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197 条记录 (耗时 0.028 秒)

    Receiver
    1.
    发明授权
    Receiver 有权
    接收器

    公开(公告)号：US09136893B2

    公开(公告)日：2015-09-15

    申请号：US13520268

    申请日：2011-01-12

    申请人： Takana Kaho ,  Yo Yamaguchi ,  Hiroyuki Shiba ,  Doohwan Lee ,  Takayuki Yamada ,  Kazunori Akabane ,  Kazuhiro Uehara

    发明人： Takana Kaho ,  Yo Yamaguchi ,  Hiroyuki Shiba ,  Doohwan Lee ,  Takayuki Yamada ,  Kazunori Akabane ,  Kazuhiro Uehara

    IPC分类号： H04B1/16 ,  H04B1/30 ,  H04B1/00

    CPC分类号： H04B1/30 ,  H04B1/0057

    摘要： A receiver includes a local signal generator, a power phase adjuster, and a frequency converter so as to perform frequency conversion on signals included in a plurality of radio frequency bands. The local signal generator supplies a plurality of local signals. The power phase adjuster adjusts local signals in terms of signal power or relative phases. The frequency converter performs frequency conversion on radio frequency bands by use of local signals adjusted with the power phase adjuster, thus sorting them in a desired frequency range.

    摘要翻译： 接收机包括本地信号发生器，电力相位调节器和频率转换器，以对包括在多个无线电频带中的信号执行频率转换。 本地信号发生器提供多个本地信号。 功率相位调节器根据信号功率或相对相位调整本地信号。 变频器通过使用通过电力相位调节器调整的本地信号在射频上执行频率转换，从而将它们分组到期望的频率范围。

    Factor taking part in transcription control
    2.
    发明授权
    Factor taking part in transcription control 有权
    参与转录控制的因子

    公开(公告)号：US08889408B2

    公开(公告)日：2014-11-18

    申请号：US13296878

    申请日：2011-11-15

    申请人： Shuki Mizutani ,  Takayuki Yamada

    发明人： Shuki Mizutani ,  Takayuki Yamada

    IPC分类号： C12N15/85 ,  C12N15/11 ,  C07K14/47

    CPC分类号： C07K14/4702

    摘要： HDART binds with HDAC (histone deacetylase) and functions as a repressor. HDART directly binds with Skip, which functions as a transcription co-activator of nuclear receptors, to repress the transcription by the nuclear receptor. Moreover, HDART is a transcription co-repressor of nuclear receptors, and binds with HDAC wherein transcription can be strongly repressed through the histone deacetylization of HDAC. On the other hand, a dominant negative peptide of HDART can be obtained, and it has been confirmed that, in contrast with the full-length HDART protein, this peptide activates transcription. In particular, the ability of this peptide to activate transcription by the retinoic acid receptor exceeds that of all-trans retinoic acid (ATRA).

    摘要翻译： HDART与HDAC结合（组蛋白脱乙酰酶），起到阻遏物的作用。 HDART与作为核受体的转录共激活子的Skip直接结合，以抑制核受体的转录。 此外，HDART是核受体的转录共抑制因子，并与HDAC结合，其中可以通过HDAC的组蛋白脱乙酰化强烈抑制转录。 另一方面，可以获得HDART的显性负性肽，并且已经证实，与全长HDART蛋白质相反，该肽激活转录。 特别地，该肽激活视黄酸受体转录的能力超过全反式视黄酸（ATRA）的能力。

    Semiconductor device having gate insulating film including high dielectric material
    4.
    发明授权
    Semiconductor device having gate insulating film including high dielectric material 有权
    具有包括高电介质材料的栅极绝缘膜的半导体器件

    公开(公告)号：US08558321B2

    公开(公告)日：2013-10-15

    申请号：US13005085

    申请日：2011-01-12

    申请人： Hiroji Shimizu ,  Yoshihiro Sato ,  Hideyuki Arai ,  Takayuki Yamada ,  Tsutomu Oosuka

    发明人： Hiroji Shimizu ,  Yoshihiro Sato ,  Hideyuki Arai ,  Takayuki Yamada ,  Tsutomu Oosuka

