公开(公告)号：US08048330B2

公开(公告)日：2011-11-01

申请号：US12127921

申请日：2008-05-28

申请人： Ralf Richter ,  Thomas Foltyn ,  Anthony Mowry

发明人： Ralf Richter ,  Thomas Foltyn ,  Anthony Mowry

IPC分类号： B44C1/22 ,  H01L21/304

CPC分类号： H01L29/7843 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76819 ,  H01L21/76825 ,  H01L29/665 ,  H01L29/66772 ,  H01L29/78654

摘要： By providing an interlayer dielectric material with different removal rates, a desired minimum material height above gate electrode structures of sophisticated transistor devices of the 65 nm technology or 45 nm technology may be obtained. The reduced removal rate above the gate electrode may thus provide enhanced process robustness during the planarization of the interlayer dielectric layer stack prior to the formation of contact elements.

摘要翻译： 通过提供具有不同去除速率的层间电介质材料，可以获得在65nm技术或45nm技术的复杂晶体管器件的栅电极结构之上所需的最小材料高度。 因此，在形成接触元件之前，在层间电介质层叠层的平坦化期间，栅电极之上的减小的去除速率可以提供增强的工艺稳定性。

公开(公告)号：US20090108466A1

公开(公告)日：2009-04-30

申请号：US12103765

申请日：2008-04-16

申请人： Ralf Richter ,  Robert Seidel ,  Juergen Boemmels ,  Thomas Foltyn

发明人： Ralf Richter ,  Robert Seidel ,  Juergen Boemmels ,  Thomas Foltyn

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L21/7681 ,  H01L21/76811 ,  H01L21/76816

摘要： Interlayer connections, i.e., vertical connections, may be formed on the basis of a hard mask material, which may be positioned below, within or above an interlayer dielectric material, wherein one lateral dimension is defined by a trench mask, thereby obtaining a desired interlayer connection in a common patterning process. Furthermore, the thickness of at least certain portions of the metal lines may be adjusted with a high degree of flexibility, thereby providing the possibility of significantly reducing the overall resistivity of metal lines in metal levels, in which device performance may significantly depend on resistivity rather than parasitic capacitance.

摘要翻译： 中间层连接（即垂直连接）可以基于硬掩模材料形成，硬掩模材料可以位于层间电介质材料的内部或之上，其中一个横向尺寸由沟槽掩模限定，从而获得所需的中间层 连接在共同的图案化过程中。 此外，金属线的至少某些部分的厚度可以以高度的柔性来调节，从而提供了显着降低金属线中金属线的整体电阻率的可能性，其中器件性能可能显着地取决于电阻率 比寄生电容。

公开(公告)号：US20120220119A1

公开(公告)日：2012-08-30

申请号：US13468083

申请日：2012-05-10

申请人： Ralf Richter ,  Robert Seidel ,  Juergen Boemmels ,  Thomas Foltyn

发明人： Ralf Richter ,  Robert Seidel ,  Juergen Boemmels ,  Thomas Foltyn

IPC分类号： H01L21/768 ,  H01L21/308

CPC分类号： H01L21/7681 ,  H01L21/76811 ,  H01L21/76816

摘要： Interlayer connections, i.e., vertical connections, may be formed on the basis of a hard mask material, which may be positioned below, within or above an interlayer dielectric material, wherein one lateral dimension is defined by a trench mask, thereby obtaining a desired interlayer connection in a common patterning process. Furthermore, the thickness of at least certain portions of the metal lines may be adjusted with a high degree of flexibility, thereby providing the possibility of significantly reducing the overall resistivity of metal lines in metal levels, in which device performance may significantly depend on resistivity rather than parasitic capacitance.

摘要翻译： 中间层连接（即垂直连接）可以基于硬掩模材料形成，硬掩模材料可以位于层间电介质材料的内部或之上，其中一个横向尺寸由沟槽掩模限定，从而获得所需的中间层 连接在共同的图案化过程中。 此外，金属线的至少某些部分的厚度可以以高度的柔性来调节，从而提供了显着降低金属线中金属线的整体电阻率的可能性，其中器件性能可能显着地取决于电阻率 比寄生电容。

公开(公告)号：US20090170319A1

公开(公告)日：2009-07-02

申请号：US12127921

申请日：2008-05-28

申请人： Ralf Richter ,  Thomas Foltyn ,  Anthony Mowry

发明人： Ralf Richter ,  Thomas Foltyn ,  Anthony Mowry

IPC分类号： H01L21/304

CPC分类号： H01L29/7843 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801 ,  H01L21/76819 ,  H01L21/76825 ,  H01L29/665 ,  H01L29/66772 ,  H01L29/78654

摘要： By providing an interlayer dielectric material with different removal rates, a desired minimum material height above gate electrode structures of sophisticated transistor devices of the 65 nm technology or 45 nm technology may be obtained. The reduced removal rate above the gate electrode may thus provide enhanced process robustness during the planarization of the interlayer dielectric layer stack prior to the formation of contact elements.

