公开(公告)号：US08699023B2

公开(公告)日：2014-04-15

申请号：US13822741

申请日：2011-09-14

申请人： Kenichi Ohtsuka ,  Tetsuhisa Nakano

发明人： Kenichi Ohtsuka ,  Tetsuhisa Nakano

IPC分类号： G01J3/28

CPC分类号： G01N21/55 ,  G01B11/0625 ,  G01B11/0658 ,  G01N21/31

摘要： A reflectivity measuring device 1 includes a measurement light source 30 that supplies irradiation light L1 to a measurement object, a spectroscopic detection unit 80 that detects, at multi-wavelength, intensity of the irradiation light L1 and intensity of reflected light L2 from the measurement object, a coefficient recording unit 92 that records a conversion coefficient K(λ) for converting a detected value of each wavelength's intensity of the irradiation light L1 into a value corresponding to a detected value of each wavelength's intensity of reflected light L2 from a reference measurement object, and a reflectivity calculation unit 93 that calculates each wavelength's reflectivity based on the value corresponding to the each wavelength's intensity of the reflected light L2 from the reference measurement object obtained from the detected value of the each wavelength's intensity of the irradiation light L1 and the conversion coefficient K(λ).

摘要翻译： 反射率测量装置1包括：将照射光L1提供给测量对象的测量光源30;分光检测单元80，其从多个波长检测照射光L1的强度和来自测量对象的反射光L2的强度 系数记录单元92，其记录用于将每个波长的照射光L1的强度的检测值转换成与来自参考测量对象的每个波长的反射光强度L2的检测值对应的值的转换系数K（λ） 以及反射率计算单元93，其根据从每个波长的照射光L1的强度的检测值获得的基准测量对象，基于与每个波长的反射光L2的强度对应的值来计算每个波长的反射率， 系数K（λ）。

公开(公告)号：US20120218561A1

公开(公告)日：2012-08-30

申请号：US13497722

申请日：2010-07-27

申请人： Kenichi Ohtsuka ,  Tetsuhisa Nakano ,  Motoyuki Watanabe

发明人： Kenichi Ohtsuka ,  Tetsuhisa Nakano ,  Motoyuki Watanabe

IPC分类号： G01B11/06

CPC分类号： G01B11/0625

摘要： A film thickness measurement apparatus 1A includes a measurement light source 28 which supplies measurement light containing wavelength components over a predetermined band to a semiconductor film 15, a spectroscopic optical system 30 and a photodetector 31 which detect intensities of output light formed by superimposing reflected light components from an upper surface and a lower surface of the semiconductor film 15 at each time point by wavelength, and a film thickness analysis section 40 which obtains a temporal change in film thickness d of the semiconductor film 15. The film thickness analysis section 40 obtains a value corresponding to a peak wavelength where the intensity of interfering light generated by the reflected light from the upper surface and the reflected light from the lower surface interfering with each other is maximized or minimized or an interval of the adjacent peak wavelengths based on spectral waveforms of the output light detected at mutually different time points T1, T2, and obtains a temporal change in film thickness d of the semiconductor film 15 from a temporal change in the value. Thus, a film thickness measurement apparatus and a film thickness measurement method are realized by which, even with such a minute amount of relative change in film thickness as to be less than one peak period of the interfering light intensity, the amount of change in film thickness can be accurately measured.

摘要翻译： 薄膜厚度测量装置1A包括测量光源28，该测量光源28将包含预定频带的波长分量的测量光提供给半导体薄膜15，分光光学系统30和光电检测器31，该光检测器31检测通过将反射光分量叠加形成的输出光的强度 在每个时间点由半导体膜15的上表面和下表面以及膜厚度分析部40获得半导体膜15的膜厚d的时间变化。膜厚度分析部40获得 对应于由上表面反射的光产生的干涉光的强度和来自下表面的反射光相互干扰的峰值波长的峰值波长最大化或最小化，或相邻峰值波长的间隔基于 在相互不同的时间波段检测出输出光 int T1，T2，并且从该值的时间变化中获得半导体膜15的膜厚度d的时间变化。 因此，通过薄膜厚度测量装置和膜厚测量方法，即使薄膜的相对变化量小于干涉光强度的一个峰值周期，薄膜的变化量 厚度可以精确测量。

