公开(公告)号：US08191505B2

公开(公告)日：2012-06-05

申请号：US12457834

申请日：2009-06-23

申请人： Takayuki Kamaishi ,  Akinori Shimamura ,  Masato Morishima

发明人： Takayuki Kamaishi ,  Akinori Shimamura ,  Masato Morishima

IPC分类号： C23C16/507 ,  C23C16/503 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01J37/32449 ,  H01J37/3244 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67126

摘要： A processing gas introducing mechanism for introducing a processing gas into a processing space is provided between a plasma generation unit and a chamber of a plasma processing apparatus. The processing gas introducing mechanism includes a gas introducing base having therein a gas introducing path for introducing the processing gas into the processing space, and a near ring-shaped gas introducing plate equipped in the hole part of the gas introducing base such that it can be detached therefrom. Herein, the gas introducing base has a hole part forming one portion of the processing space in a central portion thereof, and the gas introducing plate has plural gas discharge holes communicating with the processing space to discharge thereinto the processing gas from the gas introducing path.

摘要翻译： 在等离子体产生单元和等离子体处理装置的室之间设置有用于将处理气体引入处理空间的处理气体引入机构。 处理气体引入机构包括：气体导入基座，其具有用于将处理气体导入处理空间的气体导入路径，以及配置在气体导入基座的孔部的近环状气体导入板， 从中分离。 这里，气体导入基部具有在其中央部形成处理空间的一部分的孔部，气体导入板具有与处理空间连通的多个排气孔，从气体导入路径排出处理气体。

公开(公告)号：US20080011734A1

公开(公告)日：2008-01-17

申请号：US11773241

申请日：2007-07-03

申请人： Sumi TANAKA ,  Takayuki Kamaishi ,  Kouki Suzuki

发明人： Sumi TANAKA ,  Takayuki Kamaishi ,  Kouki Suzuki

IPC分类号： F27B5/14

CPC分类号： H01L21/67017 ,  C23C16/45521 ,  C23C16/4584 ,  H01L21/67115

摘要： A processing gas is prevented from entering into a space below a placement table. A supporting surface 62 for supporting the lower face of a placement table 58 is provided at an inner circumferential portion of the upper end of a support 56. A circumferentially extending purge gas groove 64 is formed outside the supporting surface 62, in an intermediate circumferential portion of the upper end of the support 56. A narrow flow path 68 is provided outside the purge gas groove 64, at a position corresponding to an outer circumferential portion of the upper end of the support 56. A purge gas fed from purge gas-feeding means 66 into the purge gas groove diffuses in the circumferential direction in the purge gas groove 64 and flows out to the outside from the narrow flow path 68. Such a flow of the purge gas prevents a processing gas from entering into the purge gas groove 64 and a space S1 below the placement table.

摘要翻译： 防止处理气体进入放置台下方的空间。 用于支撑放置台58的下表面的支撑表面62设置在支撑件56的上端的内圆周部分。 周向延伸的净化气体槽64形成在支撑表面62的外侧，在支撑件56的上端的中间圆周部分。 在对应于支撑件56的上端的外周部分的位置处，在吹扫气体槽64的外侧设置有窄流路68。 从净化气体供给装置66供给到净化气体槽中的净化气体在净化气体槽64中沿圆周方向扩散，从窄流路68流出到外部。 吹扫气体的这种流动防止了处理气体进入清洗气体槽64和放置台下面的空间S1。

公开(公告)号：US20060060141A1

公开(公告)日：2006-03-23

申请号：US11264309

申请日：2005-11-02

申请人： Takayuki Kamaishi ,  Akinori Shimamura ,  Masato Morishima

发明人： Takayuki Kamaishi ,  Akinori Shimamura ,  Masato Morishima

IPC分类号： H01L21/306 ,  C23C16/00

CPC分类号： H01J37/32449 ,  H01J37/3244 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67126

摘要： A processing gas introducing mechanism for introducing a processing gas into a processing space is provided between a plasma generation unit and a chamber of a plasma processing apparatus. The processing gas introducing mechanism includes a gas introducing base having therein a gas introducing path for introducing the processing gas into the processing space, and a near ring-shaped gas introducing plate equipped in the hole part of the gas introducing base such that it can be detached therefrom. Herein, the gas introducing base has a hole part forming one portion of the processing space in a central portion thereof, and the gas introducing plate has plural gas discharge holes communicating with the processing space to discharge thereinto the processing gas from the gas introducing path.

