公开(公告)号：US20140193945A1

公开(公告)日：2014-07-10

申请号：US13731728

申请日：2012-12-31

申请人： Yuanyuan Li ,  Kaige Sun ,  Thomas N. Jackson

发明人： Yuanyuan Li ,  Kaige Sun ,  Thomas N. Jackson

IPC分类号： H01L21/465 ,  H01L21/463

CPC分类号： H01L21/465 ,  H01L21/31111 ,  H01L21/463 ,  H01L21/67069 ,  H01L21/6708 ,  H01L21/6776 ,  H01L29/7869

摘要： Disclosed herein is an aqueous alkaline etching solution comprising water and an alkaline material being selected from the group consisting of ammonium hydroxide, ammonium phosphate, ammonium carbonate, quaternary ammonium hydroxide, quaternary ammonium phosphate, quaternary ammonium carbonate, an alkali metal hydroxide, an alkaline earth metal hydroxide, or a combination comprising at least one of the foregoing alkaline materials; the aqueous alkaline solution being operative to etch aluminum oxide at a rate greater than or equal to about 2:1 over a rate at which it etches a metal oxide semiconductor to be protected; wherein the aqueous etching solution has a pH of 8 to 13.

摘要翻译： 本文公开了一种水性碱性蚀刻溶液，其包含水和碱性材料，其选自氢氧化铵，磷酸铵，碳酸铵，季铵氢氧化物，季铵磷酸盐，碳酸季铵，碱金属氢氧化物，碱土金属 金属氢氧化物或包含至少一种上述碱性物质的组合; 所述碱性水溶液以蚀刻要保护的金属氧化物半导体的速率在大于或等于约2:1的速率下蚀刻氧化铝; 其中所述水性蚀刻溶液的pH为8〜13。

公开(公告)号：US08197914B2

公开(公告)日：2012-06-12

申请号：US11284193

申请日：2005-11-21

申请人： Diwakar Garg ,  Philip Bruce Henderson ,  Daniel Joseph Tempel ,  Thomas N. Jackson ,  Jie Sun

发明人： Diwakar Garg ,  Philip Bruce Henderson ,  Daniel Joseph Tempel ,  Thomas N. Jackson ,  Jie Sun

IPC分类号： H05H1/24

CPC分类号： C03C17/245 ,  C03C2217/216 ,  C03C2217/24 ,  C03C2217/241 ,  C03C2218/153 ,  C23C16/407

摘要： The present invention discloses plasma enhanced chemical vapor deposition (PECVD) process for depositing n-type and p-type zinc oxide-based transparent conducting oxides (TCOs) at low temperatures with excellent optical and electrical properties on glass and temperature sensitive materials such as plastics and polymers. Specifically, it discloses PECVD process for depositing n-type ZnO by doping it with B or F and p-type ZnO by doping it with nitrogen excellent optical and electrical properties on glass and temperature sensitive materials such as plastics and polymers for TCO application. The process utilizes a mixture of volatile zinc compound, argon and/or helium as a diluent gas, carbon dioxide as an oxidant, and a dopant or reactant to deposit the desired ZnO-based TCOs.

摘要翻译： 本发明公开了一种用于在低温下沉积n型和p型氧化锌基透明导电氧化物（TCO）的等离子体增强化学气相沉积（PECVD）工艺，在玻璃和温度敏感材料如塑料上具有优异的光学和电学性能 和聚合物。 具体地说，它公开了用于通过用B或F和p型ZnO掺杂以将氮掺杂在玻璃上的优异的光学和电学性质以及用于TCO应用的诸如塑料和聚合物的温度敏感材料来沉积n型ZnO的PECVD工艺。 该方法利用挥发性锌化合物，氩和/或氦气作为稀释气体，二氧化碳作为氧化剂和掺杂剂或反应物的混合物以沉积所需的ZnO基TCO。

公开(公告)号：US06885345B2

公开(公告)日：2005-04-26

申请号：US10712666

申请日：2003-11-13

申请人： Thomas N. Jackson

发明人： Thomas N. Jackson

IPC分类号： H01Q3/40 ,  H01Q21/00 ,  H01Q21/06 ,  H01Q1/38

CPC分类号： H01Q3/40 ,  H01Q21/00 ,  H01Q21/061

摘要： Passive or active pixelized antenna structures are described in which the radio-frequency (RF) tuning of individual antenna pixel elements, the connections of individual antenna pixel elements to other antenna elements, and optionally the local phase of individual elements or groups of elements, is varied and controlled using tunable elements. Efficient and low-cost control of a large number of tunable elements is provided by matrix addressing techniques.

