Integrated silicon optical isolator
    1.
    发明授权
    Integrated silicon optical isolator 失效
    集成硅光隔离器

    公开(公告)号:US07605010B1

    公开(公告)日:2009-10-20

    申请号:US12122771

    申请日:2008-05-19

    CPC classification number: H01L27/15 H01L33/0012 H01L33/34

    Abstract: The present invention provides an optical isolator and a method of forming the optical isolator. Embodiments of the optical isolator include a silicon layer having at least one trench formed therein. The trench has a resistance that varies in response to electromagnetic radiation. Embodiments of the optical isolator also include at least one first diode formed in the silicon layer such that the trench encompasses the first diode. The first diode is configured to generate electromagnetic radiation in response to an applied signal. Embodiments of the optical isolator further include first and second regions formed in contact with the trench such that the resistance between the first and second contact regions varies in response to the electromagnetic radiation generated by the first diode.

    Abstract translation: 本发明提供一种光隔离器和形成光隔离器的方法。 光隔离器的实施例包括其中形成有至少一个沟槽的硅层。 沟槽具有响应于电磁辐射而变化的电阻。 光隔离器的实施例还包括形成在硅层中的至少一个第一二极管,使得沟槽包围第一二极管。 第一二极管被配置为响应于施加的信号产生电磁辐射。 光隔离器的实施例还包括形成为与沟槽接触的第一和第二区域,使得第一和第二接触区域之间的电阻响应于由第一二极管产生的电磁辐射而变化。

    Optically triggered electro-static discharge protection circuit
    2.
    发明授权
    Optically triggered electro-static discharge protection circuit 失效
    光电触发静电放电保护电路

    公开(公告)号:US07715162B2

    公开(公告)日:2010-05-11

    申请号:US12046683

    申请日:2008-03-12

    Abstract: The present invention provides a method and apparatus for providing electro-static discharge (ESD) protection between a first and a second circuit node. One embodiment of the ESD protection circuit includes one or more steering diodes that generate electromagnetic radiation and couple the first circuit node to ground in response to a voltage applied to the first circuit node. The ESD protection circuit also includes a latch circuit that couples the first circuit node to ground in response to the electromagnetic radiation generated by the steering diode(s).

    Abstract translation: 本发明提供一种用于在第一和第二电路节点之间提供静电放电(ESD)保护的方法和装置。 ESD保护电路的一个实施例包括响应于施加到第一电路节点的电压而产生电磁辐射并将第一电路节点耦合到地的一个或多个导向二极管。 ESD保护电路还包括锁存电路,其响应于由转向二极管产生的电磁辐射而将第一电路节点耦合到地。

    Method of forming a light activated silicon controlled switch
    3.
    发明授权
    Method of forming a light activated silicon controlled switch 有权
    形成光活化硅控制开关的方法

    公开(公告)号:US08012775B2

    公开(公告)日:2011-09-06

    申请号:US12882640

    申请日:2010-09-15

    CPC classification number: H01L27/144 H01L31/1113

    Abstract: The present invention provides a method of forming an optically triggered switch. Embodiments of the method include forming a silicon layer, forming one or more trenches in the silicon layer, and forming one or more silicon diodes in the silicon layer. Embodiments of the method also include forming a first thyristor in the silicon layer such that the first thyristor is physically and electrically isolated from the silicon diode(s) by the trench(es). The first thyristor is configured to turn on in response to electromagnetic radiation generated by the silicon diode(s).

    Abstract translation: 本发明提供一种形成光触发开关的方法。 该方法的实施例包括形成硅层,在硅层中形成一个或多个沟槽,以及在硅层中形成一个或多个硅二极管。 该方法的实施例还包括在硅层中形成第一晶闸管,使得第一晶闸管通过沟槽与硅二极体物理和电隔离。 第一晶闸管被配置为响应于硅二极管产生的电磁辐射而导通。

    Musical instrument preamplifier
    4.
    发明授权
    Musical instrument preamplifier 有权
    乐器前置放大器

    公开(公告)号:US08542848B1

    公开(公告)日:2013-09-24

    申请号:US12189190

    申请日:2008-08-10

    CPC classification number: G10H3/187

    Abstract: The present invention provides embodiments of a musical instrument preamplifier. It is especially suited to acoustic and electric guitars and basses. All components, including the power source, are contained within or on the body of the instrument. The preamplifier dubbed BPTD (for Battery Powered Tube Driver) contains a vacuum tube input stage and may utilize a second stage consisting of either a vacuum tube or semiconductor device, such as a JFET. Circuitry is included to bias the cathode heater and the preamplifier circuit with no dangerous high voltages present. The tube may be mounted on the instrument body to provide for a pleasing display.

