公开(公告)号：US06635938B1

公开(公告)日：2003-10-21

申请号：US09716219

申请日：2000-11-21

申请人： Takumi Nakahata ,  Shigemitsu Maruno ,  Taisuke Furukawa ,  Naruhisa Miura ,  Toshiyuki Oishi ,  Yasunori Tokuda

发明人： Takumi Nakahata ,  Shigemitsu Maruno ,  Taisuke Furukawa ,  Naruhisa Miura ,  Toshiyuki Oishi ,  Yasunori Tokuda

IPC分类号： H01L2994

CPC分类号： H01L29/4983 ,  H01L21/823418 ,  H01L21/823468 ,  H01L29/41783 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/66628

摘要： A polysilicon nitride film is formed to cover a polysilicon gate. By heat treatment of the silicon nitride film in an oxygen atmosphere, a silicon oxinitride film is formed. By anisotropically etching the silicon oxinitride film and the silicon nitride film, a sidewall insulating film is formed. By epitaxial growth, selective silicon films of a prescribed film thickness are formed on source and drain regions. During this period, silicon islands are not deposited on the surface of sidewall insulating film. Consequently, a semiconductor device including a transistor of a superior electrical insulation can be obtained.

摘要翻译： 形成多晶硅氮化物膜以覆盖多晶硅栅极。 通过在氧气氛中对氮化硅膜进行热处理，形成硅氧氮化物膜。 通过各向异性蚀刻氧氮化硅膜和氮化硅膜，形成侧壁绝缘膜。 通过外延生长，在源极和漏极区域上形成规定膜厚度的选择性硅膜。 在此期间，硅岛不会沉积在侧壁绝缘膜的表面上。 因此，可以获得包括具有优异的电绝缘的晶体管的半导体器件。

公开(公告)号：US08558248B2

公开(公告)日：2013-10-15

申请号：US12234371

申请日：2008-09-19

申请人： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Takumi Nakahata

发明人： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Takumi Nakahata

IPC分类号： H01L33/00

CPC分类号： H01L23/53219 ,  G02F2001/136295 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/12438 ,  H01L2924/00

摘要： In accordance with one aspect of the present invention, an Al alloy film contains a first additive element composed of Ni, and at least one type of second additive element selected from the group consisting of Group 2A alkaline earth metals and Groups 3B and 4B metalloids in Period 2 or 3 of the periodic table of the elements. Furthermore, the composition ratio of the first additive element is 0.5-5 at %, and the composition ratio of the second additive element is 0.1-3 at %.

摘要翻译： 根据本发明的一个方面，Al合金膜含有由Ni组成的第一添加元素，以及选自2A族碱土金属和3B族和4B族金属中的至少一种第二添加元素 元素周期表的周期2或3。 此外，第一添加元素的组成比为0.5〜5原子％，第二添加元素的组成比为0.1〜3原子％。

公开(公告)号：US20120160319A1

公开(公告)日：2012-06-28

申请号：US13394023

申请日：2009-09-04

申请人： Takumi Nakahata ,  Kazunori Inoue ,  Yusuke Yamagata

发明人： Takumi Nakahata ,  Kazunori Inoue ,  Yusuke Yamagata

IPC分类号： H01L31/0232 ,  H01L31/0224 ,  H01L31/18

CPC分类号： H01L31/0527 ,  H01L31/022425 ,  H01L31/02245 ,  H01L31/0392 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/056 ,  Y02E10/52

摘要： In a solar battery including: a photoelectric conversion layer that converts light into electricity; and a reflecting electrode layer that is provided on an opposite side of a light incident side in the photoelectric conversion layer and reflects light passed through the photoelectric conversion layer to the photoelectric conversion layer side, to realize a reflecting electrode layer having excellent adhesion and thermal corrosion resistance, stable electrical characteristics and satisfactory light reflection characteristics and to obtain a solar battery having high reliability, excellent electrical characteristics and optical characteristics, the reflecting electrode layer includes, on the photoelectric conversion layer side, a metal layer containing silver as a main component and containing nitrogen.

