摘要:
An image display device according to the present invention comprises a back panel on which a plurality of pixels each having a thin film electron emitter are arranged two-dimensionally, a front panel disposed opposite the back panel on which phosphor layer is formed, and a sealing frame with which the back panel and the front panel are fixed mutually to seal the plurality of pixels and the phosphor layer in a space enclosed by the back panel, the front panel, and the sealing frame, and is characterized in that double-layered signal lines each electrically connected to a group of the plurality of pixels are formed on the back panel, each of the double-layered signal lines consists of a lower-level electrode made from a silver paste and an upper-level electrode covering at least a part of the lower-level electrode laminated in this order on the back panel. The lower-level electrode is shaped e.g. by coating a groove formed in a surface of the back panel with the silver paste, and a surface of the upper-level electrode is used e.g. for an electrode of the thin film electron emitter, also. According to the configuration, the present invention reduces wiring resistance of the signal lines each electrically connected to the thin film electron emitters as well as improves planarity of each tunneling junction of the thin film electron emitters to suppress dispersion of electron emission property thereof among the pixels.
摘要:
An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要:
An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要:
Inexpensive, unannealed glass is used as a substrate. The surface of a polycrystalline silicon film doped with boron (B) or phosphorus (P) is oxidized with ozone at a processing temperature of 500° C. or below to form a silicon oxide film of 4 to 20 nm thick on the surface of polycrystalline silicon. On account of this treatment, the level density at the interface between the gate-insulating layer and the channel layer can be made lower, and a thin-film transistor having less variations of characteristics can be formed on the unannealed glass substrate.
摘要:
Disclosed is an automatic analysis device including light detectors that detect scattered light, whereby highly reliable analysis results can be obtained by reduction of the effect of noise components. Highly reliable concentration analysis with little effect from noise components can be achieved by calculating the correlation between scattered light detected by a plurality of light detectors before calculating concentration, and by performing concentration analysis using scattered light with high correlation.
摘要:
An image display device in which each pixel has a thin-film electron source composed of a lower electrode (which is a signal wire), an electron accelerating layer (which is formed by anodizing the surface of said signal wire), and an upper electrode (which covers said electron accelerating layer and releases electrons), in which the anodized film constituting said electron accelerating layer contains hydrated alumina component and anhydrous alumina component such that their ratio in the side close to the upper electrode is greater than that in the side close to the lower electrode. This structure prevents said thin-film electron source from being deteriorated in diode characteristics by said electron accelerating layer, thereby enhancing the reliability of said image display device.
摘要:
The average film thickness of an amorphous silicon film formed on a substrate is measured. Then, the amorphous silicon film is irradiated with a laser beam to form a polysilicon film, and the grain size distribution of the polysilicon film is measured. An optimum value of energy density of laser beam irradiation is calculated on the basis of grain size values measured at two points A and B of the polysilicon film. Then, the average film thickness of an amorphous silicon film formed on a subsequent substrate is measured. A value of energy density of laser beam irradiation for the subsequent amorphous silicon film is calculated on the basis of the two average film thicknesses. Accordingly, a uniform polysilicon film of large grain sizes is formed on the whole surface of a large-size substrate to provide polysilicon TFTs in a large area.
摘要:
In order to allow critical flaws in an inspected item to be determined early during a production process, the present invention includes the following steps: a step of detecting defects in a production process for the inspected item and storing defect positions; a step of collecting detailed defect information and storing the detailed information in association with defect positions; a step of storing positions at which flaws were generated based on a final inspection of the inspected item; a step of comparing defect positions with positions at which flaws were generated; and a step of classifying and displaying detailed information based on the comparison results.
摘要:
An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要:
An automatic analyzer is capable of reducing the influence of scattered light having noise components to enhance the S/N ratio properties of a light reception signal. Data is obtained at a plurality of angles by a plurality of detectors and a signal obtained by one detector selected from among the detectors is selected as a reference signal. An approximation is applied by an approximation selection unit, and an approximation calculation unit calculates an approximation using the selected approximation. A degree of variability of the reference signal is determined and a data correction unit corrects the signal of the detector by dividing the signal of the detector by the degree of variability of the reference signal. A concentration calculation processing unit performs the concentration calculation by use of the corrected signal data, and a result output unit outputs the results on a display.