    Abstract translation: 本发明提供乐器前置放大器的实施例。 它特别适用于声学和电吉他和低音。 所有组件,包括电源,都包含在仪器的主体内或其上。 称为BPTD(用于电池供电管驱动器)的前置放大器包含真空管输入级,并且可以利用由诸如JFET的真空管或半导体器件组成的第二级。 电路包括偏置阴极加热器和前置放大器电路,没有危险的高电压存在。 管可以安装在仪器主体上以提供令人愉快的显示。

    Light activated silicon controlled switch
    5.
    发明授权
    Light activated silicon controlled switch 有权
    光激活硅控开关

    公开(公告)号:US07821016B2

    公开(公告)日:2010-10-26

    申请号:US12061085

    申请日:2008-04-02

    CPC classification number: H01L27/144 H01L31/1113

    Abstract: The present invention provides an optically triggered switch and a method of forming the optically triggered switch. The optically triggered switch includes a silicon layer having at least one trench formed therein and at least one silicon diode formed in the silicon layer. The switch also includes a first thyristor formed in the silicon layer. The first thyristor is physically and electrically isolated from the silicon diode by the trench and the first thyristor is configured to turn on in response to electromagnetic radiation generated by the silicon diode.

    Abstract translation: 本发明提供一种光学触发开关和形成光学触发开关的方法。 光触发开关包括其中形成有至少一个沟槽的硅层和形成在硅层中的至少一个硅二极管。 开关还包括形成在硅层中的第一晶闸管。 第一晶闸管通过沟槽与硅二极管物理和电隔离,并且第一晶闸管被配置为响应于由硅二极管产生的电磁辐射而导通。

    METHODS OF FORMING A SHALLOW BASE REGION OF A BIPOLAR TRANSISTOR
    6.
    发明申请
    METHODS OF FORMING A SHALLOW BASE REGION OF A BIPOLAR TRANSISTOR 审中-公开
    形成双极晶体管的基底区域的方法

    公开(公告)号:US20090250785A1

    公开(公告)日:2009-10-08

    申请号:US12061231

    申请日:2008-04-02

    CPC classification number: H01L29/7317 H01L29/1004 H01L29/66265

    Abstract: The disclosed subject matter provides a method of forming a bipolar transistor. The method includes depositing a first insulating layer over a first layer of material that is doped with a dopant of a first type. The first layer is formed over a substrate. The method also includes modifying a thickness of the first oxide layer based on a target dopant profile and implanting a dopant of the first type in the first layer. The dopant is implanted at an energy selected based on the modified thickness of the first insulating layer and the target dopant profile.

    Abstract translation: 所公开的主题提供了形成双极晶体管的方法。 该方法包括在掺杂有第一类型的掺杂剂的第一材料层上沉积第一绝缘层。 第一层形成在衬底上。 该方法还包括基于目标掺杂物分布修改第一氧化物层的厚度并将第一类型的掺杂剂注入第一层。 掺杂剂以基于第一绝缘层的修饰厚度和目标掺杂剂分布选择的能量注入。

    OPTICALLY TRIGGERED ELECTRO-STATIC DISCHARGE PROTECTION CIRCUIT
    7.
    发明申请
    OPTICALLY TRIGGERED ELECTRO-STATIC DISCHARGE PROTECTION CIRCUIT 失效
    光触发式电子放电保护电路

    公开(公告)号:US20090230476A1

    公开(公告)日:2009-09-17

    申请号:US12046683

    申请日:2008-03-12

    Abstract: The present invention provides a method and apparatus for providing electrostatic discharge (ESD) protection between a first and a second circuit node. One embodiment of the ESD protection circuit includes one or more steering diodes that generate electromagnetic radiation and couple the first circuit node to ground in response to a voltage applied to the first circuit node. The ESD protection circuit also includes a latch circuit that couples the first circuit node to ground in response to the electromagnetic radiation generated by the steering diode(s).

    Abstract translation: 本发明提供一种用于在第一和第二电路节点之间提供静电放电(ESD)保护的方法和装置。 ESD保护电路的一个实施例包括响应于施加到第一电路节点的电压而产生电磁辐射并将第一电路节点耦合到地的一个或多个导向二极管。 ESD保护电路还包括锁存电路,其响应于由转向二极管产生的电磁辐射而将第一电路节点耦合到地。

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