摘要翻译： 一种太阳能电池，包括：将光转换成电的光电转换层; 以及反射电极层，其设置在光电转换层的光入射侧的相反侧，并将通过光电转换层的光反射到光电转换层侧，以实现具有优异的粘附性和热腐蚀性的反射电极层 电阻，稳定的电特性和良好的光反射特性，并且获得具有高可靠性，优异的电特性和光学特性的太阳能电池，反射电极层在光电转换层侧包括含有银作为主要成分的金属层和 含氮。

公开(公告)号：US20060273422A1

公开(公告)日：2006-12-07

申请号：US11276339

申请日：2006-02-24

申请人： Atsushi ENDO ,  Takumi NAKAHATA

发明人： Atsushi ENDO ,  Takumi NAKAHATA

IPC分类号： H01L31/00

CPC分类号： G02F1/136204 ,  G01R31/2818 ,  G02F2001/136254

摘要： A thin film transistor for characteristic inspection has a source, a gate and a drain connected to electrode terminals, namely to a source terminal, a gate terminal and a drain terminal, respectively. The electrode terminals are connected to a potential uniformalizing terminal via potential uniformalizing wiring in order to uniform the potentials of the electrode terminals. When conducting a characteristic inspection, a voltage is applied across the electrode terminals and the potential uniformalizing terminal to melt the potential uniformalizing wiring.

摘要翻译： 用于特性检查的薄膜晶体管具有分别连接到电极端子的源极，栅极和漏极，即源极端子，栅极端子和漏极端子。 电极端子通过电势均匀布线连接到电位均匀化端子，以使电极端子的电位均匀。 进行特性检查时，在电极端子和势均匀端子之间施加电压，使电位均匀化接线熔化。

公开(公告)号：US06232192B1

公开(公告)日：2001-05-15

申请号：US09484410

申请日：2000-01-18

申请人： Satoshi Yamakawa ,  Yasunori Tokuda ,  Takumi Nakahata ,  Taisuke Furukawa ,  Shigemitsu Maruno

发明人： Satoshi Yamakawa ,  Yasunori Tokuda ,  Takumi Nakahata ,  Taisuke Furukawa ,  Shigemitsu Maruno

IPC分类号： H01L21336

CPC分类号： H01L21/28194 ,  H01L21/2257 ,  H01L21/26586 ,  H01L21/28176 ,  H01L21/28247 ,  H01L21/28512 ,  H01L21/28518 ,  H01L21/28525 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/6653 ,  H01L29/66628

摘要： Source/drain diffusion regions are formed on the silicon substrate such that the source/drain diffusion regions sandwich a gate electrode from both sides on the silicon substrate. Sidewall oxide films are formed, one on each side surface of the gate electrode. Recessed portions are formed in the extension portions E beneath the sidewall oxide films. Source/drain electrodes are formed to fill the recessed portions. Thus, the sheet resistance of the respective regions including a pair of source/drain diffusion regions and source/drain electrodes is reduced, and a semiconductor device with a field-effect transistor having an improved current drivability is obtained.

摘要翻译： 源极/漏极扩散区域形成在硅衬底上，使得源极/漏极扩散区域在硅衬底上从两侧夹着栅电极。 在栅电极的每个侧表面上形成侧壁氧化膜。 在侧壁氧化膜下面的延伸部分E中形成有凹入部分。 形成源/漏电极以填充凹部。 因此，包括一对源极/漏极扩散区域和源极/漏极电极的各个区域的薄层电阻减小，并且获得具有改善的电流驱动能力的具有场效应晶体管的半导体器件。

公开(公告)号：US07834962B2

公开(公告)日：2010-11-16

申请号：US12330105

申请日：2008-12-08

申请人： Tetsuya Satake ,  Takumi Nakahata ,  Takanori Okumura ,  Yusuke Yamagata ,  Takeshi Ono ,  Naoki Nakagawa ,  Suguru Nagae

发明人： Tetsuya Satake ,  Takumi Nakahata ,  Takanori Okumura ,  Yusuke Yamagata ,  Takeshi Ono ,  Naoki Nakagawa ,  Suguru Nagae

