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    Resin encapsulated semiconductor device
    3.
    发明授权
    Resin encapsulated semiconductor device 失效
    树脂封装半导体器件

    公开(公告)号：US4758875A

    公开(公告)日：1988-07-19

    申请号：US266198

    申请日：1981-05-22

    申请人： Koji Fujisaki ,  Akio Nishikawa ,  Shunichi Numata ,  Hiroshi Suzuki ,  Takeshi Komaru ,  Daisuke Makino

    发明人： Koji Fujisaki ,  Akio Nishikawa ,  Shunichi Numata ,  Hiroshi Suzuki ,  Takeshi Komaru ,  Daisuke Makino

    IPC分类号： C08G73/00 ,  C08G73/10 ,  H01L21/312 ,  H01L23/29 ,  H01L23/31 ,  H01L23/48 ,  H01L23/28 ,  H01L29/34

    CPC分类号： H01L21/312 ,  H01L2224/48091 ,  H01L2224/8592 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/09701 ,  H01L2924/10253 ,  H01L2924/181 ,  H01L2924/3025

    摘要： Disclosed is a resin encapsulated semiconductor memory device comprising a semiconductor memory element, a package encapsulating the memory element and an .alpha.-rays shielding layer made from a water-resistant aromatic polyimide polymer, interposed between the memory element and the package, the aromatic polyimide polymer having a saturated water absorption rate of 1% or less. The polyimide polymer is exemplified as the polymer having the following recurring units: ##STR1## wherein R is an aliphatic or aromatic group; R.sub.1 and R.sub.2 are independently a hydrogen atom, an alkyl group having 1 to 4 carbon atoms or CF.sub.3 ; and R.sub.3 to R.sub.6 are independently a hydrogen atom, a halogen atom or an alkyl group having 1 to 4 carbon atoms. The disclosure is also concerned with resin encapsulated semiconductor devices in which the aromatic polyimide polymer of low water absorption is used as an insulating layer or passivation film.

    摘要翻译： 公开了一种树脂封装的半导体存储器件，其包括半导体存储元件，封装存储元件的封装以及介于该存储元件与封装之间的由防水芳香族聚酰亚胺聚合物制成的α-阵列屏蔽层，芳族聚酰亚胺聚合物 饱和吸水率为1％以下。 聚酰亚胺聚合物作为具有以下重复单元的聚合物被列举：其中R是脂族或芳族基团; R1和R2独立地为氢原子，具有1至4个碳原子的烷基或CF 3; R 3〜R 6独立地为氢原子，卤原子或碳原子数为1〜4的烷基。 本发明还涉及使用低吸水性的芳族聚酰亚胺聚合物作为绝缘层或钝化膜的树脂封装的半导体器件。