公开(公告)号：US5605860A

公开(公告)日：1997-02-25

申请号：US374207

申请日：1995-01-18

申请人： Tetuo Kawasaki ,  Tetuhiro Koretika ,  Makoto Kitabatake ,  Takasi Hirao

发明人： Tetuo Kawasaki ,  Tetuhiro Koretika ,  Makoto Kitabatake ,  Takasi Hirao

IPC分类号： H01L21/20 ,  H01L43/06 ,  H01L43/08

CPC分类号： H01L43/08 ,  H01L21/02381 ,  H01L21/02466 ,  H01L21/02502 ,  H01L21/02549 ,  H01L21/02631 ,  H01L43/065 ,  Y10S438/974

摘要： A method of fabricating a semiconductor thin film is initiated with preparing a substrate having a surface consisting of a single crystal of Si. The surface has an oxide film. Then, the oxide film is removed. The dangling bonds of the Si atoms on the surface are terminated with hydrogen atoms. An initial layer is formed on the substrate of the single crystal of Si terminated with the hydrogen atoms, of at least one selected from the group consisting of Al, Ga, and In. A buffer layer containing at least In and Sb is formed on the initial layer. A semiconductor thin film containing at least In and Sb is formed on the buffer layer at a temperature higher than the temperature at which the buffer layer is started to be formed. There is also disclosed a method of fabricating a Hall-effect device. This method is initiated with forming a semiconductor thin film by making use of the above-described fabrication method. Then, electrodes are attached to the thin film.

摘要翻译： 通过制备具有由Si的单晶组成的表面的衬底来开始制造半导体薄膜的方法。 该表面具有氧化膜。 然后，除去氧化膜。 表面上的Si原子的悬挂键用氢原子终止。 在由Al，Ga和In组成的组中选出的至少一种的氢原子的单结晶的基板上形成初始层。 在初始层上形成至少含有In和Sb的缓冲层。 至少含有In和Sb的半导体薄膜在高于开始形成缓冲层的温度的温度下形成在缓冲层上。 还公开了一种制造霍尔效应器件的方法。 通过利用上述制造方法形成半导体薄膜来开始该方法。 然后，电极附着在薄膜上。

公开(公告)号：US5385864A

公开(公告)日：1995-01-31

申请号：US247655

申请日：1994-05-23

申请人： Tetuo Kawasaki ,  Tetuhiro Koretika ,  Kitabatake ,  Takasi Hirao

发明人： Tetuo Kawasaki ,  Tetuhiro Koretika ,  Kitabatake ,  Takasi Hirao

IPC分类号： H01L21/20 ,  H01L43/06 ,  H01L43/08

CPC分类号： H01L43/08 ,  H01L21/02381 ,  H01L21/02466 ,  H01L21/02502 ,  H01L21/02549 ,  H01L21/02631 ,  H01L43/065 ,  Y10S438/974

摘要： A method of fabricating a semiconductor thin film is initiated with preparing a substrate having a surface consisting of a single crystal of Si. The surface has an oxide film. Then, the oxide film is removed. The dangling bonds of the Si atoms on the surface are terminated with hydrogen atoms. An initial layer is formed on the substrate of the single crystal of Si terminated with the hydrogen atoms, of at least one selected from the group consisting of Al, Ga, and In. A buffer layer containing at least In and Sb is formed on the initial layer. A semiconductor thin film containing at least In and Sb is formed on the buffer layer at a temperature higher than the temperature at which the buffer layer is started to be formed. There is also disclosed a method of fabricating a Hall-effect device. This method is initiated with forming a semiconductor thin film by making use of the above-described fabrication method. Then, electrodes are attached to the thin film.

摘要翻译： 通过制备具有由Si的单晶组成的表面的衬底来开始制造半导体薄膜的方法。 该表面具有氧化膜。 然后，除去氧化膜。 表面上的Si原子的悬挂键用氢原子终止。 在由Al，Ga和In组成的组中选出的至少一种的氢原子的单结晶的基板上形成初始层。 在初始层上形成至少含有In和Sb的缓冲层。 至少含有In和Sb的半导体薄膜在高于开始形成缓冲层的温度的温度下形成在缓冲层上。 还公开了一种制造霍尔效应器件的方法。 通过利用上述制造方法形成半导体薄膜来开始该方法。 然后，电极附着在薄膜上。