摘要翻译： 描述了被动或主动的像素化天线结构，其中单个天线像素元件的射频（RF）调谐，各个天线像素元件与其他天线元件的连接以及可选地各个元件或元件组的局部相位是 使用可调谐元件进行变化和控制。 通过矩阵寻址技术提供了大量可调元件的高效和低成本的控制。

公开(公告)号：US4638342A

公开(公告)日：1987-01-20

申请号：US419381

申请日：1982-09-17

申请人： John L. Freeouf ,  Thomas N. Jackson ,  Steven E. Laux ,  Jerry M. Woodall

发明人： John L. Freeouf ,  Thomas N. Jackson ,  Steven E. Laux ,  Jerry M. Woodall

IPC分类号： H01L29/80 ,  H01L21/338 ,  H01L29/772 ,  H01L29/812 ,  H01L29/56

CPC分类号： H01L29/8122 ,  H01L29/7722

摘要： An electrical device which employs two-dimensional space charge modulation in a semiconductor structure. The device has an approximately Debye length wide contact and a rectifying contact positioned adjacent to each other within a Debye length on a semiconductor body and a contact remotely positioned. A bias on the rectifying contact will effect conduction between the other contacts.

摘要翻译： 一种在半导体结构中采用二维空间电荷调制的电子装置。 该器件在半导体本体上的德拜长度和远程定位的触点之间具有大致德拜长度的宽触点和整流触点彼此相邻定位。 整流触点的偏压将影响其他触点之间的导通。

公开(公告)号：US4597825A

公开(公告)日：1986-07-01

申请号：US718987

申请日：1985-04-02

申请人： John L. Freeouf ,  Thomas N. Jackson ,  Peter Oelhafen ,  George D. Pettit ,  Jerry M. Woodall

发明人： John L. Freeouf ,  Thomas N. Jackson ,  Peter Oelhafen ,  George D. Pettit ,  Jerry M. Woodall

IPC分类号： H01L21/314 ,  H01L23/29 ,  H01L23/31 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06

CPC分类号： H01L23/3171 ,  H01L21/314 ,  H01L23/291 ,  H01L23/298 ,  H01L2924/0002

摘要： Crystalline compound semiconductors are passivated with a layer of the most volatile element thereof to prevent the formation of oxides that would interfere with further processing. A GaAs crystal is provided with a surface layer of arsenic. The arsenic layer is formed by exposure to light having a photon energy greater than 1.8 eV, at a power density of 0.01 to 0.5 watts per cm.sup.2 while the GaAs immersed in a 1:1 HCl:H.sub.2 O solution for a period of 10-30 minutes. The intermediate processing passivated GaAs crystal may be stored and handled in air and the As layer is removed by low temperature baking.

摘要翻译： 结晶化合物半导体被其最易挥发的元素层钝化以防止会妨碍进一步加工的氧化物的形成。 GaAs晶体设置有砷的表面层。 通过暴露于具有大于1.8eV的光子能量的光而形成砷层，功率密度为0.01至0.5瓦特/ cm2，而GaAs浸入1:1的HCl:H 2 O溶液中10-30分钟 。 中间处理钝化GaAs晶体可以在空气中储存和处理，并且通过低温烘烤除去As层。

公开(公告)号：US4518846A

公开(公告)日：1985-05-21

申请号：US619106

申请日：1984-06-11

申请人： John L. Freeouf ,  Thomas N. Jackson

发明人： John L. Freeouf ,  Thomas N. Jackson

IPC分类号： C30B23/08 ,  C23C14/24 ,  C23C14/26 ,  C23C14/56 ,  C30B23/06 ,  C30B25/08 ,  H01L21/203 ,  C23C13/12

CPC分类号： C30B23/066 ,  C23C14/243 ,  C23C14/56

摘要： In a molecular beam epitaxy furnace, a heater is described for heating the interior of an effusion cell. The heater includes an outer cylindrical sleeve having one end connected to receive a vacuum, and an opposite end extending into the furnace. An inner sleeve is provided coaxial with the outer cylindrical sleeve, one end of the inner sleeve being sealed with the opposite end of the cylindrical sleeve. The inner sleeve extends along a portion of the outer cylindrical sleeve providing an interior vacuum chamber. A heating element is disposed between the cylindrical sleeve and inner sleeve which heats the interior crucible receiving chamber and a crucible therein bearing semiconductor constituent material such that the semiconductor constituent material effuses without contamination from the heating element.

摘要翻译： 在分子束外延炉中，描述了用于加热渗出室内部的加热器。 加热器包括外圆柱形套筒，其一端连接以接收真空，另一端延伸到炉中。 内套筒与外圆柱套筒同轴设置，内套筒的一端用圆柱套筒的相对端密封。 内套筒沿着外圆柱形套筒的一部分延伸，提供内部真空室。 加热元件设置在圆筒套筒和内套筒之间，该内套筒将内坩埚接收室和其中的坩埚加热在轴承半导体构成材料中，使得半导体构成材料在不受加热元件污染的情况下流出。

公开(公告)号：US06720572B1

公开(公告)日：2004-04-13

申请号：US09602438

申请日：2000-06-23

申请人： Thomas N. Jackson ,  Hagen Klauk

发明人： Thomas N. Jackson ,  Hagen Klauk

IPC分类号： H01L3524

CPC分类号： H01L51/5296 ,  H01L51/0081 ,  H01L51/0545 ,  H01L51/5088

摘要： A light emitting device with improved carrier injection. The device has a layer of organic light emitting material and a layer of organic semiconductor material that are interposed between first and second contact layers. A carrier transport layer,may optionally be included between the semiconductor and light emitting layers. When used as a diode, the first and second contacts are functionally the anode and cathode. The device can also be a field effect transistor device by adding a gate contact and a gate dielectric. The first and second contacts then additionally have the function of source and drain, depending on whether the organic semiconductor material is a p-type or an n-type. Preferably, the organic semiconductor is formed with pentacene.

