利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

8 条记录 (耗时 0.013 秒)

    Semiconductor substrate support assembly having lobed o-rings therein
    1.
    发明授权
    Semiconductor substrate support assembly having lobed o-rings therein 失效
    半导体衬底支撑组件在其中具有凸起的O形环

    公开(公告)号：US06776875B2

    公开(公告)日：2004-08-17

    申请号：US09797217

    申请日：2001-02-28

    申请人： Rudolf Gujer ,  Thomas K. Cho ,  Tetsuya Ishikawa

    发明人： Rudolf Gujer ,  Thomas K. Cho ,  Tetsuya Ishikawa

    IPC分类号： C23F100

    CPC分类号： C23C16/4409 ,  C23C16/4412 ,  C23C16/45561 ,  C23C16/4586

    摘要： A semiconductor wafer processing substrate support assembly, comprises a substrate support platform having a centrally disposed recess, coupled to a base disposed above the centrally disposed recess, a plate disposed above the base, and a substrate support disposed above the plate. The substrate support assembly further comprises a plurality of o-rings having a plurality of lobes, wherein a first lobed o-ring of the plurality of lobed o-rings is disposed between the support platform and the base, a second lobed o-ring is disposed between the base and the plate, and a third lobed o-ring is disposed between the plate and the substrate support. Moreover, the plurality of lobed o-rings are utilized in the support assembly for reducing the number of o-rings required in the support assembly.

    摘要翻译： 半导体晶片处理基板支撑组件包括具有中心设置的凹部的基板支撑平台，其联接到设置在中心设置的凹部上方的基座，设置在基座上方的板和设置在板上方的基板支撑。 所述基板支撑组件还包括多个具有多个凸角的O形环，其中所述多个凸起的O形环的第一凸起的O形环设置在所述支撑平台和所述基座之间，第二凸起的O形环是 设置在基座和板之间，并且第三叶片O形环设置在板和基板支撑件之间。 此外，在支撑组件中使用多个凸起的O形环以减少支撑组件中所需的O形圈的数量。

    Pedestal with a thermally controlled platen
    2.
    发明授权
    Pedestal with a thermally controlled platen 有权
    带有热控压板的基座

    公开(公告)号：US06214121B1

    公开(公告)日：2001-04-10

    申请号：US09349412

    申请日：1999-07-07

    申请人： Thomas K. Cho ,  Tetsuya Ishikawa

    发明人： Thomas K. Cho ,  Tetsuya Ishikawa

    IPC分类号： C23C1600

    CPC分类号： H01L21/67109 ,  C23C16/4586 ,  C23C16/46 ,  Y10S156/915

    摘要： A semiconductor wafer processing apparatus, and more specifically, an apparatus containing a pedestal assembly having a thermally controlled platen for providing a controllable, uniform temperature distribution across the diameter of a semiconductor wafer. The thermally controlled platen heats and cools the semiconductor wafer placed upon the platen so the workpiece may be maintained uniformly at a predetermined temperature.

    摘要翻译： 更具体而言，是一种包含具有热控压板的基座组件的装置，用于在半导体晶片的直径上提供可控的均匀的温度分布。 热控压板加热并冷却放置在压板上的半导体晶片，使得工件可以均匀地保持在预定温度。

    Apparatus for cleaning a semiconductor process chamber
    6.
    发明授权
    Apparatus for cleaning a semiconductor process chamber 有权
    用于清洁半导体处理室的装置

    公开(公告)号：US06363624B1

    公开(公告)日：2002-04-02

    申请号：US09721060

    申请日：2000-11-21

    申请人： Lily L. Pang ,  Thomas K. Cho ,  Tetsuya Ishikawa

    发明人： Lily L. Pang ,  Thomas K. Cho ,  Tetsuya Ishikawa

    IPC分类号： F26B1900

    CPC分类号： F16L37/02 ,  C23C16/455

    摘要： An apparatus for distributing a cleaning gas to a semiconductor substrate processing chamber. The apparatus comprises a feed block disposed on top of the processing chamber and a support block disposed over the feed block. The feed block and the support block slidably interfit and are axially moveable with respect to one another.