IPC分类号： G02F1/1333 ,  G02F1/1335

CPC分类号： G02F1/133305 ,  G02F1/133512 ,  G02F2001/133354

摘要： In a liquid crystal display (10) having a curved display surface, long sides of pixel structures (11) are arranged along the curve direction (Y) of the display surface and on a side of counter substrate provided is a black matrix having a black matrix opening (41a) whose length in the curve direction (Y) is not longer than E−L {(T1/2)+(T2/2)+d}/R, assuming that the length of the display surface in the curve direction (Y) is L, the thickness of an array substrate is T1, the thickness of the counter substrate is T2, the size of the gap between the array substrate and the counter substrate is d, the radius of curvature of the curved display surface is R and the length of a long side of a pixel electrode (29) provided in each of the pixel structures (11) is E. It thereby becomes possible to suppress display unevenness resulting from positional misalignment of the two substrates due to curvature and provide a liquid crystal display achieving a high-quality display image.

摘要翻译： 在具有弯曲显示面的液晶显示器（10）中，像素结构（11）的长边沿着显示面的曲线方向（Y）配置，在相对基板的一侧设有具有黑色 假设曲线中的显示面的长度，曲线方向（Y）的长度不长于E-L {（T1 / 2）+（T2 / 2）+ d} / R的矩阵开口41a 方向（Y）为L，阵列基板的厚度为T1，对置基板的厚度为T2，阵列基板与对置基板的间隔尺寸为d，曲面显示面的曲率半径 是R，并且设置在每个像素结构（11）中的像素电极（29）的长边的长度为E.因此，由此可以抑制由于曲率而导致的两个基板的位置偏移导致的显示不均匀，并且提供 实现高质量显示图像的液晶显示器。

公开(公告)号：US20090290113A1

公开(公告)日：2009-11-26

申请号：US12471970

申请日：2009-05-26

申请人： Takumi Nakahata ,  Takanori Okumura ,  Yusuke Yamagata ,  Naoki Nakagawa ,  Masafumi Agari ,  Tetsuya Satake ,  Toru Kokogawa ,  Kenji Arita

发明人： Takumi Nakahata ,  Takanori Okumura ,  Yusuke Yamagata ,  Naoki Nakagawa ,  Masafumi Agari ,  Tetsuya Satake ,  Toru Kokogawa ,  Kenji Arita

IPC分类号： G02F1/1333 ,  B32B37/00

CPC分类号： B32B38/1866 ,  B32B2037/243 ,  B32B2309/10 ,  B32B2457/202 ,  G02F1/133305 ,  G02F2201/503

摘要： The display device includes a pair of insulating substrates arranged so as to be opposed, a bonding layer, and a strain suppressing plate. The bonding layer is provided on the outer surface side of one insulating substrate. The strain suppressing plate has rigidity higher than that of the insulating substrate to suppress the strain caused by curving the insulating substrate. The strain suppressing plate is fixed to the insulating substrate by the bonding layer.

摘要翻译： 显示装置包括一对绝缘基板，其被布置为相对，接合层和应变抑制板。 接合层设置在一个绝缘基板的外表面侧。 应变抑制板的刚性高于绝缘基板的刚性，以抑制由于弯曲绝缘基板引起的应变。 应变抑制板通过接合层固定在绝缘基板上。

公开(公告)号：US20090134407A1

公开(公告)日：2009-05-28

申请号：US12234371

申请日：2008-09-19

申请人： Kazunori INOUE ,  Nobuaki ISHIGA ,  Kensuke NAGAYAMA ,  Naoki TSUMURA ,  Takumi NAKAHATA

发明人： Kazunori INOUE ,  Nobuaki ISHIGA ,  Kensuke NAGAYAMA ,  Naoki TSUMURA ,  Takumi NAKAHATA

IPC分类号： H01L33/00 ,  B32B15/04

CPC分类号： H01L23/53219 ,  G02F2001/136295 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/12044 ,  Y10T428/12438 ,  H01L2924/00

摘要： In accordance with one aspect of the present invention, an Al alloy film contains a first additive element composed of Ni, and at least one type of second additive element selected from the group consisting of Group 2A alkaline earth metals and Groups 3B and 4B metalloids in Period 2 or 3 of the periodic table of the elements. Furthermore, the composition ratio of the first additive element is 0.5-5 at %, and the composition ratio of the second additive element is 0.1-3 at %.