摘要翻译： 具有改进载流子注入的发光器件。 该器件具有介于第一和第二接触层之间的有机发光材料层和有机半导体材料层。 载体传输层可以可选地包括在半导体和发光层之间。 当用作二极管时，第一和第二触点在功能上是阳极和阴极。 该器件还可以通过添加栅极接触和栅极电介质来形成场效应晶体管器件。 根据有机半导体材料是p型还是n型，第一和第二触点另外具有源极和漏极的功能。 优选地，有机半导体与并五苯形成。

公开(公告)号：US06703300B2

公开(公告)日：2004-03-09

申请号：US10112088

申请日：2002-03-29

申请人： Thomas N. Jackson

发明人： Thomas N. Jackson

IPC分类号： H01L21265

CPC分类号： C23C14/225 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/32051 ,  Y10S438/936

摘要： There is a method for forming a multilayer electronic device. The method has the following steps: a) depositing a thin molecular layer on an electrically conductive substrate and b) depositing metal atoms or ions on the thin molecular layer at an angle of about 60 degrees or less with respect to the plane of the exposed surface of the thin molecular layer.

摘要翻译： 存在形成多层电子器件的方法。 该方法具有以下步骤：a）在导电基底上沉积薄分子层，和b）相对于暴露表面的平面以大约60度或更小的角度在薄分子层上沉积金属原子或离子 的薄分子层。

公开(公告)号：US06696370B2

公开(公告)日：2004-02-24

申请号：US09882360

申请日：2001-06-15

申请人： Thomas N. Jackson

发明人： Thomas N. Jackson

IPC分类号： H01L2131

CPC分类号： H01L51/0018 ,  H01L51/004 ,  H01L51/0052 ,  H01L51/0508 ,  H01L51/107

摘要： The present invention provides a process for preparing a patterned organic layer from an unpatterned water-soluble organic layer. The process includes the steps of: imagewise exposing to radiation a photosensitive unpatterned water-soluble organic layer deposited on an organic semiconducting material, a metal or an insulator layer, to produce an imagewise exposed organic layer having exposed and unexposed regions; and contacting the imagewise exposed organic layer and an aqueous-based developer to selectively remove the unexposed regions thereby producing the patterned organic layer. The present invention also provides an improved for fabricating an electronic device having a patterned organic layer adjacent to an organic semiconducting material, metal or insulator layer.

摘要翻译： 本发明提供了从未图案化的水溶性有机层制备图案化有机层的方法。 该方法包括以下步骤：将沉积在有机半导体材料，金属或绝缘体层上的光敏未图案化的水溶性有机层成像曝光到辐射，以产生具有暴露和未曝光区域的成像曝光的有机层; 并使图像曝光的有机层和水基显影剂接触以选择性地除去未曝光的区域，从而产生图案化的有机层。 本发明还提供了一种用于制造具有与有机半导体材料，金属或绝缘体层相邻的图案化有机层的电子器件的改进。

公开(公告)号：US06687987B2

公开(公告)日：2004-02-10

申请号：US09875443

申请日：2001-06-06

申请人： Theresa S. Mayer ,  Thomas N. Jackson ,  Christopher D. Nordquist

发明人： Theresa S. Mayer ,  Thomas N. Jackson ,  Christopher D. Nordquist

IPC分类号： H05K330

CPC分类号： H01L24/95 ,  B82Y30/00 ,  H01L25/50 ,  H01L2224/95085 ,  H01L2224/95122 ,  H01L2224/95145 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/09701 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/3025 ,  Y10T29/49004 ,  Y10T29/49117 ,  Y10T29/49128 ,  Y10T29/4913

摘要： An electro-fluidic assembly process for integration of an electronic device or component onto a substrate which comprises: disposing components within a carrier fluid; attracting the components to an alignment sites on the substrate by means of electrophoresis or dielectrophoresis; and aligning the components within the alignment site by means of energy minimization. The substrate comprises: a biased backplane layer, a metal plane layer having one or more alignment sites, a first insulating layer disposed between the backplane layer and the metal plane layer, and a second insulating layer, e.g., benzocyclobute, having a recess disposed therein, wherein the second insulating layer is on the surface of the metal plane layer opposite from the first insulating layer and wherein the recess is in communication with the alignment site.

摘要翻译： 一种用于将电子装置或部件集成到基板上的电流装配工艺，包括：将部件放置在载体流体内; 通过电泳或介电电泳将组分吸引到底物上的取向位点; 并通过能量最小化对齐对准位置内的组分。 衬底包括：偏置的背板层，具有一个或多个取向位置的金属平面层，设置在背板层和金属平面层之间的第一绝缘层，以及设置在其中的凹部的例如benzocyclobute的第二绝缘层， ，其中所述第二绝缘层在与所述第一绝缘层相反的所述金属平面层的表面上，并且所述凹部与所述对准部位连通。