    摘要翻译： 一种用于将清洁气体分配到半导体衬底处理室的设备。 该设备包括设置在处理室顶部的进料块和设置在进料块上的支撑块。 进给块和支撑块可滑动地相互配合并且可相对于彼此轴向移动。

    HIGH PRODUCTIVITY PLASMA PROCESSING CHAMBER
    7.
    发明申请
    HIGH PRODUCTIVITY PLASMA PROCESSING CHAMBER 审中-公开
    高生产力等离子体加工室

    公开(公告)号：US20090068356A1

    公开(公告)日：2009-03-12

    申请号：US12255884

    申请日：2008-10-22

    申请人： MARIO David SILVETTI ,  David H. Quach ,  Bok Hoen Kim ,  Thomas Nowak ,  Thomas K. Cho ,  Fred H. Hariz ,  Robert B. Moore

    发明人： MARIO David SILVETTI ,  David H. Quach ,  Bok Hoen Kim ,  Thomas Nowak ,  Thomas K. Cho ,  Fred H. Hariz ,  Robert B. Moore

    IPC分类号： C23C16/00 ,  H01L21/3065

    CPC分类号： C23C16/4404 ,  C23C16/4586 ,  H01J37/32522 ,  H01J2237/022

    摘要： Embodiments of the present invention are generally directed to apparatus and methods for a plasma-processing chamber requiring less maintenance and downtime and possessing improved reliability over the prior art. In one embodiment, the apparatus includes a substrate support resting on a ceramic shaft, an inner shaft allowing for electrical connections to the substrate support at atmospheric pressure, an aluminum substrate support resting on but not fixed to a ceramic support structure, sapphire rest points swaged into the substrate support, and a heating element inside the substrate support arranged in an Archimedes spiral to reduce warping of the substrate support and to increase its lifetime. Methods include increasing time between in-situ cleans of the chamber by reducing particle generation from chamber surfaces. Reduced particle generation occurs via temperature control of chamber components and pressurization of non-processing regions of the chamber relative to the processing region with a purge gas.

    摘要翻译： 本发明的实施例一般涉及等离子体处理室的装置和方法，其需要较少的维护和停机时间，并且比现有技术具有更高的可靠性。 在一个实施例中，该设备包括搁置在陶瓷轴上的基板支撑件，允许在大气压下与基板支撑件电连接的内轴，支撑在陶瓷支撑结构上但不固定到陶瓷支撑结构的铝基板支撑件，模锻的蓝宝石支架 衬底支撑件内部的加热元件和布置在阿基米德螺旋中的衬底支撑件内的加热元件，以减少衬底支撑件的翘曲并增加其寿命。 方法包括通过减少从室表面产生颗粒来增加室内原位清洗之间的时间。 通过腔室部件的温度控制和腔室相对于处理区域的吹扫气体的非处理区域的加压而发生减少的颗粒产生。

    Pedestal with a thermally controlled platen
    8.
    发明授权
    Pedestal with a thermally controlled platen 有权
    带有热控压板的基座

    公开(公告)号：US06656286B2

    公开(公告)日：2003-12-02

    申请号：US09776002

    申请日：2001-02-02

    申请人： Thomas K. Cho ,  Tetsuya Ishikawa

    发明人： Thomas K. Cho ,  Tetsuya Ishikawa

    IPC分类号： H01L2100

    CPC分类号： H01L21/67109 ,  C23C16/4586 ,  C23C16/46 ,  Y10S156/915

    摘要： A workpiece support having dichotomy of thermal paths therethrough is provided for controlling the temperature of a workpiece support thereon. In one embodiment, a workpiece support includes a platen body having a plug centrally disposed in a workpiece support surface of the platen body. A lower surface of the plug defines a void between the plug and a bottom of the bore. The void creates a dichotomy of thermal paths through the platen body thus controlling the temperature of a wafer support surface. Alternatively, the plug and platen body may be fabricated from materials having different rates of thermal conductivity to created the dichotomy of thermal paths in addition to or in absence of the void.

    摘要翻译： 提供具有通过其的热通路二分法的工件支撑件，用于控制其上的工件支撑件的温度。 在一个实施例中，工件支撑件包括具有中心地设置在压板主体的工件支撑表面中的插头的压板本体。 插塞的下表面限定了插头和孔的底部之间的空隙。 空隙产生通过压板体的热路径的二分法，从而控制晶片支撑表面的温度。 或者，插头和压盘体可以由具有不同传热率的材料制成，以产生除了空隙之外还是在空隙之外的热路径的二分法。