公开(公告)号：US5061985A

公开(公告)日：1991-10-29

申请号：US364463

申请日：1989-06-12

申请人： Hideo Meguro ,  Yoshiaki Yoshiura ,  Tatsuo Itagaki ,  Ken Uchida ,  Tsuneo Satoh ,  Seiichi Ichihara ,  Koichi Nagasawa

发明人： Hideo Meguro ,  Yoshiaki Yoshiura ,  Tatsuo Itagaki ,  Ken Uchida ,  Tsuneo Satoh ,  Seiichi Ichihara ,  Koichi Nagasawa

IPC分类号： H01L23/485 ,  H01L23/498 ,  H01L23/532

CPC分类号： H01L23/485 ,  H01L23/49855 ,  H01L23/53223 ,  H01L2924/0002

摘要： With the reduction in the size of semiconductor integrated circuit devices, there have been increases in the resistance at the contact portions of metal interconnections and in the incidence of contact failure. To solve these problems, the present invention provides a novel interconnection structure. Namely, a metal interconnection which has a barrier metal layer formed thereunder and which is also used to form electrode lead-out portions for external connection is arranged such that, among the following portions, that is, electrode portions of a plurality of elements fabricated on a semiconductor substrate in the form of an integrated circuit, interconnection portions between these elements, and the above-described electrode lead-out portions for external connection, those portions of the interconnection layer which are defined as the electrode portions of the elements and the interconnection portions are isolated from the semiconductor substrate by means of a barrier metal layer, while those portions of the interconnection layer which are defined as the electrode lead-out portions for external connection are formed not through the barrier metal layer but directly on the interlayer insulating layer.

摘要翻译： 随着半导体集成电路器件的尺寸的减小，金属互连接触部分的电阻和接触故障的发生率都有所增加。 为了解决这些问题，本发明提供了一种新的互连结构。 也就是说，在其下面形成有阻挡金属层并且也用于形成用于外部连接的电极引出部分的金属互连布置成使得在以下部分中，即在下列部分之中制造多个元件的电极部分 集成电路形式的半导体衬底，这些元件之间的互连部分和用于外部连接的上述电极引出部分，被定义为元件的电极部分的互连层的那些部分和互连 部分通过阻挡金属层与半导体基板隔离，而被定义为外部连接的电极引出部的互连层的那些部分不是通过阻挡金属层而是直接形成在层间绝缘层上 。

公开(公告)号：US5019891A

公开(公告)日：1991-05-28

申请号：US296003

申请日：1989-01-12

申请人： Jin Onuki ,  Yasushi Koubuchi ,  Shinichi Fukada ,  Katuhiko Shiota ,  Kunio Miyazaki ,  Tatsuo Itagaki ,  Genji Taki

发明人： Jin Onuki ,  Yasushi Koubuchi ,  Shinichi Fukada ,  Katuhiko Shiota ,  Kunio Miyazaki ,  Tatsuo Itagaki ,  Genji Taki

IPC分类号： H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L23/532

CPC分类号： H01L21/76886 ,  H01L21/28518 ,  H01L21/32136 ,  H01L21/76888 ,  H01L23/53219 ,  H01L23/53223 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/01047 ,  H01L2924/10253 ,  Y10T428/12528 ,  Y10T428/12611 ,  Y10T428/12625

摘要： A semiconductor device and the method of fabricating the semiconductor device include a semiconductor substrate and a plurality of conductor films formed on the substrate. Each of the conductor films is made of aluminum alloy including at least one element selected from palladium and platinum and, more preferably, further including at least one element selected from lithium, beryllium, magnesium, manganese, iron, cobalt, nickel, copper, lanthanum, cerium, chromium hafnium, zirconium, cadmium, titanium, tungsten, vanadium, tantalum, and niobium, with a protective film which includes oxide of the selected one of palladium and platinum being formed on the side wall of the conductor film.

公开(公告)号：US4999096A

公开(公告)日：1991-03-12

申请号：US213136

申请日：1988-06-29

申请人： Masayasu Nihei ,  Jin Onuki ,  Yasushi Koubuchi ,  Kunio Miyazaki ,  Tatsuo Itagaki

发明人： Masayasu Nihei ,  Jin Onuki ,  Yasushi Koubuchi ,  Kunio Miyazaki ,  Tatsuo Itagaki

IPC分类号： C23C14/06 ,  C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01L21/203 ,  H01L21/28 ,  H01L21/285 ,  H01L21/768

CPC分类号： C23C14/345 ,  C23C14/046 ,  C23C14/35 ,  C23C14/358 ,  H01J37/321 ,  H01J37/34 ,  H01J37/3444 ,  H01L21/76843

摘要： A thin film forming method and apparatus is provided, wherein a negative voltage is applied alternately to a target and a substrate to perform film formation and reverse sputter alternately. Further, a coil is mounted between the target and the substrate and a high frequency current is made to flow therethrough to generate plasma. A negative base voltage smaller in absolute value than that during sputter may be applied to the substrate to make a fraction of Ar ions to flow into the substrate while it is subjected to reverse sputter. Thus, a film whose step coverage is 0.3 or more is possible. It becomes also possible to hold stable discharge and reverse sputter at a high vacuum region. The pressure of an Ar atmosphere may be lowered to 10.sup.-3 Torr or less. A film whose peak value of x-ray diffraction strength in the (111) plane is 150 Xcps or more is possible. Also, a barrier layer with a layered structure of granular and columnar crystals or a mixed structure thereof and hence with an efficient barrier effect and a large specific resistance is possible.

