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公开(公告)号：US5501926A
公开(公告)日：1996-03-26
申请号：US383553
申请日：1995-01-31
申请人： John C. Cheng , Timothy M. Reith , James S. Wong
发明人： John C. Cheng , Timothy M. Reith , James S. Wong
IPC分类号： G03F1/00 , G11B7/26 , H01L21/302 , H01L21/3065 , G03F9/00
摘要： A method of manufacturing a photomask for the production of dual depth features on substrates, and the photomask so manufactured, wherein the method of manufacturing the photomask is comprised of the steps of: (1) coating a substrate which transmits at least two selected wavelengths with: a) an optical filter material which prevents the transmission of at least one of the wavelengths, b) an opaque masking material, and c) a dual tone photoresist; (2) using a single mastering tool to selectively expose areas of the coated substrate to one of the wavelengths; (3) developing the photoresist; (4) etching the exposed masking material and optical filter material; (5) exposing the remaining coated substrate; (6) developing the remaining photoresist; (7) etching the exposed surface; and (8) stripping away the remaining photoresist.
摘要翻译： 一种制造用于在衬底上生产双重深度特征的光掩模的方法以及如此制造的光掩模，其中制造光掩模的方法包括以下步骤：（1）将透射至少两个所选波长的衬底 ：a）防止透射至少一种波长的光学过滤材料，b）不透明掩模材料，和c）双色光致抗蚀剂; （2）使用单个母盘制作工具来选择性地将涂覆的基底的区域暴露于波长之一; （3）显影光致抗蚀剂; （4）蚀刻曝光的掩模材料和滤光材料; （5）暴露剩余的涂覆基材; （6）显影剩余的光致抗蚀剂; （7）蚀刻暴露的表面; 和（8）剥离剩余的光致抗蚀剂。
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公开(公告)号：US4752344A
公开(公告)日：1988-06-21
申请号：US942744
申请日：1986-12-22
申请人： Nancy J. Jubb , Timothy M. Reith
发明人： Nancy J. Jubb , Timothy M. Reith
IPC分类号： C22C38/00 , C22C19/03 , C23C14/06 , G11B5/31 , H01F10/14 , H01F41/18 , C22C38/08 , C23C14/14
摘要： An improved thin magnetic layer which is suitable for use in magnetic head pole piece applications and a method of manufacture therefor are disclosed. The magnetic layer is a single phase composition of NiFe and Al.sub.2 O.sub.3. The magnetic layer is manufactured by cosputtering from a single, two phase sputtering target, or from separate NiFe and Al.sub.2 O.sub.3 sputtering targets. The single phase composition results in increased abrasion resistance without degradation of the magnetic properties of the layer.
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公开(公告)号：US4135998A
公开(公告)日：1979-01-23
申请号：US900213
申请日：1978-04-26
IPC分类号： H01L21/302 , H01L21/285 , H01L21/3065 , H01L21/3213 , C23C15/00
CPC分类号： H01L21/32131 , H01L21/28537
摘要： Use of a rare gas in combination with oxygen or nitrogen to sputter etch unreacted platinum after formation of a platinum silicide contact structure for the formation of a Schottky Barrier diode in a silicon semiconductor substrate.
摘要翻译： Pt在PtSi上的溅射蚀刻速率的差异通过在稀有气体环境中溅射蚀刻Pt而增加。 > = 1 vol。 ％O2或N2，pref。 Ar contg 10卷 ％O2。 该方法结合在Si衬底中形成肖特基势垒电极，特别是通过（a）在Si衬底中形成有源电路元件，（b）用绝缘层涂覆表面，该绝缘层具有暴露Si的至少一个开口（ c）在绝缘体和开口中沉积铂层，（d）烧结，在开口中形成PtSi，和（e）如上所述溅射蚀刻未组合的Pt。 蚀刻速率差的增加导致Pt稀释比使用纯Ar更低。 污染较少，没有Cl和S污染。 -
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