摘要翻译： 根据本发明的一个方面，Al合金膜含有由Ni组成的第一添加元素，以及选自2A族碱土金属和3B族和4B族金属中的至少一种第二添加元素 元素周期表的周期2或3。 此外，第一添加元素的组成比为0.5〜5原子％，第二添加元素的组成比为0.1〜3原子％。

公开(公告)号：US06465851B1

公开(公告)日：2002-10-15

申请号：US08948260

申请日：1997-10-09

申请人： Takumi Nakahata ,  Satoshi Yamakawa ,  Yuji Abe

发明人： Takumi Nakahata ,  Satoshi Yamakawa ,  Yuji Abe

IPC分类号： H01L2976

CPC分类号： H01L21/31658 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/28525 ,  H01L21/28562 ,  H01L21/31662 ,  H01L21/32105 ,  H01L21/76801 ,  H01L21/7682 ,  H01L21/76828 ,  H01L21/76831 ,  H01L21/76888 ,  H01L21/76889 ,  H01L27/10814 ,  H01L27/10844 ,  H01L27/10855 ,  H01L27/10888 ,  Y10S438/906

摘要： Epitaxial silicon layers are formed on n+-source/drain regions of two MOS transistors neighboring to each other and formed on a silicon substrate, respectively. In this processing, polycrystalline silicon pieces are generated on an element isolating and insulating film and others. Thereafter, the silicon substrate is exposed to an oxygen atmosphere so that hydrogen reacts with silicon at the surfaces of the epitaxial silicon layers and the surfaces of the polycrystalline silicon pieces to form silicon oxide films and polycrystalline silicon pieces. Thereby, short-circuit between MOS transistors in neighboring memory cells is prevented, and a semiconductor device has a high electrical reliability.

摘要翻译： 外延硅层分别形成在两个相邻的MOS晶体管的n +源极/漏极区上，并形成在硅衬底上。 在该处理中，在元件隔离和绝缘膜等上产生多晶硅片。 此后，将硅衬底暴露于氧气氛，使得氢在外延硅层的表面和多晶硅片的表面与硅反应，以形成氧化硅膜和多晶硅片。 由此，防止了相邻存储单元中的MOS晶体管之间的短路，并且半导体器件具有高的电可靠性。

公开(公告)号：US08841541B2

公开(公告)日：2014-09-23

申请号：US13394023

申请日：2009-09-04

申请人： Takumi Nakahata ,  Kazunori Inoue ,  Yusuke Yamagata

发明人： Takumi Nakahata ,  Kazunori Inoue ,  Yusuke Yamagata

IPC分类号： H01L31/0224 ,  H01L31/0232 ,  H01L31/18 ,  H01L27/142 ,  H01L31/0392 ,  H01L31/052

CPC分类号： H01L31/0527 ,  H01L31/022425 ,  H01L31/02245 ,  H01L31/0392 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/056 ,  Y02E10/52

摘要： In a solar battery including: a photoelectric conversion layer that converts light into electricity; and a reflecting electrode layer that is provided on an opposite side of a light incident side in the photoelectric conversion layer and reflects light passed through the photoelectric conversion layer to the photoelectric conversion layer side, to realize a reflecting electrode layer having excellent adhesion and thermal corrosion resistance, stable electrical characteristics and satisfactory light reflection characteristics and to obtain a solar battery having high reliability, excellent electrical characteristics and optical characteristics, the reflecting electrode layer includes, on the photoelectric conversion layer side, a metal layer containing silver as a main component and containing nitrogen.

摘要翻译： 一种太阳能电池，包括：将光转换成电的光电转换层; 以及反射电极层，其设置在光电转换层的光入射侧的相反侧，并将通过光电转换层的光反射到光电转换层侧，以实现具有优异的粘附性和热腐蚀性的反射电极层 电阻，稳定的电特性和良好的光反射特性，并且获得具有高可靠性，优异的电特性和光学特性的太阳能电池，反射电极层在光电转换层侧包括含有银作为主要成分的金属层和 含氮。