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1.发明授权Method and apparatus for preventing rupture and contamination of an ultra-clean APCVD reactor during shutdown 失效用于在停机期间防止超清洁APCVD反应器破裂和污染的方法和装置
公开(公告)号：US5487783A
公开(公告)日：1996-01-30
申请号：US227752
申请日：1994-04-14
IPC分类号： C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/45561 , C23C16/4401 , C23C16/455
摘要： A method of maintaining an optimum pressure and purity level in a vessel having an inlet gas flow and an outlet gas flow during shutdown of the vessel that prevents imploding of the vessel when the inlet and outlet gas flows are discontinued. Gas from the vessel is directed to a containment portion in communication with the vessel. The pressure of the gas in the containment portion is monitored; the containment portion is backfilled with a purified inert gas when the monitored pressure drops to a predetermined lower level; and the containment portion is vented when the monitored pressure rises to a predetermined higher level. Apparatus for maintaining an optimum pressure and purity level in a vessel having an inlet gas flow and an outlet gas flow during shutdown of the vessel that prevents imploding of the vessel when the inlet and outlet gas flows are discontinued is also provided. The apparatus includes a containment portion adjacent to the vessel and in communication with the vessel for containing gas from the vessel, a back-pressure regulator and a conventional regulator for monitoring the pressure of the containment portion, a high-purity inert purge gas source in communication with the conventional regulator, adapted to backfill the containment portion with purified inert gas when the monitored pressure drops to a predetermined lower level, the back-pressure regulator adapted to vent the containment portion when the monitored pressure rises to a predetermined higher level.
摘要翻译： 在停机时，在容器关闭期间保持具有入口气流和出口气流的容器中的最佳压力和纯度水平的方法，其防止当入口气体和出口气体流过时容器内爆。 来自容器的气体被引导到与容器连通的容纳部分。 监测容纳部分中气体的压力; 当监测压力下降到预定的较低水平时，容纳部分用纯化的惰性气体回填; 并且当所监视的压力上升到预定的较高水平时，所述容纳部分被排出。 还提供了用于在容器停止期间具有入口气体流和出口气体流的容器中保持最佳压力和纯度水平的装置，其防止当入口和出口气体流动时中断容器的内泄。 该装置包括与容器相邻并与容器连通的容纳部分，用于容纳来自容器的气体，背压调节器和用于监测容纳部分的压力的常规调节器，高纯度惰性吹扫气体源 与常规调节器通信，适于当监测压力下降到预定的较低水平时用纯化的惰性气体回填容纳部分，背压调节器适于在监测的压力升高到预定的较高水平时排出容纳部分。
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公开(公告)号：US5227330A
公开(公告)日：1993-07-13
申请号：US785731
申请日：1991-10-31
IPC分类号： C30B25/02 , H01L21/205
CPC分类号： C30B29/06 , C30B25/02 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/02636
摘要： A system and method for growing low defect density epitaxial layers of Si on imperfectly cleaned Si surfaces by either selective or blanket deposition at low temperatures using the APCVD process wherein a first thin, e.g., 10 nm, layer of Si is grown on the surface from silane or disilane, followed by the growing of the remainder of the film from dichlorosilane (DCS) at the same low temperature, e.g., 550.degree. C. to 850.degree. C. The subsequent growth of the second layer with DCS over the first layer, especially if carried out immediately in the very same deposition system, will not introduce additional defects and may be coupled with high and controlled n-type doping which is not available in a silane-based system. Further, in order to achieve an optimal trade-off between the need for an inert ambience to promote silane reaction at low temperature and the need for a hydrogen ambience to prevent surface oxidation from inadvertant residual impurities, depositions are carried out in an ambience composed primarily of He but always containing some H.sub.2. Alternatively, instead of using He for H.sub.2 as the primary carrier gas when depositing Si from silane at low temperatures, DCS with a diborane additive may be used instead of silane in the normal hydrogen carrier. This modification permits DCS to be used in atmospheric pressure processes for Si deposition at low temperatures, which conventionally deposit Si selectively, to deposit blanket (non-selective) Si films over insulator and Si areas, and particularly such areas on a patterned wafer. Because the Si deposition rate is enhanced when diborane is added, significant non-selective deposition rates can occur down to 550.degree. C.