公开(公告)号：US20110299097A1

公开(公告)日：2011-12-08

申请号：US13201976

申请日：2010-01-20

申请人： Kenichi Ohtsuka ,  Tetsuhisa Nakano ,  Motoyuki Watanabe

发明人： Kenichi Ohtsuka ,  Tetsuhisa Nakano ,  Motoyuki Watanabe

IPC分类号： G01B11/28

CPC分类号： G01B11/0633 ,  G01B11/0683

摘要： A film thickness measurement apparatus 1A includes a measurement light source 28 that supplies measurement light containing a measurement light component with a first wavelength λ1 and a measurement light component with a second wavelength λ2 to a measuring object 15, a spectroscopic optical system 30 that decomposes interfering light of reflected light from the upper surface and reflected light from the lower surface of the measuring object 15 into an interfering light component with the first wavelength λ1 and an interfering light component with the second wavelength λ2, photodetectors 31 and 32 that detect intensities of the first and second interfering light components at each time point, and a film thickness analysis section 40. The film thickness analysis section 40 obtains a temporal change in film thickness of the measuring object 15 based on a phase difference between a first phase in a temporal change in detected intensity of the first interfering light component and a second phase in a temporal change in detected intensity of the second interfering light component. Accordingly, a film thickness measurement apparatus and a film thickness measurement method by which a temporal change in film thickness of a film-shaped measuring object can be accurately measured are realized.

摘要翻译： 膜厚测量装置1A包括测量光源28，该测量光源28将包含第一波长λ1的测量光分量和具有第二波长λ2的测量光分量的测量光提供给测量对象15;分光光学系统30，其分解干涉 来自上表面的反射光和来自测量对象15的下表面的反射光成为具有第一波长λ1的干涉光分量和具有第二波长λ2的干涉光分量，光电探测器31和32检测强度 每个时间点的第一和第二干涉光分量以及膜厚度分析部分40.薄膜厚度分析部分40基于时间变化中的第一相位之间的相位差来获得测量对象15的膜厚度的时间变化 在第一干涉光分量的检测强度 在第二干涉光分量的检测强度的时间变化中相位相位。 因此，可以实现膜厚测量装置和薄膜厚度测量方法，通过该方法能够精确地测量薄膜状测量对象的膜厚度的时间变化。

公开(公告)号：US08885173B2

公开(公告)日：2014-11-11

申请号：US13497722

申请日：2010-07-27

申请人： Kenichi Ohtsuka ,  Tetsuhisa Nakano ,  Motoyuki Watanabe

发明人： Kenichi Ohtsuka ,  Tetsuhisa Nakano ,  Motoyuki Watanabe

IPC分类号： G01B11/02 ,  G01B11/06

CPC分类号： G01B11/0625

摘要： A film thickness measurement apparatus includes a measurement light source which supplies measurement light containing wavelength components over a predetermined band to a semiconductor film, a spectroscopic optical system and a photodetector which detect intensities of output light formed by superimposing reflected light components from an upper surface and a lower surface of the semiconductor film at each time point by wavelength, and a film thickness analysis section which obtains a temporal change in film thickness of the semiconductor film. The film thickness analysis section obtains a value corresponding to a peak wavelength where the intensity of interfering light generated by the reflected light from the upper surface and the reflected light from the lower surface interfering with each other is maximized or minimized or an interval of the adjacent peak wavelengths based on spectral waveforms of the output light detected at mutually different time points.