公开(公告)号：US07250094B2

公开(公告)日：2007-07-31

申请号：US11350766

申请日：2006-02-10

申请人： Sumi Tanaka ,  Takayuki Kamaishi ,  Kouki Suzuki

发明人： Sumi Tanaka ,  Takayuki Kamaishi ,  Kouki Suzuki

IPC分类号： H01L21/306 ,  F27B5/14

CPC分类号： H01L21/67017 ,  C23C16/45521 ,  C23C16/4584 ,  H01L21/67115

摘要： A processing gas is prevented from entering into a space below a placement table. A supporting surface for supporting the lower face of a placement table is provided at an inner circumferential portion of the upper end of a support column. A circumferentially extending purge gas groove is formed outside the supporting surface, in an intermediate circumferential portion of the upper end of the support column. A narrow flow path is provided outside the purge gas groove, at a position corresponding to an outer circumferential portion of the upper end of the support column. A purge gas diffuses in the circumferential direction in the purge gas groove and flows out to the outside from the narrow flow path. Such a flow of the purge gas prevents a processing gas from entering into the purge gas groove and a space below the placement table.

摘要翻译： 防止处理气体进入放置台下方的空间。 用于支撑放置台的下表面的支撑表面设置在支撑柱的上端的内周部。 在支撑柱的上端的中间圆周部分中，在支撑表面的外侧形成周向延伸的吹扫气体槽。 在吹扫气体槽的外部，在对应于支撑柱的上端的外周部的位置处设置窄流路。 吹扫气体在吹扫气体槽中沿圆周方向扩散，并从窄流路流出到外部。 吹扫气体的这种流动防止了处理气体进入吹扫气体槽和放置台下方的空间。

公开(公告)号：US07769279B2

公开(公告)日：2010-08-03

申请号：US11773241

申请日：2007-07-03

申请人： Sumi Tanaka ,  Takayuki Kamaishi ,  Kouki Suzuki

发明人： Sumi Tanaka ,  Takayuki Kamaishi ,  Kouki Suzuki

IPC分类号： A21B2/00

CPC分类号： H01L21/67017 ,  C23C16/45521 ,  C23C16/4584 ,  H01L21/67115

摘要： A processing gas is prevented from entering into a space below a placement table. A supporting surface 62 for supporting the lower face of a placement table 58 is provided at an inner circumferential portion of the upper end of a support 56. A circumferentially extending purge gas groove 64 is formed outside the supporting surface 62, in an intermediate circumferential portion of the upper end of the support 56. A narrow flow path 68 is provided outside the purge gas groove 64, at a position corresponding to an outer circumferential portion of the upper end of the support 56. A purge gas fed from purge gas-feeding means 66 into the purge gas groove diffuses in the circumferential direction in the purge gas groove 64 and flows out to the outside from the narrow flow path 68. Such a flow of the purge gas prevents a processing gas from entering into the purge gas groove 64 and a space S1 below the placement table.

摘要翻译： 防止处理气体进入放置台下方的空间。 在支撑体56的上端的内周部设置有用于支撑放置台58的下表面的支撑面62.在圆周方向延伸的吹扫气体槽64形成在支撑面62的外侧， 在吹扫气体槽64的外部，在对应于支撑件56的上端的外周部分的位置处设置有窄流路68.从吹扫气体供给供给的净化气体 吹扫气体槽中的装置66在吹扫气体槽64中沿圆周方向扩散，并从窄流路68流出到外部。这种净化气体的流动防止了处理气体进入净化气体槽64 以及放置台下方的空格S1。

公开(公告)号：US20120145697A1

公开(公告)日：2012-06-14

申请号：US13390825

申请日：2010-08-11

申请人： Tomohito Komatsu ,  Takayuki Kamaishi ,  Ryoji Yamazaki

发明人： Tomohito Komatsu ,  Takayuki Kamaishi ,  Ryoji Yamazaki

IPC分类号： F27D11/00

CPC分类号： H01L21/67115 ,  H01L21/68792

摘要： A heat treatment apparatus is configured to include: a treatment chamber for accommodating therein a wafer; a substrate supporting unit for horizontally supporting the wafer in the treatment chamber; and a lamp unit provided above the treatment chamber. The lamp unit includes: a base member; a plurality of lamps provided on the lower surface of the base member whose front ends face downwardly; a plurality of ring-shaped reflectors concentrically provided on the lower surface of the base member to protrude downward; and a cooling head for supplying a cooling medium into the reflectors. At least some of the lamps are arranged along the reflectors, and cooling medium channels, each inner space of which is formed as a ring-shaped space, are respectively provided within the reflectors in the extending directions of the reflectors.

摘要翻译： 一种热处理设备被配置为包括：处理室，用于在其中容纳晶片; 用于在处理室中水平地支撑晶片的基板支撑单元; 以及设置在处理室上方的灯单元。 灯单元包括：基座构件; 多个灯，其设置在前端朝下的基座构件的下表面上; 多个环状反射体，同心地设置在基部构件的下表面上以向下突出; 以及用于将冷却介质供应到反射器中的冷却头。 至少一些灯沿着反射器布置，并且每个内部空间形成为环形空间的冷却介质通道分别在反射器的延伸方向上设置在反射器内。