摘要翻译： 通过使用APCVD工艺在低温下通过选择性或覆盖沉积在不完全清洁的Si表面上生长Si的低缺陷密度外延层的系统和方法，其中在表面上生长第一薄例如10nm的Si层， 硅烷或乙硅烷，然后在相同的低温（例如550℃至850℃）下从二氯硅烷（DCS）中生长剩余的膜。随后在第一层上用DCS生长第二层， 特别是如果在相同的沉积系统中立即进行，则不会引入额外的缺陷，并且可能与在硅烷系统中不可用的高且受控的n型掺杂相结合。 此外，为了在惰性气氛促进低温下的硅烷反应的需要和氢气氛的需要之间实现最佳的权衡，以防止表面氧化从不经意的残留杂质，沉积在主要组成的环境中进行 他总是含有一些H2。 或者，代替在低温下从硅烷沉积Si时，He代替H 2作为主要载气，可以使用具有乙硼烷添加剂的DCS代替常规氢载体中的硅烷。 该修改允许DCS用于在低温下通常沉积Si的低温Si沉积的大气压力工艺中，以在绝缘体和Si区域上，特别是在图案化晶片上的这些区域上沉积覆盖层（非选择性）Si膜。 由于当加入乙硼烷时Si沉积速率增加，因此显着的非选择性沉积速率可能下降到550℃。
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3.发明授权Method and apparatus for preventing rupture and contamination of an ultra-clean APCVD reactor during shutdown 失效用于在停机期间防止超清洁APCVD反应器破裂和污染的方法和装置
公开(公告)号：US5635242A
公开(公告)日：1997-06-03
申请号：US459261
申请日：1995-06-02
IPC分类号： C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/45561 , C23C16/4401 , C23C16/455
摘要： A method of maintaining an optimum pressure and purity level in a vessel having an inlet gas flow and an outlet gas flow during shutdown of the vessel that prevents imploding of the vessel when the inlet and outlet gas flows are discontinued. Gas from the vessel is directed to a containment portion in communication with the vessel. The pressure of the gas in the containment portion is monitored; the containment portion is backfilled with a purified inert gas when the monitored pressure drops to a predetermined lower level; and the containment portion is vented when the monitored pressure rises to a predetermined higher level. Apparatus for maintaining an optimum pressure and purity level in a vessel having an inlet gas flow and an outlet gas flow during shutdown of the vessel that prevents imploding of the vessel when the inlet and outlet gas flows are discontinued is also provided. The apparatus includes a containment portion adjacent to the vessel and in communication with the vessel for containing gas from the vessel, a back-pressure regulator and a conventional regulator for monitoring the pressure of the containment portion, a high-purity inert purge gas source in communication with the conventional regulator, adapted to backfill the containment portion with purified inert gas when the monitored pressure drops to a predetermined lower level, the back-pressure regulator adapted to vent the containment portion when the monitored pressure rises to a predetermined higher level.
摘要翻译： 在停机时，在容器关闭期间保持具有入口气流和出口气流的容器中的最佳压力和纯度水平的方法，其防止当入口气体和出口气体流过时容器内爆。 来自容器的气体被引导到与容器连通的容纳部分。 监测容纳部分中气体的压力; 当监测压力下降到预定的较低水平时，容纳部分用纯化的惰性气体回填; 并且当所监视的压力上升到预定的较高水平时，所述容纳部分被排出。 还提供了用于在容器停止期间具有入口气体流和出口气体流的容器中保持最佳压力和纯度水平的装置，其防止当入口和出口气体流动时中断容器的内泄。 该装置包括与容器相邻并与容器连通的容纳部分，用于容纳来自容器的气体，背压调节器和用于监测容纳部分的压力的常规调节器，高纯度惰性吹扫气体源 与常规调节器通信，适于当监测压力下降到预定的较低水平时用纯化的惰性气体回填容纳部分，背压调节器适于在监测的压力升高到预定的较高水平时排出容纳部分。
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公开(公告)号：US4354198A
公开(公告)日：1982-10-12
申请号：US154700
申请日：1980-05-30
IPC分类号： H01L21/324 , H01L21/314 , H01L21/428 , H01L23/29 , H01L23/31 , H01L29/161
CPC分类号： H01L23/3171 , H01L21/428 , H01L23/291 , H01L2924/0002
摘要： The disclosure provides for the use of a group II-VI compound semiconductor as a surface passivator to control recombination of charge carriers at the surface of a group III-V compound semiconductor by a localized heating step. It is theorized for practice of the invention that the control of the recombination of the charge carriers is achieved by chemical reaction of the II-VI compound with excess group V element. In particular the disclosure provides for the use of a capping layer of laser annealed ZnS as a passivating layer on a GaAs device.