    IPC分类号： H01L21/40

    CPC分类号： H01L27/0629 ,  H01L28/20

    摘要： A semiconductor device includes: a first MIS transistor of a first conductivity type having a first active region as a region of a semiconductor substrate surrounded by an element isolation region formed in an upper portion of the semiconductor substrate, a first gate insulating film having a first high dielectric film formed on the first active region, and a first gate electrode formed on the first gate insulating film; and a resistance element having a second high dielectric film formed on the element isolation region and a resistance layer made of silicon formed on the second high dielectric film. The first high dielectric film and the second high dielectric film include the same high dielectric material, and the first high dielectric film includes a first adjustment metal, but the second high dielectric film does not include the first adjustment metal.

    摘要翻译： 一种半导体器件包括：第一导电类型的第一MIS晶体管，具有作为由半导体衬底的上部形成的元件隔离区围绕的半导体衬底的区域的第一有源区，第一栅绝缘膜， 形成在第一有源区上的高电介质膜和形成在第一栅极绝缘膜上的第一栅电极; 以及电阻元件，其具有形成在元件隔离区域上的第二高电介质膜和形成在第二高介电膜上的由硅制成的电阻层。 第一高介电膜和第二高电介质膜包括相同的高介电材料，第一高电介质膜包括第一调节金属，但第二高电介质膜不包括第一调节金属。

    Semiconductor device and fabrication method for the same
    6.
    发明授权
    Semiconductor device and fabrication method for the same 有权
    半导体器件及其制造方法相同

    公开(公告)号：US08395219B2

    公开(公告)日：2013-03-12

    申请号：US13167362

    申请日：2011-06-23

    申请人： Riichirou Mitsuhashi ,  Takayuki Yamada

    发明人： Riichirou Mitsuhashi ,  Takayuki Yamada

    IPC分类号： H01L21/70

    CPC分类号： H01L21/82345 ,  H01L21/823462 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517

    摘要： The semiconductor device includes a first transistor and a second transistor formed in a semiconductor substrate. The first transistor includes: a first gate insulating film formed on the semiconductor substrate; and a first gate electrode formed on the first gate insulating film. The second transistor includes: a second gate insulating film formed on the semiconductor substrate; and a second gate electrode formed on the second gate insulating film. The first gate insulating film includes a first insulating material with a first element diffused therein, the second gate insulating film includes the first insulating material, and the amount of the first element contained in the first gate insulating film is greater than the amount of the first element contained in the second gate insulating film.

    摘要翻译： 半导体器件包括形成在半导体衬底中的第一晶体管和第二晶体管。 第一晶体管包括：形成在半导体衬底上的第一栅极绝缘膜; 以及形成在第一栅极绝缘膜上的第一栅电极。 第二晶体管包括：形成在半导体衬底上的第二栅极绝缘膜; 以及形成在第二栅极绝缘膜上的第二栅电极。 所述第一栅极绝缘膜包括第一绝缘材料，其中扩散有第一元素，所述第二栅极绝缘膜包括所述第一绝缘材料，并且所述第一栅极绝缘膜中包含的所述第一元素的量大于所述第一绝缘膜的量 元件包含在第二栅极绝缘膜中。

    RECEIVER
    8.
    发明申请
    RECEIVER 有权
    接收器

    公开(公告)号：US20120281718A1

    公开(公告)日：2012-11-08

    申请号：US13520268

    申请日：2011-01-12

    申请人： Takana Kaho ,  Yo Yamaguchi ,  Hiroyuki Shiba ,  Doohwan Lee ,  Takayuki Yamada ,  Kazunori Akabane ,  Kazuhiro Uehara

    发明人： Takana Kaho ,  Yo Yamaguchi ,  Hiroyuki Shiba ,  Doohwan Lee ,  Takayuki Yamada ,  Kazunori Akabane ,  Kazuhiro Uehara

    IPC分类号： H04B1/18

    CPC分类号： H04B1/30 ,  H04B1/0057

    摘要： A receiver includes a local signal generator, a power phase adjuster, and a frequency converter so as to perform frequency conversion on signals included in a plurality of radio frequency bands. The local signal generator supplies a plurality of local signals. The power phase adjuster adjusts local signals in terms of signal power or relative phases. The frequency converter performs frequency conversion on radio frequency bands by use of local signals adjusted with the power phase adjuster, thus sorting them in a desired frequency range.