公开(公告)号：US20100037959A1

公开(公告)日：2010-02-18

申请号：US12514527

申请日：2007-11-13

申请人： Takayuki Kamaishi ,  Eiichi Komori ,  Susumu Yamauchi ,  Akifumi Hayashi

发明人： Takayuki Kamaishi ,  Eiichi Komori ,  Susumu Yamauchi ,  Akifumi Hayashi

IPC分类号： H01L21/67

CPC分类号： G01F15/005 ,  G01F1/68 ,  G05D7/0635 ,  Y10T137/0396 ,  Y10T137/8593

摘要： A method of supplying a process gas comprises a step in which there is generated a process gas that is polymerizable depending on a temperature, and a step in which the thus generated process gas is supplied to a processing apparatus 4 configured to perform a predetermined process to an object to be processed W under a reduced-pressure atmosphere. When the process gas is supplied to the processing apparatus 4, a flow rate of the process gas is controlled by using a mass flow-rate control unit of a lower differential pressure type having a diaphragm 80, in which an appropriate operation range of a supply pressure is set lower than the atmospheric pressure. Thus, a supply rate (actual flow rate) of a process gas such as an HF gas that is polymerizable depending on a temperature can be precisely controlled in a stable manner.

摘要翻译： 提供处理气体的方法包括产生根据温度可聚合的处理气体的步骤，以及将由此产生的处理气体供给到被配置为执行预定处理的处理装置4的步骤 在减压气氛下待处理的物体W。 当处理气体被供应到处理装置4时，通过使用具有隔膜80的具有较低压差类型的质量流量控制单元来控制处理气体的流量，其中供应的适当操作范围 压力设定为低于大气压力。 因此，可以稳定地精确地控制可根据温度聚合的诸如HF气体的处理气体的供给速率（实际流量）。

公开(公告)号：US20090260762A1

公开(公告)日：2009-10-22

申请号：US12457834

申请日：2009-06-23

申请人： Takayuki Kamaishi ,  Akinori Shimamura ,  Masato Morishima

发明人： Takayuki Kamaishi ,  Akinori Shimamura ,  Masato Morishima

IPC分类号： C23F1/08 ,  C23C16/505

CPC分类号： H01J37/32449 ,  H01J37/3244 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/67126

摘要： A processing gas introducing mechanism for introducing a processing gas into a processing space is provided between a plasma generation unit and a chamber of a plasma processing apparatus. The processing gas introducing mechanism includes a gas introducing base having therein a gas introducing path for introducing the processing gas into the processing space, and a near ring-shaped gas introducing plate equipped in the hole part of the gas introducing base such that it can be detached therefrom. Herein, the gas introducing base has a hole part forming one portion of the processing space in a central portion thereof, and the gas introducing plate has plural gas discharge holes communicating with the processing space to discharge thereinto the processing gas from the gas introducing path.

摘要翻译： 在等离子体产生单元和等离子体处理装置的室之间设置有用于将处理气体引入处理空间的处理气体引入机构。 处理气体引入机构包括：气体导入基座，其具有用于将处理气体导入处理空间的气体导入路径，以及配置在气体导入基座的孔部的近环状气体导入板， 从中分离。 这里，气体导入基部具有在其中央部形成处理空间的一部分的孔部，气体导入板具有与处理空间连通的多个排气孔，从气体导入路径排出处理气体。

公开(公告)号：US20060124060A1

公开(公告)日：2006-06-15

申请号：US11350766

申请日：2006-02-10

申请人： Sumi Tanaka ,  Takayuki Kamaishi ,  Kouki Suzuki

发明人： Sumi Tanaka ,  Takayuki Kamaishi ,  Kouki Suzuki

IPC分类号： C23C16/00

CPC分类号： H01L21/67017 ,  C23C16/45521 ,  C23C16/4584 ,  H01L21/67115

摘要： A processing gas is prevented from entering into a space below a placement table. A supporting surface 62 for supporting the lower face of a placement table 58 is provided at an inner circumferential portion of the upper end of a support 56. A circumferentially extending purge gas groove 64 is formed outside the supporting surface 62, in an intermediate circumferential portion of the upper end of the support 56. A narrow flow path 68 is provided outside the purge gas groove 64, at a position corresponding to an outer circumferential portion of the upper end of the support 56. A purge gas fed from purge gas-feeding means 66 into the purge gas groove diffuses in the circumferential direction in the purge gas groove 64 and flows out to the outside from the narrow flow path 68. Such a flow of the purge gas prevents a processing gas from entering into the purge gas groove 64 and a space S1 below the placement table.

摘要翻译： 防止处理气体进入放置台下方的空间。 用于支撑放置台58的下表面的支撑表面62设置在支撑件56的上端的内圆周部分。 周向延伸的净化气体槽64形成在支撑表面62的外侧，在支撑件56的上端的中间圆周部分。 在对应于支撑件56的上端的外周部分的位置处，在吹扫气体槽64的外侧设置有窄流路68。 从净化气体供给装置66供给到净化气体槽中的净化气体在净化气体槽64中沿圆周方向扩散，从窄流路68流出到外部。 吹扫气体的这种流动防止了处理气体进入清洗气体槽64和放置台下面的空间S1。