器，以便在激活相应的一条字线时与所述锁存器交换存储的数据，所述非易失性存储器单元中的每一个包括两个MIS晶体管，并且被配置为将数据存储为晶体管特性的不可逆变化， 两个MIS晶体管中的一个，其中驱动器包括至少一个非易失性存储单元，其存储响应于多次数据存储的数量的计数数据，并且被配置为激活多个非易失性存储单元中的一个， 字数由计数数据表示。

公开(公告)号：US20090069531A1

公开(公告)日：2009-03-12

申请号：US11918181

申请日：2006-04-12

Applicant: Hisayasu Kaneshiro ,  Takashi Kikuchi ,  Takaaki Matsuwaki

Inventor： Hisayasu Kaneshiro ,  Takashi Kikuchi ,  Takaaki Matsuwaki

IPC: C08G73/10

CPC classification number: H05K1/0346 ,  C08G73/1042 ,  C08G73/1046 ,  C08G73/105 ,  C08G73/1067 ,  C08G73/1071 ,  C08J5/18 ,  C08J2379/08 ,  C08L79/08 ,  H05K1/0393 ,  H05K2201/0154

Abstract: A polyimide film which, when used in FPC production, is reduced in dimensional change during the production steps. In particular, a metal-clad laminate apt to have abnormal parts such as rumples is produced from the film, and an FPC reduced in dimensional change is obtained in high yield. The polyimide film has a tan δ peak temperature within a range of 320° C. or more and lower than 380° C. in measuring a dynamic viscoelasticity, and is characterized by having a maximum sag of 13 mm or less.

Abstract translation: 当在FPC制造中使用时，在制造工序中尺寸变化减小的聚酰亚胺膜。 特别是，由薄膜制成易于具有诸如凸起等异常部分的覆金属层压板，以高收率获得尺寸变化减小的FPC。 在测量动态粘弹性时，聚酰亚胺膜的tanδ峰值温度在320℃以上且低于380℃的范围内，其特征在于具有13mm以下的最大凹陷。

公开(公告)号：US20090052229A1

公开(公告)日：2009-02-26

申请号：US11841265

申请日：2007-08-20

Applicant: Takashi KIKUCHI

Inventor： Takashi KIKUCHI

IPC: G11C11/00

CPC classification number: G11C11/412 ,  G11C11/413

Abstract: A nonvolatile semiconductor memory device includes a first latch to store data, a nonvolatile memory cell including two MIS transistors to store data as an irreversible change of transistor characteristics occurring in one of the two MIS transistors selected in response to the data stored in the first latch, a second latch to store data obtained by sensing a difference in the transistor characteristics between the two MIS transistors, a logic circuit to produce a signal indicative of comparison between the data of the first latch and the data of the second latch, and a control circuit configured to repeat a store operation storing data in the nonvolatile memory cell, a recall operation storing data in the second latch, and a verify operation producing the signal indicative of comparison until the signal indicates that the data of the first latch and the data of the second latch are the same.

Abstract translation: 非易失性半导体存储器件包括用于存储数据的第一锁存器，包括两个MIS晶体管的非易失性存储器单元，用于将数据存储为在响应于存储在第一锁存器中的数据选择的两个MIS晶体管之一中出现的晶体管特性的不可逆变化 用于存储通过感测两个MIS晶体管之间的晶体管特性的差异获得的数据的第二锁存器，产生指示第一锁存器的数据与第二锁存器的数据之间的比较的信号的逻辑电路，以及控制 电路，被配置为重复存储在非易失性存储单元中的数据的存储操作，存储第二锁存器中的数据的调用操作，以及产生指示比较的信号的校验操作，直到信号指示第一锁存器的数据和 第二个锁存器是相同的。