摘要翻译： 膜厚测量装置包括测量光源，该测量光源将包含预定波段的测量光提供给半导体膜，分光光学系统和光电检测器，其检测通过叠加来自上表面的反射光分量而形成的输出光的强度，以及 在每个时间点的每个时间点的半导体膜的下表面和获得半导体膜的膜厚的时间变化的膜厚度分析部。 薄膜厚度分析部分获得对应于峰值波长的值，其中由上表面反射的光产生的干涉光的强度和彼此干扰的来自下表面的反射光的强度最大化或最小化，或相邻的 基于在相互不同的时间点检测到的输出光的光谱波形的峰值波长。

公开(公告)号：US08649023B2

公开(公告)日：2014-02-11

申请号：US13201976

申请日：2010-01-20

申请人： Kenichi Ohtsuka ,  Tetsuhisa Nakano ,  Motoyuki Watanabe

发明人： Kenichi Ohtsuka ,  Tetsuhisa Nakano ,  Motoyuki Watanabe

IPC分类号： G01B11/02

CPC分类号： G01B11/0633 ,  G01B11/0683

摘要： A film thickness measurement apparatus includes a measurement light source that supplies measurement light containing a measurement light component with a first wavelength and a measurement light component with a second wavelength to a measuring object, a spectroscopic optical system that decomposes interfering light of reflected light from the upper surface and reflected light from the lower surface of the measuring object into an interfering light component with the first wavelength and an interfering light component with the second wavelength, photodetectors that detect intensities of the first and second interfering light components at each time point, and a film thickness analysis section that obtains a temporal change in film thickness of the measuring object based on a phase difference between a first phase in a temporal change in detected intensity of the first interfering light component and a second phase in a temporal change in detected intensity of the second interfering light component.

摘要翻译： 膜厚测量装置包括测量光源，该测量光源将包含具有第一波长的测量光分量和具有第二波长的测量光分量的测量光提供给测量对象;分光光学系统，其将来自所述第二波长的反射光的干涉光分解 上表面和从测量对象的下表面反射成具有第一波长的干涉光分量和具有第二波长的干涉光分量的反射光，检测在每个时间点的第一和第二干涉光分量的强度的光电检测器，以及 膜厚度分析部，其基于检测强度的时间变化中的第一干涉光分量的检测强度的时间变化的第一相位与第二相位之间的相位差，求出测量对象的膜厚度的时间变化 的第二干扰李 ght组件。

公开(公告)号：US20130169968A1

公开(公告)日：2013-07-04

申请号：US13822741

申请日：2011-09-14

申请人： Kenichi Ohtsuka ,  Tetsuhisa Nakano

发明人： Kenichi Ohtsuka ,  Tetsuhisa Nakano

IPC分类号： G01N21/55

CPC分类号： G01N21/55 ,  G01B11/0625 ,  G01B11/0658 ,  G01N21/31

摘要： A reflectivity measuring device 1 includes a measurement light source 30 that supplies irradiation light L1 to a measurement object, a spectroscopic detection unit 80 that detects, at multi-wavelength, intensity of the irradiation light L1 and intensity of reflected light L2 from the measurement object, a coefficient recording unit 92 that records a conversion coefficient K(λ) for converting a detected value of each wavelength's intensity of the irradiation light L1 into a value corresponding to a detected value of each wavelength's intensity of reflected light L2 from a reference measurement object, and a reflectivity calculation unit 93 that calculates each wavelength's reflectivity based on the value corresponding to the each wavelength's intensity of the reflected light L2 from the reference measurement object obtained from the detected value of the each wavelength's intensity of the irradiation light L1 and the conversion coefficient K(λ).

摘要翻译： 反射率测量装置1包括：将照射光L1提供给测量对象的测量光源30;分光检测单元80，其从多个波长检测照射光L1的强度和来自测量对象的反射光L2的强度 系数记录单元92，其记录用于将每个波长的照射光L1的强度的检测值转换成与来自参考测量对象的每个波长的反射光强度L2的检测值相对应的值的转换系数K（λ） 以及反射率计算单元93，其根据从每个波长的照射光L1的强度的检测值获得的基准测量对象，基于与每个波长的反射光L2的强度对应的值来计算每个波长的反射率， 系数K（λ）。