Laser-induced chemical vapor deposition of thin-film conductors
    1.
    发明授权
    Laser-induced chemical vapor deposition of thin-film conductors 失效
    激光诱导化学气相沉积的薄膜导体

    公开(公告)号:US5246745A

    公开(公告)日:1993-09-21

    申请号:US812686

    申请日:1991-12-23

    摘要: Control of the local environment during pulsed laser removal of thin film circuit metallurgy is used to change the nature of the top surfaces. Interconnecting such laser treated surfaces with LCVD films results in different growth morphologies, dependent on the nature of the surface created and the debris generated during the ablation process. Flowing helium across the surface during the ablation process results in improved growth morphologies for the same laser writing conditions. A low power laser scan is used to induce metal deposition on the substrate without surface damage. This is followed by several scans at an intermediate laser power to deposit the desired thickness of metal (e.g., about 8 .mu.m). Lastly, a high power laser scan is used, either at the points of intersection between the existing metallurgy and the metal repair or across the entire deposit area. Thermal spreading or blooming is reduced by modulating the intensity of the laser source.

    摘要翻译: 在薄膜电路冶金的脉冲激光去除期间对局部环境的控制被用于改变顶表面的性质。 将这种激光处理的表面与LCVD膜相互连接导致不同的生长形态,这取决于所产生的表面的性质和消融过程中产生的碎屑。 在消融过程中,流过氦气的表面会导致相同激光写入条件下的生长形态的改善。 使用低功率激光扫描来诱导基板上的金属沉积而没有表面损伤。 随后在中间激光功率下进行多次扫描以沉积所需厚度的金属(例如,约8μm)。 最后,使用大功率激光扫描,无论是在现有冶金和金属修复之间或整个沉积区域的交点处。 通过调制激光源的强度来降低散热或开花。