公开(公告)号：US09660092B2

公开(公告)日：2017-05-23

申请号：US13592942

申请日：2012-08-23

申请人： Masahiro Watanabe ,  Mitsuo Mashiyama ,  Takuya Handa ,  Kenichi Okazaki ,  Shunpei Yamazaki

发明人： Masahiro Watanabe ,  Mitsuo Mashiyama ,  Takuya Handa ,  Kenichi Okazaki ,  Shunpei Yamazaki

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/49

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/78696

摘要： Provided is a semiconductor device including an oxide semiconductor and having stable electrical characteristics. Specifically, a semiconductor device including an oxide semiconductor and including a gate insulating film with favorable characteristics is provided. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, and a source electrode and a drain electrode in contact with the oxide semiconductor film. The gate insulating film includes at least a silicon oxynitride film and an oxygen release type oxide film which is formed over the silicon oxynitride film. The oxide semiconductor film is formed on and in contact with the oxygen release type oxide film.

公开(公告)号：US07133956B2

公开(公告)日：2006-11-07

申请号：US10912530

申请日：2004-08-04

申请人： Takuya Handa ,  Fubito Igari ,  Akihiro Watanabe

发明人： Takuya Handa ,  Fubito Igari ,  Akihiro Watanabe

IPC分类号： G06F13/14 ,  G06F1/26 ,  H03K17/16

CPC分类号： G06F13/4045

摘要： The CPU of an electronic device generates a parameter for determining the amplitude of a serial data signal when it is output from an output device to a serial ATA bus. The parameter indicates a value that is needed to make the amplitude of the received serial data signal fall within a range, stipulated in serial ATA interface standards, when another electronic device receives the serial data signal. The parameter is generated in accordance with the cable length of the serial ATA bus designated by a cable length designation unit. The other electronic device is connected to the serial ATA bus.

摘要翻译： 当从输出装置输出到串行ATA总线时，电子装置的CPU产生用于确定串行数据信号的振幅的参数。 该参数表示当另一电子设备接收到串行数据信号时，使接收的串行数据信号的幅度落在串行ATA接口标准规定的范围内所需的值。 该参数根据由电缆长度指定单元指定的串行ATA总线的电缆长度生成。 另一个电子设备连接到串行ATA总线。

公开(公告)号：US09252279B2

公开(公告)日：2016-02-02

申请号：US13592870

申请日：2012-08-23

申请人： Masahiro Watanabe ,  Mitsuo Mashiyama ,  Takuya Handa ,  Kenichi Okazaki

发明人： Masahiro Watanabe ,  Mitsuo Mashiyama ,  Takuya Handa ,  Kenichi Okazaki

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/78606

摘要： To provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and has high reliability. To provide a method for manufacturing the semiconductor device. The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, an oxide semiconductor film formed over the gate insulating film, a source electrode and a drain electrode formed over the oxide semiconductor film, and a protective film. The protective film includes a metal oxide film, and the metal oxide film has a film density of higher than or equal to 3.2 g/cm3.

摘要翻译： 提供一种具有稳定的电特性并具有高可靠性的氧化物半导体的半导体装置。 提供制造半导体器件的方法。 半导体器件包括栅电极，形成在栅电极上的栅极绝缘膜，形成在栅极绝缘膜上的氧化物半导体膜，形成在氧化物半导体膜上的源电极和漏电极以及保护膜。 保护膜包括金属氧化物膜，并且金属氧化物膜具有高于或等于3.2g / cm 3的膜密度。

公开(公告)号：US20130048977A1

公开(公告)日：2013-02-28

申请号：US13592870

申请日：2012-08-23

申请人： Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Takuya HANDA ,  Kenichi OKAZAKI

发明人： Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Takuya HANDA ,  Kenichi OKAZAKI

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/78606

摘要： To provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and has high reliability. To provide a method for manufacturing the semiconductor device. The semiconductor device includes a gate electrode, a gate insulating film formed over the gate electrode, an oxide semiconductor film formed over the gate insulating film, a source electrode and a drain electrode formed over the oxide semiconductor film, and a protective film. The protective film includes a metal oxide film, and the metal oxide film has a film density of higher than or equal to 3.2 g/cm3.

摘要翻译： 提供一种具有稳定的电特性并具有高可靠性的氧化物半导体的半导体装置。 提供制造半导体器件的方法。 半导体器件包括栅电极，形成在栅电极上的栅极绝缘膜，形成在栅极绝缘膜上的氧化物半导体膜，形成在氧化物半导体膜上的源电极和漏电极以及保护膜。 保护膜包括金属氧化物膜，并且金属氧化物膜具有高于或等于3.2g / cm 3的膜密度。

公开(公告)号：US20050066203A1

公开(公告)日：2005-03-24

申请号：US10912530

申请日：2004-08-04

申请人： Takuya Handa ,  Fubito Igari ,  Akihiro Watanabe

发明人： Takuya Handa ,  Fubito Igari ,  Akihiro Watanabe

IPC分类号： G06F3/00 ,  G06F1/26 ,  G06F3/06 ,  G06F13/38 ,  G06F13/40 ,  G06F13/42

CPC分类号： G06F13/4045

摘要： The CPU of an electronic device generates a parameter for determining the amplitude of a serial data signal when it is output from an output device to a serial ATA bus. The parameter indicates a value that is needed to make the amplitude of the received serial data signal fall within a range, stipulated in serial ATA interface standards, when another electronic device receives the serial data signal. The parameter is generated in accordance with the cable length of the serial ATA bus designated by a cable length designation unit. The other electronic device is connected to the serial ATA bus.

摘要翻译： 当从输出装置输出到串行ATA总线时，电子装置的CPU产生用于确定串行数据信号的振幅的参数。 该参数表示当另一电子设备接收到串行数据信号时，使接收的串行数据信号的幅度落在串行ATA接口标准规定的范围内所需的值。 该参数根据由电缆长度指定单元指定的串行ATA总线的电缆长度生成。 另一个电子设备连接到串行ATA总线。

公开(公告)号：US20130048978A1

公开(公告)日：2013-02-28

申请号：US13592942

申请日：2012-08-23

申请人： Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Takuya HANDA ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

发明人： Masahiro WATANABE ,  Mitsuo MASHIYAMA ,  Takuya HANDA ,  Kenichi OKAZAKI ,  Shunpei YAMAZAKI

IPC分类号： H01L29/22

CPC分类号： H01L29/7869 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/78696

摘要： Provided is a semiconductor device including an oxide semiconductor and having stable electrical characteristics. Specifically, a semiconductor device including an oxide semiconductor and including a gate insulating film with favorable characteristics is provided. Further, a method for manufacturing the semiconductor device is provided. The semiconductor device includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, and a source electrode and a drain electrode in contact with the oxide semiconductor film. The gate insulating film includes at least a silicon oxynitride film and an oxygen release type oxide film which is formed over the silicon oxynitride film. The oxide semiconductor film is formed on and in contact with the oxygen release type oxide film.

摘要翻译： 提供了包括氧化物半导体并且具有稳定的电特性的半导体器件。 具体地，提供了包括氧化物半导体并且包括具有有利特性的栅极绝缘膜的半导体器件。 此外，提供了一种用于制造半导体器件的方法。 半导体器件包括栅电极，栅电极上的栅极绝缘膜，栅极绝缘膜上的氧化物半导体膜，以及与氧化物半导体膜接触的源电极和漏电极。 栅极绝缘膜至少包括形成在氧氮化硅膜上的氮氧化硅膜和氧释放型氧化物膜。 氧化物半导体膜与氧释放型氧化物膜形成并接触。