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    Methods of forming integrated circuit devices having damascene interconnects therein with metal diffusion barrier layers and devices formed thereby
    1.
    发明授权
    Methods of forming integrated circuit devices having damascene interconnects therein with metal diffusion barrier layers and devices formed thereby 有权
    形成具有金属扩散阻挡层和由此形成的器件的具有镶嵌互连的集成电路器件的方法

    公开(公告)号：US08232200B1

    公开(公告)日：2012-07-31

    申请号：US13051732

    申请日：2011-03-18

    Applicant: Hyeok-Sang Oh ,  Woo-Jin Jang ,  Bum-Ki Moon ,  Ji-Hong Choi ,  Minseok Oh ,  Tien-Jen Cheng

    Inventor： Hyeok-Sang Oh ,  Woo-Jin Jang ,  Bum-Ki Moon ,  Ji-Hong Choi ,  Minseok Oh ,  Tien-Jen Cheng

    IPC: H01L21/4763

    CPC classification number: H01L21/76844 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76885

    Abstract: Methods of forming integrated circuit devices include forming an interlayer insulating layer having a trench therein, on a substrate and forming an electrical interconnect (e.g., Cu damascene interconnect) in the trench. An upper surface of the interlayer insulating layer is recessed to expose sidewalls of the electrical interconnect. An electrically insulating first capping pattern is formed on the recessed upper surface of the interlayer insulating layer and on the exposed sidewalls of the electrical interconnect, but is removed from an upper surface of the electrical interconnect. A metal diffusion barrier layer is formed on an upper surface of the electrical interconnect, however, the first capping pattern is used to block formation of the metal diffusion barrier layer on the sidewalls of the electrical interconnect. This metal diffusion barrier layer may be formed using an electroless plating technique.

    Abstract translation: 形成集成电路器件的方法包括在衬底上形成其中具有沟槽的层间绝缘层，并在沟槽中形成电互连（例如Cu镶嵌互连）。 层间绝缘层的上表面被凹入以暴露电互连的侧壁。 电绝缘的第一覆盖图案形成在层间绝缘层的凹陷的上表面和电互连的暴露的侧壁上，但是从电互连的上表面去除。 在电互连的上表面上形成金属扩散阻挡层，然而，第一覆盖图案用于阻挡电互连的侧壁上的金属扩散阻挡层的形成。 该金属扩散阻挡层可以使用化学镀技术形成。

    Deposition Chamber Cleaning Method Including Stressed Cleaning Layer
    8.
    发明申请
    Deposition Chamber Cleaning Method Including Stressed Cleaning Layer 有权
    沉积室清洁方法包括压实清洁层

    公开(公告)号：US20120061234A1

    公开(公告)日：2012-03-15

    申请号：US12878128

    申请日：2010-09-09

    Applicant: Tien-Jen Cheng ,  Zhengwen Li ,  Keith Kwong Hon Wong

    Inventor： Tien-Jen Cheng ,  Zhengwen Li ,  Keith Kwong Hon Wong

    IPC: B08B7/04 ,  C23C14/34 ,  C23C16/00

    CPC classification number: B08B7/04 ,  B08B7/0014 ,  C23C14/34 ,  C23C16/4404

    Abstract: A method for cleaning a deposition chamber includes forming a deposited layer over an interior surface of the deposition chamber, wherein the deposited layer has a deposited layer stress and a deposited layer modulus; forming a cleaning layer over the deposited layer, wherein a material comprising the cleaning layer is selected such that the cleaning layer adheres to the deposited layer, and has a cleaning layer stress and a cleaning layer modulus, wherein the cleaning layer stress is higher than the deposited layer stress, and wherein the cleaning layer modulus is higher than the deposited layer modulus; and removing the deposited layer and the cleaning layer from the interior of the deposition chamber.