摘要翻译： 通过提供具有不同去除速率的层间电介质材料，可以获得在65nm技术或45nm技术的复杂晶体管器件的栅电极结构之上所需的最小材料高度。 因此，在形成接触元件之前，在层间电介质层叠层的平坦化期间，栅电极之上的减小的去除速率可以提供增强的工艺稳定性。

公开(公告)号：US08741770B2

公开(公告)日：2014-06-03

申请号：US13468083

申请日：2012-05-10

申请人： Ralf Richter ,  Robert Seidel ,  Juergen Boemmels ,  Thomas Foltyn

发明人： Ralf Richter ,  Robert Seidel ,  Juergen Boemmels ,  Thomas Foltyn

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L21/7681 ,  H01L21/76811 ,  H01L21/76816

摘要： Interlayer connections, i.e., vertical connections, may be formed on the basis of a hard mask material, which may be positioned below, within or above an interlayer dielectric material, wherein one lateral dimension is defined by a trench mask, thereby obtaining a desired interlayer connection in a common patterning process. Furthermore, the thickness of at least certain portions of the metal lines may be adjusted with a high degree of flexibility, thereby providing the possibility of significantly reducing the overall resistivity of metal lines in metal levels, in which device performance may significantly depend on resistivity rather than parasitic capacitance.

摘要翻译： 中间层连接（即垂直连接）可以基于硬掩模材料形成，硬掩模材料可以位于层间电介质材料的内部或之上，其中一个横向尺寸由沟槽掩模限定，从而获得所需的中间层 连接在共同的图案化过程中。 此外，金属线的至少某些部分的厚度可以以高度的柔性来调节，从而提供了显着降低金属线中金属线的整体电阻率的可能性，其中器件性能可能显着地取决于电阻率 比寄生电容。

公开(公告)号：US20080132057A1

公开(公告)日：2008-06-05

申请号：US11757022

申请日：2007-06-01

申请人： Frank Feustel ,  Carsten Peters ,  Thomas Foltyn

发明人： Frank Feustel ,  Carsten Peters ,  Thomas Foltyn

IPC分类号： H01L21/4763

CPC分类号： H01L21/76844

摘要： By providing a surface modification process prior to or during a self-limiting deposition process, the per se highly conformal deposition behavior may be selectively changed so as to obtain reliable coverage at specific surface areas, while significantly reducing or suppressing a deposition above unwanted surface areas, such as the bottom of a via in advanced metallization structures of highly scaled semiconductor devices.

摘要翻译： 通过在自限制沉积工艺之前或期间提供表面改性方法，可以选择性地改变本身高共形沉积行为，以便在比表面积获得可靠的覆盖，同时显着地减少或抑制不想要的表面积 ，例如高分辨率半导体器件的先进金属化结构中的通孔的底部。

公开(公告)号：US08198190B2

公开(公告)日：2012-06-12

申请号：US12103765

申请日：2008-04-16

申请人： Ralf Richter ,  Robert Seidel ,  Juergen Boemmels ,  Thomas Foltyn

发明人： Ralf Richter ,  Robert Seidel ,  Juergen Boemmels ,  Thomas Foltyn

IPC分类号： H01L23/48 ,  H01L21/4763

CPC分类号： H01L21/7681 ,  H01L21/76811 ,  H01L21/76816

摘要： Interlayer connections, i.e., vertical connections, may be formed on the basis of a hard mask material, which may be positioned below, within or above an interlayer dielectric material, wherein one lateral dimension is defined by a trench mask, thereby obtaining a desired interlayer connection in a common patterning process. Furthermore, the thickness of at least certain portions of the metal lines may be adjusted with a high degree of flexibility, thereby providing the possibility of significantly reducing the overall resistivity of metal lines in metal levels, in which device performance may significantly depend on resistivity rather than parasitic capacitance.

摘要翻译： 中间层连接（即垂直连接）可以基于硬掩模材料形成，硬掩模材料可以位于层间电介质材料的内部或之上，其中一个横向尺寸由沟槽掩模限定，从而获得所需的中间层 连接在共同的图案化过程中。 此外，金属线的至少某些部分的厚度可以以高度的柔性来调节，从而提供了显着降低金属线中金属线的整体电阻率的可能性，其中器件性能可能显着地取决于电阻率 比寄生电容。

公开(公告)号：US08173538B2

公开(公告)日：2012-05-08

申请号：US11757022

申请日：2007-06-01

申请人： Frank Feustel ,  Carsten Peters ,  Thomas Foltyn

发明人： Frank Feustel ,  Carsten Peters ,  Thomas Foltyn

IPC分类号： H01L21/4763

CPC分类号： H01L21/76844

摘要： By providing a surface modification process prior to or during a self-limiting deposition process, the per se highly conformal deposition behavior may be selectively changed so as to obtain reliable coverage at specific surface areas, while significantly reducing or suppressing a deposition above unwanted surface areas, such as the bottom of a via in advanced metallization structures of highly scaled semiconductor devices.

摘要翻译： 通过在自限制沉积工艺之前或期间提供表面改性方法，可以选择性地改变本身高共形沉积行为，以便在比表面积获得可靠的覆盖，同时显着地减少或抑制不想要的表面积 ，例如高分辨率半导体器件的先进金属化结构中的通孔的底部。