摘要翻译： 本公开提供了使用II-VI族化合物半导体作为表面钝化剂以通过局部加热步骤控制III-V族化合物半导体的表面上的载流子的重组。 对于本发明的实践，理论上可以通过II-VI化合物与过量的V族元素的化学反应来实现电荷载体的重组的控制。 具体地，本公开提供了在GaAs器件上使用激光退火的ZnS的覆盖层作为钝化层。
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公开(公告)号：US5378651A
公开(公告)日：1995-01-03
申请号：US56697
申请日：1993-04-30
IPC分类号： C30B25/02 , H01L21/205 , H01L21/203
CPC分类号： C30B29/06 , C30B25/02 , H01L21/02381 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/02636
摘要： A system and method for growing low defect density epitaxial layers of Si on imperfectly cleaned Si surfaces by either selective or blanket deposition at low temperatures using the APCVD process wherein a first thin, e.g., 10 nm, layer of Si is grown on the surface from silane or disilane, followed by the growing of the remainder of the film from dichlorosilane (DCS) at the same low temperature, e.g., 550.degree. C. to 850.degree. C. The subsequent growth of the second layer with DCS over the first layer, especially if carried out immediately in the very same deposition system, will not introduce additional defects and may be coupled with high and controlled n-type doping which is not available in a silane-based system. Further, in order to achieve an optimal trade-off between the need for an inert ambience to promote silane reaction at low temperature and the need for a hydrogen ambience to prevent surface oxidation from inadvertant residual impurities, depositions are carried out in an ambience composed primarily of He but always containing some H.sub.2. Also, the relative deposition rates on a patterned surface of polycrystalline Si on insulator areas and single crystal Si on single crystal seed areas, when using the reactant silane, are dependent on the temperature of deposition and the relative concentrations of hydrogen and inert gas, e.g., helium, in the ambient gas, and can be controlled by regulating these parameters.
摘要翻译： 通过使用APCVD工艺在低温下通过选择性或覆盖沉积在不完全清洁的Si表面上生长Si的低缺陷密度外延层的系统和方法，其中在表面上生长第一薄例如10nm的Si层， 硅烷或乙硅烷，然后在相同的低温（例如550℃至850℃）下从二氯硅烷（DCS）中生长剩余的膜。随后在第一层上用DCS生长第二层， 特别是如果在相同的沉积系统中立即进行，则不会引入额外的缺陷，并且可能与在硅烷系统中不可用的高且受控的n型掺杂相结合。 此外，为了在惰性气氛促进低温下的硅烷反应的需要和氢气氛的需要之间实现最佳的权衡，以防止表面氧化从不经意的残留杂质，沉积在主要组成的环境中进行 他总是含有一些H2。 此外，当使用反应物硅烷时，在单晶种子区域上的多晶Si绝缘体区域和单晶Si的图案化表面上的相对沉积速率取决于沉积温度和氢气和惰性气体的相对浓度，例如 ，氦气，在环境气体中，并且可以通过调节这些参数来控制。
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公开(公告)号：US4601779A
公开(公告)日：1986-07-22
申请号：US747746
申请日：1985-06-24
申请人： John R. Abernathey , Jerome B. Lasky , Larry A. Nesbit , Thomas O. Sedgwick , Scott; R. Stiffler
发明人： John R. Abernathey , Jerome B. Lasky , Larry A. Nesbit , Thomas O. Sedgwick , Scott; R. Stiffler
IPC分类号： H01L21/02 , H01L21/20 , H01L21/265 , H01L21/316 , H01L21/84 , H01L27/12 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/316 , H01L21/2007
摘要： A method of forming a thin silicon layer upon which semiconductor devices may be constructed. An epitaxial layer is grown on a silicon substrate, and oxygen or nitrogen ions are implanted into the epitaxial layer in order to form a buried etch-stop layer therein. An oxide layer is grown on the epitaxial layer, and is used to form a bond to a mechanical support wafer. The silicon substrate is removed using grinding and/or HNA, the upper portions of the epitaxy are removed using EDP, EPP or KOH, and the etch-stop is removed using a non-selective etch. The remaining portions of the epitaxy forms the thin silicon layer. Due to the uniformity of the implanted ions, the thin silicon layer has a very uniform thickness.