    摘要翻译： 接收机包括本地信号发生器，电力相位调节器和频率转换器，以对包括在多个无线电频带中的信号执行频率转换。 本地信号发生器提供多个本地信号。 功率相位调节器根据信号功率或相对相位调整本地信号。 变频器通过使用通过电力相位调节器调整的本地信号在射频上执行频率转换，从而将它们分组到期望的频率范围。

    METHOD OF ADJUSTING CAPACITIES OF COMBUSTION CHAMBERS OF A MULTI-CYLINDER ENGINE
    9.
    发明申请
    METHOD OF ADJUSTING CAPACITIES OF COMBUSTION CHAMBERS OF A MULTI-CYLINDER ENGINE 有权
    调整多缸发动机燃烧室容量的方法

    公开(公告)号：US20110296684A1

    公开(公告)日：2011-12-08

    申请号：US13100173

    申请日：2011-05-03

    申请人： Tsuyoshi Yamamoto ,  Yasushi Nakahara ,  Takayuki Yamada ,  Kazuya Hayashi ,  Yuichiro Ikeda

    发明人： Tsuyoshi Yamamoto ,  Yasushi Nakahara ,  Takayuki Yamada ,  Kazuya Hayashi ,  Yuichiro Ikeda

    IPC分类号： B23P11/00

    CPC分类号： B23P13/02 ,  B23P6/02 ,  F02F2200/06 ,  Y10T29/4927

    摘要： This disclosure provides a method of adjusting capacities of combustion chambers of a multi-cylinder engine having a cylinder head with recessed parts that partially form the combustion chambers and a mating surface for mating with a cylinder block, which includes casting a cylinder head material having flat reference surfaces on top of the recessed parts of the cylinder head, machining the cylinder head material to form the mating surface, measuring distances in a height direction from the mating surface to the reference surfaces, respectively, and adjusting machining margins of machining portions of the reference surfaces of the recessed parts based on the measured height direction distances.

    摘要翻译： 本公开提供了一种调节多缸发动机的燃烧室的容量的方法，所述多缸发动机的气缸盖具有部分地形成燃烧室的凹部和用于与气缸体配合的配合表面，该配合表面包括铸造具有扁平的气缸盖材料 参考表面在气缸盖的凹陷部分的顶部上，加工气缸盖材料以形成配合表面，分别测量从配合表面到参考表面的高度方向上的距离，并且调整加工部分的加工余量 基于所测量的高度方向距离，凹进部分的参考表面。

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    10.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20110284935A1

    公开(公告)日：2011-11-24

    申请号：US13029556

    申请日：2011-02-17

    申请人： Takayuki YAMADA

    发明人： Takayuki YAMADA

    IPC分类号： H01L29/78 ,  H01L21/283

    CPC分类号： H01L21/76897 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656

    摘要： A semiconductor device includes: a semiconductor substrate; a gate electrode formed on the semiconductor substrate with a gate insulating film interposed therebetween; a side wall spacer formed on a side wall of the gate electrode; source/drain regions formed in opposing portions of the semiconductor substrate with the gate electrode and the side wall spacer interposed therebetween; and a stress-applying insulating film covering the gate electrode, the side wall spacer, and an upper surface of the semiconductor substrate. A gate-length-direction thickness of an upper portion of the side wall spacer is at least larger than a gate-length-direction thickness of a middle portion thereof.

    摘要翻译： 半导体器件包括：半导体衬底; 形成在半导体衬底上的栅电极，其间插入有栅极绝缘膜; 形成在所述栅电极的侧壁上的侧壁间隔物; 源极/漏极区域形成在半导体衬底的相对部分中，栅电极和侧壁间隔物插入其间; 以及覆盖所述栅电极，所述侧壁间隔物和所述半导体衬底的上表面的应力施加绝缘膜。 侧壁间隔件的上部的栅长方向厚度至少大于其中间部分的栅极长度方向厚度。