    Abstract translation: 清理沉积室的方法包括在沉积室的内表面上形成沉积层，其中沉积层具有沉积层应力和沉积层模量; 在所述沉积层上形成清洁层，其中选择包括所述清洁层的材料，使得所述清洁层粘附到所述沉积层，并且具有清洁层应力和清洁层模量，其中所述清洁层应力高于 沉积层应力，并且其中所述清洁层模量高于所述沉积层模量; 以及从沉积室的内部去除沉积层和清洁层。

    Conformal adhesion promoter liner for metal interconnects
    9.
    发明授权
    Conformal adhesion promoter liner for metal interconnects 失效
    用于金属互连的保形粘合促进剂衬垫

    公开(公告)号：US08105937B2

    公开(公告)日：2012-01-31

    申请号：US12190906

    申请日：2008-08-13

    Applicant: Tien-Jen Cheng ,  Zhengwen Li ,  Keith Kwong Hon Wong ,  Huilong Zhu

    Inventor： Tien-Jen Cheng ,  Zhengwen Li ,  Keith Kwong Hon Wong ,  Huilong Zhu

    IPC: H01L21/44

    CPC classification number: H01L23/53238 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76868 ,  H01L21/76877 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A dielectric layer is patterned with at least one line trough and/or at least one via cavity. A metallic nitride liner is formed on the surfaces of the patterned dielectric layer. A metal liner is formed on the surface of the metallic nitride liner. A conformal copper nitride layer is formed directly on the metal liner by atomic layer deposition (ALD) or chemical vapor deposition (CVD). A Cu seed layer is formed directly on the conformal copper nitride layer. The at least one line trough and/or the at least one via cavity are filled with an electroplated material. The direct contact between the conformal copper nitride layer and the Cu seed layer provides enhanced adhesion strength. The conformal copper nitride layer may be annealed to covert an exposed outer portion into a contiguous Cu layer, which may be employed to reduce the thickness of the Cu seed layer.

    Abstract translation: 用至少一个线槽和/或至少一个通孔腔对电介质层进行构图。 金属氮化物衬垫形成在图案化电介质层的表面上。 在金属氮化物衬垫的表面上形成金属衬垫。 通过原子层沉积（ALD）或化学气相沉积（CVD）直接在金属衬垫上形成共形的氮化铜层。 在适形的氮化铜层上直接形成Cu籽晶层。 至少一个线槽和/或至少一个通孔腔被电镀材料填充。 保形氮化铜层和Cu籽晶层之间的直接接触提供了增强的粘合强度。 可以将共形的氮化铜层退火以将暴露的外部部分翻转成连续的Cu层，其可用于减小Cu籽晶层的厚度。

    Method for Removing Copper Oxide Layer
    10.
    发明申请
    Method for Removing Copper Oxide Layer 失效
    去除氧化铜层的方法

    公开(公告)号：US20110183520A1

    公开(公告)日：2011-07-28

    申请号：US12695273

    申请日：2010-01-28

    Applicant: Tien-Jen Cheng ,  Stephan Grunow ,  Zhengwen Li ,  Huilong Zhu

    Inventor： Tien-Jen Cheng ,  Stephan Grunow ,  Zhengwen Li ,  Huilong Zhu

    IPC: H01L21/306

    CPC classification number: H01L21/02074 ,  C23G5/00

    Abstract: The invention is directed to a method for removing copper oxide from a copper surface to provide a clean copper surface, wherein the method involves exposing the copper surface containing copper oxide thereon to an anhydrous vapor containing a carboxylic acid compound therein, wherein the anhydrous vapor is generated from an anhydrous organic solution containing the carboxylic acid and one or more solvents selected from hydrocarbon and ether solvents.

    Abstract translation: 本发明涉及从铜表面去除氧化铜以提供清洁的铜表面的方法，其中所述方法包括将含有氧化铜的铜表面暴露于其中含有羧酸化合物的无水蒸气，其中无水蒸气为 由含有羧酸的无水有机溶液和选自烃和醚溶剂的一种或多种溶剂产生。

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