摘要翻译： 形成半导体器件的薄硅层的形成方法。 在硅衬底上生长外延层，并且将氧或氮离子注入到外延层中以在其中形成掩埋的蚀刻停止层。 在外延层上生长氧化物层，并且用于与机械支撑晶片形成结合。 使用研磨和/或HNA去除硅衬底，使用EDP，EPP或KOH除去外延的上部，并使用非选择性蚀刻去除蚀刻停止。 外延的剩余部分形成薄硅层。 由于注入离子的均匀性，薄硅层具有非常均匀的厚度。
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7.发明授权
公开(公告)号：US4211803A
公开(公告)日：1980-07-08
申请号：US947388
申请日：1978-09-29
摘要： A chemical vapor deposition (CVD) process is described for depositing magnetic oxides, such as garnets, having growth induced anisotropy sufficient to support stable bubble domains, even in very thin films. Organometallic source compounds are used together with low growth temperatures less than 900.degree. C. and high nozzle velocities in the range of 200-600 cm/sec. at room temperature. The oxidant gas mixture contains about 30-50 mol percent O.sub.2, rather than approximately 100 mol percent O.sub.2, as is usually used in CVD processes for depositing magnetic garnet films. The gas flow is transverse to the plane of the substrate onto which deposition is to occur, and is preferably perpendicular to the plane of the substrate. The individual source compounds are volatilized and carried by an inert gas, combined, then pre-mixed with oxygen in a nozzle without reaction at about 200.degree.-300.degree. C. The gas mixture is then passed at high velocity (200-600 cm/sec) onto a heated substrate. A novel nozzle-substrate arrangement is used which produces a favorable flow pattern and allows the source gas to be mixed with oxygen just immediately before it strikes the hot substrate. This yields optimum thickness and composition control for the particular substrate geometry used.
摘要翻译： 描述了一种化学气相沉积（CVD）工艺，用于沉积具有足以支撑稳定气泡畴的生长诱导各向异性的诸如石榴石的磁性氧化物，即使在非常薄的膜中。 有机金属源化合物一起使用低于900℃的低生长温度和200-600cm / sec范围内的高喷嘴速度。 在室温下。 氧化剂气体混合物含有大约30-50mol％的O 2，而不是大约100mol％的O 2，如通常用于沉积磁性石榴石膜的CVD工艺中那样。 气体流动横向于要沉积的衬底的平面，并且优选地垂直于衬底的平面。 单独的源化合物被惰性气体挥发并携带，合并，然后在喷嘴中与氧气预混合，在约200-300℃下无反应。然后将气体混合物以高速（200-600cm / sec）加热到加热的基底上。 使用新颖的喷嘴 - 衬底布置，其产生有利的流动图案，并且允许源气体刚刚在其撞击热衬底之前与氧气混合。 这为所使用的特定基底几何形状提供最佳厚度和组成控制。
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公开(公告)号：US3971860A
公开(公告)日：1976-07-27
申请号：US553184
申请日：1975-02-26
申请人： Alec N. Broers , Thomas O. Sedgwick
发明人： Alec N. Broers , Thomas O. Sedgwick
IPC分类号： B23K15/08 , G03F7/095 , H01L21/027 , H01L21/306 , H01L21/3205 , B05D3/06
CPC分类号： G03F7/0957 , B23K15/08 , H01L21/0277 , H01L21/30608 , H01L21/32051 , Y10S430/143
摘要： The disclosed method is one which provides an extremely thin substrate upon which there can be laid down a high resolution pattern of material such as metal by an electron beam fabrication technique. The latter technique is one wherein a resist is placed on the surface of the substrate. Thereafter, an electron beam is utilized to expose the resist in the desired pattern. The exposed resist is then removed and the metal or other material is laid down on the locations where the resist has been removed. With the use of the very thin substrate, the amount and effect of electron backscattering is substantially minimized whereby the consequent decrease of resolution due to exposure of the resist with the backscattered electrons is effectively eliminated. Accordingly, the resist exposure can be confined to much narrower widths than heretofore possible with known electron beam fabrication techniques.
摘要翻译： 所公开的方法是提供非常薄的衬底的方法，其上可以通过电子束制造技术放置诸如金属的材料的高分辨率图案。 后一种技术是其中抗蚀剂被放置在基底的表面上的技术。 此后，使用电子束以期望的图案曝光抗蚀剂。 然后去除暴露的抗蚀剂，并将金属或其它材料放置在已经除去抗蚀剂的位置。 通过使用非常薄的衬底，电子后向散射的量和效果基本上被最小化，从而有效地消除了由于具有反向散射电子的抗蚀剂暴露而导致的分辨率的降低。 因此，通过已知的电子束制造技术，抗蚀剂曝光可以被限制到比迄今为止更窄的宽度。
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