公开(公告)号：US5175608A

公开(公告)日：1992-12-29

申请号：US574770

申请日：1990-08-30

申请人： Masayasu Nihei ,  Jin Onuki ,  Yasushi Koubuchi ,  Kunio Miyazaki ,  Tatsuo Itagaki

发明人： Masayasu Nihei ,  Jin Onuki ,  Yasushi Koubuchi ,  Kunio Miyazaki ,  Tatsuo Itagaki

IPC分类号： C23C14/04 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01L21/768

CPC分类号： C23C14/345 ,  C23C14/046 ,  C23C14/35 ,  C23C14/358 ,  H01J37/321 ,  H01J37/34 ,  H01J37/3444 ,  H01L21/76843 ,  Y10S257/915 ,  Y10T428/1234 ,  Y10T428/12528 ,  Y10T428/12639 ,  Y10T428/12674

摘要： A thin film forming method and apparatus, wherein a negative voltage is applied alternately to a target and a substrate to perform film formation and reverse sputter alternately. Further, a coil is mounted between the target and the substrate and a high frequency current is made to flow therethrough to generate plasma. A negative base voltage smaller in absolute value than that during sputter may be applied to the substrate to make Ar ions flow into the substrate while it is subjected to reverse sputter. Thus, a film whose step coverage is 0.3 or more is possible. It becomes also possible to maintain a stable discharge and perform reverse sputter in a high vacuum region. The pressure of an Ar atmosphere may be lowered to 10.sup.-3 Torr or less. An aluminum wiring film whose peak value of x-ray diffraction strength at a (111) plane is 150 Kcps or more is possible. Also, a barrier layer having a layered structure of granular and columnar crystals or a mixed structure thereof providing an efficient barrier effect and a large specific resistance is possible.

摘要翻译： 一种薄膜形成方法和装置，其中负电压交替地施加到靶和基底以进行成膜和交替地反向溅射。 此外，线圈安装在靶和衬底之间，并且使高频电流流过其中以产生等离子体。 绝对值小于溅射时的负基极电压可以施加到衬底上，以使Ar离子在进行反溅射的同时流入衬底。 因此，台阶覆盖度为0.3以上的电影是可能的。 也可以在高真空区域保持稳定的放电并进行反向溅射。 Ar气氛的压力可以降低到10-3乇或更低。 在（111）面的x射线衍射强度的峰值为150Kcps以上的铝配线膜是可能的。 此外，具有粒状和柱状晶体的层叠结构的阻挡层或其提供有效的屏障效应和大电阻率的混合结构是可能的。

公开(公告)号：US5051812A

公开(公告)日：1991-09-24

申请号：US551852

申请日：1990-07-12

申请人： Jin Onuki ,  Masayasu Nihei ,  Yasushi Koubuchi ,  Motoo Suwa ,  Shinichi Fukada ,  Katsuhiko Shiota ,  Kunio Miyazaki ,  Tatsuo Itagaki ,  Jun Sugiura

发明人： Jin Onuki ,  Masayasu Nihei ,  Yasushi Koubuchi ,  Motoo Suwa ,  Shinichi Fukada ,  Katsuhiko Shiota ,  Kunio Miyazaki ,  Tatsuo Itagaki ,  Jun Sugiura

IPC分类号： H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC分类号： H01L23/5226 ,  H01L23/53219 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265

摘要： A semiconductor device having a high reliability wiring conductor structure applicable to DRAMs and SRAMs.The semiconductor device of the present invention is characterized by comprising a first wiring conductor film wherein a specific resistance is 5.about.15.mu..OMEGA.cm and an allowable current density is 1.times.10.sup.6 .about.1.times.10.sup.8 A/cm.sup.2 ; a second wiring conductor film having a laminated layer structure formed of a layer of high fusing point and low resistance material and a layer of an Al based alloy; and a plug composed of a high fusing point and low resistance material, electrically connecting to the first wiring conductor film and the second wiring conductor film. Thus, a semiconductor device showing almost no increase in electrical resistance in a wiring conductor film due to electromigration even after subjecting to a large current is provided.

摘要翻译： 具有可应用于DRAM和SRAM的高可靠性布线导体结构的半导体器件。 本发明的半导体器件的特征在于包括第一布线导体膜，其中电阻率为5微米，欧姆厘米，容许电流密度为1×10 6差1×10 8 A / cm 2; 第二布线导体膜，具有由高熔点层和低电阻材料层以及Al基合金层形成的叠层结构; 以及由高熔点和低电阻材料组成的插头，电连接到第一布线导体膜和第二布线导体膜。 因此，提供了即使在经受大电流之后也由于电迁移而几乎不显示布线导体膜中的电阻增加的半导体器件。